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Mark S. Rzchowski

Publications and source records attributed to Mark S. Rzchowski.

12 recordsLinked to original sources

Direct imaging and control of Berry curvature in noncollinear antiferromagnetic single-crystal thin films

The discovery of the intrinsic anomalous Hall effect (AHE) in noncollinear antiferromagnets where transverse Hall voltage emerges without magnetic field, has opened a plethora of promising opportunities in antiferromagnetic devices. The key challenges limiting their full potential are (1) high-quality epitaxial thin-film growth and (2) the understanding of Berry curvature domain physics. Here, we focus on a noncollinear antiperovskite antiferromagnet Mn3NiN as a model system, successfully grown as a single-crystal epitaxial thin film. Combining multiple experiments supported by theoretical calculations, we probe the Berry curvature associated with antiferromagnetic Γ4g domains in Mn3NiN and its strong connection to an AHE. We directly image the intrinsic Berry curvature with high-resolution Sagnac microscopy, controlling spatial distribution and dynamics by varying temperature and applied magnetic fields. We discover that the Γ4g domains are switchable near the Néel transition, but become frozen and unresponsive to external stimuli at low temperature. This behavior enables the tuning of Berry-curvature driven AHE and magneto-optic Kerr effect responses through controlled experimental conditions. Our findings provide critical advancement of the fundamental understanding and wide tunability of Berry curvature in noncollinear antiferromagnets important for realization in potential spintronic applications.

cond-mat.mtrl-sci

Symmetry-designed BiFeO3 single domain spin cycloid for efficient spintronics

Deterministic control of coupled ferroelectric and antiferromagnetic orders remains a central challenge in multiferroics, limiting their integration into functional magnetoelectrics and magnonic-devices. (111)pc BiFeO3 with a robust single spin cycloid, offers direct magnetoelectric-coupling and a platform for efficient spin transport, yet multi-magnetic domains and ferroelectric-fatigue have prevented reproducible control. Here, we show that anisotropic-compressive in-plane strain stabilizes a single antiferromagnetic domain with unique spin-cycloid vector, by breaking the symmetry of the (111)pc plane. Epitaxial BiFeO3 films grown on orthorhombic NdGaO3 (011)o [(111)pc] substrates impose the required anisotropic in-plane strain and stabilizes single antiferromagnetic domain, as confirmed through direct imaging with scanning NV microscopy and non-resonant-x-ray-magnetic-scattering. Remarkably, these engineered films exhibit deterministic and non-volatile 180° switching of ferroelectric and single antiferromagnetic domains over 1,000 cycles. The monodomain state also enables anisotropic and threefold enhanced magnon transport with reduced scattering. Thus, symmetry-designed (111)pc monodomain BiFeO3 offers a robust platform for advanced magnetoelectric and magnonic applications.

cond-mat.mtrl-sci

Metal-organic Pulsed Laser Deposition for Complex Oxide Heterostructures

Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis technique for the precise manipulation of these defects, using LaAlO3/SrTiO3 (LAO/STO) as a model system. By employing titanium tetraisopropoxide (TTIP) as the titanium precursor, MOPLD achieves refined stoichiometric control in STO layers while preserving their structural integrity, as confirmed by X-ray diffraction and Raman spectroscopy. Depth-resolved cathodoluminescence spectroscopy and density functional theory calculations reveal that increasing TTIP flux during STO growth enhances the [TiSr]/[VSr] ratio and reduces the [VO] concentration. These defect modifications lead to a significant improvement in the low-temperature mobility of the two-dimensional electron gas at the LAO/STO interface, evidenced by distinct Shubnikov-de Haas oscillations. This work underscores the potential of MOPLD to advance defect engineering in complex oxide heterostructures, opening new avenues for quantum material research.

cond-mat.mtrl-sci

Twisted oxide membrane interface by local atomic registry design

Interplay of lattice, orbital, and charge degrees of freedom in complex oxide materials has hosted a plethora of exotic quantum phases and physical properties. Recent advances in synthesis of freestanding complex oxide membranes and twisted heterostructures assembled from membranes provide new opportunities for discovery using moiré design with local lattice control. To this end, we designed moiré crystals at the coincidence site lattice condition, providing commensurate structure within the moiré supercell arising from the multi-atom complex oxide unit cell. We fabricated such twisted bilayers from freestanding SrTiO3 membranes and used depth sectioning-based TEM methods to discover ordered charge states at the moiré interface. By selectively imaging SrTiO3 atomic planes at different depths through the bilayer, we clearly resolved the moiré periodic structure at the twisted interface and found that it exhibits lattice-dependent charge disproportionation in the local atomic registry within the moiré supercell. Our density-functional modelling of the twisted oxide interface predicts that these moiré phenomena are accompanied by the emergence of a two-dimensional flat band that can drive new electronic phases. Our work provides a novel guideline for controlling moiré periodicity in twisted oxides and opens pathways to exploit the new functionalities via moiré lattice-driven charge-orbital correlation.

cond-mat.mtrl-sci

Prediction of polarization vortices, charge modulation, flat bands, and moiré magnetism in twisted oxide bilayers

The recent surge of interest in moiré superlattices of twisted van der Waals compounds has spotlighted the emergence of unconventional superconductivity and novel electronic phases. However, the range of moiré phenomena can be dramatically expanded by incorporating complex oxide materials into twisted heterostructures. In this study, motivated by the recent breakthroughs in synthesis of free-standing oxide membranes, we explore the emergent structural and electronic properties of twisted oxide bilayers. We focus on the classic perovskite oxide, SrTiO3, and design SrTiO3 bilayers with a relative twist between the individual layers. Using density functional theory calculations, we predict the appearance of vortex-antivortex polarization patterns at the interface of the SrTiO3 bilayers driven by twist. We also predict charge modulation of the interfacial Ti ions induced by varying local coordination which follow the moiré pattern. Furthermore, we forecast the emergence of flat bands at large twist angles and the associated localized electronic states with moiré-periodic charge density, originating from the interlayer bonding effects resulting in the formation of dangling bonds. Finally, we predict that hole doping induces unconventional d0 magnetism in otherwise nonmagnetic SrTiO3, driven by the exchange splitting of the high-density O-p bands and producing the spin density with moiré periodicity. These results demonstrate a broad landscape of emergent phenomena which may occur in moiré-engineered oxide heterostructures showing far-reaching perspectives of these material systems for further fundamental studies and potential applications.

cond-mat.mtrl-sci

Symmetry-controlled orbital Hall effect in IrO$_2$

Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents, similar to spin currents, have the ability to generate torque on adjacent magnetic layers, opening a new avenue for efficient spintronic devices. However, separating spin and orbital currents has been one of the major challenges. Here, we show evidence for large conventional as well as unconventional spin and orbital currents in IrO$_2$ and disentangle them by crystal symmetry. We study the anisotropic spin and orbital Hall effects in IrO$_2$ (001), (100), and (111) orientations and find unconventional z-polarized orbital torques using angular spin torque ferromagnetic resonance of IrO$_2$/Ni heterostructures, which are in agreement regarding the relative signs with theoretical calculations of spin and orbital Hall conductivity. This work provides a promising route towards highly efficient low power spintronic and orbitronic devices in oxide heterostructures.

cond-mat.mtrl-sci

Experimental tests of the full spin torque conductivity tensor in epitaxial IrO2 thin films

Unconventional spin-orbit torques arising from electric-field-generated spin currents in anisotropic materials have promising potential for spintronic applications, including for perpendicular magnetic switching in high-density memory applications. Here we determine all the independent elements of the spin torque conductivity tensor allowed by bulk crystal symmetries for the tetragonal conductor IrO2, via measurements of conventional (in plane) antidamping torques for IrO2 thin films in the high-symmetry (001) and (100) orientations. We then test that rotational transformations of this same tensor can predict both the conventional and unconventional anti-damping torques for IrO2 thin films in the lower-symmetry (101), (110), and (111) orientations, finding good agreement. The results confirm that spin-orbit torques from all these orientations are consistent with the bulk symmetries of IrO2, and show how simple measurements of conventional torques from high-symmetry orientations of anisotropic thin films can provide an accurate prediction of the unconventional torques from lower-symmetry orientations.

cond-mat.mtrl-sci

Electronic-grade epitaxial (111) KTaO3 heterostructures

KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.

cond-mat.mtrl-sci

Local atomic configuration control of superconductivity in the undoped pnictide parent compound BaFe2As2

Emergent superconductivity is strongly correlated with the symmetry of local atomic configuration in the parent compounds of iron-based superconductors. While chemical doping or hydrostatic pressure can change the local geometry, these conventional approaches do not provide a clear pathway in tuning the detailed atomic arrangement predictably, due to the parent compounds complicated structural deformation in the presence of the tetragonal-to-orthorhombic phase transition. Here, we demonstrate a systematic approach to manipulate the local structural configurations in BaFe2As2 epitaxial thin films by controlling two independent structural factors orthorhombicity (in-plane anisotropy) and tetragonality (out-of-plane/in-plane balance) from lattice parameters. We tune superconductivity without chemical doping utilizing both structural factors separately, controlling local tetrahedral coordination in designed thin film heterostructures with substrate clamping and bi-axial strain. We further show that this allows quantitative control of both the structural phase transition, associated magnetism, and superconductivity in the parent material BaFe2As2. This approach will advance the development of tunable thin film superconductors in reduced dimension.

cond-mat.supr-con

Epitaxial antiperovskite/perovskite heterostructures for materials design

We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first-principle calculations, we investigated the atomic-scale structure, composition, and boding at the interface. We show that the epitaxial growth between the antiperovskite and perovskite compounds is mediated by a coherent interfacial monolayer that connects the two anti-structures. We anticipate our results to be a major step for the development of functional antiperovskite/perovskite heterostructures opening to harness a combination of their functional properties including topological properties for ultra low power applications.

cond-mat.mtrl-sci

Superconductivity-localization interplay and fluctuation magnetoresistance in epitaxial BaPb$_{1-x}$Bi$_x$O$_3$ thin films

BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we use high-quality epitaxial thin films and magnetotransport to demonstrate superconducting fluctuations that extend well beyond $T_c$. For the thickest films (thickness above $\sim100$ nm) this region extends to $\sim27$ K, well above the bulk $T_c$ and remarkably close to the higher $T_c$ of Ba$_{1-x}$K$_x$BiO$_3$ ($T_c=31$ K). We drive the system through a superconductor-insulator transition by decreasing thickness and find the observed $T_c$ correlates strongly with disorder. This material manifests strong fluctuations across a wide range of thicknesses, temperatures, and disorder presenting new opportunities for understanding the precursor of superconductivity near the 2D-3D dimensionality crossover.

cond-mat.supr-con

Epitaxial magnetic perovskite nanostructures

Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM study confirmed the ferromagnetism of the produced particles.

cond-mat.mtrl-sci