arXiv subjects

Massimiliano Stengel

Publications and source records attributed to Massimiliano Stengel.

69 records · Page 4Linked to original sources

arXiv2012

Ferroelectricity in ultrathin film capacitors

Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.

cond-mat.mtrl-sci↗

arXiv2012

Electrical properties of improper ferroelectrics from first principles

We study the interplay of structural and polar distortions in hexagonal YMnO3 and short-period PbTiO3/SrTiO3 superlattices by means of first-principles calculations at constrained electric displacement field D. We find that in YMnO3 the tilts of the oxygen polyhedra produce a robustly polar ground state, which persists at any choice of the electrical boundary conditions. Conversely, in PTO/STO the antiferrodistortive instabilities alone do not break inversion symmetry, and open-circuit bundary conditions restore a non-polar state. We suggest that this qualitative difference naturally provides a route to rationalizing the concept of "improper ferroelectricity" from the point of view of first-principles theory. We discuss the implications of our arguments for the design of novel multiferroic materials with enhanced functionalities, and for the symmetry analysis of the phase transitions.

cond-mat.mtrl-sci↗

arXiv2012

Electrochemical ferroelectric switching: The origin of polarization reversal in ultrathin films

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show that the system does not polarize unless charged defects or adsorbates form at the surface. We propose electrochemical processes as the most likely origin of this charge. The ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film. This, in turn, alters the band alignment at the bottom electrode interface, explaining the observed tunneling electroresistance. Our conclusions are supported by energetics calculated for varied electrochemical scenarios.

cond-mat.mes-hall↗

arXiv2011

First-Principles Modeling of Pt/LaAlO3/SrTiO3 Capacitors Under an External Bias Potential

We study the electrical properties of Pt/LaAlO3/SrTiO3 capacitors under the action of an external bias potential, using first-principles simulations performed at constrained electric displacement field. A complete set of band diagrams, together with the relevant electrical characteristics (capacitance and built-in fields), are determined as a function of LaAlO3 thickness and the applied potential.We find that the internal field in LaAlO3 monotonically decreases with increasing thickness; hence, the occurrence of spontaneous Zener tunneling is ruled out in this system.We discuss the implications of our results in the light of recent experimental observations on biased LaAlO3/SrTiO3 junctions involving metallic top electrodes.

cond-mat.mtrl-sci↗

arXiv2011

Electrostatic stability of insulating surfaces: Theory and applications

We analyze the electrostatic stability of insulating surfaces in the framework of the bulk modern theory of polarization. We show that heuristic arguments based on a fully ionic limit find formal justification at the microscopic level, even in solids where the bonding has a mixed ionic/covalent character. Based on these arguments, we propose simple criteria to construct arbitrary non-polar terminations of a given bulk crystal. We illustrate our ideas by performing model calculations of several LaAlO3 and SrTiO3 surfaces. We find, in the case of ideal LaAlO3 surfaces, that cleavage along a higher-index (n10) direction is energetically favorable compared to the polar (100) orientation. In the presence of external adsorbates or defects the picture can change dramatically, as we demonstrate in the case of H2O/LaAlO3(100).

cond-mat.mtrl-sci↗

arXiv2011

Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles

Based on recent advances in first-principles theory, we develop a general model of the band offset at metal/ferroelectric interfaces. We show that, depending on the polarization of the film, a pathological regime might occur where the metallic carriers populate the energy bands of the insulator, making it metallic. As the most common approximations of density functional theory are affected by a systematic underestimation of the fundamental band gap of insulators, this scenario is likely to be an artifact of the simulation. We provide a number of rigorous criteria, together with extensive practical examples, to systematically identify this problematic situation in the calculated electronic and structural properties of ferroelectric systems. We discuss our findings in the context of earlier literature studies, where the issues described in this work have often been overlooked. We also discuss formal analogies to the physics of polarity compensation at LaAlO3/SrTiO3 interfaces, and suggest promising avenues for future research.

cond-mat.mtrl-sci↗

arXiv2010

First-principles modeling of electrostatically doped perovskite systems

Macroscopically, confined electron gases at polar oxide interfaces are rationalized within the simple "polar catastrophe" model. At the microscopic level, however, many other effects such as electric fields, structural distortions and quantum-mechanical interactions enter into play. Here we show how to bridge the gap between these two length scales, by combining the accuracy of first-principles methods with the conceptual simplicity of model Hamiltonian approaches. To demonstrate our strategy, we address the equilibrium distribution of the compensating free carriers at polar LaAlO3/SrTiO3 interfaces. Remarkably, a model including only calculated bulk properties of SrTiO3 and no adjustable parameters accurately reproduces our full first-principles results. Our strategy provides a unified description of charge compensation mechanisms in SrTiO3-based systems.

cond-mat.mtrl-sci↗

arXiv2009

First-principles study of high-field piezoelectricity in tetragonal PbTiO3

We calculate from first principles the nonlinear piezoelectric response of ferroelectric PbTiO3 for the case of a polarization-enhancing electric field applied along the tetragonal axis. We focus mainly on the case of fixed in-plane lattice constants, corresponding to epitaxially constrained thin films. We find that the dependence of the c/a ratio on electric field is almost linear in the range up to 500 MV/m, with little saturation. This result contrasts with expectations from Landau-Devonshire approaches based on experimental results obtained at lower fields, but is in qualitative agreement with a recent experiment in which higher fields were attained using pulsed-field methods. We also study cases in which the in-plane epitaxy constraint is removed, or an artificial negative pressure is applied, or both. These calculations demonstrate that PbTiO3 can show a strikingly non-linear piezoelectric response under modified elastic boundary conditions.

cond-mat.mtrl-sci↗

arXiv2009

Berry-phase theory of polar discontinuities at oxide-oxide interfaces

In the framework of the modern theory of polarization, we rigorously establish the microscopic nature of the electric displacement field D. In particular, we show that the longitudinal component of D is preserved at a coherent and insulating interface. To motivate and elucidate our derivation, we use the example of LAO/STO interfaces and superlattices, where the validity of the above conservation law is not immediately obvious. Our results generalize the "locality principle" of constrained-D density functional theory to the first-principles modeling of charge-mismatched systems.

cond-mat.mtrl-sci↗

arXiv2009

First-principles modeling of ferroelectric capacitors via constrained-D calculations

First-principles modeling of ferroelectric capacitors presents several technical challenges, due to the coexistence of metallic electrodes, long-range electrostatic forces and short-range interface chemistry. Here we show how these aspects can be efficiently and accurately rationalized by using a finite-field density-functional theory formalism in which the fundamental electrical variable is the displacement field D. By performing calculations on model Pt/BaTiO3/Pt and Au/BaZrO3/Au capacitors we demonstrate how the interface-specific and bulk-specific properties can be identified and rigorously separated. Then, we show how the electrical properties of capacitors of arbitrary thickness and geometry (symmetric or asymmetric) can be readily reconstructed by using such information. Finally, we show how useful observables such as polarization and dielectric, piezoelectric and electrostrictive coefficients are easily evaluated as a byproduct of the above procedure. We apply this methodology to elucidate the relationship between chemical bonding, Schottky barriers and ferroelectric polarization at simple-metal/oxide interfaces. We find that BO2-electrode interfaces behave analogously to a layer of linear dielectric put in series with a bulk-like perovskite film, while a significant non-linear effect occurs at AO-electrode interfaces.

cond-mat.mtrl-sci↗

arXiv2008

Enhancement of ferroelectricity at metal/oxide interfaces

By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric devices. We show that, contrary to the established interpretation, the interfacial capacitance depends crucially on the local chemical environment of the interface through the force constants of the metal-oxide bonds, and is not necessarily related to the bulk screening properties of the electrode material. In particular, in the case of interfaces between AO-terminated perovskites and simple metals, we demonstrate a novel mechanism of "interfacial ferroelectricity" that produces an overall enhancement of the ferroelectric instability of the film, rather than a suppression as is usually assumed. The resulting "negative dead layer" suggests a route to thin-film ferroelectric devices that are free of deleterious size effects.

cond-mat.mtrl-sci↗

arXiv2008

Electric displacement as the fundamental variable in electronic-structure calculations

Finite-field calculations in periodic insulators are technically and conceptually challenging, due to fundamental problems in defining polarization in extended solids. While significant progress has been made recently with the establishment of techniques to fix the electric field E or the macroscopic polarization P in first-principles calculations, both methods lack the ease of use and conceptual clarity of standard zero-field calculations. Here we develop a new formalism in which the electric displacement D, rather than E or P, is the fundamental electrical variable. Fixing D has the intuitive interpretation of imposing open-circuit electrical boundary conditions, which is particularly useful in studying ferroelectric systems. Furthermore, the analogy to open-circuit capacitors suggests an appealing reformulation in terms of free charges and potentials, which dramatically simplifies the treatment of stresses and strains. Using PbTiO3 as an example, we show that our technique allows full control over the electrical variables within the density functional formalism.

cond-mat.mtrl-sci↗

arXiv2008

Predicting polarization and nonlinear dielectric response of arbitrary perovskite superlattice sequences

We carry out first-principles calculations of the nonlinear dielectric response of short-period ferroelectric superlattices. We compute and store not only the total polarization, but also the Wannier-based polarizations of individual atomic layers, as a function of electric displacement field, and use this information to construct a model capable of predicting the nonlinear dielectric response of an arbitrary superlattice sequence. We demonstrate the successful application of our approach to superlattices composed of SrTiO$_3$, CaTiO$_3$, and BaTiO$_3$ layers.

cond-mat.mtrl-sci↗

arXiv2007

Self-interaction correction with Wannier functions

We describe the behavior of the Perdew-Zunger self-interaction-corrected local density approximation (SIC-LDA) functional when implemented in a plane-wave pseudopotential formalism with Wannier functions. Prototypical semiconductors and wide-bandgap oxides show a large overcorrection of the LDA bandgap. Application to transition-metal oxides and elements with d electrons is hindered by a serious breaking of the spherical symmetry, which appears even in a closed shell free atom. Our results indicate that, when all spherical approximations are lifted, the general applicability of orbital-dependent potentials is very limited and should be reconsidered in favor of rotationally invariant functionals.

cond-mat.other↗

arXiv2005

Accurate polarization within a unified Wannier function formalism

We present an alternative formalism for calculating the maximally localized Wannier functions in crystalline solids, obtaining an expression which is extremely simple and general. In particular, our scheme is exactly invariant under Brillouin zone folding, and therefore it extends trivially to the Gamma-point case. We study the convergence properties of the Wannier functions, their quadratic spread and centers as obtained by our simplified technique. We show how this convergence can be drastically improved by a simple and inexpensive ``refinement'' step, which allows for very efficient and accurate calculations of the polarization in zero external field.

cond-mat.mtrl-sci↗