arXiv subjects

Mark R. Hirsbrunner

Publications and source records attributed to Mark R. Hirsbrunner.

24 records · Page 2Linked to original sources

arXiv2022

Topological Field Theories of Three-Dimensional Rotation Symmetric Insulators: Coupling Curvature and Electromagnetism

Quantized responses are important tools for understanding and characterizing the universal features of topological phases of matter. In this work, we consider a class of topological crystalline insulators in $3$D with $C_n$ lattice rotation symmetry along a fixed axis, in addition to either mirror symmetry or particle-hole symmetry. These insulators can realize quantized mixed geometry-charge responses. When the surface of these insulators is gapped, disclinations on the surface carry a fractional charge that is half the minimal amount that can occur in purely $2$D systems. Similarly, disclination lines in the bulk carry a fractionally quantized electric polarization. These effects, and other related phenomena, are captured by a $3$D topological response term that couples the lattice curvature to the electromagnetic field strength. Additionally, mirror symmetric insulators with this response can be smoothly deformed into a higher-order octopole insulator with quantized corner charges. We also construct a symmetry indicator form for the topological invariant that describes the quantized response of the mirror symmetric topological crystalline insulators, and discuss an unusual response quantization in time-reversal breaking systems.

cond-mat.str-el↗

arXiv2022

Engineering ideal helical topological networks in stanene via Zn decoration

The xene family of topological insulators plays a key role in many proposals for topological electronic, spintronic, and valleytronic devices. These proposals rely on applying local perturbations, including electric fields and proximity magnetism, to induce topological phase transitions in xenes. However, these techniques lack control over the geometry of interfaces between topological regions, a critical aspect of engineering topological devices. We propose adatom decoration as a method for engineering atomically precise topological edge modes in xenes. Our first-principles calculations show that decorating stanene with Zn adatoms exclusively on one of two sublattices induces a topological phase transition from the quantum spin Hall (QSH) to quantum valley Hall (QVH) phase and confirm the existence of spin-valley polarized edge modes propagating at QSH/QVH interfaces. We conclude by discussing technological applications of these edge modes that are enabled by the atomic precision afforded by recent advances in adatom manipulation technology.

cond-mat.mes-hall↗

arXiv2020

Electric field effects on the band gap and edge states of monolayer 1T'-WTe2

Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of an unconventional, potentially topological superconducting state upon tuning the carrier concentration with gating. However, despite extensive studies, the effects of gating on the band structure and the helical edge states have not yet been established. In this work we present a combined low-temperature STM and first principles study of back-gated monolayer 1T'-WTe2 films grown on graphene. Consistent with a quantum spin Hall system, the films show well-defined bulk gaps and clear edge states that span the gap. By directly measuring the density of states with STM spectroscopy, we show that the bulk band gap magnitude shows substantial changes with applied gate voltage, which is contrary to the naïve expectation that a gate would rigidly shift the bands relative to the Fermi level. To explain our data, we carry out density functional theory and model Hamiltonian calculations which show that a gate electric field causes doping and inversion symmetry breaking which polarizes and spin-splits the bulk bands. Interestingly, the calculated spin splitting from the effective Rashba-like spin-orbit coupling can be in the tens of meV for the electric fields in the experiment, which may be useful for spintronics applications. Our work reveals the strong effect of electric fields on the bulk band structure of monolayer 1T'-WTe2, which will play a critical role in our understanding of gate-induced phenomena in this system.

cond-mat.mes-hall↗

arXiv2019

Topology and Observables of the Non-Hermitian Chern Insulator

Topology plays a central role in nearly all disciplines of physics, yet its applications have so far been restricted to closed, lossless systems in thermodynamic equilibrium. Given that many physical systems are open and may include gain and loss mechanisms, there is an eminent need to reexamine topology within the context of non-Hermitian theories that describe open, lossy systems. The recent generalization of the Chern number to non-Hermitian Hamiltonians initiated this reexamination; however, there is so far no established connection between a non-Hermitian topological invariant and the quantization of an observable. In this work, we show that no such relationship exists between the Chern number of non-Hermitian bands and the quantization of the Hall conductivity. Using field theoretical techniques, we calculate the longitudinal and Hall conductivities of a non-Hermitian Hamiltonian with a finite Chern number to explicitly demonstrate the physics of a non-quantized Hall conductivity despite an invariable Chern number. These results demonstrate that the Chern number does not provide a physically meaningful classification of non-Hermitian Hamiltonians.

cond-mat.mes-hall↗

arXiv2018

Loss of Hall Conductivity Quantization in a Non-Hermitian Quantum Anomalous Hall Insulator

Recent work has extended topological band theory to open, non-Hermitian Hamiltonians, yet little is understood about how non-Hermiticity alters the topological quantization of associated observables. We address this problem by studying the quantum anomalous Hall effect (QAHE) generated in the Dirac surface states of a 3D time-reversal-invariant topological insulator (TI) that is proximity-coupled to a metallic ferromagnet. By constructing a contact self-energy for the ferromagnet, we show that in addition to generating a mass gap in the surface spectrum, the ferromagnet can introduce a non-Hermitian broadening term, which can obscure the mass gap in the spectral function. We calculate the Hall conductivity for the effective non-Hermitian Hamiltonian describing the heterostructure and show that it is no longer quantized despite being classified as a Chern insulator based on non-Hermitian topological band theory. Our results indicate that the QAHE will be challenging to experimentally observe in ferromagnet-TI heterostructures due to the finite lifetime of quasi-particles at the interface.

cond-mat.mes-hall↗

arXiv2016

Performance of Topological Insulator Interconnects

The poor performance of copper interconnects at the nanometer scale calls for new material solutions for continued scaling of integrated circuits. We propose the use of three dimensional time-reversal-invariant topological insulators (TIs), which host backscattering-protected surface states, for this purpose. Using semiclassical methods, we demonstrate that nanoscale TI interconnects have a resistance 1-3 orders of magnitude lower than copper interconnects and graphene nanoribbons at the nanometer scale. We use the nonequilibrium Green function (NEGF) formalism to measure the change in conductance of nanoscale TI and metal interconnects caused by the presence of impurity disorder. We show that metal interconnects suffer a resistance increase, relative to the clean limit, in excess of 500% due to disorder while the TI's surface states increase less than 35% in the same regime.

cond-mat.mes-hall↗