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M. Y. Simmons

Publications and source records attributed to M. Y. Simmons.

At least 73 records · Page 4Linked to original sources

Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime

On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\hbar $ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($dρ/dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant $F_0^σ$ which controls the sign of $dρ/dT$.

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Towards the fabrication of phosphorus qubits for a silicon quantum computer

The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of such devices however requires atomic scale manipulation - an immense technological challenge. We demonstrate that it is possible to fabricate an atomically-precise linear array of single phosphorus bearing molecules on a silicon surface with the required dimensions for the fabrication of a silicon-based quantum computer. We also discuss strategies for the encapsulation of these phosphorus atoms by subsequent silicon crystal growth.

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Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory for small r_s.

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Coulomb blockade of tunnelling through compressible rings formed around an antidot: an explanation for $h/2e$ Aharonov-Bohm oscillations

We consider single-electron tunnelling through antidot states using a Coulomb-blockade model, and give an explanation for h/2e Aharonov-Bohm oscillations, which are observed experimentally when the two spins of the lowest Landau level form bound states. We show that the edge channels may contain compressible regions, and using simple electrostatics, that the resonance through the outer spin states should occur twice per h/e period. An antidot may be a powerful tool for investigating quantum Hall edge states in general, and the interplay of spin and charging effects that occurs in quantum dots.

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Spin Properties of Low Density One-Dimensional Wires

We report conductance measurements of a ballistic one-dimensional (1D) wire defined in the lower two-dimensional electron gas of a GaAs/AlGaAs double quantum well. At low temperatures there is an additional structure at $0.7(2e^2/h)$ in the conductance, which tends to $e^2/h$ as the electron density is decreased. We find evidence for complete spin polarization in a weakly disorderd 1D wire at zero magnetic field through the observation of a conductance plateau at $e^2/h$, which strengthens in an in-plane magnetic field and disappears with increasing electron density. In all cases studied, with increasing temperature structure occurs at $0.6(2e^2/h)$. We suggest that the 0.7 structure is a many-body spin state excited out of, either the spin-polarized electron gas at low densities, or the spin-degenerate electron gas at high densities.

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On the metallic behaviour in dilute two-dimensional systems

We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like behaviour. Firstly the strength of the metallic behaviour is almost independent of the symmetry of the confining potential, and is predominantly determined by the low temperature resistivity (i.e. by k_F*l). Secondly the fractional decrease in conductivity with increasing temperature depends only on T/T_F, independent of the carrier density, in both systems.

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Coulomb Charging Effects in an Open Quantum Dot

Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are observed, when the conductance G of the dot changes within a wide range 0 2e^2/h may be due to suppression of inter-1D-subband scattering. Fully transmitted subbands contribute to coherent background of conductance, while sequential tunneling via weakly transmitted subbands leads to Coulomb charging of the dot.

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Spin-dependent transport in a quasiballistic quantum wire

We describe the transport properties of a 5 $μ$m long one-dimensional (1D) quantum wire. Reduction of conductance plateaux due to the introduction of weakly disorder scattering are observed. In an in-plane magnetic field, we observe spin-splitting of the reduced conductance steps. Our experimental results provide evidence that deviation from conductance quantisation is very small for electrons with spin parallel and is about 1/3 for electrons with spin anti-parallel. Moreover, in a high in-plane magnetic field, a spin-polarised 1D channel shows a plateau-like structure close to $0.3 \times e^2/h$ which strengthens with {\em increasing} temperatures. It is suggested that these results arise from the combination of disorder and the electron-electron interactions in the 1D electron gas.

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Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions

A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high quality of these systems, both weak localisation (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. The results suggest that even at high $r_{s}$ there is no metallic phase at T=0 in two dimensions.

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Modification of 1D Ballistic Transport using an Atomic Force Microscope

We have used the scanning charged tip of an Atomic Force Microscope (AFM) to produce images of the conductance variation of a quantised 1D ballistic channel. The channel was formed using electron beam defined 700 nm wide split gate surface electrodes over a high mobility GaAs/AlGaAs heterostructure with a two dimensional electron gas (2DEG) 98 nm beneath the surface. We operate the AFM at 1.5 K and 4.2 K in magnetic fields up to 2 T to observe several phenomena. With a dc voltage on the AFM tip we have produced conduction images of the tip potential perturbation, as the channel is a sensitive probe of the electrostatic potential. We have also performed gate sweeps with the tip at a series of points across the width of the channel. The observed structure in transconductance corresponds to the theoretical electron density for the first three sub-bands. When certain gates were biased near pinch off, stable two level switching was observed in the images. We were able to control the state of the switch with the gate bias and tip position, and so roughly locate the position of the switching source. One of the responsible defect systems was located beneath the 2DEG, and due to screening of the tip potential, the image reveals the 1D channel. By asymmetrically biasing the two gate electrodes we have produced images showing a total channel movement of 102 nm across the width of the channel, but accompanied by 201 nm of movement along the length of the channel which is due to imperfections in the surface electrodes and disorder in the doping layer.

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Electron Correlations in an Electron Bilayer at Finite Temperature: Landau Damping of the Acoustic Plasmon

We report angle-resolved Raman scattering observations of the temperature dependent Landau damping of the acoustic plasmon in an electron bilayer system realised in a GaAs double quantum well structure. Corresponding calculations of the charge-density excitation spectrum of the electron bilayer using forms of the random phase approximation (RPA), and the static local field formalism of Singwi, Tosi, Land and Sjölander (STLS) extended to incorporate non-zero electron temperature $T_{\rm e}$ and phenomenological damping, are also presented. The STLS calculations include details of the temperature dependence of the intra- and inter-layer local field factors and pair-correlation functions. Good agreement between experiment and the various theories is obtained for the acoustic plasmon energy and damping for $T_{\rm e} \lesssim T_{\rm F}/2$, the Fermi temperature. However, contrary to current expectations, all of the calculations show significant departures from our experimental data for $T_{\rm e} \gtrsim T_{\rm F}/2$. From this, we go on to demonstrate unambiguously that real local field factors fail to provide a physically accurate description of exchange correlation behaviour in low dimensional electron gases. Our results suggest instead that one must resort to a {\em{dynamical}} local field theory, characterised by a {\em{complex}} field factor to provide a more accurate description.

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Detection of Coulomb Charging around an Antidot

We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a perpendicular magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up for an electron to tunnel out. This is a new form of the Coulomb blockade seen in electrostatically confined dots. We have also studied h/2e oscillations and found evidence for coupling of opposite spin states of the lowest Landau level.

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Detection of Coulomb Charging around an Antidot in the Quantum Hall Regime

We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a large magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up for an electron to tunnel out. This is a new form of the Coulomb blockade seen in electrostatically confined dots. Addition and excitation spectra in DC bias confirm the Coulomb blockade of tunnelling.

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Spin-dependent transport in a clean one-dimensional channel

A shoulder-like feature close to $(0.7\times 2e^{2}/h)$, "the 0.7 structure" at zero magnetic field was observed in clean one-dimensional (1D) channels [K.J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)]. To provide further understanding of this structure, we have performed low-temperature measurements of a novel design of 1D channel with overlaying finger gates to study the 0.7 structure as a function of lateral confinement strength and potential profile. We found that the structure persists when the lateral confinement strength is changed by a factor of 2. We have also shown that the 0.7 structure present in two 1D channels in series behaves like a single 1D channel which shows the 0.7 structure, demonstrating that the 0.7 structure is not a transmission effect through a ballistic channel at zero in-plane magnetic field.

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Controlled Wavefunction Mixing in a Strongly Coupled One-Dimensional Wire

We investigate the transport properties of two strongly coupled ballistic one-dimensional (1D) wires, defined by a split-gate structure deposited on a GaAs/AlGaAs double quantum well. Matching the widths and electron densities of the two wires brings them into resonance, forming symmetric and antisymmetric 1D subbands separated by energy gaps that are measured to be larger than their two-dimensional counterpart. Applying a magnetic field parallel to the wire axes enhances wavefunction mixing at low fields, whereas at high fields the wires become completely decoupled.

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Experimental Evidence for Coulomb Charging Effects in an Open Quantum Dot at Zero Magnetic Field

We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic conductance steps are observed when the conductance through the dot $G$ exceeds $2e^2/h$. We ascribe the observed conductance oscillations to evidence for Coulomb charging effects in an open dot. This is supported by the evolution of the oscillating features for $G>2e^2/h$ as a function of both temperature and barrier transparency. Our results strongly suggest that at zero magnetic field, current theoretical and experimental understanding of Coulomb charging effects overlooks charging in the presence of fully transmitted 1D channels.

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A Thermometer for the 2D Electron Gas using 1D Thermopower

We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ballistic constriction, using the Mott relation to confirm the calibration from the electrical conductance. Under hot electron conditions, this technique shows that the power loss by the electrons follows a $T^5$ dependence in the Gruneisen-Bloch regime, as predicted for acoustic phonon emission with a screened piezoelectric interaction. An independent measurement using conventional thermometry based on Shubnikov-de Haas oscillations gives a $T^3$ loss rate; we discuss reasons for this discrepancy.

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Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas

We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the carrier density is increased a metallic phase forms, with a clear transition at σ= ~5e^2/h. Further increasing the density weakens the metallic behaviour, and eventually leads to the formation of a second insulating state for σ> ~50e^2/h. In the limit of high carrier densities, where k_F.l is large and r_s is small, we thus recover the results of previous work on weakly interacting systems showing the absence of a metallic state in 2D.

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