arXiv subjects

Marcelo Davanco

Publications and source records attributed to Marcelo Davanco.

At least 19 recordsLinked to original sources

arXiv2026

Automated Vector-Scanning Spectroscopy for Large-Scale Characterization of Single Quantum Emitters

The inherent spatial randomness and broad spectral heterogeneity of epitaxial quantum dots (QDs) -- one of the most mature classes of solid-state quantum emitters -- remains a major obstacle to their scalable deployment in integrated photonic quantum technologies. Overcoming this challenge requires deterministic fabrication strategies capable of precisely aligning nanophotonic structures with high-quality emitters, which in turn demands efficient and automated single-QD characterization. Despite substantial progress in optical measurement techniques, a platform capable of autonomous, data-efficient, and sufficiently versatile characterization of single quantum dots at the chip scale remains lacking. Here, we introduce an automated cryogenic measurement platform that combines wide-field photoluminescence imaging with vector-stage-scanning confocal spectroscopy to enable high-throughput, chip-scale targeted optical characterization of individual QDs. Using this platform, we automatically acquire photoluminescence data from thousands of GaAs/AlGaAs QDs on a single chip. We demonstrate how this extensive dataset enables identification of high-performance emitters for future deterministic device fabrication, while simultaneously revealing statistical trends across the QD ensemble. By uniting data-efficient targeted measurements with scalable automation, our platform establishes a foundation for large-scale quantum photonic integration and the high throughput characterization framework needed to accelerate materials optimization.

physics.optics↗

arXiv2025

Multimode Nanobeam Photonic Crystal Cavities for Purcell Enhanced Quantum Dot Emission

Epitaxial III-V semiconductor quantum dots in nanopthonic structures are promising candidates for implementing on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. Quantum dot proximity to the etched sidewalls of hosting nanophotonic structures, however, has been shown to induce linewidth broadening of excitonic transitions, which limits emitted single-photon indistinguishability. Here, we design and demonstrate GaAs photonic crystal nanobeam cavities that maximize quantum dot distances to etched sidewalls beyond an empirically determined minimum that curtails spectral broadening. Although such geometric constraint necessarily leads to multimode propagation in nanobeams, which significantly complicates high quality factor cavity design, we achieve resonances with quality factors $Q\approx10^3$, which offer the potential for achieving Purcell radiative rate enhancements $F_p\approx100$.

physics.optics↗

arXiv2023

Band flipping and bandgap closing in a photonic crystal ring and its applications

The size of the bandgap in a photonic crystal ring is typically intuitively considered to monotonically grow as the modulation amplitude of the grating increases, causing increasingly large frequency splittings between the 'dielectric' and 'air' bands. In contrast, here we report that as the modulation amplitude in a photonic crystal ring increases, the bandgap does not simply increase monotonically. Instead, after the initial increase, the bandgap closes and then reopens again with the dielectric band and the air bands flipped in energy. The air and dielectric band edges are degenerate at the bandgap closing point. We demonstrate this behavior experimentally in silicon nitride photonic crystal microrings, where we show that the bandgap is closed to within the linewidth of the optical cavity mode, whose quality factor remains unperturbed with a value $\approx$ 1$\times$10$^6$ (i.e., linewidth of 2 pm). Moreover, through finite-element simulations, we show that such bandgap closing and band flipping phenomena exist in a variety of photonic crystal rings with varying units cell geometries and cladding layers. At the bandgap closing point, the two standing wave modes with a degenerate frequency are particularly promising for single-frequency lasing applications. Along this line, we propose a compact self-injection locking scheme that integrates many core functionalities in one photonic crystal ring. Additionally, the single-frequency lasing might be applicable to DFB lasers to increase their manufacturing yield.

physics.optics↗

arXiv2023

Multi-mode microcavity frequency engineering through a shifted grating in a photonic crystal ring

Frequency engineering of whispering-gallery resonances is essential in microcavity nonlinear optics. The key is to control the frequencies of the cavity modes involved in the underlying nonlinear optical process to satisfy its energy conservation criterion. Compared to the conventional method that tailors dispersion by the cross-sectional geometry, thereby impacting all cavity mode frequencies, grating-assisted microring cavities, often termed as photonic crystal microrings, provide more enabling capabilities through mode-selective frequency control. For example, a simple single period grating added to a microring has been used for single-frequency engineering in Kerr optical parametric oscillation (OPO) and frequency combs. Recently, this approach has been extended to multi-frequency engineering by using multi-period grating functions, but at the cost of increasingly complex grating profiles that require challenging fabrication. Here, we demonstrate a simple approach, which we term as shifted grating multiple mode splitting (SGMMS), where spatial displacement of a single period grating imprinted on the inner boundary of the microring creates a rotational asymmetry that frequency splits multiple adjacent cavity modes. This approach is easy to implement and presents no additional fabrication challenges than an un-shifted grating, and yet is very powerful in providing multi-frequency engineering functionality for nonlinear optics. We showcase an example where SGMMS enables OPO generation across a wide range of pump wavelengths in a normal-dispersion device that otherwise would not support OPO.

physics.optics↗

arXiv2023

Direct-Laser-Written Polymer Nanowire Waveguides for Broadband Single Photon Collection from Epitaxial Quantum Dots into a Gaussian-like Mode

Single epitaxial quantum dots (QDs) embedded in nanophotonic geometries are a leading technology for quantum light generation. However, efficiently coupling their emission into a single mode fiber or Gaussian beam often remains challenging. Here, we use direct laser writing (DLW) to address this challenge by fabricating 1 $\mu$m diameter polymer nanowires (PNWs) in-contact-with and perpendicular-to a QD-containing GaAs layer. QD emission is coupled to the PNW's HE$_{11}$ waveguide mode, enhancing collection efficiency into a single-mode fiber. PNW fabrication does not alter the QD device layer, making PNWs well-suited for augmenting preexisting in-plane geometries. We study standalone PNWs and PNWs in conjunction with metallic nanoring devices that have been previously established for increasing extraction of QD emission. We report methods that mitigate standing wave reflections and heat, caused by GaAs's absorption/reflection of the lithography beam, which otherwise prevent PNW fabrication. We observe a factor of $(3.0 \pm 0.7)\times$ improvement in a nanoring system with a PNW compared to the same system without a PNW, in line with numerical results, highlighting the PNW's ability to waveguide QD emission and increase collection efficiency simultaneously. These results demonstrate new DLW functionality in service of quantum emitter photonics that maintains compatibility with existing top-down fabrication approaches.

physics.optics↗

arXiv2022

Rod and slit photonic crystal microrings for on-chip cavity quantum electrodynamics

Micro-/nanocavities that combine high quality factor ($Q$) and small mode volume ($V$) have been used to enhance light-matter interactions for cavity quantum electrodynamics (cQED). Whispering gallery mode (WGM) geometries such as microdisks and microrings support high-$Q$ and are design- and fabrication-friendly, but $V$ is often limited to tens of cubic wavelengths to avoid WGM radiation. The stronger modal confinement provided by either one-dimensional or two-dimensional photonic crystal defect geometries can yield sub-cubic-wavelength $V$, yet the requirements on precise design and dimensional control are typically much more stringent to ensure high-$Q$. Given their complementary features, there has been sustained interest in geometries that combine the advantages of WGM and photonic crystal cavities. Recently, a `microgear' photonic crystal ring (MPhCR) has shown promise in enabling additional defect localization ($>$ 10$\times$ reduction of $V$) of a WGM, while maintaining high-$Q$ ($\approx10^6$) and other WGM characteristics in ease of coupling and design. However, the unit cell geometry used is unlike traditional PhC cavities, and etched surfaces may be too close to embedded quantum nodes (quantum dots, atomic defect spins, etc.) for cQED applications. Here, we report two novel PhCR designs with `rod' and `slit' unit cells, whose geometries are more traditional and suitable for solid-state cQED. Both rod and slit PhCRs have high-$Q$ ($>10^6$) with WGM coupling properties preserved. A further $\approx$~10$\times$ reduction of $V$ by defect localization is observed in rod PhCRs. Moreover, both fundamental and 2nd-order PhC modes co-exist in slit PhCRs with high $Q$s and good coupling. Our work showcases that high-$Q/V$ PhCRs are in general straightforward to design and fabricate and are a promising platform to explore for cQED.

physics.optics↗

arXiv2022

Kerr optical parametric oscillation in a photonic crystal microring for accessing the infrared

Continuous wave optical parametric oscillation (OPO) provides a flexible approach for accessing mid-infrared wavelengths between 2 $\mu$m to 5 $\mu$m, but has not yet been integrated into silicon nanophotonics. Typically, Kerr OPO uses a single transverse mode family for pump, signal, and idler modes, and relies on a delicate balance to achieve normal (but close-to-zero) dispersion near the pump and the requisite higher-order dispersion needed for phase- and frequency-matching. Within integrated photonics platforms, this approach results in two major problems. First, the dispersion is very sensitive to geometry, so that small fabrication errors can have a large impact. Second, the device is susceptible to competing nonlinear processes near the pump. In this letter, we propose a flexible solution to infrared OPO that addresses these two problems, by using a silicon nitride photonic crystal microring (PhCR). The frequency shifts created by the PhCR bandgap enable OPO that would otherwise be forbidden. We report an intrinsic optical quality factor up to (1.2 $\pm$ 0.1)$\times$10$^6$ in the 2 $\mu$m band, and use a PhCR ring to demonstrate an OPO with threshold power of (90 $\pm$ 20) mW dropped into the cavity, with the pump wavelength at 1998~nm, and the signal and idler wavelengths at 1937 nm and 2063 nm, respectively. We further discuss how to extend OPO spectral coverage in the mid-infrared. These results establish the PhCR OPO as a promising route for integrated laser sources in the infrared.

physics.optics↗

arXiv2022

Multi-objective Inverse Design of Solid-state Quantum Emitter Single-photon Sources

Single solid-state quantum emitters offer considerable potential for the implementation of sources of indistinguishable single-photons, which are central to many photonic quantum information systems. Nanophotonic geometry optimization with multiple performance metrics is imperative to convert a bare quantum emitter into a single-photon source that approaches the necessary levels of purity, indistinguishability, and brightness for quantum photonics. We present an inverse design methodology that simultaneously targets two important figures-of-merit for high-performance quantum light sources: the Purcell radiative rate enhancement and the coupling efficiency into a desired light collection channel. We explicitly address geometry-dependent power emission, a critical but often overlooked aspect of gradient-based optimization of quantum emitter single-photon sources. We illustrate the efficacy of our method through the design of a single-photon source based on a quantum emitter in a GaAs nanophotonic structure that provides a Purcell factor $F_p=21$ with a 94% waveguide coupling efficiency, while respecting a geometric constraint to minimize emitter decoherence by etched sidewalls. Our results indicate that multi-objective inverse design can yield competitive performance with more favorable trade-offs than conventional approaches based on pre-established waveguide or cavity geometries.

physics.optics↗

arXiv2022

Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$\mu$m x 80$\mu$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.

physics.app-ph↗

arXiv2022

Triggered single-photon generation and resonance fluorescence in ultra-low loss integrated photonic circuits

A central requirement for photonic quantum information processing systems lies in the combination of nonclassical light sources and low-loss, phase-stable optical modes. While substantial progress has been made separately towards ultra-low loss, $\leq1$ dB/m, chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report a significant advance towards this goal, in the hybrid integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic integrated circuit. We demonstrate triggered and pure single-photon emission directly into a Si$_3$N$_4$ photonic circuit with $\approx1$ dB/m propagation loss at a wavelength of $\approx920$ nm. These losses are more than two orders of magnitude lower than reported to date for any photonic circuit with on-chip quantum emitter sources, and $>50$ % lower than for any prior foundry-compatible integrated quantum photonic circuit, to the best of our knowledge. Using these circuits we report the observation of resonance fluorescence in the strong drive regime, a milestone towards integrated coherent control of quantum emitters. These results constitute an important step forward towards the creation of scaled chip-integrated photonic quantum information systems.

physics.optics↗

arXiv2021

Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector

To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications.

physics.optics↗

arXiv2021

Roadmap on Integrated Quantum Photonics

Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required functionality and performance, can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration and a dramatic reduction in optical losses have enabled benchtop experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. The reduction in size, weight, power, and improvement in stability that will be enabled by QPICs will play a key role in increasing the degree of complexity and scale in quantum demonstrations. In the next decade, with sustained research, development, and investment in the quantum photonic ecosystem (i.e. PIC-based platforms, devices and circuits, fabrication and integration processes, packaging, and testing and benchmarking), we will witness the transition from single- and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted, and utilized for quantum computing, communications, metrology, and sensing. This roadmap highlights the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges.

quant-ph↗

arXiv2020

Dissipative Kerr Solitons in a III-V Microresonator

We demonstrate stable microresonator Kerr soliton frequency combs in a III-V platform (AlGaAs on SiO$_2$) through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4~K and 20~K. This cooling reduces the resonator's thermorefractive coefficient, whose room-temperature value is an order of magnitude larger than that of other microcomb platforms like Si$_3$N$_4$, SiO$_2$, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase-stable soliton operation is critical for applications that fully exploit the ultra-high effective nonlinearity and high optical quality factors exhibited by this platform.

physics.optics↗

arXiv2019

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\textit{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si$_3$N$_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si$_3$N$_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

physics.app-ph↗

arXiv2017

Nanoscale mapping and spectroscopy of non-radiative hyperbolic modes in hexagonal boron nitride nanostructures

The inherent crystal anisotropy of hexagonal boron nitride (hBN) sustains naturally hyperbolic phonon polaritons, i.e. polaritons that can propagate with very large wavevectors within the material volume, thereby enabling optical confinement to exceedingly small dimensions. Indeed, previous research has shown that nanometer-scale truncated nanocone hBN cavities, with deep subwavelength dimensions, support three-dimensionally confined optical modes in the mid-infrared. Due to optical selection rules, only a few of many such modes predicted theoretically have been observed experimentally via far-field reflection and scattering-type scanning near-field optical microscopy. The Photothermal induced resonance (PTIR) technique probes optical and vibrational resonances overcoming weak far-field emission by leveraging an atomic force microscope (AFM) probe to transduce local sample expansion due to light absorption. Here we show that PTIR enables the direct observation of previously unobserved, dark hyperbolic modes of hBN nanostructures. Leveraging these optical modes could yield a new degree of control over the electromagnetic near-field concentration, polarization and angular momentum in nanophotonic applications.

cond-mat.mes-hall↗

arXiv2017

Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.

cond-mat.mes-hall↗

arXiv2017

Cascaded emission of single photons from the biexciton in monolayered WSe2

Monolayers of transition metal dichalcogenide materials emerged as a new material class to study excitonic effects in solid state, since they benefit from enormous coulomb correlations between electrons and holes. Especially in WSe2, sharp emission features have been observed at cryogenic temperatures, which act as single photon sources . Tight exciton localization has been assumed to induce an anharmonic excitation spectrum, however, the evidence of the hypothesis, namely the demonstration of a localized biexciton, is elusive. Here, we unambiguously demonstrate the existence of a localized biexciton in a monolayer of WSe2, which triggers an emission cascade of single photons. The biexciton is identified by its time-resolved photoluminescence, superlinearity and distinct polarization in micro-photoluminescence experiments. We evidence the cascaded nature of the emission process in a cross-correlation experiment, which yields a strong bunching behavior. Our work paves the way to a new generation of quantum optics experiments with two-dimensional semiconductors.

cond-mat.mtrl-sci↗

arXiv2016

Deterministic implementation of a bright, on-demand single photon source with near-unity indistinguishability via quantum dot imaging

Deterministic techniques enabling the implementation and engineering of bright and coherent solid-state quantum light sources are key for the reliable realization of a next generation of quantum devices. Such a technology, at best, should allow one to significantly scale up the number of implemented devices within a given processing time. In this work, we discuss a possible technology platform for such a scaling procedure, relying on the application of nanoscale quantum dot imaging to the pillar microcavity architecture, which promises to combine very high photon extraction efficiency and indistinguishability. We discuss the alignment technology in detail, and present the optical characterization of a selected device which features a strongly Purcell-enhanced emission output. This device, which yields an extraction efficiency of $η=(49\pm4)~\%$, facilitates the emission of photons with $(94\pm2.7)~\%$ indistinguishability.

physics.optics↗