arXiv subjects

Matthew Matzelle

Publications and source records attributed to Matthew Matzelle.

7 recordsLinked to original sources

arXiv2025

Giant Shift Current in Electrically-Tunable Superlattice Bilayer Graphene

Recent introduction of superlattice potentials has opened new avenues for engineering tunable electronic band structures featuring topologically nontrivial moir\'{e}-like bands. Here we consider optoelectronic properties of Bernal-stacked graphene subjected to a superlattice potential either electrostatically or through lattice twisting to show that it exhibits a giant shift current response that is orders of magnitude larger than existing predictions in twisted mulitlayer systems. Effects of gate voltage and the strength and phase of the superlattice potential on the shift current are delineated systematically across various topological regimes. Our study gives insight into the nature of nonlinear responses of materials and how these responses could be optimized by tuning the superlattice potential.

cond-mat.mes-hall↗

arXiv2025

Diverse electronic topography in a distorted kagome metal LaTi3Bi4

Recent reports on a family of kagome metals of the form LnTi3Bi4 (Ln = Lanthanide) has stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities. In this manuscript, we use angle resolved photoemission spectroscopy measurements in combination with density functional theory calculations to investigate the electronic structure of a newly discovered kagome metal LaTi3Bi4. Our results reveal multiple van Hove singularities (VHSs) with one VHS located in the vicinity of the Fermi level. We clearly observe two flat bands, which originate from the destructive interference of wave functions within the Ti kagome motif. These flat bands and VHSs originate from Ti d orbitals and are very responsive to the polarization of the incident beam. We notice a significant anisotropy in the electronic structure, resulting from the breaking of six fold rotational symmetry in this material. Our findings demonstrate this new family of Ti based kagome material as a promising platform to explore novel emerging phenomena in the wider LnTi3Bi4 (Ln= lanthanide) family of materials.

cond-mat.mtrl-sci↗

arXiv2023

Observation of multiple flat bands and van Hove singularities in the distorted kagome metal NdTi3Bi4

Kagome materials have attracted enormous research interest recently owing to their diverse topological phases and manifestation of electronic correlation. Here, we present the electronic structure of a distorted ferromagnetic kagome metal, NdTi3Bi4, exhibiting a transition temperature of 9 K. Our investigation employs a combination of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. We discover the presence of two flat bands which are found to originate from the kagome structure formed by Ti atoms with major contribution from Ti dxy and Ti dx2-y2 orbitals. We also observed multiple van Hove singularities (VHSs) in its electronic structure, with one VHS lying near the Fermi level. The ARPES data reveals the existence of Dirac cone at the K point, a finding which is corroborated by our DFT calculations. These findings present detailed electronic structure capable of hosting correlation-driven phenomenon in this novel ferromagnetic kagome metal.

cond-mat.mtrl-sci↗

arXiv2023

Diverse electronic landscape of the kagome metal YbTi3Bi4

Kagome lattices have emerged as an ideal platform for exploring exotic quantum phenomena in materials. Here, we report the discovery of Ti-based kagome metal YbTi3Bi4 which we characterize using angle-resolved photoemission spectroscopy (ARPES) and magneto-transport, in combination with density functional theory calculations. Our ARPES results reveal the complex fermiology of YbTi3Bi4 and provide spectroscopic evidence of four flat bands. Our measurements also show the presence of multiple van Hove singularities originating from Ti 3d orbitals and a linearly-dispersing gapped Dirac-like bulk state at the K point in accord with our theoretical calculations. Our study establishes YbTi3Bi4 as a platform for exploring exotic phases in the wider LnTi3Bi4 (Ln= lanthanide) family of materials.

cond-mat.mes-hall↗

arXiv2022

Critical role of magnetic moments on lattice dynamics in YBa${}_{2}$Cu${}_{3}$O${}_{6}$

The role of lattice dynamics in unconventional high-temperature superconductivity is still vigorously debated. Theoretical insights into this problem have long been prevented by the absence of an accurate first-principles description of the combined electronic, magnetic, and lattice degrees of freedom. Utilizing the recently constructed r$^2$SCAN density functional that stabilizes the antiferromagnetic (AFM) state of the pristine oxide YBa$_2$Cu$_3$O$_6$, we faithfully reproduce the experimental dispersion of key phonon modes. We further find significant magnetoelastic coupling in numerous high energy Cu-O bond stretching optical branches, where the AFM results improve over the soft non-magnetic phonon bands.

cond-mat.supr-con↗

arXiv2021

Antiferromagnetic VdW Phase at the Interface of Sputtered Topological Insulator/Ferromagnet-Bi2Te3/Ni80Fe20 Heterostructures

Magnetic ordering in topological insulators (TI) is crucial for breaking time-reversal symmetry (TRS) and thereby opening a gap in the topological surface states (TSSs) [1-6], which is the key for realizing useful topological properties such as the quantum anomalous Hall (QAH) effect, axion insulator state and the topological magnetoelectric effect. Combining TIs with magnetic materials can be expected to yield interfaces [26-28] with unique topological and magnetic phases but such interfaces largely remain unexplored. Here, we report the discovery of a novel antiferromagnetic (AFM) Van der Waals (VdW) phase at the interface of a sputtered c-axis oriented TI/FM (Bi2Te3/Ni80Fe20) heterostructure due to the formation of a Ni-intercalated Bi2Te3 VdW interfacial layer. The TI/FM heterostructure is shown to possess a significant spontaneous exchange bias and the presence of an AFM order at the interface via measurements of the hysteresis loop as well as the observation of compensated magnetic moments at the interface using polarized neutron reflectometry (PNR). An in-depth analysis of the structural and chemical properties of the interfacial AFM phase was carried out using selected area electron diffraction (SAED), electron energy loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS). These studies show evidence of solid-state reaction between the intercalated Ni atoms and Bi2Te3 layers and of the formation of topologically nontrivial magnetic VdW compounds. The N\'eel temperature of the interfacial AFM phase is 63 K, which is higher than that of typical magnetic topological insulators [53]. Our study shows how industrial CMOS-process-compatible sputtered TI/FM heterostructures can provide a novel materials platform for exploring the emergence of interfacial topological magnetic phases and high-temperature topological magnetic states.

cond-mat.mtrl-sci↗

arXiv2020

Fully-Compensated Ferrimagnetic Spin Filter Materials within the Cr$\textit{M}\textit{N}$Al Equiatomic Quaternary Heusler Alloys

XX'YZ equiatomic quaternary Heusler alloys (EQHA's) containing Cr, Al, and select Group IVB elements ($\textit{M}$ = Ti, Zr, Hf) and Group VB elements ($\textit{N}$ = V, Nb, Ta) were studied using state-of-the-art density functional theory to determine their effectiveness in spintronic applications. Each alloy is classified based on their spin-dependent electronic structure as a half-metal, a spin gapless semiconductor, or a spin filter material. We predict several new fully-compensated ferrimagnetic spin filter materials with small electronic gaps and large exchange splitting allowing for robust spin polarization with small resistance. CrVZrAl, CrVHfAl, CrTiNbAl, and CrTiTaAl are identified as particularly robust spin filter candidates with an exchange splitting of $\sim 0.20$ eV. In particular, CrTiNbAl and CrTiTaAl have exceptionally small band gaps of $\sim 0.10$ eV. Moreover, in these compounds, a spin asymmetric electronic band gap is maintained in 2 of 3 possible atomic arrangements they can take, making the electronic properties less susceptible to random site disorder. In addition, hydrostatic stress is applied to a subset of the studied compounds in order to determine the stability and tunability of the various electronic phases. Specifically, we find the CrAlV$\textit{M}$ subfamily of compounds to be exceptionally sensitive to hydrostatic stress, yielding transitions between all spin-dependent electronic phases.

cond-mat.mtrl-sci↗