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arXiv · 2308.13180

Electronic-grade epitaxial (111) KTaO3 heterostructures

Jieun Kim·Muqing Yu·Jung-Woo Lee·Shun-Li Shang·Gi-Yeop Kim·Pratap Pal·Jinsol Seo·Neil Campbell·Kitae Eom·Ranjani Ramachandran·Mark S. Rzchowski·Sang Ho Oh·Si-Young Choi·Zi-Kui Liu·Jeremy Levy·Chang-Beom Eom
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Abstract

KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.

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Jieun Kim, Muqing Yu, Jung-Woo Lee, Shun-Li Shang, Gi-Yeop Kim, Pratap Pal, Jinsol Seo, Neil Campbell, Kitae Eom, Ranjani Ramachandran, Mark S. Rzchowski, Sang Ho Oh, Si-Young Choi, Zi-Kui Liu, Jeremy Levy, Chang-Beom Eom. 2023-08-25. Electronic-grade epitaxial (111) KTaO3 heterostructures. https://arxiv.org/abs/2308.13180

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