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Marco Fanciulli

Publications and source records attributed to Marco Fanciulli.

17 recordsLinked to original sources

Learning Nonlinear Heterogeneity in Physical Kolmogorov-Arnold Networks

Physical neural networks typically train linear synaptic weights while treating device nonlinearities as fixed. We show the opposite - by training the synaptic nonlinearity itself, as in Kolmogorov-Arnold Network (KAN) architectures, we yield markedly higher task performance per physical resource and improved performance-parameter scaling than conventional linear weight-based networks, demonstrating ability of KAN topologies to exploit reconfigurable nonlinear physical dynamics. We experimentally realise physical KANs in silicon-on-insulator devices we term 'Synaptic Nonlinear Elements' (SYNEs), operating at room temperature, microampere currents, 2 MHz speeds and ~750 fJ per nonlinear operation, with no observed degradation over 10^13 measurements and months-long timescales. We demonstrate nonlinear function regression, classification, and prediction of Li-Ion battery dynamics from noisy real-world multi-sensor data. Physical KANs outperform equivalently-parameterised software multilayer perceptron networks across all tasks, with up to two orders of magnitude fewer parameters, and two orders of magnitude fewer devices than linear weight based physical networks. These results establish learned physical nonlinearity as a hardware-native computational primitive for compact and efficient learning systems, and SYNE devices as effective substrates for heterogenous nonlinear computing.

cond-mat.dis-nn

Interface effects and dielectric mismatch in ultrathin silicon on insulator films

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from 10$^{18}$ to nearly 10$^{20}$ cm$^{-3}$. P concentration is determined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Sample resistivity ($\rho$), carrier concentration ($n_e$), and mobility ($\mu_e$) are extracted by combining sheet resistance and Hall measurements in van der Pauw configuration. When $H_{SOI}$ = 30 nm, transport properties at room temperature are fully compatible with those of a similarly doped bulk Si. Progressive 2D confinement by reduction of $H_{SOI}$ below 30 nm results in a reduction of the carrier concentration and a concomitant degradation of $\mu_e$. These effects, which are steadily enhanced decreasing $n_D$, are attributed to non-passivated interface states at the SiO$_2$/Si interface and can be significantly mitigated by high temperature rapid thermal oxidation (RTO). The effectiveness of this approach was verified by electron-paramagnetic resonance (EPR) spectra and capacitance-voltage (CV) measurements, which allowed the assessment of the quality of the RTO-SiO$_2$/Si interface and the correlation with observed electrical properties. After effective interface engineering, low temperature electrical characterization revealed a significant increase in P ionization energy in samples with $H_{SOI}$ <= 15 nm, a result directly related to the dielectric mismatch.

cond-mat.mes-hall

Transition Metal Dichalcogenide 1T$'$-MoTe$_2$ Nanoscale Films as Spin Pumping Platforms

Transition metal dichalcogenides (TMDs) have emerged as a promising class of materials for spintronics, with the aim of promoting efficient spin-charge conversion (SCC) in TMD/ferromagnet (FM)-based devices. The MoTe$_2$ semimetal with distorted orthorhombic crystal structure in the 1T$'$ phase has gathered particular attention due to its high spin-orbit coupling and reconfigurability as a type-II Weyl semimetal close to room temperature. Here, we report on the role of chemically grown 1T$'$-MoTe$_2$ thin films in inducing SCC in 1T$'$-MoTe$_2$/FM heterostructures as measured at room temperature. Ferromagnetic resonance (FMR) and electrically detected spin-pumping FMR measurements performed on 1T$'$-MoTe$_2$/Co/Au and 1T$'$-MoTe$_2$/Au/Co/Au heterostructures reveal a spin-mixing conductance value of up to $\sim1.6 \times 10^{20}~\mathrm{m^{-2}}$ and a spin Hall angle of $1.7\%$. These findings position MoTe$_2$ thin films as a competitive spin-charge conversion option compared to other functional materials (e.g., heavy metals, topological insulators), highlighting their potential for future applications in spintronic devices.

cond-mat.mtrl-sci

Design and simulation of a transmon qubit chip for Axion detection

Quantum Sensing is a rapidly expanding research field that finds one of its applications in Fundamental Physics, as the search for Dark Matter. Devices based on superconducting qubits have already been successfully applied in detecting few-GHz single photons via Quantum Non-Demolition measurement (QND). This technique allows us to perform repeatable measurements, bringing remarkable sensitivity improvements and dark count rate suppression in experiments based on high-precision microwave photon detection, such as for Axions and Dark Photons search. In this context, the INFN Qub-IT project goal is to realize an itinerant single-photon counter based on superconducting qubits that will exploit QND for enhancing Axion search experiments. In this study, we present Qub-IT's status towards the realization of its first superconducting qubit device, illustrating design and simulation procedures and the characterization of fabricated Coplanar Waveguide Resonators (CPWs) for readout. We match target qubit parameters and assess a few-percent level agreement between lumped and distributed element simulation models. We reach a maximum internal quality factor of 9.2x10^5 for -92 dBm on-chip readout power.

quant-ph

Superconducting microresonators for electron spin resonance, the good, the bad, and the future

The field of electron spin resonance is in constant need to improve its capabilities. Among other things, this means having better resonators which would provide improved spin sensitivity, as well as enable larger microwave magnetic field power conversion factors. Surface micro resonators, made of small metallic patches on a dielectric substrate, provide very good absolute spin sensitivity and high conversion factors due to their very small mode volume. However, such resonators suffer from having a relatively low quality factor, which offsets some of their significant potential advantages. The use of superconducting patches to replace the metallic layer seems like a reasonable and straightforward solution to the quality factor issue, at least for measurements carried out at cryogenic temperatures. Nevertheless, superconducting materials are not easily incorporated into setups requiring high magnetic fields, due to electric current vortices generated in the latter's surface. This makes the transition from normal conducing materials to superconductors highly nontrivial. Here we present the design, fabrication, and testing results of surface micro resonators made of yttrium barium copper oxide (YBCO) superconducting material. We show that with a unique experimental setup, these resonators can be made to operate well even at high fields of about 1.2 T. Furthermore, we analyze the effect of current vortices on the ESR signal and the spins' coherence times. Finally, we provide a head to head comparison of YBCO vs copper resonators of the same dimensions, which clearly shows their pros and cons and directs us to future potential developments and improvements in this field.

physics.chem-ph

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.

cond-mat.mtrl-sci

Giant g factor tuning of long-lived electron spins in Ge

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits in the mature framework of Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome such fundamental limitations by investigating a two dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally long spin relaxation and coherence times, eventually unveiling the potential of Ge in bridging the gap between spintronic concepts and semiconductor device physics. In particular, by tuning spin-orbit interaction via quantum confinement we demonstrate that the electron Landé g factor and its anisotropy can be engineered in our scalable and CMOS-compatible architectures over a range previously inaccessible for Si spintronics.

cond-mat.mtrl-sci

Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture

Scalability from single qubit operations to multi-qubit circuits for quantum information processing requires architecture-specific implementations. Semiconductor hybrid qubit architecture is a suitable candidate to realize large scale quantum information processing, as it combines a universal set of logic gates with fast and all-electrical manipulation of qubits. We propose an implementation of hybrid qubits, based on Si Metal-Oxide-Semiconductor (MOS) quantum dots, compatible with the CMOS industrial technologic standards. We discuss the realization of multi-qubit circuits capable of fault-tolerant computation and quantum error correction, by evaluating the time and space resources needed for their implementation. As a result, the maximum density of quantum information is extracted from a circuit including 8 logical qubits encoded by the [[7,1,3]] Steane code. The corresponding surface density of logical qubits is 2.6 Mqubit/cm$^2$.

quant-ph

Universal Set of Quantum Gates for Double-Dot Exchange-Only Spin Qubits with Intradot Coupling

We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for Hadamard gate and $π$/8 gate, and the two-qubit controlled NOT (CNOT) gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations.

quant-ph

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.

cond-mat.mes-hall

Adiabatic Charge Control in a Single Donor Atom Transistor

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of their energy spectrum as a function of the back gate voltage, causing the crossing of the energy levels. We observe the sequential tunneling through the $D^{2-}$ and the $D^{3-}$ energy levels of the donor hybridized at the oxide interface at 4.2 K. Their respective states form an honeycomb pattern with the quantum dot states. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor, thus realizing a physical qubit for quantum information processing applications.

quant-ph

Compact silicon double and triple dots realized with only two gates

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.

cond-mat.mes-hall

Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble model applies, the time domain charge fluctuation in the defect is used to determine the temperature of the few electron gas in the channel.

cond-mat.mes-hall

Microwave Assisted Transport in a Single Donor Silicon Quantum Dot

Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunneling and microwave induced electron pumping regimes are revealed respectively at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first excited energy level of the $D_0$ energy of the donor. Such microwave assisted transport at zero bias enhances the resolution in the spectroscopy of the energy levels of the donor.

cond-mat.mes-hall

Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.

cond-mat.mes-hall

Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET

We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. From the dc current excited into the MOSFET by the microwave field we determine the corresponding equivalent drain voltage. The RTS experimental data are in agreement with the prediction obtained with the model, making use of the voltage data measured with the independent dc microwave induced current. We conclude that when operating a MOSFET under microwave irradiation, as in single spin resonance detection, one has to pay attention into the effects related to microwave irradiation dependent RTS changes.

cond-mat.other

Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs

We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and $^{3}$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is either in-plane or perpendicular to the two dimensional electron gas. The experimental data can be explained by considering a model which includes the triplet state of the trapping center and the polarization of the channel electron gas.

cond-mat.mes-hall