arXiv subjects

Maria F. Munoz

Publications and source records attributed to Maria F. Munoz.

5 recordsLinked to original sources

arXiv2026

Transport Enhancement and In Situ Control of Electronic Correlation via Photoinduced Modulation Doping of van der Waals Heterostructures

Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping in hBN-graphene-hBN-SiO2 heterostructures utilizing standard white light sources and no additional fabrication complexity. We establish the use of this technique to both dope the channel material and to photoanneal devices, providing control over electronic doping and disorder in the graphene channel. We analyze the transport properties by employing Drude and Landauer transport models, highlighting the ability to reversibly tune the mobility and mean scattering length of the graphene with a high degree of accuracy. This tunability allows us to switch our device between the diffusive and quasi-ballistic transport regimes in situ. We utilize the exceptional control our technique provides over local disorder to realize quantum Hall isospin ferromagnetic states in a device whose initial quality would otherwise leave such states unobservable. These results demonstrate precise manipulation of carrier density and charge disorder in van der Waals heterostructures, providing a highly accessible approach to creating high-quality devices capable of realizing correlated electronic states.

cond-mat.mes-hall↗

arXiv2025

Accurate Angle-Resolved Raman Spectroscopy Methodology: Quantifying the Dichroic Edge Filter Effect

Angle-resolved Raman spectroscopy (ARRS) is an effective method to analyze the symmetry of phonons and other excitations in molecules and solid-state crystals. While there are several configurations of ARRS instruments, the measurement system detailed here utilizes two pairs of linear polarizers and superachromatic half-wave plates. After the orientations of the linear polarizers are set to fixed angles, the two half-wave plates rotate independently, through motorized control, enabling 2D linear polarization mapping. Described within is a protocol to achieve high quality ARRS measurements leveraging phonons from easily accessible test materials [molybdenum disulfide (MoS_2), sapphire (Al_2O_3) and silicon] to validate the system and operation. Quantitative polarized Raman data strongly depends on the quality of sample surface and the optics: the order of placement, alignment, and any distortion caused by their coatings. This study identifies the impact of commonly used edge filters on the polarization response of materials with an anisotropic response as emulated by the T_2g phonon in the Si(100). We detect and model the significant distortion of the T_2g phonon polarization response originating from our dichroic edge filters, the results of which are broadly applicable to optics in any Raman instrument. This ARRS setup also enables helicity-resolved Raman measurements by replacing the first half-wave plate with a superachromatic quarter-wave plate; this configuration is also validated using the Raman response of the aforementioned test materials. This paper aims to increase the quality and reproducibility of polarized Raman measurements through both instrumental considerations and methodology.

physics.optics↗

arXiv2025

Probing Magnetic Properties of RuO$_{2}$ Heterostructures Through the Ferromagnetic Layer

RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to possible interface effects being convoluted with supposed antiferromagnetic/altermagnetic signatures. Here, extensive magnetometry measurements were performed on two independently grown thin film heterostructures of RuO$_{2}$ interfaced with either NiFe or Fe acting as the ferromagnetic layer. Below about 15 K, both samples exhibit exchange bias fields when cooled to approximately 2 K in a $+$1 T field, and a spin transitional feature is observed around 31 K. Magneto-Raman measurements on RuO$_{2}$ thin films only reveal a magnon mode when there is a NiFe layer, suggesting that RuO$_{2}$ does not intrinsically possess long range magnetic ordering.. When in contact with a ferromagnet, RuO$_2$ displays effects that could be ascribed to antiferromagnetism. However, the lack of intrinsic magnon modes points toward possible diffusion between the layers or spin disorder at the interface as seen by density functional theory (DFT) calculations.

cond-mat.mtrl-sci↗

arXiv2024

Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures

Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, magnetotransport measurements including quantum Hall measurements are performed to characterize the device performance. In the unipolar (p+-p-p+ and n-n+-n) configurations, we observe quantization of the longitudinal resistance, proving well-defined doped regions and interfaces that are further analyzed by Landauer-Buttiker modeling. Our unique measurements and modeling of these optically doped devices reveal a complete separation of the p- and n-Landau level edge states. The non-interaction of the edge states results in an observed "insulating" state in devices with a bi-polar p-n-p configuration that is uncommon and has not been measured previously in graphene devices. This insulating state could be utilized in high-performance graphene electrical switches. These quantitative magnetotransport measurements confirm that these doping techniques can be applied to any 2D materials encapsulated within hBN layers, enabling versatile, rewritable circuit elements for future computing and memory applications.

cond-mat.mes-hall↗

arXiv2020

Fast phase cycling in non-collinear optical two-dimensional coherent spectroscopy

As optical two-dimensional coherent spectroscopy (2DCS) is extended to a broader range of applications, it is critical to improve the detection sensitivity of optical 2DCS. We developed a fast phase-cycling scheme in a non-collinear optical 2DCS implementation by using liquid crystal phase retarders to modulate the phases of two excitation pulses. The background in the signal can be eliminated by combining either two or four interferograms measured with a proper phase configuration. The effectiveness of this method was validated in optical 2DCS measurements of an atomic vapor. This fast phase-cycling scheme will enable optical 2DCS in novel emerging applications that require enhanced detection sensitivity.

physics.optics↗