arXiv subjects

Maddison Coke

Publications and source records attributed to Maddison Coke.

6 recordsLinked to original sources

arXiv2026

Thermal Stability and Carrier Recombination Kinetics in InGaN/GaN Multiple Quantum Wells under High-Temperature Annealing

The thermal stability and carrier recombination kinetics of an as-received InGaN/GaN multiple quantum well (MQW) structure, capped with a protective AlN thin film, are studied following a series of thermal annealings at temperatures between 500 deg C and 1100 deg C. Under 325 nm focused laser excitation at room temperature, the sample's photoluminescence (PL) spectrum exhibits three emission bands: an ultraviolet peak at 363 nm, a blue peak at 455 nm, and a yellow peak at 565 nm. We find that the MQW's 455 nm emission is preserved after annealing at 1100 deg C. Moreover, room-temperature PL excitation (PLE) and time-resolved PL (TRPL) have been investigated to shed light on the sample's energy-transfer mechanisms and emission decay characteristics. Power-dependent PL spectra analysis shows that the carrier recombination mechanism of the MQW's emission has not been affected by thermal treatment. Rate equation modelling and chromaticity coordinate analysis also show limited thermal impact on the calculated equivalent emission lifetime and emissive colour. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis has been performed, further evidencing the preservation of the MQW structure in the annealed sample.

physics.app-ph↗

arXiv2025

Deterministic Detection of Single Ion Implantation

Single ion implantation using focused ion beam systems enables high spatial resolution and maskless doping for rapid and scalable engineering of materials for quantum technologies, particularly qubits and colour centres in solid-state hosts. In such applications, the confidence with which a single ion can be deterministically implanted is crucial, and so the efficiency of the detection mechanism is a vital parameter. Here, we present a study of the single-ion detection efficiency for a variety of ion species (Si, P, Mn, Co, Ge, Sb, Au and Bi) into various hosts (Si, SiO2, Al2O3, GaAs, diamond and SiC). The effect of varying ion mass, charge and kinetic energy are studied, in addition to the cluster implantation of Sb, Au and Bi. We demonstrate that it is possible to achieve detection efficiencies >90% for a wide range of ion species and substrate combination through selection of the implantation parameters. Furthermore, detection efficiencies of 100% are found for the doping of Sb clusters which is of direct relevance for the future fabrication of quantum devices.

cond-mat.mtrl-sci↗

arXiv2025

Shallow Au Implantation Into Silicon-On-Insulator Slot Ring Resonator Waveguide Devices

The optical transmission spectra of a series of micro-ring resonators (MRRs) are studied following the implantation of gold (Au) ions and subsequent thermal annealing, at temperatures between 500 {\deg}C and 700 {\deg}C. Whilst we find that this process leads to the ready formation of Au nanoparticles (NPs) on the MRR surface, the cavity optical properties; Q-factor and extinction ratio (ER) are severely degraded, for annealing between 500 {\deg}C and 600 {\deg}C, but recover again for annealing at 650 {\deg}C. For an equivalent (control) MRR, which received no Au implantation, thermal annealing alone was also found to degrade the cavity performance.

physics.optics↗

arXiv2025

Isotopically Selected Single Antimony Molecule Doping

A reliable route to the deterministic fabrication of impurity ion donors in silicon is required to advance quantum computing architectures based upon such systems. This paper reports the ability to dope isotopically-defined unique (${}^{121}\mathrm{Sb}{}^{123}\mathrm{Sb}$) clusters into silicon with measured detection efficiencies of 94% being obtained. Atomically resolved imaging of the doped clusters reveals a Sb-to-Sb separation of ~2 nm post-implantation, thus indicating suitability to form coupled qudit systems. The method used is fully compatible with integration into processing that includes pre-enrichment of the silicon host to < 3ppm ${}^{29}\mathrm{Si}$ levels. As such, we present a potential pathway to the creation of scaled qudit arrays within silicon platforms for quantum computing.

cond-mat.mtrl-sci↗

arXiv2024

Laser Activation of Single Group-IV Colour Centres in Diamond

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV- centres. The technique opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV- centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

quant-ph↗

arXiv2023

Highly ${ }^{28} \mathrm{Si}$ Enriched Silicon by Localised Focused Ion Beam Implantation

Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope ${ }^{29} \mathrm{Si}$ which has a non-zero nuclear spin. This work presents a method for the depletion of ${ }^{29} \mathrm{Si}$ in localised volumes of natural silicon wafers by irradiation using a 45 keV ${ }^{28} \mathrm{Si}$ focused ion beam with fluences above $1 \times 10^{19} \, \mathrm{ions} \, \mathrm{cm}^{-2}$. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows unprecedented quality enriched silicon that reaches a minimal residual ${ }^{29} \mathrm{Si}$ value of 2.3 $\pm$ 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. Transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth upon annealing. The ease of fabrication, requiring only commercially available natural silicon wafers and ion sources, opens the possibility for co-integration of qubits in localised highly enriched volumes with control circuitry in the surrounding natural silicon for large-scale devices.

cond-mat.mtrl-sci↗