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Matthias C. Löbl

Publications and source records attributed to Matthias C. Löbl.

24 records · Page 2Linked to original sources

Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots

A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over $μ$m-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.

cond-mat.mes-hall↗

A gated quantum dot far in the strong-coupling regime of cavity-QED at optical frequencies

The strong-coupling regime of cavity-quantum-electrodynamics (cQED) represents light-matter interaction at the fully quantum level. Adding a single photon shifts the resonance frequencies, a profound nonlinearity. cQED is a test-bed of quantum optics and the basis of photon-photon and atom-atom entangling gates. At microwave frequencies, success in cQED has had a transformative effect. At optical frequencies, the gates are potentially much faster and the photons can propagate over long distances and be easily detected, ideal features for quantum networks. Following pioneering work on single atoms, solid-state implementations are important for developing practicable quantum technology. Here, we embed a semiconductor quantum dot in a microcavity. The microcavity has a $\mathcal{Q}$-factor close to $10^{6}$ and contains a charge-tunable quantum dot with close-to-transform-limited optical linewidth. The exciton-photon coupling rate $g$ exceeds both the photon decay rate $κ$ and exciton decay rate $γ$ by a large margin ($g/γ=14$, $g/κ=5.3$); the cooperativity is $C=2g^{2}/(γκ)=150$, the $β$-factor 99.7%. We observe pronounced vacuum Rabi oscillations in the time-domain, photon blockade at a one-photon resonance, and highly bunched photon statistics at a two-photon resonance. We use the change in photon statistics as a sensitive spectral probe of transitions between the first and second rungs of the Jaynes-Cummings ladder. All experiments can be described quantitatively with the Jaynes-Cummings model despite the complexity of the solid-state environment. We propose this system as a platform to develop optical-cQED for quantum technology, for instance a photon-photon entangling gate.

quant-ph↗

Excitons in InGaAs Quantum Dots without Electron Wetting Layer States

The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantum communication. One significant drawback of the SK-mode is the wetting layer (WL). The WL results in a continuum rather close in energy to the QD-confined-states. The WL-states lead to unwanted scattering and dephasing processes of QD-excitons. Here, we report that a slight modification to the SK-growth-protocol of InAs on GaAs -- we add a monolayer of AlAs following InAs QD formation -- results in a radical change to the QD-excitons. Extensive characterisation demonstrates that this additional layer eliminates the WL-continuum for electrons enabling the creation of highly charged excitons where up to six electrons occupy the same QD. Single QDs grown with this protocol exhibit optical linewidths matching those of the very best SK QDs making them an attractive alternative to standard InGaAs QDs.

cond-mat.mes-hall↗

Quantum optics with near lifetime-limited quantum-dot transitions in a nanophotonic waveguide

Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise is of importance and the influence of photonic nanostructures on the broadening has not been clarified. We present near lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of $66 \pm 4 \%$, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically-contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out, i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.

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Indistinguishable and efficient single photons from a quantum dot in a planar nanobeam waveguide

We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a single-photon purity larger than 99.4% and a photon indistinguishability of up to 94+-1% by using p-shell excitation combined with spectral filtering to reduce photon jitter. A temperature-dependent study allows pinpointing the residual decoherence processes notably the effect of phonon broadening. Strict resonant excitation is implemented as well as another mean of suppressing photon jitter, and the additional complexity of suppressing the excitation laser source is addressed. The study opens a clear pathway towards the long-standing goal of a fully deterministic source of indistinguishable photons, which is integrated on a planar photonic chip.

quant-ph↗

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates between photons [2,5] or to entangle remote spin states [6-9]. Ultimately, a quantum network of entangled spins constitutes a new paradigm in quantum optics [1]. Towards this goal, an integrated spin-photon interface would be a major leap forward. Here we demonstrate an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared with a fidelity of 96\%. Subsequently the system is used to implement a "single-spin photonic switch", where the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates [2], single-photon transistors [10], and efficient photonic cluster state generation [11].

quant-ph↗