arXiv subjects

M. Shayegan

Publications and source records attributed to M. Shayegan.

At least 55 records · Page 3Linked to original sources

arXiv2019

Geometric Resonance of Four-Flux Composite Fermions

Two-dimensional interacting electrons exposed to strong perpendicular magnetic fields generate emergent, exotic quasiparticles phenomenologically distinct from electrons. Specifically, electrons bind with an even number of flux quanta, and transform into composite fermions (CFs). Besides providing an intuitive explanation for the fractional quantum Hall states, CFs also possess Fermi-liquid-like properties, including a well-defined Fermi sea, at and near even-denominator Landau level filling factors such as $ν=1/2$ or $1/4$. Here, we directly probe the Fermi sea of the rarely studied four-flux CFs near $ν=1/4$ via geometric resonance experiments. The data reveal some unique characteristics. Unlike in the case of two-flux CFs, the magnetic field positions of the geometric resonance resistance minima for $ν<1/4$ and $ν>1/4$ are symmetric with respect to the position of $ν=1/4$. However, when an in-plane magnetic field is applied, the minima positions become asymmetric, implying a mysterious asymmetry in the CF Fermi sea anisotropy for $ν<1/4$ and $ν>1/4$. This asymmetry, which is in stark contrast to the two-flux CFs, suggests that the four-flux CFs on the two sides of $ν=1/4$ have very different effective masses, possibly because of the proximity of the Wigner crystal formation at small $ν$.

cond-mat.str-el↗

arXiv2019

Probing the Melting of a Two-dimensional Quantum Wigner Crystal via its Screening Efficiency

One of the most fundamental and yet elusive collective phases of an interacting electron system is the quantum Wigner crystal (WC), an ordered array of electrons expected to form when the electrons' Coulomb repulsion energy eclipses their kinetic (Fermi) energy. In low-disorder, two-dimensional (2D) electron systems, the quantum WC is known to be favored at very low temperatures ($T$) and small Landau level filling factors ($ν$), near the termination of the fractional quantum Hall states. This WC phase exhibits an insulating behavior, reflecting its pinning by the small but finite disorder potential. An experimental determination of a $T$ vs $ν$ phase diagram for the melting of the WC, however, has proved to be challenging. Here we use capacitance measurements to probe the 2D WC through its effective screening as a function of $T$ and $ν$. We find that, as expected, the screening efficiency of the pinned WC is very poor at very low $T$ and improves at higher $T$ once the WC melts. Surprisingly, however, rather than monotonically changing with increasing $T$, the screening efficiency shows a well-defined maximum at a $T$ which is close to the previously-reported melting temperature of the WC. Our experimental results suggest a new method to map out a $T$ vs $ν$ phase diagram of the magnetic-field-induced WC precisely.

cond-mat.mes-hall↗

arXiv2018

Unconventional anisotropic even-denominator fractional quantum Hall state in a system with mass anisotropy

The fractional quantum Hall state (FQHS) observed at a half-filled Landau level in an interacting two-dimensional electron system (2DES) is among the most exotic states of matter as its quasiparticles are expected to be Majoranas with non-Abelian statistics. We demonstrate here the unexpected presence of such a state in a novel 2DES with a strong band-mass anisotropy. The FQHS we observe has unusual characteristics. While its Hall resistance is well-quantized at low temperatures, it exhibits highly-anisotropic in-plane transport resembling compressible stripe/nematic charge-density-wave phases. More striking, the anisotropy sets in suddenly below a critical temperature, suggesting a finite-temperature phase transition. Our observations highlight how anisotropy modifies the many-body phases of a 2DES, and should further fuel the discussion surrounding the enigmatic even-denominator FQHS.

cond-mat.mes-hall↗

arXiv2018

Wigner solids of wide quantum wells near Landau filling $ν=1$

Microwave spectroscopy within the Landau filling ($ν$) range of the integer quantum Hall effect (IQHE) has revealed pinning mode resonances signifying Wigner solids (WSs) composed of quasi-particles or -holes. We study pinning modes of WSs in wide quantum wells (WQWs) for $ 0.8\leν\le1.2$, varying the density, $n$, and tilting the sample by angle $θ$ in the magnetic field. Three distinct WS phases are accessed. One phase, S1, is phenomenologically the same as the WS observed in the IQHEs of narrow QWs. The second phase, S2, exists at $ν$ further from $ν=1$ than S1, and requires a sufficiently large $n$ or $θ$, implying S2 is stabilized by the Zeeman energy. The melting temperatures of S1 and S2, estimated from the disappearance of the pinning mode, show different behavior vs $ν$. At the largest $n$ or $θ$, S2 disappears and the third phase, S1A, replaces S1, also exhibiting a pinning mode. This occurs as the WQW $ν=1$ IQHE becomes a two-component, Halperin-Laughlin $\pone$ state. We interpret S1A as a WS of the excitations of $\pone$, which has not been previously observed.

cond-mat.mes-hall↗

arXiv2018

Wigner solid pinning modes tuned by fractional quantum Hall states of a nearby layer

We study a bilayer system hosting exotic many-body states of two-dimensional electron systems (2DESs) in close proximity but isolated from one another by a thin barrier. One 2DES has low electron density and forms a Wigner solid (WS) at high magnetic fields. The other has much higher density and, in the same field exhibits fractional quantum Hall states (FQHSs). The WS manifests microwave resonances which are understood as pinning modes, collective oscillations of the WS within the small but finite ubiquitous disorder. Our measurements reveal a striking evolution of the pinning mode frequencies of the WS layer with the formation of the FQHSs in the nearby layer, evincing a strong coupling between the WS pinning modes and the state of the 2DES in the adjacent layer, mediated by screening.

cond-mat.mes-hall↗

arXiv2018

Critical Filling Factor for the Formation of a Quantum Wigner Crystal Screened by a Nearby Layer

One of the most fascinating ground states of an interacting electron system is the so-called Wigner crystal where the electrons, in order to minimize their repulsive Coulomb energy, form an ordered array. Here we report measurements of the critical filling factor ($ν_{C}$) below which a magnetic-field-induced, quantum Wigner crystal forms in a dilute, two-dimensional electron layer when a second, high-density electron layer is present in close proximity. The data reveal that the Wigner crystal forms at a significantly smaller $ν_{C}$ compared to the $ν_{C}$ ($\simeq 0.20$) in single-layer two-dimensional electron systems. The measured $ν_{C}$ exhibits a strong dependence on the interlayer distance, reflecting the interaction and screening from the adjacent, high-density layer.

cond-mat.mes-hall↗

arXiv2018

Anomalous coupling between magnetic and nematic orders in quantum Hall systems

The interplay between different orders is of fundamental importance in physics. The spontaneous, symmetry-breaking charge order, responsible for the stripe or the nematic phase, has been of great interest in many contexts where strong correlations are present, such as high-temperature superconductivity and quantum Hall effect. In this article we show the unexpected result that in an interacting two-dimensional electron system, the robustness of the nematic phase, which represents an order in the charge degree of freedom, not only depends on the orbital index of the topmost, half-filled Landau level, but it is also strongly correlated with the magnetic order of the system. Intriguingly, when the system is fully magnetized, the nematic phase is particularly robust and persists to much higher temperatures compared to the nematic phases observed previously in quantum Hall systems. Our results give fundamental new insight into the role of magnetization in stabilizing the nematic phase, while also providing a new knob with which it can be effectively tuned.

cond-mat.mes-hall↗

arXiv2018

Multivalley two-dimensional electron system in an AlAs quantum well with mobility exceeding $2\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$

Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present exciting opportunities for both pragmatic and fundamental research alike because not only are they a platform for valleytronic devices, but they also provide a tool to tune and investigate the properties of complex many-body ground states. Here, we report ultra-high quality, modulation doped AlAs quantum wells containing 2DESs that occupy two anisotropic valleys and have electron mobilities peaking at $2.4\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$ at a density of $2.2\times10^{11}$ cm$^{-2}$. This is more than an order of magnitude improvement in mobility over previous results. The unprecedented quality of our samples is demonstrated by magneto-transport data that show high-order fractional quantum Hall minima up to the Landau level filling $ν=8/17$, and even the elusive $ν=1/5$ quantum Hall state.

cond-mat.mes-hall↗

arXiv2018

Realization of a Valley Superlattice

In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also known as "valleys". External symmetry breaking fields such as mechanical strain, or electric or magnetic fields, can tune the valley-polarization of these materials making them suitable candidates for "valleytronics". Here we study a quantum well of AlAs, where the two-dimensional electrons reside in two energetically degenerate valleys. By fabricating a strain-inducing grating on the sample surface, we engineer a spatial modulation of the electron population in different valleys, i.e., a "valley superlattice" in the quantum well plane. Our results establish a novel manipulation technique of the valley degree of freedom, paving the way to realizing a valley-selective layered structure in multi-valley materials, with potential application in valleytronics.

cond-mat.mes-hall↗

arXiv2018

Direct observation of composite fermions and their fully spin-polarized Fermi sea near $ν=5/2$

The enigmatic even-denominator fractional quantum Hall state at Landau level filling factor $ν=5/2$ is arguably the most promising candidate for harboring Majorana quasi-particles with non-Abelian statistics and thus of potential use for topological quantum computing. The theoretical description of the $ν=5/2$ state is generally believed to involve a topological p-wave pairing of fully spin-polarized composite fermions through their condensation into a non-Abelian Moore-Read Pfaffian state. There is, however, no direct and conclusive experimental evidence for the existence of composite fermions near $ν=5/2$ or for an underlying fully spin-polarized Fermi sea. Here, we report the observation of composite fermions very near $ν=5/2$ through geometric resonance measurements, and find that the measured Fermi wavevector provides direct demonstration of a Fermi sea with full spin polarization. This lends crucial credence to the model of $5/2$ fractional quantum Hall effect as a topological p-wave paired state of composite fermions.

cond-mat.mes-hall↗

arXiv2018

Surface segregation and the Al problem in GaAs quantum wells

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped Al$_x$Ga$_{1-x}$As/GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the Al$_x$Ga$_{1-x}$As barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the Al$_x$Ga$_{1-x}$As barrier beneath the QW is increased, which we attribute to the surface segregation of Oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

cond-mat.mes-hall↗

arXiv2018

Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime

We study a bilayer GaAs hole system that hosts two distinct many-body phases at low temperatures and high perpendicular magnetic fields. The higher-density (top) layer develops a Fermi sea of composite fermions (CFs) in its half-filled lowest Landau level, while the lower-density (bottom) layer forms a Wigner crystal (WC) as its filling becomes very small. Owing to the inter-layer interaction, the CFs in the top-layer feel the periodic Coulomb potential of the WC in the bottom-layer. We measure the magnetoresistance of the top-layer while changing the bottom-layer density. As the WC layer density increases, the resistance peaks separating the adjacent fractional quantum Hall states in the top-layer change nonmonotonically and attain maximum values when the cyclotron orbit of the CFs encloses one WC lattice point. These features disappear at T = 275 mK when the WC melts. The observation of such geometric resonance features is unprecedented and surprising as it implies that the CFs retain a well-defined cyclotron orbit and Fermi wave vector even deep in the fractional quantum Hall regime, far from half-filling.

cond-mat.mes-hall↗

arXiv2017

Observation of fractional quantum Hall effect in an InAs quantum well

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here we report the observation of fractional quantum Hall effect in a very low disorder InAs quantum well with a well-width of 24 nm, containing a two-dimensional electron system with a density $n=7.8 \times 10^{11}$ cm$^{-2}$ and low-temperature mobility $1.8 \times 10^6$ cm$^2$/Vs. At a temperature of $\simeq35$ mK and $B\simeq24$ T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at Landau level filling factor $ν=4/3$.

physics.app-ph↗

arXiv2017

Interaction-induced Interlayer Charge Transfer in the Extreme Quantum Limit

An interacting bilayer electron system provides an extended platform to study electron-electron interaction beyond single layers. We report here experiments demonstrating that the layer densities of an asymmetric bilayer electron system oscillate as a function of perpendicular magnetic field that quantizes the energy levels. At intermediate fields, this interlayer charge transfer can be well explained by the alignment of the Landau levels in the two layers. At the highest fields where both layers reach the extreme quantum limit, however, there is an anomalous, enhanced charge transfer to the majority layer. Surprisingly, when the minority layer becomes extremely dilute, this charge transfer slows down as the electrons in the minority layer condense into a Wigner crystal. Furthermore, by examining the quantum capacitance of the dilute layer at high fields, the screening induced by the composite fermions in an adjacent layer is unveiled. The results highlight the influence of strong interaction in interlayer charge transfer in the regime of very high fields and low Landau level filling factors.

cond-mat.mes-hall↗

arXiv2017

Tuning of Fermi Contour Anisotropy in GaAs (001) 2D Holes via Strain

We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of $10^{-4}$, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy \textit{in situ} provides a platform to study the role of anisotropy on phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.

cond-mat.mes-hall↗

arXiv2017

Search for Composite Fermions at Filling Factor 5/2: Role of Landau Level and Subband Index

The pairing of composite fermions (CFs), electron-flux quasi-particles, is commonly proposed to explain the even-denominator fractional quantum Hall state observed at $ν=5/2$ in the first excited ($N=1$) Landau level (LL) of a two-dimensional electron system (2DES). While well-established to exist in the lowest ($N=0$) LL, much is unknown about CFs in the $N=1$ LL. Here we carry out geometric resonance measurements to detect CFs at $ν=5/2$ by subjecting the 2DES to a one-dimensional density modulation. Our data, taken at a temperature of 0.3 K, reveal no geometric resonances for CFs in the $N=1$ LL. In stark contrast, we observe clear signatures of such resonances when $ν=5/2$ is placed in the $N=0$ LL of the anti-symmetric subband by varying the 2DES width. This finding implies that the CFs' mean-free-path is significantly smaller in the $N=1$ LL compared to the $N=0$ LL. Our additional data as a function of in-plane magnetic field highlight the role of subband index and establish that CFs at $ν=5/2$ in the $N=0$ LL are more anisotropic in the symmetric subband than in the anti-symmetric subband.

cond-mat.mes-hall↗

arXiv2017

Transference of Fermi Contour Anisotropy to Composite Fermions

There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero magnetic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quantum Hall states (FQHSs). We demonstrate here tunable anisotropy for holes and hole-flux CFs confined to GaAs quantum wells, via applying \textit{in situ} in-plane strain and measuring their Fermi wavevector anisotropy through commensurability oscillations. For strains on the order of $10^{-4}$ we observe significant deformations of the shapes of the Fermi contours for both holes and CFs. The measured Fermi contour anisotropy for CFs at high magnetic field ($α_\mathrm{CF}$) is less than the anisotropy of their low-field hole (fermion) counterparts ($α_\mathrm{F}$), and closely follows the relation: $α_\mathrm{CF} = \sqrt{α_\mathrm{F}}$. The energy gap measured for the $ν= 2/3$ FQHS, on the other hand, is nearly unaffected by the Fermi contour anisotropy up to $α_\mathrm{F} \sim 3.3$, the highest anisotropy achieved in our experiments.

cond-mat.mes-hall↗

arXiv2017

Interplay between Quantum Well Width and Interface Roughness for Electron Transport Mobility in GaAs Quantum Wells

We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of QWs with Al$_{0.32}$Ga$_{0.68}$As barriers, and one with additional AlAs cladding surrounding the QWs. Our results indicate that the mobility in narrow QWs with no cladding is consistent with existing theoretical calculations where interface roughness effects are softened by the penetration of the electron wave function into the adjacent low barriers. In contrast, data from AlAs-clad wells show a number of samples where the 2D electron mobility is severely limited by interface roughness. These measurements across three orders of magnitude in mobility provide a road map of reachable mobilities in the growth of GaAs structures of different electron densities, well widths, and barrier heights.

cond-mat.mes-hall↗