arXiv subjects

Mark W. Harrington

Publications and source records attributed to Mark W. Harrington.

14 recordsLinked to original sources

arXiv2026

Heterogeneously Integrated Balanced Photodetector on an Ultra-Low Loss Silicon Nitride Delay Line Interferometer

Thin core silicon nitride photonics enables ultra-low loss, CMOS foundry compatible integration that supports wavelengths from the visible to shortwave infrared. Applications that can benefit from the resulting lower cost, improved robustness, and portability include quantum sensing and computing, ultra-low noise microwave generation, optical clocks, optical gyros, coherent fiber communications, and fiber sensing. An important next step is integration of functional circuits and systems on chip with heterogeneous integration of active components such as high-performance photodetection. Yet to date integrated high-performance photodetectors on the thin film silicon nitride platform has remained elusive. In this work, we demonstrate heterogeneous integration of an InGaAs on InP substrate Modified Uni-Traveling Carrier balanced photodetector with a 15-meter-long unbalanced thin core silicon nitride Mach-Zehnder Interferometer with a bandwidth of 0.92 GHz and a responsivity of 0.305 A/W at 1550 nm with a propagation loss as low as 2.5 dB/m at 1600 nm. Using this circuit we demonstrate two functions, a meter-scale differential interferometer laser stabilization circuit achieving a nearly 23 dB noise suppression at 1 kHz offset and an optical frequency discriminator frequency noise measurement with high sensitivity across 6 orders of magnitude from 10 Hz to 10 MHz. These results demonstrate that the high performance of thin core silicon nitride devices can be combined with integrated high-performance photodetection to realize on-chip stabilized lasers and circuits and pave the path towards full systems on chip.

physics.optics↗

arXiv2026

Blue to Near-IR Integrated PZT Silicon Nitride Modulators for Quantum and Atomic Applications

Modulation and control of lasers and optical signals is necessary for trapped-ion and cold neutral atom quantum systems. Given the diversity of atomic species, experimental modalities, and architectures, integrated optical modulators designed to operate across the visible to near-infrared spectrum are a key step towards portable, robust, and compact quantum computers, clocks, and sensors. Integrated optical modulators that are wavelength-independent, CMOS-compatible, and capable of maintaining low waveguide losses and a high resonator quality factor, DC-coupled broadband frequency response, and low power consumption, are essential for scalable photonic integration. Yet progress towards these goals has remained limited. Here we demonstrate four types of integrated stress-optic lead zirconate titanate (PZT) silicon nitride modulators: a coil Mach-Zehnder modulator, a coil pure phase modulator, and bus-coupled and add-drop ring resonator modulators, with operation from 493 nm to 780 nm. The coil MZM operates at 532 nm with a V$π$ of 2.8V, a 0.4 MHz 3-dB bandwidth, and an extinction ratio of 21.5dB. The coil phase modulator operates at 493 nm with a V$π$ of 2.8V and low residual amplitude modulation of -34 dB at a 1kHz offset. The bus-coupled ring resonator modulator operates at 493 nm and the add-drop ring resonator modulator operates at 780 nm. The ring-based modulators have an intrinsic quality factor of 3.4 million and 1.9 million, a linear tuning strength of 0.9 GHz/V and 1 GHz/V, and a 3-dB bandwidth of 2.6 MHz and 10 MHz, respectively. All four modulator designs maintain the low optical waveguide loss of SiN, are DC coupled with broadband frequency response, operate independent of wavelength, and consume only tens of nW per actuator. Such solutions unlock the potential for further integration with other precision SiN components to realize chip-scale atomic and quantum systems.

physics.optics↗

arXiv2026

Sub-Doppler rubidium atom cooling using a programmable agile integrated PZT-on-SiN resonator

Programmability and precise control of laser frequency are essential for quantum experiments and applications such as atomic clocks, quantum computers, and cold-atom sensors. Current systems use bulky, power-hungry modulators and frequency shifters which are difficult to integrate and limit portability and scalability. We report an electrically controllable, agile optical frequency source based on a semiconductor laser stabilized to a photonic-integrated, lead zirconate titanate (PZT)-actuated resonator cavity. We demonstrate this approach with precision programmable frequency control of a 780-nm laser that can periodically reference to rubidium spectroscopy followed by fast, programmable, arbitrary frequency tuning sequences for quantum control. We use this approach to demonstrate sub-Doppler cooling of rubidium-87 without any external modulators, achieving atom-cloud temperatures as low as 16 $μ$K. The device achieves a tuning strength up to 1 GHz/V with 11 MHz modulation bandwidth while consuming only 10 nW of electrical power. This work establishes a route toward compact, low-power, and chip-scale laser systems for next-generation quantum and atomic sensing technologies.

physics.optics↗

arXiv2025

Octave Spanning Visible to SWIR Integrated Coil-Stabilized Brillouin Lasers

Narrow linewidth stabilized lasers are central to precision applications that operate across the visible to short-wave infrared wavelengths, including optical clocks, quantum sensing and computing, ultra-low noise microwave generation, and fiber sensing. Today, these spectrally pure sources are realized using multiple external cavity tabletop lasers locked to bulk-optic free-space reference cavities. Integration of this technology will enable portable precision applications with improved reliability and robustness. Here, we report wavelength-flexible design and operation, over more than an octave span, of an integrated coil-resonator-stabilized Brillouin laser architecture. Leveraging a versatile two-stage noise reduction approach, we achieve low linewidths and high stability with chip-scale laser designs based on the ultra-low-loss, CMOS-compatible silicon nitride platform. We report operation at 674 and 698 nm for applications to strontium neutral and trapped-ion clocks, quantum sensing and computing, and at 1550 nm for applications to fiber sensing and ultra-low phase noise microwave generation. Over this range we demonstrate frequency noise reduction from 1 Hz to 10 MHz resulting in 1.0 Hz -17 Hz fundamental and 181 Hz - 630 Hz integral linewidths and an Allan deviation of 6.5 x 10-13 at 1 ms for 674 nm, 6.0 x 10-13 at 15 ms for 698 nm, and 2.6 x10-13 at 15 ms for 1550 nm. This represents the lowest achieved linewidths and highest stability for integrated stabilized Brillouin lasers over an order of magnitude improvement in operating wavelength range. These results unlock the potential of integrated, ultra-low-phase-noise stabilized lasers for precision applications and further integration in systems-on-chip solutions.

physics.optics↗

arXiv2025

Multi-laser stabilization with an atomic-disciplined photonic integrated resonator

Precision atomic and quantum experiments rely on ultra-stable narrow linewidth lasers constructed using table-top ultra-low expansion reference cavities. These experiments often require multiple lasers, operating at different wavelengths, to perform key steps used in state preparation and measurement required in quantum sensing and computing. This is traditionally achieved by disciplining a cavity-stabilized laser to a key atomic transition and then transferring the transition linewidth and stability to other lasers using the same reference cavity in combination with bulk-optic frequency shifting such as acousto-optic modulators. Transitioning such capabilities to a low cost photonic-integrated platform will enable a wide range of portable, low power, scalable quantum experiments and applications. Yet, today's bulk optic approaches pose challenges related to lack of cavity tunability, large free spectral range, and limited photonic integration potential. Here, we address these challenges with demonstration of an agile photonic-integrated 780 nm ultra-high-Q tunable silicon nitride reference cavity that performs multiple critical experimental steps including laser linewidth narrowing, high resolution rubidium spectroscopy, dual-stage stabilization to a rubidium transition, and stability transfer to other lasers. We achieve up to 20 dB of frequency noise reduction at 10 kHz offset, precision spectroscopy over a 250 MHz range, and dual-stage locking to rubidium with an Allan deviation of $8.5 \times 10^{-12}$ at 1 s and up to 40 dB reduction at 100 Hz. We further demonstrate the transfer of this atomic stability to a second laser, via the rubidium-disciplined cavity, and demonstrate multi-wavelength Rydberg electrometry quantum sensing. These results pave the path for integrated, compact, and scalable solutions for quantum sensing, computing and other atomic and trapped ion applications.

physics.optics↗

arXiv2025

Photonic chip-based optical frequency division with PZT-integrated soliton microcombs

Optical frequency division (OFD) produces low-noise microwave and millimeter-wave signals by transferring the exceptional stability of optical references to electronic frequency domains. Recent developments in integrated optical references and soliton microcombs have paved the way for miniaturizing OFD oscillators to chip scale. Critical to this realization is a rapid tunable frequency comb that is stabilized to the optical references, thereby coherently linking optical and electronic frequencies. In this work, we advance the on-chip OFD technology using an integrated high-speed PZT stress-optic actuator on the SiN soliton microcomb resonator. The integrated PZT actuator tunes the resonance frequency of the soliton-generating microresonator with a bandwidth exceeding 10s MHz and independently adjusts the soliton repetition rate without perturbing the frequency comb offset. Optical frequency division and low-noise mmWave generation are demonstrated by feedback control of the soliton repetition rate through the integrated PZT-actuator, and the soliton microcomb is stabilized to a pair of reference lasers that are locked to an integrated 4-meter SiN coil reference cavity. Our approach provides a fast, versatile and integrated control mechanism for OFD oscillators and their applications in advanced communications, sensing, and precise timing.

physics.optics↗

arXiv2025

Integrated Architecture for the Automated Generation and Coil Stabilization of a PZT-Enabled Microcomb

Silicon nitride Dissipative Kerr Soliton (DKS) microcombs have emerged as a future solution to bring metrological optical frequency comb capabilities into a photonic integrated platform with mass-scale fabrication benefits. Precision applications demand low comb line phase noise as well as high repetition rate stability, but current approaches to achieve this involve complex architectures, multiple lasers, and high-power components, which are challenging to integrate to the chip scale. To achieve this goal, new architectures are needed to simplify the comb generation, actuation, and pump laser requirements, while enabling chip-integrated solutions. Here we demonstrate a greatly simplified stabilized DKS comb architecture with a single laser and a single point electronic control of both the microcomb generation and its stabilization to a coil-resonator reference. The silicon nitride microcomb is integrated with a low power, broadband PZT actuator that is driven by a simple electronic control sequence that generates a soliton and stabilizes it to the 16-meter silicon nitride coil resonator. PZT-enabled control brings flexibility and simplicity to the soliton generation and stabilization using a single CW pump laser, resulting in significantly reduced electronic and optical infrastructure. We demonstrate coil-resonator locking which suppresses the 1 kHz frequency noise by 40 dB over the 35 nm wide comb spectrum, with comb line linewidths as low as 66 Hz and 108 GHz soliton repetition rate phase noise equivalent to -118 dBc/Hz when divided down to 10 GHz. The low power PZT actuator consumes nW bias power and the coil resonator allows flexible dual locking using arbitrary comb lines. These results show a clear path towards full chip integration of stabilized soliton microcombs with simplicity and versatility absent in other schemes.

physics.optics↗

arXiv2024

Kerr optical frequency division with integrated photonics for stable microwave and mmWave generation

Optical frequency division (OFD) has revolutionized microwave and mmWave generation and set spectral purity records owing to its unique capability to transfer high fractional stability from optical to electronic frequencies. Recently, rapid developments in integrated optical reference cavities and microresonator-based optical frequency combs (microcombs) have created a path to transform OFD technology to chip scale. Here, we demonstrate an ultra-low phase noise mmWave oscillator by leveraging integrated photonic components and Kerr optical frequency division. The oscillator derives its stability from an integrated CMOS-compatible SiN coil cavity, and the optical frequency division is achieved spontaneously through Kerr interaction between the injected reference lasers and soliton microcombs in the integrated SiN microresonator. Besides achieving record-low phase noise for integrated mmWave oscillators, our demonstration greatly simplifies the implementation of integrated OFD oscillators and could be useful in applications of Radar, spectroscopy, and astronomy.

physics.optics↗

arXiv2024

Anneal-free ultra-low loss silicon nitride integrated photonics

Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

physics.optics↗

arXiv2023

Chip-Scale, Sub-Hz Fundamental Sub-kHz Integral Linewidth 780 nm Laser through Self-Injection-Locking a Fabry-Pérot laser to an Ultra-High Q Integrated Resonator

Today's state of the art precision experiments in quantum, gravimetry, navigation, time keeping, and fundamental science have strict requirements on the level and spectral distribution of laser frequency noise. For example, the laser interaction with atoms and qubits requires ultra-low frequency noise at multiple offset frequencies due to hyperfine atomic transitions, motional sidebands, and fast pulse sequencing. Chip-scale integration of lasers that meet these requirements is essential for reliability, low-cost, and weight. Here, we demonstrate a significant advancement in atomic precision light sources by realizing a chip-scale, low-cost, 780 nm laser for rubidium atom applications with record-low 640 mHz (white noise floor at 0.2 Hz$^2$/Hz) fundamental and 732 Hz integral linewidths and a frequency noise that is multiple orders of magnitude lower than previous hybrid and heterogeneous self-injection locked 780 nm lasers and lower noise than bulk microresonator implementations. The laser is a Fabry-Pérot laser diode self-injection locked to an ultra-high Q photonic integrated silicon nitride resonator. This performance is enabled by a 145 million resonator Q with a 30 dB extinction ratio, the highest Q at 780 nm, to the best of our knowledge. We analyze the impact of our frequency noise on specific atomic applications including atomic frequency references, Rydberg quantum gates, and cold atom gravimeters. The photonic integrated resonator is fabricated using a CMOS foundry-compatible, wafer-scale process, with demonstrated integration of other components showing promise for a full system-on-a-chip. This performance is scalable to other visible atomic wavelengths, opening the door to a variety of transitions across many atomic species and enabling low-power, compact, ultra-low noise lasers impacting applications including quantum sensing, computing, clocks and more.

physics.optics↗

arXiv2022

Silicon nitride stress-optic microresonator modulator for optical control applications

The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining the planar, wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 um resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC to 20 MHz 3-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB ER and 7.1 million Q over the entire 4 GHz tuning range, a tuning efficiency of 200 MHz/V, and delivers the linearity required for control applications with 65.1 dBHz2/3 and 73.8 dBHz2/3 IMD3 SFDR at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a PDH lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, controllable optical frequency combs, low-power external cavity tunable lasers, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

physics.optics↗

arXiv2021

Photonic circuits for laser stabilization with ultra-low-loss and nonlinear resonators

Laser-frequency stabilization with on-chip photonic integrated circuits will provide compact, low cost solutions to realize spectrally pure laser sources. Developing high-performance and scalable lasers is critical for applications including quantum photonics, precision navigation and timing, spectroscopy, and high-capacity fiber communications. We demonstrate a significant advance in compact, stabilized lasers to achieve a record low integral emission linewidth and precision carrier stabilization by combining integrated waveguide nonlinear Brillouin and ultra-low loss waveguide reference resonators. Using a pair of 56.4 Million quality factor (Q) Si$_3$N$_4$ waveguide ring-resonators, we reduce the free running Brillouin laser linewidth by over an order of magnitude to 330 Hz integral linewidth and stabilize the carrier to 6.5$\times$10$^{-13}$ fractional frequency at 8 ms, reaching the cavity-intrinsic thermorefractive noise limit for frequencies down to 80 Hz. This work demonstrates the lowest linewidth and highest carrier stability achieved to date using planar, CMOS compatible photonic integrated resonators, to the best of our knowledge. These results pave the way to transfer stabilized laser technology from the tabletop to the chip-scale. This advance makes possible scaling the number of stabilized lasers and complexity of atomic and molecular experiments as well as reduced sensitivity to environmental disturbances and portable precision atomic, molecular and optical (AMO) solutions.

physics.optics↗

arXiv2021

Integrated Reference Cavity for Dual-mode Optical Thermometry and Frequency Stabilization

Optical frequency stabilization is a critical component for precision scientific systems including quantum sensing, precision metrology, and atomic timekeeping. Ultra-high quality factor photonic integrated optical resonators are a prime candidate for reducing their size, weight and cost as well as moving these systems on chip. However, integrated resonators suffer from temperature-dependent resonance drift due to the large thermal response as well as sensitivity to external environmental perturbations. Suppression of the cavity resonance drift can be achieved using precision interrogation of the cavity temperature through the dual-mode optical thermometry. This approach enables measurement of the cavity temperature change by detecting the resonance difference shift between two polarization or optical frequency modes. Yet this approach has to date only been demonstrated in bulk-optic whispering gallery mode and fiber resonators. In this paper, we implement dual-mode optical thermometry using dual polarization modes in a silicon nitride waveguide resonator for the first time, to the best of our knowledge. The temperature responsivity and sensitivity of the dual-mode TE/TM resonance difference is 180.7$\pm$2.5 MHz/K and 82.56 $μ$K, respectively, in a silicon nitride resonator with a 179.9E6 intrinsic TM mode Q factor and a 26.6E6 intrinsic TE mode Q factor. Frequency stabilization is demonstrated by locking a laser to the TM mode cavity resonance and applying the dual-mode resonance difference to a feedforward laser frequency drift correction circuit with a drift rate improvement to 0.31 kHz/s over the uncompensated 10.03 kHz/s drift rate. Allan deviation measurements with dual-mode feedforward-correction engaged shows that a fractional frequency instability of 9.6E-11 over 77 s can be achieved.

physics.ins-det↗

arXiv2021

Optically synchronized fiber links with spectrally pure integrated lasers

Precision frequency and phase synchronization between distinct fiber interconnected nodes is critical for a wide range of applications, including atomic timekeeping, quantum networking, database synchronization, ultra-high-capacity coherent optical communications and hyper-scale data centers. Today, many of these applications utilize precision, tabletop laser systems, and would benefit from integration in terms of reduced size, power, cost, and reliability. In this paper we report a record low 3x10^-4 rad^2 residual phase error variance for synchronization based on independent, spectrally pure, ultra-high mutual coherence, photonic integrated lasers. This performance is achieved with stimulated Brillouin scattering lasers that are stabilized to independent microcavity references, realizing sources with 30 Hz integral linewidth and a fractional frequency instability less than or equal to 2x10^-13 at 50 ms. This level of low phase noise and carrier stability enables a new type of optical-frequency-stabilized phase-locked loop (OFS-PLL) that operates with a less than 800 kHz loop bandwidth, eliminating traditional power consuming high bandwidth electronics and digital signal processors used to phase lock optical carriers. Additionally, we measure the residual phase error down to a received carrier power of -34 dBm, removing the need to transmit in-band or out-of-band synchronized carriers. These results highlight the promise for a path to spectrally pure, ultra-stable, integrated lasers for network synchronization, precision time distribution protocols, quantum-clock networks, and multiple-Terabit per second coherent DSP-free fiber-optic interconnects.

physics.optics↗