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Marcelo Davanco

Publications and source records attributed to Marcelo Davanco.

At least 37 records · Page 2Linked to original sources

A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices

physics.optics↗

Imaging Nanophotonic Modes of Microresonators using a Focused Ion Beam

Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, and cavity optomechanics. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high quality factor resonances. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam. An ion beam (radius about 50 nm) induces a picometer-scale dynamic deformation of the resonator surface, which we detect through a shift in the optical resonance wavelength. We map five modes of a silicon microdisk resonator (Q > 20,000) with both high spatial and spectral resolution. Our technique also enables in-situ observation of ion implantation damage and relaxation dynamics in a silicon lattice.

physics.optics↗

Quantum Electromechanics on Silicon Nitride Nanomembranes

We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic patterning of a silicon nitride nanomembrane we are able to reliably realize planar capacitors with vacuum gap sizes down to $s \approx 80$nm. In combination with spiral inductor coils of micron pitch, this yields microwave ($\approx 8$GHz) resonant circuits of high impedance ($Z_{0} \approx 3.4$k$Ω$) suitable for efficient electromechanical coupling to nanoscale acoustic structures. We measure an electromechanical vacuum coupling rate of $g_{0}/2π= 41.5$~Hz to the low frequency ($4.48$MHz) global beam motion of a patterned phononic crystal nanobeam, and through parametric microwave driving reach a backaction cooled mechanical mode occupancy as low as $n_{m} = 0.58$.

cond-mat.mes-hall↗

Efficient and low-noise single-photon-level frequency conversion interfaces using silicon nanophotonics

Optical frequency conversion has applications ranging from tunable light sources to telecommunications-band interfaces for quantum information science. Here, we demonstrate efficient, low-noise frequency conversion on a nanophotonic chip through four-wave-mixing Bragg scattering in compact (footprint < 0.5 x 10^-4 cm^2) Si3N4 microring resonators. We investigate three frequency conversion configurations: (1) spectral translation over a few nanometers within the 980 nm band, (2) upconversion from 1550 nm to 980 nm, and (3) downconversion from 980 nm to 1550 nm. With conversion efficiencies ranging from 25 % for the first process to > 60 % for the last two processes, a signal conversion bandwidth > 1 GHz, < 60 mW of continuous-wave pump power needed, and background noise levels between a few fW and a few pW, these devices are suitable for quantum frequency conversion of single photon states from InAs quantum dots. Simulations based on coupled mode equations and the Lugiato-Lefever equation are used to model device performance, and show quantitative agreement with measurements.

physics.optics↗

Coherent coupling between radio frequency, optical, and acoustic waves in piezo-optomechanical circuits

The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency field through the piezo-electric effect, or optically through the strong photoelastic effect. We use this to demonstrate a novel acoustic wave interference effect, analogous to coherent population trapping in atomic systems, in which the coherent mechanical motion induced by the electrical drive can be completely cancelled out by the optically-driven motion. The ability to manipulate cavity optomechanical systems with equal facility through either photonic or phononic channels enables new device and system architectures for signal transduction between the optical, electrical, and mechanical domains.

physics.optics↗

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position uncertainty < 30 nm (< 10 nm when using a solid immersion lens), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).

cond-mat.mes-hall↗

Si$_3$N$_4$ nanobeam optomechanical crystals

The development of Si$_3$N$_4$ nanobeam optomechanical crystals is reviewed. These structures consist of a 350 nm thick, 700 nm wide doubly-clamped Si$_3$N$_4$ nanobeam that is periodically patterned with an array of air holes to which a defect region is introduced. The periodic patterning simultaneously creates a photonic bandgap for 980 nm band photons and a phononic bandgap for 4 GHz phonons, with the defect region serving to co-localize optical and mechanical modes within their respective bandgaps. These optical and mechanical modes interact dispersively with a coupling rate $g_{0}/2π\approx$100 kHz, which describes the shift in cavity mode optical frequency due to the zero-point motion of the mechanical mode. Optical sidebands generated by interaction with the mechanical mode lie outside of the optical cavity linewidth, enabling possible use of this system in applications requiring sideband-resolved operation. Along with a review of the basic device design, fabrication, and measurement procedures, we present new results on improved optical quality factors (up to $4\times10^5$) through optimized lithography, measurements of devices after HF acid surface treatment, and temperature dependent measurements of mechanical damping between 6~K and 300~K. A frequency-mechanical quality factor product $\left(f{\times}Q_m\right)$ as high as $\approx2.6\times10^{13}$ Hz is measured.

physics.optics↗

Integrated silicon optomechanical transducers and their application in atomic force microscopy

This chapter describes the basic design, simulation, and fabrication for fully Si integrated, waveguide coupled, optomechanical force and displacement sensors. The approach of full Si integration of all stationary nanophotonic components with mechanically separated movable components creates the opportunity to independently engineer these two parts for a variety of MEMS and NEMS sensing applications that require high precision, high bandwidth, and small footprint. Further integration of actuators for static and dynamic actuation is also possible.

cond-mat.mes-hall↗

Multiple time scale blinking in InAs quantum dot single-photon sources

We use photon correlation measurements to study blinking in single, epitaxially-grown self-assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The normalized second-order correlation function g(2)(τ) is studied across eleven orders of magnitude in time, and shows signatures of blinking over timescales ranging from tens of nanoseconds to tens of milliseconds. The g(2)(τ) data is fit to a multi-level system rate equation model that includes multiple non-radiating (dark) states, from which radiative quantum yields significantly less than 1 are obtained. This behavior is observed even in situations for which a direct histogramming analysis of the emission time-trace data produces inconclusive results.

physics.optics↗

Si$_3$N$_4$ optomechanical crystals in the resolved-sideband regime

We demonstrate sideband-resolved Si$_3$N$_4$ optomechanical crystals supporting $10^5$ quality factor optical modes at 980 nm, coupled to $\approx4$ GHz frequency mechanical modes with quality factors of $\approx3000$. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers of the order of $10^4$.

physics.optics↗

A chip-scale, telecommunications-band frequency conversion interface for quantum emitters

We describe a chip-scale, telecommunications-band frequency conversion interface designed for low-noise operation at wavelengths desirable for common single photon emitters. Four-wave mixing Bragg scattering in silicon nitride waveguides is used to demonstrate frequency upconversion and downconversion between the 980 nm and 1550 nm wavelength regions, with signal-to-background levels >10 and conversion efficiency of approximately -60 dB at low continuous wave input pump powers (<50 mW). Finite element simulations and the split-step Fourier method indicate that increased input powers of approximately 10 W (produced by amplified nanosecond pulses, for example) will result in a conversion efficiency >25 % in existing geometries. Finally, we present waveguide designs that can be used to connect shorter wavelength (637 nm to 852 nm) quantum emitters with 1550 nm.

quant-ph↗

Electromagnetically induced transparency and wide-band wavelength conversion in silicon nitride microdisk optomechanical resonators

We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor (Q) of 10^6, and radial breathing mechanical modes with a Q=10^4 and a resonance frequency of 625 MHz, so that the system is in the resolved sideband regime. Placing a strong optical control field on the red (blue) detuned sideband of the optical mode produces coherent interference with a resonant probe beam, inducing a transparency (absorption) window for the probe. This is observed for multiple optical modes of the device, all of which couple to the same mechanical mode, and which can be widely separated in wavelength due to the large bandgap of Si3N4. These properties are exploited to demonstrate frequency upconversion and downconversion of optical signals between the 1300 nm and 980 nm bands with a frequency span of 69.4 THz.

physics.optics↗

Slot-mode-coupled optomechanical crystals

We present a design methodology and analysis of a cavity optomechanical system in which a localized GHz frequency mechanical mode of a nanobeam resonator is evanescently coupled to a high quality factor (Q>10^6) optical mode of a separate nanobeam optical cavity. Using separate nanobeams provides flexibility, enabling the independent design and optimization of the optics and mechanics of the system. In addition, the small gap (approx. 25 nm) between the two resonators gives rise to a slot mode effect that enables a large zero-point optomechanical coupling strength to be achieved, with g/2pi > 300 kHz in a Si3N4 system at 980 nm and g/2pi approx. 900 kHz in a Si system at 1550 nm. The fact that large coupling strengths to GHz mechanical oscillators can be achieved in SiN is important, as this material has a broad optical transparency window, which allows operation throughout the visible and near-infrared. As an application of this platform, we consider wide-band optical frequency conversion between 1300 nm and 980 nm, using two optical nanobeam cavities coupled on either side to the breathing mode of a mechanical nanobeam resonator.

physics.optics↗

Low-noise on-chip frequency conversion by four-wave-mixing Bragg scattering in SiNx waveguides

Low-noise, tunable wavelength-conversion through non-degenerate four-wave mixing Bragg scattering in SiNx waveguides is experimentally demonstrated. Finite element method simulations of waveguide dispersion are used with the split-step Fourier method to predict device performance, and indicate a strong dependence of the conversion efficiency on phase matching, which is controlled by the waveguide geometry. Two 1550 nm wavelength band pulsed pumps are used to achieve tunable conversion of a 980 nm signal over a range of 5 nm with a peak conversion efficiency of \approx 5 %. The demonstrated Bragg scattering process is suitable for frequency conversion of quantum states of light.

physics.optics↗

Telecommunications-band heralded single photons from a silicon nanophotonic chip

We demonstrate heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide (CROW) produced a large four-wave-mixing nonlinearity coefficient gamma_eff ~4100 W^-1 m^-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g^(2)(0) = 0.19 \pm 0.03. The demonstration of a single photon source within a silicon platform holds promise for future integrated quantum photonic circuits.

quant-ph↗

Bright single photon emission from a quantum dot in a circular Bragg grating microcavity

Bright single photon emission from single quantum dots in suspended circular Bragg grating microcavities is demonstrated. This geometry has been designed to achieve efficient (> 50 %) single photon extraction into a near-Gaussian shaped far-field pattern, modest (~10x) Purcell enhancement of the radiative rate, and a spectral bandwidth of a few nanometers. Measurements of fabricated devices show progress towards these goals, with collection efficiencies as high as ~10% demonstrated with moderate spectral bandwidth and rate enhancement. Photon correlation measurements are performed under above-bandgap excitation (pump wavelength = 780 nm to 820 nm) and confirm the single photon character of the collected emission. While the measured sources are all antibunched and dominantly composed of single photons, the multi-photon probability varies significantly. Devices exhibiting tradeoffs between collection efficiency, Purcell enhancement, and multi-photon probability are explored and the results are interpreted with the help of finite-difference time-domain simulations. Below-bandgap excitation resonant with higher states of the quantum dot and/or cavity (pump wavelength = 860 nm to 900 nm) shows a near-complete suppression of multi-photon events and may circumvent some of the aforementioned tradeoffs.

quant-ph↗

Simultaneous Wavelength Translation and Amplitude Modulation of Single Photons from a Quantum Dot

Hybrid quantum information devices that combine disparate physical systems interacting through photons offer the promise of combining low-loss telecommunications wavelength transmission with high fidelity visible wavelength storage and manipulation. The realization of such systems requires control over the waveform of single photons to achieve spectral and temporal matching. Here, we experimentally demonstrate the simultaneous wavelength translation and amplitude modulation of single photons generated by a quantum dot emitting near 1300 nm with an exponentially-decaying waveform (lifetime $\approx$1.5 ns). Quasi-phase-matched sum-frequency generation with a pulsed 1550 nm laser creates single photons at 710 nm with a controlled amplitude modulation at 350 ps timescales.

quant-ph↗

Optomechanical transduction of an integrated silicon cantilever probe using a microdisk resonator

Sensitive transduction of the motion of a microscale cantilever is central to many applications in mass, force, magnetic resonance, and displacement sensing. Reducing cantilever size to nanoscale dimensions can improve the bandwidth and sensitivity of techniques like atomic force microscopy, but current optical transduction methods suffer when the cantilever is small compared to the achievable spot size. Here, we demonstrate sensitive optical transduction in a monolithic cavity-optomechanical system in which a sub-picogram silicon cantilever with a sharp probe tip is separated from a microdisk optical resonator by a nanoscale gap. High quality factor (Q ~ 10^5) microdisk optical modes transduce the cantilever's MHz frequency thermally-driven vibrations with a displacement sensitivity of ~ 4.4x10^-16 m\sqrt[2]{Hz} and bandwidth > 1 GHz, and a dynamic range > 10^6 is estimated for a 1 s measurement. Optically-induced stiffening due to the strong optomechanical interaction is observed, and engineering of probe dynamics through cantilever design and electrostatic actuation is illustrated.

physics.optics↗