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Martin V. Holt

Publications and source records attributed to Martin V. Holt.

At least 19 recordsLinked to original sources

Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host

Semiconductor qubits, promising for quantum computation, inherit properties from their host lattice. Quantum dot spins, occupying the local lowest energy states in the conduction band, necessarily couple to structural disorder and interfaces. While silicon-based systems promise low noise alongside industrially compatible manufacturing, the growth of SiGe---a leading platform---unavoidably introduces lattice dislocations, inhomogeneous strain, and crosshatch patterns, expected to cause fluctuations between devices, qubit failure, and subsequently higher operational overhead. Through X-ray nano-structural mapping of an Intel Si/SiGe chip, we reveal, with 30$~$nm lateral and 200$~$nm functional depth resolution, how extended lattice defects introduced during growth propagate through the heterostructure, creating permanently distorted lattice planes and strain. We correlate these at the $\approx1~μ$m scale of a quantum dot device and calculate the impact on qubit energy spectra. We observe crosshatch fine structure and find that substrate miscut and growth correlate with the final crosshatch pattern.

cond-mat.mes-hall

DONUT: Physics-aware Machine Learning for Real-time X-ray Nanodiffraction Analysis

Coherent X-ray scattering techniques are critical for investigating the fundamental structural properties of materials at the nanoscale. While advancements have made these experiments more accessible, real-time analysis remains a significant bottleneck, often hindered by artifacts and computational demands. In scanning X-ray nanodiffraction microscopy, which is widely used to spatially resolve structural heterogeneities, this challenge is compounded by the convolution of the divergent beam with the sample's local structure. To address this, we introduce DONUT (Diffraction with Optics for Nanobeam by Unsupervised Training), a physics-aware neural network designed for the rapid and automated analysis of nanobeam diffraction data. By incorporating a differentiable geometric diffraction model directly into its architecture, DONUT learns to predict crystal lattice strain and orientation in real-time. Crucially, this is achieved without reliance on labeled datasets or pre-training, overcoming a fundamental limitation for supervised machine learning in X-ray science. We demonstrate experimentally that DONUT accurately extracts all features within the data over 200 times more efficiently than conventional fitting methods.

cs.LG

Homomorphic data compression for real time photon correlation analysis

The construction of highly coherent x-ray sources has enabled new research opportunities across the scientific landscape. The maximum raw data rate per beamline now exceeds 40 GB/s, posing unprecedented challenges for the online processing and offline storage of the big data. Such challenge is particularly prominent for x-ray photon correlation spectroscopy (XPCS), where real time analyses require simultaneous calculation on all the previously acquired data in the time series. We present a homomorphic compression scheme to effectively reduce the computational time and memory space required for XPCS analysis. Leveraging similarities in the mathematical expression between a matrix-based compression algorithm and the correlation calculation, our approach allows direct operation on the compressed data without their decompression. The lossy compression reduces the computational time by a factor of 10,000, enabling real time calculation of the correlation functions at kHz framerate. Our demonstration of a homomorphic compression of scientific data provides an effective solution to the big data challenge at coherent light sources. Beyond the example shown in this work, the framework can be extended to facilitate real-time operations directly on a compressed data stream for other techniques.

math.NA

X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3

Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of local microscopic distortions on the local Mott transition. Addressing these challenges demands structural characterizations at the relevant length scale. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a V2O3 thin film. Through temperature-dependent metal-insulator phase coexistence mapping, we report a variation in the local transition temperature of up to 7 K across the film and the presence of the transition hysteresis at the nanoscale. Furthermore, a detailed quantitative analysis demonstrates that the spatial heterogeneity of the transition is closely tied to the tilting of crystallographic planes in the pure insulating phase. Our work highlights the impact of local heterogeneity on the Mott transition and lays the groundwork for future innovations in harnessing strain heterogeneity within Mott systems for the next-generation computational technologies.

cond-mat.mtrl-sci

Deep Learning of Structural Morphology Imaged by Scanning X-ray Diffraction Microscopy

Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by the convergence angle of nanoscale focusing optics which creates simultaneous dependency of the far-field scattering data on three independent components of the local strain tensor - corresponding to dilation and two potential rigid body rotations of the unit cell. All three components are in principle resolvable through a spatially mapped sample tilt series however traditional data analysis is computationally expensive and prone to artifacts. In this study, we implement NanobeamNN, a convolutional neural network specifically tailored to the analysis of scanning probe X-ray microscopy data. NanobeamNN learns lattice strain and rotation angles from simulated diffraction of a focused X-ray nanobeam by an epitaxial thin film and can directly make reasonable predictions on experimental data without the need for additional fine-tuning. We demonstrate that this approach represents a significant advancement in computational speed over conventional methods, as well as a potential improvement in accuracy over the current standard.

physics.app-ph

High-resolution spatio-temporal strain imaging reveals loss mechanisms in a surface acoustic wave device

Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Stroboscopic full-field diffraction x-ray microscopy studies of a prototypical one-port resonator device revealed the existence of unanticipated acoustic loss. A non-uniform acoustic excitation in the active area was responsible for the substantial end and side leakages observed at the design frequency. Quantitative analysis of the strain amplitude using a wave decomposition method allowed the determination of several key device parameters. This high-resolution spatiotemporal strain imaging technique is, more generally, suited for studying nanophononics, specifically when the feature size is smaller than optical wavelengths. The strain sensitivity allows precise measurement of acoustic waves with picometer-scale amplitude.

physics.app-ph

Stroboscopic X-ray Diffraction Microscopy of Dynamic Strain in Diamond Thin-film Bulk Acoustic Resonators for Quantum Control of Nitrogen Vacancy Centers

Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This mechanism has been previously harnessed for unconventional quantum spin control, spin decoherence protection, and quantum sensing. Bulk-mode acoustic wave devices are also important in the microelectronics industry as microwave filters. A key challenge in both applications is a lack of appropriate operando microscopy tools for quantifying and visualizing gigahertz-frequency dynamic strain. In this work, we directly image acoustic strain within NV center-coupled diamond thin-film bulk acoustic wave resonators using stroboscopic scanning hard X-ray diffraction microscopy at the Advanced Photon Source. The far-field scattering patterns of the nano-focused X-ray diffraction encode strain information entirely through the illuminated thickness of the resonator. These patterns have a real-space spatial variation that is consistent with the bulk strain's expected modal distribution and a momentum-space angular variation from which the strain amplitude can be quantitatively deduced. We also perform optical measurements of strain-driven Rabi precession of the NV center spin ensemble, providing an additional quantitative measurement of the strain amplitude. As a result, we directly measure the NV spin-stress coupling parameter $b = 2.73(2)$ MHz/GPa by correlating these measurements at the same spatial position and applied microwave power. Our results demonstrate a unique technique for directly imaging AC lattice strain in micromechanical structures and provide a direct measurement of a fundamental constant for the NV center defect spin Hamiltonian.

cond-mat.mtrl-sci

Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control

With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er$^{3+}$ emitters into a thin film TiO$_2$ platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er$^{3+}$ emitters in TiO$_2$ thin films on Si. Using both nanoscale X-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of the Er:TiO$_2$ is converted to rutile, the Er$^{3+}$ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.

physics.app-ph

Heterogeneous field response of hierarchical polar laminates in relaxor ferroelectrics

Relaxor ferroelectrics are a class of materials that are widely perceived as deriving their exotic properties from structural heterogeneities. Understanding the microscopic origin of the superior electromechanical response requires knowledge not only concerning the formation of polar nanodomains (PNDs) built from individual atoms but more importantly the spatial distribution of PNDs over longer distances. The mesoscale PND arrangement is shaped by the interactions between these domains and, in turn, dictates the electric-field driven PND response directly relevant to the macroscopic material properties. Here, we show the emergence of mesoscale lattice order that we name "polar laminates" in the canonical relaxor ferroelectric 0.68PbMg$_{1/3}$Nb$_{2/3}$O$_{3}$-0.32PbTiO$_{3}$ (PMN-0.32PT) using X-ray coherent nano-diffraction. These laminates are nematic with a size of ~350 nm and arise from the staggered arrangement of ~13 nm monoclinic PNDs along the <110> of the pseudocubic lattice. The spatial distribution of c-axis strain is directly correlated with the tilting of the PNDs and is most prominent between the laminates. Further operando nano-diffraction studies demonstrate heterogeneous electric-field-driven responses. The most active regions tend to reside inside the laminates while the spatial pinning centers are between the laminates. This observation reveals the hierarchical assembly of lattice order as a novel form of electron and lattice self-organization in heterogenous materials and establishes the role of such mesoscale spatial arrangement in connecting the nanoscale heterogeneity and macroscopic material properties. These findings provide a guiding principle for the design and optimization of future relaxors and may shed light on the existence of similar behavior in a wide range of quantum and functional materials.

cond-mat.mtrl-sci

Directional Detection of Dark Matter Using Solid-State Quantum Sensing

Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high-density target material. A detector of this type operates in a hybrid mode. The WIMP or neutrino-induced nuclear recoil is detected using real-time charge, phonon, or photon collection. The directional signal, however, is imprinted as a durable sub-micron damage track in the lattice structure. This directional signal can be read out by a variety of atomic physics techniques, from point defect quantum sensing to x-ray microscopy. In this white paper, we present the detector principle and review the status of the experimental techniques required for directional readout of nuclear recoil tracks. Specifically, we focus on diamond as a target material; it is both a leading platform for emerging quantum technologies and a promising component of next-generation semiconductor electronics. Based on the development and demonstration of directional readout in diamond over the next decade, a future WIMP detector will leverage or motivate advances in multiple disciplines towards precision dark matter and neutrino physics.

physics.ins-det

X-ray Nano-imaging of Defects in Thin Film Catalysts via Cluster Analysis

Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects remain challenging to detect and localize using nanodiffraction, due to their weak diffuse scattering. Here we apply an unsupervised machine learning clustering algorithm to isolate the low-intensity diffuse scattering in as-grown and alkaline-treated thin epitaxially strained SIO films. We pinpoint the defect locations, find additional strain variation in the morphology of electrochemically cycled SIO, and interpret the defect type by analyzing the diffraction profile through clustering. Our findings demonstrate the use of a machine learning clustering algorithm for identifying and characterizing hard-to-find crystallographic defects in thin films of electrocatalysts and highlight the potential to study electrochemical reactions at defect sites in operando experiments.

cond-mat.mtrl-sci

Scanning X-ray Diffraction Microscopy for Diamond Quantum Sensing

Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning X-ray diffraction microscopy to quantitatively measure crystal deformation from defects in diamond with high spatial and strain resolution. Combining information from multiple Bragg angles allows stereoscopic three-dimensional modeling of strain feature geometry; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen vacancy (NV) centers in the diamond. Our results demonstrate both strain and spatial resolution sufficient for directional detection of dark matter via X-ray measurement of crystal strain, and provide a promising tool for diamond growth analysis and improvement of defect-based sensing.

physics.app-ph

Deep learning at the edge enables real-time streaming ptychographic imaging

Coherent microscopy techniques provide an unparalleled multi-scale view of materials across scientific and technological fields, from structural materials to quantum devices, from integrated circuits to biological cells. Driven by the construction of brighter sources and high-rate detectors, coherent X-ray microscopy methods like ptychography are poised to revolutionize nanoscale materials characterization. However, associated significant increases in data and compute needs mean that conventional approaches no longer suffice for recovering sample images in real-time from high-speed coherent imaging experiments. Here, we demonstrate a workflow that leverages artificial intelligence at the edge and high-performance computing to enable real-time inversion on X-ray ptychography data streamed directly from a detector at up to 2 kHz. The proposed AI-enabled workflow eliminates the sampling constraints imposed by traditional ptychography, allowing low dose imaging using orders of magnitude less data than required by traditional methods.

cs.LG

Proton distribution visualization in perovskite nickelate devices utilizing nanofocused X-rays

We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small lattice distortion in the doped regions. Together, our results directly show that the knob which proton doping modifies is the electronic valency, and not the crystal lattice. The studies are relevant to on-going efforts to disentangle structural and electronic effects across metal-insulator phase transitions in correlated oxides.

cond-mat.mtrl-sci

Real-time sparse-sampled Ptychographic imaging through deep neural networks

Ptychography has rapidly grown in the fields of X-ray and electron imaging for its unprecedented ability to achieve nano or atomic scale resolution while simultaneously retrieving chemical or magnetic information from a sample. A ptychographic reconstruction is achieved by means of solving a complex inverse problem that imposes constraints both on the acquisition and on the analysis of the data, which typically precludes real-time imaging due to computational cost involved in solving this inverse problem. In this work we propose PtychoNN, a novel approach to solve the ptychography reconstruction problem based on deep convolutional neural networks. We demonstrate how the proposed method can be used to predict real-space structure and phase at each scan point solely from the corresponding far-field diffraction data. The presented results demonstrate how PtychoNN can effectively be used on experimental data, being able to generate high quality reconstructions of a sample up to hundreds of times faster than state-of-the-art ptychography reconstruction solutions once trained. By surpassing the typical constraints of iterative model-based methods, we can significantly relax the data acquisition sampling conditions and produce equally satisfactory reconstructions. Besides drastically accelerating acquisition and analysis, this capability can enable new imaging scenarios that were not possible before, in cases of dose sensitive, dynamic and extremely voluminous samples.

eess.IV

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

cond-mat.mes-hall

Three-dimensional phonon population anisotropy in silicon nanomembranes

Nanoscale single-crystals possess modified phonon dispersions due to the truncation of the crystal. The introduction of surfaces alters the population of phonons relative to the bulk and introduces anisotropy arising from the breaking of translational symmetry. Such modifications exist throughout the Brillouin zone, even in structures with dimensions of several nanometers, posing a challenge to the characterization of vibrational properties and leading to uncertainty in predicting the thermal, optical, and electronic properties of nanomaterials. Synchrotron x-ray thermal diffuse scattering studies find that freestanding Si nanomembranes with thicknesses as large as 21 nm exhibit a higher scattering intensity per unit thickness than bulk silicon. In addition, the anisotropy arising from the finite thickness of these membranes produces particularly intense scattering along reciprocal-space directions normal to the membrane surface compared to corresponding in-plane directions. These results reveal the dimensions at which calculations of materials properties and device characteristics based on bulk phonon dispersions require consideration of the nanoscale size of the crystal.

cond-mat.mes-hall

Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale

Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.

cond-mat.str-el