arXiv subjects

M. Zielinski

Publications and source records attributed to M. Zielinski.

At least 19 recordsLinked to original sources

arXiv2026

High-temperature behavior of amorphous alumina coatings: Insights from in-situ nanoindentation and X-ray diffraction studies

Further development of nuclear power plant technology relies heavily on materials durability under operating conditions. Estimating the materials performance in the operando tests is crucial. In this paper, the mechanical behavior of thin amorphous nuclear-dedicated Al2O3 coatings deposited by pulsed laser deposition was investigated by nanoindentation over the temperature range of 25-650C. Experimental nanomechanical analysis was supported by MD simulations. The results indicate that the hardness of the amorphous coating experiences a gradual, constant decrease with temperature, while the Young modulus value remains constant in the whole temperature range. Observed phenomena confirm the increasing plasticity of the material and it is postulated to be related to the bond-switching mechanism that accelerates at high temperatures. The post-mortem transmission electron microscopy characterization confirmed that the loaded material was non-crystalline over the entire range of the indentation temperatures. The thermal stability of the structure was further studied in-situ up to 1050C by X-ray diffraction. The implemented methodology allowed us to follow the dynamic process of phase transitions occurring in the material above 650C. First, thermally activated crystallization was observed at 700C. Intermediate alumina phases were present up to 950C, while above this temperature, exclusively the thermodynamically stable alpha-Al2O3 was observed. The in-situ high-temperature characterization of the evolution of thin films boosts the understanding of the application limits of the coating systems at elevated temperatures. The added value is that the paper demonstrates the potential usefulness of combining high-temperature techniques to characterize the complete behavior of thin films at elevated temperatures.

cond-mat.mtrl-sci↗

arXiv2026

Proposal for the first measurement of antiproton polarization in proton-nucleus interactions

Spin dependent phenomena in inclusive hadron production have been extensively investigated, yet their microscopic origin and universality across different hadrons are still not fully understood. In particular, it is presently unknown whether antiprotons produced in unpolarized hadronic collisions can acquire a transverse polarization as a result of spin dependent $\bar{p}N$ interactions and nonperturbative hadronization mechanisms. Establishing the presence or absence of such an effect would provide new empirical constraints on the spin structure of the antinucleon-nucleon interaction, which is only weakly constrained by existing data. In this work, we investigate the experimental feasibility of a first dedicated measurement of the transverse polarization of antiprotons produced in proton-nucleus collisions. The polarization is accessed through the left-right asymmetry in elastic $\bar{p}p$ scattering in the Coulomb Nuclear Interference region. Based on detailed Monte Carlo simulations of the proposed experimental setup at the European Organization for Nuclear Research (CERN), we estimate the statistical sensitivity required to detect a certain degree of polarization.

hep-ex↗

arXiv2026

Search for the Axion-Like-Particles in the $\eta\to\pi^{+}\pi^{-}e^{+}e^{-}$ decay with HADES detector

The dark matter and existence of new particles are now a possible explanation of several physics phenomena which evade the predictions of the Standard Model. In this context Axion-Like-Particles (ALP) with masses in the MeV to GeV range with additional Peccei-Quinn breaking contribution, and which are coupled to the Standard Model have been postulated. To search for the existence of such new particles, we have launched dedicated analysis of a high statistics data sample collected by High-Acceptance Di-Electron Spectrometer (HADES) operating at GSI in Darmstadt. In particular, we study $\eta$ meson decays into $\pi^{+}\pi^{-}e^{+}e^{-}$, where hypothesized isoscalar gauge boson $a$ could be produced in the intermediate state $\eta\to\pi^{+}\pi^{-}a$ decaying predominantly to $e^{+}e^{-}$. In this report we describe the analysis strategy we applied to search for a resonant peak in the dilepton invariant mass spectrum $\eta\to\pi^{+}\pi^{-}a\to \pi^{+}\pi^{-}e^{+}e^{-}$ and present the method for event selection and particle identification.

hep-ex↗

arXiv2025

P371 Experiment at CERN -- quest for polarized antiprotons

Polarization effects in the production of antiprotons at the CERN PS beam line T11 at 3.5 GeV/c have been investigated within the P371 experiment. These effects, if found to be significant could provide a simple method to generate polarized antiproton beams with existing facilities. First precursor measurements were carried out by the P349 collaboration, though the available statistics were insufficient for a quantitative conclusion. With an upgraded detector setup and extended beam time, the experiment aims at determining whether a measurable degree of antiproton polarization exists.

hep-ex↗

arXiv2024

Size dependence of biexciton binding energy in strained ZnTe/(Zn,Mg)Te nanowire quantum dots

Nanowire quantum dots, i.e., heterostructures consisting of an axial insertion of low bandgap semiconductor within large band gap semiconductor nanowire, attract interest due to their emerging applications in the field of quantum communication technology. Here, we report on the fabrication of ZnTe/(Zn,Mg)Te nanowire quantum dots by molecular beam epitaxy and on a detailed investigation of the optical emission from individual structures by means of a combined study involving cathodoluminescence and micro-photoluminescence. A distinct dependence of the biexciton binding energy, defined as the spectral distance between the exciton and biexciton emission lines on the length of ZnTe axial insertions, is observed. With increasing dot length, not only does the biexciton binding energy value decrease distinctly, but also its character changes from binding to antibinding. The explanation of this effect relies on the appearance of a piezoelectric field along the nanowire axis, leading to a pronounced separation of electrons and holes. The change from a bound to an unbound character of biexciton energy can be well reproduced by theoretical calculations, which indicate an important contribution of excited hole states to this effect in the case of relatively large quantum dots.

cond-mat.mes-hall↗

arXiv2023

Microstructure and mechanical properties of mechanically-alloyed CoCrFeNi high-entropy alloys using low ball-to-powder ratio

High-entropy alloys are extensively studied due to their very promising properties. However manufacturing methods currently used to prepare HEAs are complicated, costly, and likely non-industrially scalable processes. This limits their evolution and poses questions regarding the material's applicability in the future. Considering the abovementioned point, we developed a novel methodology for efficient HEA production using a low ball-to-powder ratio (BPR). Using different milling times, we manufactured four HEA powder precursors using a BPR of 5:1, which were later sintered via the Spark Plasma Sintering technique and heat treated. Microstructural characterization was performed by optical microscopy, Scanning Electron Microscopy equipped with EDS and EBSD detectors, and X-ray diffraction. Mechanical properties were measured using nano and microhardness techniques. In this work, we follow the structural evolution of the material and connect it with the strengthening effect as a function of milling time. Furthermore, we discuss the impact of different sintering and annealing conditions, proving that HEAs characterized by high mechanical properties may be manufactured using low BPR.

cond-mat.mtrl-sci↗

arXiv2023

Investigation of the $\mathbf{Σ^{0}}$ Production Mechanism in p(3.5 GeV)+p Collisions

The production of $Σ^0$ hyperons in proton proton collisions at a beam kinetic energy of 3.5 GeV impinging on a liquid hydrogen target was investigated using data collected with the HADES setup. The total production cross section is found to be $\mathrm{σ(pK^{+}Σ^{0}) [μb] = 17.7 \pm 1.7 (stat) \pm 1.6 (syst)}$. Differential cross section distributions of the exclusive channel $\mathrm{pp \rightarrow pK^{+}Σ^{0}}$ were analyzed in the center-of-mass, Gottfried-Jackson and helicity reference frames for the first time at the excess energy of 556 MeV. The data support the interplay between pion and kaon exchange mechanisms and clearly demonstrate the contribution of interfering nucleon resonances decaying to $\mathrm{K^{+}Σ^{0}}$. The Bonn-Gatchina partial wave analysis was employed to analyse the data. Due to the limited statistics, it was not possible to obtain an unambiguous determination of the relative contribution of intermediate nucleon resonances to the final state. However nucleon resonances with masses around 1.710 $\mathrm{GeV/c^{2}}$ ($\mathrm{N^{*}(1710)}$) and 1.900 $\mathrm{GeV/c^{2}}$ ($\mathrm{N^{*}(1900)}$ or $\mathrm{Δ^{*}(1900)}$) are preferred by the fit.

nucl-ex↗

arXiv2020

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed that the extrinsic premature BD is correlated to the presence of peculiar extended defects, the anti-phase boundaries (APBs), in the 3C-SiC layer. SCM analyses showed a larger carrier density at the stacking faults (SFs) the 3C-SiC, that can be explained by a locally enhanced density of states in the conduction band. On the other hand, a local increase of minority carriers concentration was deduced for APBs, indicating that they behave as conducting defects having also the possibility to trap positive charges. The results were explained with the local electric field enhancement in correspondence of positively charged defects.

physics.app-ph↗

arXiv2020

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization of Schottky contacts on 3C-SiC/Si was carried out, to elucidate the impact of the anti-phase-boundaries (APBs) and stacking-faults (SFs) on the forward and reverse current-voltage characteristics of these devices. Current mapping of 3C-SiC by conductive atomic force microscopy (CAFM) directly showed the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs were shown to work as preferential current paths under forward polarization. Distinct differences between these two kinds of defects were also confirmed by electronic transport simulations of a front-to-back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi-vertical devices based on 3C-SiC/Si, and can serve as a guide for improving material quality by defects engineering.

physics.app-ph↗

arXiv2020

3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer

Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In the present lecture, we discuss the use of a buffer layer between the epitaxial layer and the substrate in order to reduce the defectiveness and improve the overall quality of the SiC epi-film. In particular, we find that the morphology and the quality of the epi-film depends on the carbonization temperature and the concentration of Ge in close proximity of the Si1-xGex/SiC interface. Ge segregation at the interface influences the film quality, and in particular a [Ge]>12% in close proximity to the interface leads to the formation of poly-crystalls, while close to 10% induces a mirror like morphology. Moreover, by finely tuning the Ge concentration and carbonization temperature, crystal quality higher than that observed for SiC grown on bare silicon is achieved.

physics.app-ph↗

arXiv2017

Analysis procedure of the positronium lifetime spectra for the J-PET detector

Positron Annihilation Lifetime Spectroscopy (PALS) has shown to be a powerful tool to study the nanostructures of porous materials. Positron Emissions Tomography (PET) are devices allowing imaging of metabolic processes e.g. in human bodies. A newly developed device, the J-PET (Jagiellonian PET), will allow PALS in addition to imaging, thus combining both analyses providing new methods for physics and medicine. In this contribution we present a computer program that is compatible with the J-PET software. We compare its performance with the standard program LT 9.0 by using PALS data from hexane measurements at different temperatures. Our program is based on an iterative procedure, and our fits prove that it performs as good as LT 9.0.

physics.ins-det↗

arXiv2017

Time calibration of the J-PET detector

The Jagiellonian Positron Emission Tomograph (J-PET) project carried out in the Institute of Physics of the Jagiellonian University is focused on construction and tests of the first prototype of PET scanner for medical diagnostic which allows for the simultaneous 3D imaging of the whole human body using organic scintillators. The J-PET prototype consists of 192 scintillator strips forming three cylindrical layers which are optimized for the detection of photons from the electron-positron annihilation with high time- and high angular-resolutions. In this article we present time calibration and synchronization of the whole J-PET detection system by irradiating each single detection module with a 22Na source and a small detector providing common reference time for synchronization of all the modules.

physics.ins-det↗

arXiv2016

Determination of the analysing power for the $\vec{p}p \rightarrow ppη$ reaction using WASA-at-COSY detector system

We report on the measurement of the analyzing power for the (vec)pp->ppeta reaction with beam momenta of 2026 MeV/c and 2188 MeV/c performed with the WASA-at-COSY detector at the Cooler Synchrotron COSY. The eta meson from the (vec)pp-> ppeta reaction was identified by the techniques of missing mass and invariant mass. The angular distribution of the determined analyzing power strongly disagree with theoretical predictions. A comparison of the obtained Ay angular distribution with a series of associated Legendre polynomials revealed negligible contribution of the Sd partial wave at Q = 15 MeV. However, at Q = 72 MeV, a significant interference of the Ps and Pp partial waves was observed.

nucl-ex↗

arXiv2016

Overview of the software architecture and data flow for the J-PET tomography device

Modern TOF-PET scanner systems require high-speed computing resources for efficient data processing, monitoring and image reconstruction. In this article we present the data flow and software architecture for the novel TOF-PET scanner developed by the J-PET collaboration. We discuss the data acquisition system, reconstruction framework and image reconstruction software. Also, the concept of computing outside hospitals in the remote centers such as Świerk Computing Centre in Poland is presented.

physics.ins-det↗

arXiv2016

The Optical Activity of the Dark Exciton

We present a phenomenological model to consider the effect of shape symmetry breaking on the optical properties of self-assembled quantum dots. We compare between quantum dots with two-fold rotational and two reflections ($C_{2v}$) symmetry and quantum dots in which this symmetry is reduced by perturbation to one reflection only ($C_{s}$). We show that this symmetry reduction drastically affects the optical activity of the dark exciton. In symmetric quantum dots, one of the dark exciton eigenstate is totally dark and the other, due to heavy- and light-hole mixing, has a small dipole moment polarized along the symmetry axis (growth direction) of the quantum dot. In non-symmetric quantum dots, the two dark excitons' eigenstates are mixed with the bright excitons' eigenstates which have cross-linearly polarized perpendicular to the growth direction dipole moments. As a result of this mixing one of the dark exciton eigenstate is dark while the other one does have dipole moment which is linearly polarized normal to the growth direction, like the lower energy bright exciton eigenstate. Our model agrees well with recently obtained experimental data.

cond-mat.mes-hall↗

arXiv2015

Application of the Compress Sensing Theory for Improvement of the TOF Resolution in a Novel J-PET Instrument

Nowadays, in Positron Emission Tomography (PET) systems, a Time of Flight information is used to improve the image reconstruction process. In Time of Flight PET (TOF-PET), fast detectors are able to measure the difference in the arrival time of the two gamma rays, with the precision enabling to shorten significantly a range along the line-of-response (LOR) where the annihilation occurred. In the new concept, called J-PET scanner, gamma rays are detected in plastic scintillators. In a single strip of J-PET system, time values are obtained by probing signals in the amplitude domain. Owing to Compress Sensing theory, information about the shape and amplitude of the signals is recovered. In this paper we demonstrate that based on the acquired signals parameters, a better signal normalization may be provided in order to improve the TOF resolution. The procedure was tested using large sample of data registered by a dedicated detection setup enabling sampling of signals with 50 ps intervals. Experimental setup provided irradiation of a chosen position in the plastic scintillator strip with annihilation gamma quanta.

physics.ins-det↗

arXiv2015

Deterministic Coherent Writing of a Long-Lived Semiconductor Spin Qubit Using One Ultrafast Optical Pulse

We use one single, few-picosecond-long, variably polarized laser pulse to deterministically write any selected spin state of a quantum dot confined dark exciton whose life and coherence time are six and five orders of magnitude longer than the laser pulse duration, respectively. The pulse is tuned to an absorption resonance of an excited dark exciton state, which acquires non-negligible oscillator strength due to residual mixing with bright exciton states. We obtain a high fidelity one-to-one mapping from any point on the Poincaré sphere of the pulse polarization to a corresponding point on the Bloch sphere of the spin of the deterministically photogenerated dark exciton.

quant-ph↗

arXiv2015

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.

cond-mat.mes-hall↗