arXiv subjects

Marc Hauser

Publications and source records attributed to Marc Hauser.

6 recordsLinked to original sources

arXiv2026

Fast Timing and TCT Measurement Results of CNM Double-Sided 3D Sensors

Sensors with fast timing capabilities (on the order of tens of picoseconds) are a critical component of future HEP tracking detectors, providing the ability to disentangle high multiplicity events. Silicon 3D sensors are capable of delivering this temporal resolution and additionally display an excellent radiation hardness, suitable for the harsh environments expected in future hadron colliders (e.g. FCC-hh). In the course of the RD50 project "3D detectors optimized for timing applications", double-sided 3D sensors with two different column layouts, hexagonal and orthogonal, and different column counts were designed and produced by CNM. In this study, results of IV, top-TCT and source timing measurements of unirradiated as well as proton irradiated sensor structures are presented. The IV characterisation shows a strong decrease of the overall high leakage current of the sensors after irradiation. Top-TCT measurements with both an infrared and red laser reveal a mostly homogenous charge collection in the sensor bulk, while higher signals are observed in the outermost columns for surface charge injection. The time resolution of sensors irradiated up to a $1 \, \mathrm{MeV}$ neutron equivalent fluence of $3\times10^{15} \, \mathrm{cm^{-2}}$ reaches down to ca. $65\,\mathrm{ps}$, showing only a slight degradation compared to unirradiated sensors.

physics.ins-det↗

arXiv2026

Characterization of Passive CMOS Strip Detectors After Proton Irradiation

Strip detectors are populating outer trackers of high-energy particle experiments. They are convenient for covering large areas of sensitive material since they use less power and have fewer readout channels compared to pixels sensors. Nevertheless, they are typically manufactured with a mask set that covers the full wafer, otherwise when using smaller reticles the strip implants have to be stitched. For this project, strip detectors were fabricated in a CMOS commercial foundry using different reticles to be stitched several times, proving the feasibility of this technology. LFoundry produced the passive CMOS strip detector with a production line of 150 nm node technology, using a 150 um thick FZ wafer. Those strip sensors have three different geometries to study different impacts of the CMOS technology. The strips have lengths of 2.1 cm and 4.1 cm, stitching 3 or 5 reticles respectively. This work shows results of 24 GeV proton irradiated passive CMOS strip detectors. The detectors were irradiated at CERN and were tested with different set-ups, not showing any effect from the strips stitching. Proving that this technology is feasible for detecting high-energy particles opens the door to future large productions of passive strip detectors and also to produce active strip sensors in commercial CMOS foundries.

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arXiv2024

TCAD Simulation of Stitching for Passive CMOS Strip Detectors

Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and they can take advantage of the silicon electronics foundries developments and production lines. Strip detectors are very useful to cover large areas for tracking purposes, while consuming less power per area compared to pixel sensors. The majority of particle physics experiments use conventional silicon strip detectors fabricated in foundries that do not use stitching, relying on a very small number of foundries worldwide that can provide large amounts of strip detectors. Fabricating strip detectors in a CMOS foundry opens the possibility to use more foundries and to include active elements in the strips for future productions. For the passive CMOS strip detectors project we fabricated strip detectors in a CMOS foundry using two 1 cm2 reticles that are stitched together along the wafer. The fabricated strips stitched the reticles three and five times, and it was shown that the performance of those strips is not affected by the stitching. This paper shows 3D TCAD simulations of the stitching area to investigate the possible effects stitching can have on the performance of the strip detectors, considering different stitching mismatches. We will show that the mismatch of stitched structures up to 1 um does not impact the performance with TCAD simulations which agrees with the results obtained from the measurements.

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arXiv2024

Characterisation and simulation of stitched CMOS strip sensors

In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.

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arXiv2022

Characterization of Passive CMOS Strip Sensors

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.

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arXiv2020

The ABC130 barrel module prototyping programme for the ATLAS strip tracker

For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.

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