arXiv subjects

Mahdi Jamali

Publications and source records attributed to Mahdi Jamali.

18 recordsLinked to original sources

arXiv2021

Determination of spin-orbit torques by thickness-dependent spin-orbit torque FMR measurement

Current induced spin-orbit torques (SOTs) in Fe/Pt bilayers have been investigated utilizing the spin-orbit torque ferromagnetic resonance (SOT-FMR) measurement. Characterization of thin films with different thicknesses indicates existence of a sizable field-like spin-orbit torque competing with the Oersted field induced torque (Oersted torque). The field-like torque is neglected in the standard SOT-FMR method and the presence of a strong field-like torque makes estimation of the spin Hall angle (SHA) problematic. Also, it is challenging to differentiate the field-like torque from the Oersted torque in a radiofrequency measurement. Based on the thickness dependence of field-like torque, anti-damping torque, and Oersted torque, the thickness-dependent SOT-FMR measurement is proposed as a more reliable, self-calibrated approach for characterization of spin-orbit torques.

physics.app-ph↗

arXiv2017

External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure

Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic field, which hampers its practical applications. Here, we introduce a novel approach for external-field-free spin Hall switching of a perpendicular nanomagnet by utilizing a local dipolar field arising from an adjacent in-plane magnetic layer. Robust switching of perpendicular CoFeB nanopillars in a dipole-coupled composite stack is experimentally demonstrated in the absence of any external magnetic field, in consistent with the results of micromagnetic simulation. Large in-plane compensation field of about 135 Oe and out-of-plane loop shift of about 45 Oe / 10 7 A cm-2 are obtained in the nanopillar devices with composite structure. By performing micromagnetic simulations, we confirm the composite external-field-free switching strategy can also work for a 10 x 10 nm2 circular pillar. Compared with other proposed methods for external-field-free spin Hall switching of perpendicular magnetization, the dipole-coupled composite structure is compatible with a wide range of spin Hall systems and perpendicular magnetic tunnel junctions, paving the way towards practical SHE-based MRAM and logic applications.

cond-mat.mtrl-sci↗

arXiv2017

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

arXiv2017

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and (at low temperature) in magnetically doped topological insulator heterostructures. We report the observation of unidirectional spin Hall magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure-of-merit (magnetoresistance per current density per total resistance) that is comparable to the highest reported values in all-metal Ta/Co bilayers.

cond-mat.mes-hall↗

arXiv2016

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

cond-mat.mes-hall↗

arXiv2015

Evaluation of Spin Waves and Ferromagnetic Resonance Contribution to the Spin Pumping in Ta/CoFeB Structure

The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a microwave generator. Using a narrow waveguide of about 3 μm, magnetostatic surface spin waves with large wavevector (k) of about 0.81 μm^-1 are excited. A large k value results in dissociation of spin waves and FMR frequencies according to the surface spin wave dispersion relation. Spin waves and FMR contribution to the spin pumping are calculated based on the area under the Lorentzian curve fitting over experimental results. It is found that the FMR over spin waves contribution is about 1 at large bias fields in Ta/CoFeB structure. Based on our spin pumping results, we propose a method to characterize the spin wave decay constant which is found to be about 5.5 μm in the Ta/CoFeB structure at a bias field of 600 Oe.

cond-mat.mes-hall↗

arXiv2015

Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy

Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses. It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spin Hall angle of about 0.12 is obtained. The field-like torque related with Rashba effect is negligible in this structure suggesting that the interface play a significant role in Rashba-like torque.

cond-mat.mes-hall↗

arXiv2014

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

cond-mat.mes-hall↗

arXiv2013

Spin-orbit torques in Co/Pd multilayer nanowires

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (field-like) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 kOe and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (~ 1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

cond-mat.mtrl-sci↗

arXiv2013

Spin wave nonreciprocity for logic device applications

The utilization of spin waves as eigenmodes of the magnetization dynamics for information processing and communication has been widely explored recently due to its high operational speed with low power consumption and possible applications for quantum computations. Previous proposals of spin wave Mach-Zehnder devices were based on the spin wave phase, a delicate entity which can be easily disrupted. Here, we propose a complete logic system based on the spin wave amplitude utilizing the nonreciprocal spin wave behavior excited by microstrip antennas. The experimental data reveal that the nonreciprocity of magnetostatic surface spin wave can be tuned by the bias magnetic field. Furthermore, engineering of the device structure could result in a high nonreciprocity factor for spin wave logic applications.

cond-mat.mtrl-sci↗

arXiv2012

Detection of domain wall eigenfrequency in infinity-shaped magnetic nanostructures

The dynamics of a magnetic infinity-shaped nanostructure has been experimentally studied by two different techniques such as the sinusoidal resonance excitation and the damped short pulse excitation to measure the eigenfrequency of domain walls. Direct observation of the magnetic domain wall nucleation has been measured in the frequency domain. Electrical measurements of the domain wall dynamics in the frequency domain reveal the existence of multi-eigenmodes for large excitation amplitudes. The time-resolved measurements show that the frequency of the damped gyration is similar to that of the frequency domain and coexistence of spin wave excitations.

cond-mat.mtrl-sci↗

arXiv2012

Observation of magnetocapacitance in ferromagnetic nanowires

The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching fields in the capacitance measurements match with that of the magnetoresistance measurements in the opposite sense. The origin of the magnetocapacitance has been attributed to magnetoresistance. This magnetocapacitance detection technique can be useful for magnetic domain wall studies.

cond-mat.mtrl-sci↗

arXiv2012

Spin waves interference from rising and falling edges of electrical pulses

The authors have investigated the effect of the electrical pulse width of input excitations on the generated spin waves in a NiFe strip using pulse inductive time domain measurements. The authors have shown that the spin waves resulting from the rising- and the falling-edges of input excitation pulses interfere either constructively or destructively, and have provided conditions for obtaining spin wave packets with maximum intensity at different bias conditions.

cond-mat.mtrl-sci↗

arXiv2012

Interference-mediated intensity modulation of spin waves

The modulation of propagating spin-wave amplitude in Ni81Fe19 (Py) films, resulting from constructive and destructive interference of spin wave, has been demonstrated. Spin waves were excited and detected inductively using pulse inductive time domain measurements. Two electrical impulses were used for launching two interfering Gaussian spin wave packets in Py films. The applied bias magnetic field or the separation between two pulses was used for tuning the amplitude of the resulting spin wave packets. This may thus be useful for spin wave based low-power information transfer and processing.

cond-mat.mtrl-sci↗

arXiv2011

Metastable magnetic domain wall dynamics

The dynamics of metastable magnetic domain walls in straight ferromagnetic nanowires under spin waves, external magnetic fields, and current induced spin transfer torque are studied by micromagnetic simulations. It is found that in contrast to a stable wall, it is possible to displace a metastable domain wall in the absence of any external excitation. In addition, independent of the domain wall excitation method, the velocity of a metastable wall is much smaller than a stable wall and their displacement direction could be different from the stable wall depending on the structure of metastable walls. Under the current induced spin transfer torque excitation, the direction of domain wall displacement is directly related to the intensity of nonadiabatic spin transfer torque. In a rough nanowire, it is found that the displacement of a metastable wall could happen much below the critical excitation of a stable wall. Furthermore, we show that it is possible to have either a forward or backward displacement of a metastable domain wall by changing the pulse width of the excitation.

cond-mat.mtrl-sci↗

arXiv2011

Electrical measurement of antivortex wall eigenfrequency

The dynamics of a ferromagnetic antivortex wall has been experimentally studied in a magnetic nanostructure. Two different techniques have been used to independently measure the eigenfrequency of an antivortex wall such as the resonance excitation by sinusoidal microwave and the damped resonance excitation induced by short voltage pulses. Direct observation of antivortex wall nucleation has been measured in the frequency domain for the first time. Electrical measurements of the antivortex dynamics in frequency domain reveal the existence of multi-eigenmodes as well as nonlinear behaviors for large excitation amplitudes. The time resolved measurements of the antivortex wall show that the frequency of the damped gyration is similar to that of frequency domain and coexistence of spin wave excitations.

cond-mat.mtrl-sci↗

arXiv2011

Spin wave assisted current induced magnetic domain wall motion

The interaction between the propagating spin waves and the current driven motion of a transverse domain wall in magnetic nanowires is studied by micromagnetic simulations. If the speed of domain walls due to current induced spin transfer torque is comparable to the velocity driven by spin waves, the speed of domain wall is improved by applying spin waves. The domain wall velocity can be manipulated by the frequency and amplitude of spin waves. The effect of spin waves is suppressed in the high current density regime in which the domain wall is mostly driven by current induced spin transfer torque.

cond-mat.mtrl-sci↗

arXiv2011

Effect of nonadiabatic spin transfer torque on domain wall resonance frequency and mass

The dynamics of a magnetic domain wall in a semi circular nanowire loop is studied by an analytical model and micromagnetic simulations. We find a damped sinusoidal oscillation of the domain wall for small displacement angles around its equilibrium position under an external magnetic field in the absence of currents. By studying the effect of current induced nonadiabatic spin transfer torque on the magnetic domain wall resonance frequency and mass, a red shift is found in the resonance frequency and domain wall mass increases by increasing the ratio of nonadiabatic spin torque to adiabatic contribution above 1.

cond-mat.mtrl-sci↗