arXiv subjects
Publications and source records attributed to Masahiro Yoshita.
We measured absorption spectra of T-shaped quantum wires at room temperature using waveguide-transmission spectroscopy. Strong and narrow room-temperature one-dimensional-exciton absorption peak was observed, which shows peak modal absorption coefficient of 160 cm$^{-1}$ per 20 wires with $Γ$-factor of $4.3\times10^{-3}$, width of 7.2 meV, and strong polarization anisotropy.
A recent single quantum wire is of sufficient quality to reveal new details of the photoluminescence (PL) evolution with increasing electron--hole (e--h) pair density. At a pair density of 3.6 $\times$ 10$^{3}$ cm$^{-1}$, the PL is characteristic of biexcitons shifted below the exciton peak by the 2.8-meV biexciton binding. At the pair density of 1.2 $\times$ 10$^{5}$ cm$^{-1}$, the biexciton peak broadens without energy shift to an e--h plasma. At all pair densities up to 30 K, neither the exciton peak nor the one-dimensional (1D) continuum edge shows any shift. In contrast to prevailing theories, the low-energy edge of the plasma PL line never crosses the exciton peak and never makes contact with the 1D e--h continuum.
We measured the absorption spectrum of a single T-shaped, 14x6 nm lateral-sized quantum wire embedded in an optical waveguide using waveguide-transmission spectroscopy at 5 K. In spite of its small volume, the one-dimensional-exciton ground state shows a large absorption coefficient of 80 /cm, or a 98 % absorption probability for a single pass of the 500-um-long waveguide.
We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations, only single-particle excitations (SPEs) were observed in intersubband Raman scattering, which was confirmed by the well-width dependence of Raman spectra. We found characteristic variations in Raman shift and line shape for SPEs with incident photon energy in the narrow QWs.
We measured polarization-dependent photoluminescence-excitation spectra of highly uniform T-shaped quantum wires at 5 K. We attribute one peak to the 1D-exciton ground state and the continuous absorption band to 1D continuum states. These had similar polarization-dependences. We also observed some other peaks above the 1D-exciton ground state and attribute them to exciton states consisting of excited hole subbands. These results show good agreement with a model calculation of a single electron-hole pair in T-shaped geometry with exact diagonalizations of the Coulomb interaction.
Spatially and spectrally resolved microscopic images of spontaneous and stimulated emissions are imaged at the mirror facets of a GaAs T-shaped quantum wire laser with high uniformity. Laser emission from the one-dimensional ground state reveals a circular image located at the core of a T-shaped optical waveguide but significantly smaller in area than the low power spontaneous emission from the same waveguide. These images unambiguously allow assignment of all spontaneous and laser emissions to the wire ground state and respective intersecting wells in the structure.
A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum well and a 6 nm GaAs quantum well, and is embedded in a 1-D single-mode optical waveguide. We observe single-mode lasing from the quantum wire ground state by optical pumping. The laser operates from 5 to 60 K, and has a low threshold pumping power of 5 mW at 5 K.
High-quality T-shaped quantum wires are fabricated by cleaved-edge overgrowth with the molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Characterization by micro-photoluminescence (PL) and PL excitation (PLE) spectroscopy at 5 K reveals high uniformity, a sharp spectral width, and a small Stokes shift of one-dimensional (1-D) excitons. The PLE spectrum for 1-D states shows a large peak of ground-state excitons and a small absorption band ascribed to 1-D continuum states with an onset at 11 meV above the exciton peak.
We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that corresponds to the transport relaxation time related to electron mobility. Numerical calculations for GaAs QWs clarify the different contributions of each individual scattering mechanism to absorption linewidth and transport broadening. Interface roughness scattering contributes about an order of magnitude more to linewidth than to transport broadening, because the contribution from the intrasubband scattering in the first excited subband is much larger than that in the ground subband. On the other hand, LO phonon scattering (at room temperature) and ionized impurity scattering contribute much less to linewidth than to transport broadening. LA phonon scattering makes comparable contributions to linewidth and transport broadening, and so does alloy disorder scattering. The combination of these contributions with significantly different characteristics makes the absolute values of linewidth and transport broadening very different, and leads to the apparent lack of correlation between them when a parameter, such as temperature or alloy composition, is changed. Our numerical calculations can quantitatively explain the previously reported experimental results.
A multi-quantum wire laser operating in the 1-D ground state has been achieved in a very high uniformity structure that shows free exciton emission with unprecedented narrow width and low lasing threshold. Under optical pumping the spontaneous emission evolves from a sharp free exciton peak to a red-shifted broad band. The lasing photon energy occurs about 5 meV below the free exciton. The observed shift excludes free excitons in lasing and our results show that Coulomb interactions in the 1-D electron-hole system shift the spontaneous emission and play significant roles in laser gain.
By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic roughness. Micro-photoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of $μ$m in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.
We measured images and Fourier images of fluorescence for 0.11- and 0.22-$μ$m-diameter dye-doped polystyrene micro-sphere beads on a solid immersion lens, and experimentally verified strongly-angle-dependent fluorescence intensities due to efficient near-field optical coupling in solid immersion fluorescence microscopy. The results are interpreted in comparison with calculated emission patterns of an emission dipole placed near a solid surface, which establish a basic model for high-collection efficiency in solid-immersion fluorescence microscopy.
We demonstrate strong one dimensional (1-D) many-body interaction effects in photoluminescence (PL) in a GaAs single quantum wire of unprecedented optical quality, where 1-D electron plasma densities are controlled via electrical gating. We observed PL of 1-D charged excitons with large binding energy of 2.3 meV relative to the neutral excitons, and its evolution to a Fermi-edge singularity at high electron density. Furthermore, we find a strong band-gap renormalization in the 1-D wire, or a large red-shift of PL with increased electron plasma density. Such a large PL red-shift is not observed when we create a high density neutral electron-hole plasma in the same wire, due probably to cancellation of the Coulomb interaction energy in the neutral plasma.