Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency
Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times τ_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $τ_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory.
physics.app-ph↗