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M. Z. Hasan

Publications and source records attributed to M. Z. Hasan.

At least 73 records · Page 4Linked to original sources

Topological Insulators

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.

cond-mat.mes-hall↗

Discovery of several large families of Topological Insulator classes with backscattering-suppressed spin-polarized single-Dirac-cone on the surface

Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and fundamental physics. Experimental realization of many of the predicted topological phenomena requires finding multi-variant topological band insulators which can be multiply connected to magnetic semiconductors and superconductors. Here we present our theoretical prediction and experimental discovery of several new topological insulator classes in AB2X4(124), A2B2X5(225), MN4X7(147), A2X2X'(221) [A,B=Pb,Ge,Sb,Bi and M,N=Pb,Bi and X,X'=Chalcogen family]. We observe that these materials feature gaps up to about 0.35eV. Multi-variant nature allows for diverse surface dispersion tunability, Fermi surface spin-vortex or textured configurations and spin-dependent electronic interference signaling novel quantum transport processes on the surfaces of these materials. Our discovery also provides several new platforms to search for topological-superconductivity (arXiv:0912.3341v1 (2009)) in these exotic materials.

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Single-Dirac-Cone topological surface states in TlBiSe2 class of Topological Insulators

We have investigated several strong spin-orbit coupling ternary chalcogenides related to the (Pb,Sn)Te series of compounds. Our first-principles calculations predict the low temperature rhombohedral ordered phase in TlBiTe2, TlBiSe2, and TlSbX2 (X=Te, Se, S) to be topologically Kane-Mele Z2 = -1 nontrivial. We identify the specific surface termination that realizes the single Dirac cone through first-principles surface state computations. This termination minimizes effects of dangling bonds making it favorable for photoemission (ARPES) experiments. Our analysis predicts that thin films of these materials would harbor novel 2D quantum spin Hall states, and support odd-parity topological superconductivity. For a related work also see arXiv:1003.2615v1. Experimental ARPES results will be published elsewhere.

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Single-Dirac-cone Z2 topological insulator phases in distorted Li2AgSb-class and related quantum critical Li-based spin-orbit compounds

We have extended our new materials class search for the experimental realization of Z2 topological insulators from binary [Bi2Se3-class, Xia et.al., Nature Phys. 5, 398 (2009)] and the ternary [Half-Heusler class, Lin et.al., arXiv:1003.0155v1 (2010); arXiv:1003.2615v1 (2010)] series to non-Heusler Li-based ternary intermetallic series Li2M'X ($M'$=Cu, Ag, and Au, $X$=Sb and Bi) with CuHg2Ti-type structure. We discovered that the distorted-Li2AgSb is a lightweight compound harboring a 3D topological insulator state with Z2=-1 although the groundstate lies near a critical point, whereas the related Li2CuSb-type compounds are topologically trivial. Non-Heusler ternary Li2M'X series (with a number of variant compounds) we identified here is a new platform for deriving novel stoichiometric compounds, artificial quantum-well/heterostructures, nano-wires, nano-ribbons and nanocrystals. We have grown some of these bulk materials (experimental results will be reported separately).

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Single-Dirac-Cone topological surface states on pseudo-IV-VI-semimetal/semiconductors: Thallium-based III-V-VI2 Ternary Chalcogenides

We have investigated several classes of strong spin-orbit chalcogenides related to the (Pb,Sn)Te series studied in connection with the Dirac fermion physics in the 1980s. Our first-principle theoretical calculations suggest that ternary chalcogenides TlBiX$_2$ and TlSbX$_2$ (X=Te, Se, S) series harbor small bandgap topological insulators with single Dirac cone on some selective surfaces whereas the isostructural and isoelectronic silver-based AgBiX$_2$ and AgSbX$_2$ (X=Te, Se, S) series do not. We find that several Tl-compounds are in the vicinity of a topological critical point. We identify the precise surface termination that realizes the single Dirac cone. The single-Dirac-cone surface is shown to be correlated with a termination that minimizes dangling bonding effects favorable for ARPES experiments. Our results further suggest that this class of topological semi-metals may harbor odd-parity topological superconductors similar to the possibility proposed for CuxBi2Se3 (T_c ~ 4K).

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A new platform for topological quantum phenomena : Topological Insulator states in thermoelectric Heusler-related ternary compounds

Topological insulators (TI) realize a novel state of quantum matter that are distinguished by topological invariants of bulk band structure rather than spontaneously broken symmetries. A number of exotic quantum phenomena have been predicted to exist in multiply-connected geometries which require an enormous amount of materials flexibility. We have extended our previous search for TI materials from binary (Bi2X3 series) to the thermoelectric ternary compounds. We discover that the distorted LuPtSb is the first ternary compound harboring a 3D topological insulator state. We also show that the half-Heusler LuPtSb-type series is a natural platform that hosts a range of candidate compounds, alloys and artificial heterostructures (quantum-wells). We also discovered several different paradigms of trivial and non-trivial topological ordering in this class, including a metallic nontrivial topological state in YAuPb. Some of these materials are grown (results will be reported separately).

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The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi1.96Mn0.04Te3 and Bi1.91Mn0.09Te3 a second order ferromagnetic transition is observed, with Tc ~ 9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p-type. Angle resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2Te3 are also present in ferromagnetic Mn-doped Bi2-xMnxTe3, and that the dispersion relations of the surface states are changed in a subtle fashion.

cond-mat.mtrl-sci↗

Direct observation of spin-polarized surface states in the parent compound of a topological insulator using high-resolution spin-resolved-ARPES spectroscopy in a Mott-polarimetry mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a k-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of topological insulator states in the Bi-Sb series.

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First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009) http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html]. Here we report the first observation of Spin-Momentum Helical Locking and Spin-Vortex structures in Bi2Se3 and Bi2Te3, demonstrate the existence of Topological-Order at 300K and report a material realization of topological-transport-regime for helical Dirac fermions. Our results reveal a one-to-one spin-momentum locked Dirac structure in Bi2Se3 and Bi2Te3 that is nearly 100% spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological-transport-regime. The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K). Our results pave the way for future transport based studies of topological insulators, and possible room temperature applications of protected spin-polarized edge channels we observe with spin-ARPES in spintronic technology. All of these new results are made possible due to the Spin-resolved-ARPES (Mott polarimetric) technique [http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html ] .

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Observation of intertwined Fermi surface topology, orbital parity symmetries and electronic interactions in iron arsenide superconductors

We present a polarization and topology resolved study of the low energy band structure in optimally doped superconducting Ba0.6K0.4Fe2As2 using angle resolved photoemission spectroscopy. Polarization-contrasted measurements allow us to identify and trace all low energy bands expected in models, revealing unexpected symmetry breaking and a surprisingly intertwined Fermi surface topology of hole-like bands near the Brillouin zone center. Band structure correlations across the Gamma-M spin fluctuation wavevector are compared with the superconducting gap anisotropy which suggest a partial scenario for spin-mediated interband instability contributing to superconductivity in the hole doped regime.

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Spin-textures, Berry's phase and Quasiparticle Interference in Bi2Te3: A Topological Insulator with Warped Surface States

The energy-momentum relationship of electrons on the surface of an ideal "Hydrogen-Atom" Topological Insulator forms a cone - a Dirac cone, which, when warped and distorted (no longer described by the Dirac equation), can lead to unusual phenomena such as enhanced electronic interference around defects (observed in STM) and a magnetically ordered broken symmetry surface with lost topological protection. A detailed spin-texture and hexagonal warping maps on Bi2Te3 are presented in this context as a Viewpoint on L.Fu, Phys. Rev. Lett. \textbf{103}, 266801 (2009).

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Observation of unconventional band topology in a superconducting doped topological insulator, Cux-Bi2Se3: Topological Superconductor or non-Abelian superconductor?

The Cu-doped topological insulator Bi$_2$Se$_3$ has recently been found to undergo a superconducting transition upon cooling, raising the possibilities that it is the first known "topological superconductor" or realizes a novel non-Abelian superconducting state. Its true nature depends critically on the bulk and surface state band topology. We present the first photoemission spectroscopy results where by examining the band topology at many different copper doping values we discover that the topologically protected spin-helical surface states remain well protected and separate from bulk Dirac bands at the Fermi level where Copper pairing occurs in the optimally doped topological insulator. The addition of copper is found to result in nonlinear electron doping and strong renormalization of the topological surface states. These highly unusual observations strongly suggest that superconductivity on the topological surface of Cu$_x$Bi$_2$Se$_3$ cannot be of any conventional type in account of the general topological theory. Characteristics of the three dimensional bulk Dirac band structure are reported for the first time with respect to the superconducting doping state and topological invariant properties which should help formulate a specific theory for this novel superconductor.

cond-mat.supr-con↗

A topological Dirac insulator in a quantum spin Hall phase (experimental realization of a 3D Topological Insulator)

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the extreme quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi{1-x}Sbx single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic spin-textured surface states that are higher dimensional analogues of the edge states that characterize a quantum spin Hall insulator. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy, we report the direct observation of massive Dirac particles in the bulk of Bi0.9Sb0.1, locate the Kramers' points at the sample's boundary and provide a comprehensive mapping of the topological Dirac insulator's gapless surface modes. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the much sought exotic "topological metal". They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate "light-like" bulk carriers and topologically protected spin-textured edge-surface currents. This work is a detailed version of [Hsieh et.al., NATURE 452, 970 (2008), {Submitted in November 2007}].

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Observation of topologically protected Dirac spin-textures and πBerry's phase in pure Antimony (Sb) and topological insulator BiSb

A topologically ordered material is characterized by a rare quantum organization of electrons that evades the conventional spontaneously broken symmetry based classification of condensed matter. Exotic spin transport phenomena such as the dissipationless quantum spin Hall effect have been speculated to originate from a novel topological order whose identification requires a spin sensitive measurement. Using Spin-resolved-ARPES, we probe the spin degrees of freedom and demonstrate that topological quantum numbers are uniquely determined from spin-texture Berry Phase imaging measurements. Applying this method to pure antimony (Sb) and Bi-Sb, we identify the origin of its novel Topological Order and the negative value of the mirror Chern number. These results taken together constitute the first observation of surface electrons collectively carrying a topological Berry's phase and definite mirror Chern chirality in pure Antimony (Sb) which are the key electronic properties for realizing topological quantum computing via the interface Majorana fermion framework. This paper contains the details of the above mentioned previously reported (Science \textbf{323}, 919 (2009)) results.

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Time-reversal-protected single-Dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3: Topologically Spin-polarized Dirac fermions with pi Berry's Phase

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 (first non-Bi topological insulator) and their derivatives belong to the Z2 (Time-Reversal-Protected, elastic backscattering suppressed) topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (about 150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of surface spin-only Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for exploring novel topological physics. We emphasize (theoretically and experimentally) that the Dirac node is well within the bulk-gap and not degenerate with the bulk valence band.

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Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface

Recent theories and experiments have suggested that strong spin-orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic entanglement effects. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe strongly interacting particles. It has been proposed that a topological insulator with a single spin-textured Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation. Here we present an angle-resolved photoemission spectroscopy study and first-principle theoretical calculation-predictions that reveal the first observation of such a topological state of matter featuring a single-surface-Dirac-cone realized in the naturally occurring Bi$_2$Se$_3$ class of materials. Our results, supported by our theoretical predictions and calculations, demonstrate that undoped compound of this class of materials can serve as the parent matrix compound for the long-sought topological device where in-plane surface carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

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Topological Surface States Protected From Backscattering by Chiral Spin Texture

Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless metallic boundary states, akin to the chiral edge modes in quantum Hall systems, but with unconventional spin textures. Recently, experiments and theoretical efforts have provided strong evidence for both two- and three-dimensional topological insulators and their novel edge and surface states in semiconductor quantum well structures and several Bi-based compounds. A key characteristic of these spin-textured boundary states is their insensitivity to spin-independent scattering, which protects them from backscattering and localization. These chiral states are potentially useful for spin-based electronics, in which long spin coherence is critical, and also for quantum computing applications, where topological protection can enable fault-tolerant information processing. Here we use a scanning tunneling microscope (STM) to visualize the gapless surface states of the three-dimensional topological insulator BiSb and to examine their scattering behavior from disorder caused by random alloying in this compound. Combining STM and angle-resolved photoemission spectroscopy, we show that despite strong atomic scale disorder, backscattering between states of opposite momentum and opposite spin is absent. Our observation of spin-selective scattering demonstrates that the chiral nature of these states protects the spin of the carriers; they therefore have the potential to be used for coherent spin transport in spintronic devices.

cond-mat.mtrl-sci↗

Topological Control: Systematic control of topological insulator Dirac fermion density on the surface of Bi2Te3

Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. The proposed applications of topological insulators in device geometries rely on the ability to tune the chemical potential on their surfaces in the vicinity of the Dirac node. Here, we demonstrate a suite of surface control methods based on a combination of photo-doping and molecular-doping to systematically tune the Dirac fermion density on the topological (111) surface of Bi2Te3. Their efficacy is demonstrated via direct electronic structure topology measurements using high resolution angle-resolved photoemission spectroscopy (ARPES). These results open up new opportunities for probing topological behavior of Dirac electrons on the Bi2Te3 surface. At least one of the methods demonstrated here can be successfully applied to other topological insulators such as the Bi{1-x}Sb{x}, Sb2Te3 and Bi2Se3 which will be shown elsewhere. More importantly, our methods of topological surface state manipulation demonstrated here are highly suitable for future spectroscopic studies of topological phenomena which will complement the transport results gained from the traditional electrical gating techniques.

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