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Quantum wells with atomically smooth interfaces

Masahiro Yoshita·Hidefumi Akiyama·Loren N. Pfeiffer·Ken W. West
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Abstract

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic roughness. Micro-photoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of $μ$m in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.

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Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West. 2002-05-09. Quantum wells with atomically smooth interfaces. https://doi.org/10.1063/1.1490144

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