arXiv subjects

M. Sanquer

Publications and source records attributed to M. Sanquer.

50 records · Page 3Linked to original sources

arXiv2004

Size scaling of the addition spectra in silicon quantum dots

We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were recorded at low temperature for various dot areas fixed by lithography. We compare the standard deviation of the addition spectra with theory in the high electron concentration regime. We find that the standard deviation scales as the inverse area of the dot and its absolute value is comparable to the energy spacing of the one particle spectrum.

cond-mat.mes-hall↗

arXiv2004

Mesoscopic transition in the shot noise of diffusive S/N/S junctions

We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delta and the phase coherence length L_Phi of the normal metal (xi_Delta < L < L_Phi). We measured the shot noise over a large range of energy covering both the regimes of coherent and incoherent multiple Andreev reflections. The transition between these two regimes occurs at the Thouless energy where a pronounced minimum in the current noise density is observed. Above the Thouless energy, in the regime of incoherent multiple Andreev reflections, the noise is strongly enhanced compared to a normal junction and grows linearly with the bias voltage. Semi-classical theory describes the experimental results accurately, when taking into account the voltage dependence of the resistance which reflects the proximity effect. Below the Thouless energy, the shot noise diverges with decreasing voltage which may indicate the coherent transfer of multiple charges.

cond-mat.mes-hall↗

arXiv2003

Doubled Full Shot Noise in Quantum Coherent Superconductor - Semiconductor Junctions

We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections at low energy and that shot noise is then twice the Poisson noise (S=4eI). The shot noise changes to the normal value (S=2eI) due to a large quasiparticle contribution.

cond-mat.mes-hall↗

arXiv2002

Inelastic relaxation and noise temperature in S/N/S junctions

We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60 micrometer have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enhanced heating of the electron gas confined between the two S/N interfaces. Experimental results are analyzed quantitatively taking into account electron-phonon interaction and heat transfer through the S/N interfaces. Transport measurements reveal that in all samples the two S/N interfaces are connected incoherently, as shown by the reentrance of the resistance at low temperature. The complementarity of noise and transport measurements allows us to show that the energy dependence of the reentrance at low voltage is essentially due to the increasing effective temperature of the quasiparticles in the normal metal.

cond-mat.mes-hall↗

arXiv2002

Mesoscopic proximity effect in double barrier Superconductor/Normal Metal junctions

We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multi-reflections of electrons between the two tunnel barriers. This conductance maximum is quantitatively fitted by the relevant theory of mesoscopic SININ structures. When the barrier at the SN interface is removed (SNIN structure), we observe a peak of conductance at finite voltage accompagnied by an excess of sub-gap conductance.

cond-mat.mes-hall↗

arXiv2000

Shot noise measurements in NS junctions and the semiclassical theory

We present a new analysis of shot noise measurements in normal metal-superconductor (NS) junctions [X. Jehl et al., Nature 405, 50 (2000)], based on a recent semiclassical theory. The first calculations at zero temperature assuming quantum coherence predicted shot noise in NS contacts to be doubled with respect to normal contacts. The semiclassical approach gives the first opportunity to compare data and theory quantitatively at finite voltage and temperature. The doubling of shot noise is predicted up to the superconducting gap, as already observed, confirming that phase coherence is not necessary. An excellent agreement is also found above the gap where the noise follows the normal case.

cond-mat.mes-hall↗

arXiv2000

Proximity effect in planar TiN-Silicon junctions

We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (''reflectionless tunneling''). This Zero Bias Anomaly (ZBA) is destroyed by the temperature or the magnetic field above 250mK or 0.04T respectively. The overall differential resistance behavior (vs temperature and voltage) is compared to existing theories and values for the depairing rate and the barrier transmittance are extracted. Such an analysis leads us to introduce an effective temperature for the electrons and to discuss heat dissipation through the SIN interface.

cond-mat.mes-hall↗

arXiv1999

Coulomb Blockade in low mobility nanometer size Si:MOSFETs

We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50 to 100nm and various widths at very low temperature. Independent of the geometry, localized states appear when G=e^{2}/h and transport is dominated by resonant tunnelling through a single quantum dot formed by an impurity potential. We find that the typical size of the relevant impurity quantum dot is comparable to the channel length and that the periodicity of the observed Coulomb blockade oscillations is roughly inversely proportional to the channel length. The spectrum of resonances and the nonlinear I-V curves allow to measure the charging energy and the mean level energy spacing for electrons in the localized state. Furthermore, we find that in the dielectric regime, the variance var(lng) of the logarithmic conductance lng is proportional to its average value consistent with one-electron scaling models.

cond-mat.mes-hall↗

arXiv1999

Proximity effect in planar Superconductor/Semiconductor junction

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the temperature is lowered, the resistance increases as expected in SIN junction. Around 300 mK, the resistance shows a maximum and decreases at lower temperature. This observed behavior is due to coherent backscattering towards the interface by disorder in Silicon ("Reflectionless tunneling"). This effect is also observed in the voltage dependence of the resistance (Zero Bias Anomaly) at low temperature (T<300 mK). The overall resistance behavior (in both its temperature and voltage dependence) is compared to existing theories and values for the depairing rate, the barrier resistance and the effective carrier temperature are extracted.

cond-mat.mes-hall↗

arXiv1999

Andreev Reflection Enhanced Shot Noise in Mesoscopic SNS Junctions

Current noise is measured with a SQUID in low impedance and transparent Nb-Al-Nb j unctions of length comparable to the phase breaking length and much longer than the thermal length. The shot noise amplitude is compared with theoretical predictions of doubled shot noise in diffusive normal/superconductor (NS) junctions due to the Andreev reflections. We discuss the heat dissipation away from the normal part through the NS interfaces. A weak applied magnetic field reduces the amplitude of the 1/f noise by a factor of two, showing that even far from equilibrium the sample is in the mesoscopic regime.

cond-mat.mes-hall↗

arXiv1999

SQUID based resistance bridge for shot noise measurement on low impedance samples

We present a resistance bridge which uses a SQUID to measure the shot noise in low impedance samples. The experimental requirements are high DC bias currents (typically 10mA) together with high AC sensitivity (pA/VHz). This system is used to investigate the shot noise in Superconductor/Normal/Superconductor junctions where Andreev reflection enhanced shot noise is expected. Because our setup has an intrinsic noise much smaller than the thermal noise of the resistance bridge at 4.2K, reliable results can be obtained on impedances out of the range of classical measurement schemes.

cond-mat.mes-hall↗

arXiv1997

Tunneling in very small GaAs MESFET

We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.

cond-mat.mes-hall↗

arXiv1997

Electron-electron interaction in doped GaAs at high magnetic field

We observe an inversion of the low temperature dependence for the conductivity of doped GaAs by application of a magnetic field. This inversion happens when Wct = 1, as predicted by Houghton (PRB25, 2196, 1982) for the correction to conductivity due to screened Coulomb repulsion in the diffusive regime. This correction follows the oscillating behavior of the transport elastic time entering the Shubnikov-de Haas regime. For Wct > 1, we observe that the Hartree part of the interaction correction is suppressed. Moreover, the total correction seems strongly reduced although its dependence stays logarithmic.

cond-mat.mes-hall↗

arXiv1993

Conductance statistics in small insulating GaAs:Si wires at low temperature. II. Experimental study

We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in terms of truncated quantum fluctuations. Quantum fluctuations due to small changes of the electron energy (controlled by the gate voltage) cannot develop fully due to identified geometrical fluctuations of the resistor network describing the hopping through the sample. The evolution of the fluctuations versus electron energy and magnetic field shows that the fluctuations are non-ergodic, except in the critical insulating region of the Anderson transition, where the localization length is larger than the distance between Si impurities. The mean magnetoconductance is in good accordance with simulations based on the Forward-Directed-Paths analysis, i.e. it saturates to $ {\rm ln} (σ(H>1)/σ(0))\simeq 1, $ as $ σ(0) $ decreases over orders of magnitude in the strongly localized regime.

cond-mat↗