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arXiv · 2104.12467

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Massimo Zimbone·Nicolo Piluso·Grazia Litrico·Roberta Nipoti·Riccardo Reitano·MariaConcetta Canino·Maria Ausilia Di Stefano·Simona Lorenti·Francesco La Via
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Abstract

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750{\deg}C, 1h) followed by a lower temperature one (1500{\deg}C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.

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Massimo Zimbone, Nicolo Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, MariaConcetta Canino, Maria Ausilia Di Stefano, Simona Lorenti, Francesco La Via. 2021-04-26. Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET. https://arxiv.org/abs/2104.12467

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