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arXiv · 2011.13878

Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency

Maria Augusta R. B. L. Fernandes·Edval J. P. Santos
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Abstract

Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times \tau_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $\tau_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory.

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Maria Augusta R. B. L. Fernandes, Edval J. P. Santos. 2020-11-27. Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency. https://arxiv.org/abs/2011.13878

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