arXiv subjects

M. S. Brandt

Publications and source records attributed to M. S. Brandt.

28 records · Page 2Linked to original sources

arXiv2008

Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature

The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic properties of these multifunctional hybrids are investigated at room temperature as a function of the voltage controlled stress exerted by the actuator on the Ni film. Ferromagnetic resonance spectroscopy shows that the magnetic easy axis in the Ni film plane is rotated by 90 degree upon changing the polarity of the voltage Vp applied to the actuator. In other words, the in-plane uniaxial magnetic anisotropy of the Ni film can be inverted via the application of an appropriate voltage Vp. Using SQUID magnetometry, the evolution of the magnetization vector is recorded as a function of Vp and of the external magnetic field. Changing Vp allows to reversibly adjust the magnetization orientation in the Ni film plane within a range of approximately 70 degree. All magnetometry data can be quantitatively understood in terms of the magnetic free energy determined from the ferromagnetic resonance experiments. These results demonstrate that magnetoelastic coupling in hybrid structures indeed is a viable option to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature.

cond-mat.mtrl-sci↗

arXiv2008

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

cond-mat.mtrl-sci↗

arXiv2008

Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.

cond-mat.mtrl-sci↗

arXiv2007

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of T_C=55K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d^5 configuration. These observations unambiguously proof that the ferromagnetism is carrier-mediated also in GaMnP.

cond-mat.mtrl-sci↗

arXiv2007

Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular- and the temperature-dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane uniaxial components are observed at low temperatures, which lift the degeneracy between the in-plane [011] and [01-1] directions as well as between the in-plane [010] and [001] directions. Near T=5K, the easy magnetization axis is close to the in-plane [01-1] direction. All anisotropy parameters decrease with increasing temperature and disappear above the Curie temperature T_C. A consistent picture of the magnetic anisotropy of ferromagnetic GaMnP emerges from the FMR and magnetometry data. The latter can be successfully modeled when both coherent magnetization rotation and magnetic domain nucleation are considered.

cond-mat.mtrl-sci↗

arXiv2006

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As

General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They are applied to strained (Ga,Mn)As films, grown on (001)- and (113)A-oriented GaAs substrates, where the resistivities are theoretically and experimentally studied for magnetic fields rotated within various planes parallel and perpendicular to the sample surface. We are able to model the measured angular dependences of the resistivities within the framework of a single ferromagnetic domain, calculating the field-dependent orientation of the magnetization by numerically minimizing the free-enthalpy density. Angle-dependent magnetotransport measurements are shown to be a powerful tool for probing both anisotropic magnetoresistance and magnetic anisotropy. The anisotropy parameters of the (Ga,Mn)As films inferred from the magnetotransport measurements agree with those obtained by ferromagnetic resonance measurements within a factor of two.

cond-mat.mtrl-sci↗

arXiv2006

Electrical detection of 31P spin quantum states

In recent years, a variety of solid-state qubits has been realized, including quantum dots, superconducting tunnel junctions and point defects. Due to its potential compatibility with existing microelectronics, the proposal by Kane based on phosphorus donors in Si has also been pursued intensively. A key issue of this concept is the readout of the P quantum state. While electrical measurements of magnetic resonance have been performed on single spins, the statistical nature of these experiments based on random telegraph noise measurements has impeded the readout of single spin states. In this letter, we demonstrate the measurement of the spin state of P donor electrons in silicon and the observation of Rabi flops by purely electric means, accomplished by coherent manipulation of spin-dependent charge carrier recombination between the P donor and paramagnetic localized states at the Si/SiO2 interface via pulsed electrically detected magnetic resonance. The electron spin information is shown to be coupled through the hyperfine interaction with the P nucleus, which demonstrates the feasibility of a recombination-based readout of nuclear spins.

quant-ph↗

arXiv2006

Spin-glass-like behavior of Ge:Mn

We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge_{0.96}Mn_{0.04}, ac susceptibility measurements show a peak around T_f, with the peak position T'_f shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta log f] ~ 0.06, whereas for sample Ge_{0.8}Mn_{0.2} a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T_f which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet.

cond-mat.mtrl-sci↗

arXiv2006

Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.

cond-mat.mtrl-sci↗

arXiv2003

Structural and doping effects in the half-metallic double perovskite $A_2$CrWO$_6$

he structural, transport, magnetic and optical properties of the double perovskite $A_2$CrWO$_6$ with $A=\text{Sr, Ba, Ca}$ have been studied. By varying the alkaline earth ion on the $A$ site, the influence of steric effects on the Curie temperature $T_C$ and the saturation magnetization has been determined. A maximum $T_C=458$ K was found for Sr$_2$CrWO$_6$ having an almost undistorted perovskite structure with a tolerance factor $f\simeq 1$. For Ca$_2$CrWO$_6$ and Ba$_2$CrWO$_6$ structural changes result in a strong reduction of $T_C$. Our study strongly suggests that for the double perovskites in general an optimum $T_C$ is achieved only for $f \simeq 1$, that is, for an undistorted perovskite structure. Electron doping in Sr$_2$CrWO$_6$ by a partial substitution of Sr$^{2+}$ by La$^{3+}$ was found to reduce both $T_C$ and the saturation magnetization $M_s$. The reduction of $M_s$ could be attributed both to band structure effects and the Cr/W antisites induced by doping. Band structure calculations for Sr$_2$CrWO$_6$ predict an energy gap in the spin-up band, but a finite density of states for the spin-down band. The predictions of the band structure calculation are consistent with our optical measurements. Our experimental results support the presence of a kinetic energy driven mechanism in $A_2$CrWO$_6$, where ferromagnetism is stabilized by a hybridization of states of the nonmagnetic W-site positioned in between the high spin Cr-sites.

cond-mat.str-el↗