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M. Weides

Publications and source records attributed to M. Weides.

44 records · Page 3Linked to original sources

Magnetic anisotropy in ferromagnetic Josephson junctions

Magnetotransport measurements were done on $\Nb/\Al_2Ø_3/\Cu/\Ni/\Nb$ superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Depending on ferromagnetic $\Ni$ interlayer thickness and geometry the standard (1d) magnetic field dependence of critical current deviates from the text-book model for Josephson junctions. The results are qualitatively explained by a short Josephson junction model based on anisotropy and 2d remanent magnetization.

cond-mat.supr-con↗

Static and dynamic properties of 0, pi, and 0-pi ferromagnetic tunnel Josephson Junctions

We present experimental studies of static and dynamic properties of 0, pi and 0-pi superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions of small and intermediate length. In the underdamped limit these junctions exhibit a rich dynamical behavior such as resonant steps on the current-voltage characteristics. Varying the experimental conditions, zero field steps, Fiske steps and Shapiro steps are observed with a high resolution. A strong signature of the 0-pi Josephson junction is demonstrated by measuring the critical current as a function of two components (B_x, B_y) of an in-plane magnetic field. The experimental observation of a half-integer zero field step in 0-pi SIFS junctions is presented.

cond-mat.supr-con↗

Properties of tunnel Josephson junctions with a ferromagnetic interlayer

We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We formulate a quantitative model describing the oscillations of critical current as a function of thickness of the ferromagnetic layer and use this model to fit recent experimental data. We also calculate quantitatively the density of states (DOS) in this type of junctions and compare DOS oscillations with those of the critical current.

cond-mat.supr-con↗

Ferromagnetic 0-pi Josephson junctions

We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with high-quality samples. Depending on the thickness of the ferromagnetic layer and on temperature, the SIFS junctions are in the ground state with a phase drop either 0 or $π$. By using a ferromagnetic layer with variable step-like thickness along the junction, we obtained a so-called 0-$π$ Josephson junction, in which 0 and $π$ ground states compete with each other. At a certain temperature the 0 and $π$ parts of the junction are perfectly symmetric, i.e. the absolute critical current densities are equal. In this case the degenerate ground state corresponds to a vortex of supercurrent circulating clock- or counterclockwise and creating a magnetic flux which carries a fraction of the magnetic flux quantum $Φ_0$.

cond-mat.supr-con↗

Low-T_c Josephson junctions with tailored barrier

Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.

cond-mat.supr-con↗

0-pi Josephson tunnel junctions with ferromagnetic barrier

We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.

cond-mat.supr-con↗

High quality ferromagnetic 0 and pi Josephson tunnel junctions

We fabricated high quality $\Nb/\Al_2Ø_3/\Ni_{0.6}\Cu_{0.4}/\Nb$ superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic $\Ni_{0.6}\Cu_{0.4}$ layer and on the ambient temperature, the junctions were in the 0 or $π$ ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The $\Al_2Ø_3$ tunnel barrier allows to achieve rather low damping, which is desired for many experiments especially in the quantum domain. The McCumber parameter $β_c$ increases exponentially with decreasing temperature and reaches $β_c\approx700$ at $T=2.1 {\rm K}$. The critical current density in the $π$ state was up to $5\:\rm{A/cm^2}$ at $T=2.1 {\rm K}$, resulting in a Josephson penetration depth $λ_J$ as low as $160\:\rm{μm}$. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the $\Ni_{0.6}\Cu_{0.4}$ layer and different transparencies of the interfaces.

cond-mat.supr-con↗

Fabrication of high quality ferromagnetic Josephson junctions

We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu layer below the ferromagnetic NiCu (SINFS) lowered interface roughness and ensured very homogeneous current transport. A high yield of junctional devices with jc spreads less than 2% was obtained.

cond-mat.supr-con↗