Massimo Zimbone | Searcharxiv

arXiv2021

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.

cond-mat.mtrl-sci↗

arXiv2021

Thermal Annealing of High Dose P Implantation in 4H-SiC

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first, 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one, at 1500 °C for times between 4 hour and 14 hour, were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

cond-mat.mtrl-sci↗