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Mauro Brotons-Gisbert

Publications and source records attributed to Mauro Brotons-Gisbert.

At least 19 recordsLinked to original sources

Spectral Anisotropy in Transition Radiation from Biaxial Media

In anisotropic optical media, the electromagnetic response depends on the orientation of the optical field relative to the material's principal dielectric axes. While this direction dependence is well understood in conventional optics, it should also influence light-generation processes driven by free electrons. Here, we experimentally observe spectrally anisotropic transition radiation from biaxial van der Waals crystals. Using cathodoluminescence spectroscopy on germanium sulphide (GeS) and molybdenum oxydichloride (MoOCl$_2$) crystals, we show that the transition-radiation spectra differ along the principal in-plane optical axes. To describe this spectral anisotropy, we develop a thin-film transition-radiation model that reproduces the experimental observations. Our results demonstrate that transition radiation is a sensitive probe of the axis-dependent dielectric response of biaxial optical media and suggest that optical anisotropy can provide an additional degree of freedom for free electron-driven spectroscopy, radiation sources, and transition-radiation-based diagnostics.

physics.optics

Unveiling the Spin-Valley Structure of Dipolar Exciton Ladders in R-stacked WSe$_2$/WS$_2$ Moiré Heterobilayers

Localized interlayer excitons in moiré heterobilayers can form dipolar exciton ladders, yet their internal spin-valley structure remains unresolved. Here, we use helicity-resolved magneto-photoluminescence to identify the microscopic origin of the ladder in R-stacked WSe$_2$/WS$_2$ at charge neutrality and one-electron filling of the moiré lattice. At charge neutrality, the first two emission peaks correspond to a spin-triplet interlayer exciton and a triplet-triplet two-exciton state separated by 38 meV, reflecting the on-site dipolar interaction. The opposite Zeeman response of the apparent third rung of the ladder rules out its assignment as a spin-conserving three-exciton state and instead identifies it as a triplet-singlet two-exciton configuration with a 22 meV offset set by the WS$_2$ conduction-band spin splitting. At one-electron filling, the correlated electronic background gives rise to charged one- and two-exciton states and intervalley/intravalley two-exciton configurations, while reducing the effective exciton-exciton interaction. Our results establish a spin-valley-resolved picture of dipolar exciton ladders beyond simple occupation-number physics in moiré heterobilayers.

cond-mat.mes-hall

Twist-Engineered Nonlinearity in Two-Dimensional Crystals for Tailored Quantum Light

Van der Waals (vdW) materials enable nonlinear-optical engineering with unprecedented resolution: their strong second-order susceptibilities ($χ^{(2)}$) and twist-tunable interlayer symmetry allow the effective nonlinearity to be shaped continuously, rather than through binary $\pmχ^{(2)}$ domain inversion as in bulk ferroelectrics. Here, we show that twist-angle domain engineering exploits this continuous degree of freedom to reconstruct target longitudinal nonlinearity profiles with high fidelity. Using spontaneous parametric down-conversion (SPDC) as a benchmark, we demonstrate that twist-engineered vdW crystals yield significantly improved approximations of target phase-matching functions and correspondingly higher single-photon purities, particularly in compact devices where fabrication constraints limit conventional approaches. We further show that this framework remains effective in experimentally relevant vdW materials and demanding non-degenerate wavelength regimes involving mid-infrared photons. More broadly, the ability to continuously and locally program $χ^{(2)}$ establishes a general framework for tailoring a wide range of SPDC properties, including absolute brightness, joint spectral amplitude structure, signal-idler frequency separation, and temporal wavepacket shape beyond what is accessible in conventional nonlinear crystals. These results position vdW heterostructures as a powerful platform for engineered quantum light sources and open new opportunities for nonlinear-optical devices shaped with monolayer thickness scale.

physics.optics

Roadmap: 2D Materials for Quantum Technologies

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine$-$learning$-$assisted design and integrated experiment$-$theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

quant-ph

Highly tunable band structure in ferroelectric R-stacked bilayer WSe$_2$

Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric R-stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of R-stacked bilayer WSe$_2$ to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the $Λ$ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of R-stacked WSe$_2$, establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities.

cond-mat.mtrl-sci

Quadrupolar and Dipolar Excitons in Bilayer 2$H$-MoSe$_2$

We report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2$H$-stacked bilayer MoSe$_2$. The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe$_2$. We perform helicity-resolved reflectance contrast measurements to investigate the spin and valley configurations of the quadrupolar exciton states as a function of applied vertical electric and magnetic fields. Comparing our results with a phenomenological coupled-oscillator model indicates that the electric- and magnetic-field dependence of the quadrupolar exciton states can be attributed to the intravalley and intervalley hybridization of spin-triplet interlayer excitons with opposite permanent dipole moments, mediated by interlayer hole tunneling. These results position naturally stacked MoSe$_2$ bilayers as a promising platform to explore electric-field-tunable many-body exciton phenomena.

cond-mat.mes-hall

Interlayer and moiré excitons in atomically thin double layers: from individual quantum emitters to degenerate ensembles

Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by electric fields and the study of thermalized bosonic quasiparticles, from the single particle level to interacting degenerate dense ensembles. Additionally, the freedom to combine bilayers of different van der Waals materials without lattice or relative twist angle constraints leads to layer hybridized and moiré excitons which can be widely engineered. This review covers fundamental aspects of IXs including correlation phenomena as well as the consequence of moiré superlattices with a strong focus on TMD homo- and hetero-bilayers.

cond-mat.mes-hall

Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers

α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl$_3$ nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl$_3$ nanoflakes with thicknesses below 100 nm on SiO$_2$/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl$_3$ nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of -0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl$_3$ thickness.

cond-mat.mtrl-sci

The interplay of field-tunable strongly correlated states in a multi-orbital moiré system

The interplay of charge, spin, lattice, and orbital degrees of freedom leads to a wide range of emergent phenomena in strongly correlated systems. In heterobilayer transition metal dichalcogenide moiré systems, recent observations of Mott insulators and generalized Wigner crystals are well described by triangular lattice single-orbital Hubbard models based on K-valley derived moiré bands. Richer phase diagrams, mapped onto multi-orbital Hubbard models, are possible with hexagonal lattices in $Γ$-valley derived moiré bands and additional layer degrees of freedom. Here we report the tunable interaction between strongly correlated hole states hosted by $Γ$- and K-derived moiré bands in a monolayer MoSe$_2$ / natural WSe$_2$ bilayer device. To precisely probe the nature of the correlated states, we optically characterise the behaviour of exciton-polarons and distinguish the layer and valley degrees of freedom. We find that the honeycomb $Γ$-band gives rise to a charge-transfer insulator described by a two-orbital Hubbard model with inequivalent $Γ_\mathrm{A}$ and $Γ_\mathrm{B}$ orbitals. With an out-of-plane electric field, we re-order the $Γ_\mathrm{B}$- and K-derived bands energetically, driving an abrupt redistribution of carriers to the layer-polarized K orbital where new correlated states are observed. Finally, by fine-tuning the band-alignment, we obtain degeneracy of the $Γ_\mathrm{B}$ and K orbitals at the Fermi level. In this critical condition, stable Wigner crystals with carriers distributed across the two orbitals are observed until the Fermi-level reaches one hole per lattice site, whereupon the system collapses into a filled $Γ_\mathrm{B}$ orbital. Our results establish a platform to investigate the interplay of charge, spin, lattice, and layer geometry in multi-orbital Hubbard model Hamiltonians.

cond-mat.mes-hall

Highly Tunable Ground and Excited State Excitonic Dipoles in Multilayer 2H-MoSe$_2$

The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe$_2$ crystals exhibit electric-field-driven coupling with the ground ($1s$) and excited states ($2s$) of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to $0.73 \pm 0.01$ enm), high energy tunability (up to $\sim$ 200 meV), and full control of the spin and valley characteristics such that the exciton g-factor can be manipulated over a large range (from -4 to +14). Further, we observe the bi- and tri-layer excited state ($2s$) interlayer excitons and their coupling with the intralayer excitons states ($1s$ and $2s$). Our results, in good agreement with a coupled oscillator model with spin (layer)-selectivity and beyond standard density functional theory calculations, promote multilayer 2H-MoSe$_2$ as a highly tunable platform to explore exciton-exciton interactions with strong light-matter interactions.

cond-mat.mes-hall

Van der Waals Materials for Applications in Nanophotonics

Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.

physics.optics

Exciton-polarons in the presence of strongly correlated electronic states in a MoSe$_2$/WSe$_2$ moiré superlattice

Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sensitive to strong correlations. Here, we investigate the behaviour of excitons dressed by a Fermi sea localised by the moiré superlattice of a molybdenum diselenide (MoSe$_2$) / tungsten diselenide (WSe$_2$) twisted hetero-bilayer. At a multitude of fractional fillings of the moiré lattice, we observe ordering of both electrons and holes into stable correlated electronic states. Magneto-optical measurements reveal extraordinary Zeeman splittings of the exciton-polarons due to exchange interactions in the correlated hole phases, with a maximum close to the correlated state at one hole per site. The temperature dependence of the Zeeman splitting reveals antiferromagnetic ordering of the correlated holes across a wide range of fractional fillings. Our results illustrate the nature of exciton-polarons in the presence of strongly correlated electronic states and reveal the rich potential of the MoSe$_2$/WSe$_2$ platform for investigations of Fermi-Hubbard and Bose-Hubbard physics.

cond-mat.mes-hall

Optical and dielectric properties of MoO$_3$ nanosheets for van der Waals heterostructures

Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nitride (hBN) is the dominant choice due to its large bandgap, atomic flatness, low defect density, and encapsulation properties. However, the broad catalogue of 2D insulators offers exciting opportunities to replace hBN in certain applications that require transparent thin layers with additional optical degrees of freedom. Here we investigate the potential of single-crystalline Molybdenum Oxide (MoO$_3$) as an alternative 2D insulator for the design of nanodevices that require precise adjustment of the light polarization at the nanometer scale. First, we measure the wavelength-dependent refractive indices of MoO$_3$ along its three main crystal axes and determine the in-plane and out-of-plane anisotropy of its optical properties. We find the birefringence in MoO$_3$ nanosheets compares favorably with other 2D materials that exhibit strong birefringence, such as black phosphorus, ReS$_2$, or ReSe$_2$, in particular in the visible spectral range where MoO$_3$ has the unique advantage of transparency. Finally, we demonstrate the suitability of MoO$_3$ for dielectric encapsulation by reporting linewidth narrowing and reduced inhomogeneous broadening of 2D excitons and optically active quantum emitters, respectively, in a prototypical monolayer transition-metal dichalcogenide semiconductor. These results show the potential of MoO$_3$ as a 2D dielectric layer for manipulation of the light polarization in vertical 2D heterostructures.

physics.app-ph

Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks

We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles.

cond-mat.mes-hall

Moiré-trapped interlayer trions in a charge-tunable WSe$_2$/MoSe$_2$ heterobilayer

Transition metal dichalcogenide heterobilayers offer attractive opportunities to realize lattices of interacting bosons with several degrees of freedom. Such heterobilayers can feature moiré patterns that modulate their electronic band structure, leading to spatial confinement of single interlayer excitons (IXs) that act as quantum emitters with $C_3$ symmetry. However, the narrow emission linewidths of the quantum emitters contrast with a broad ensemble IX emission observed in nominally identical heterobilayers, opening a debate regarding the origin of IX emission. Here we report the continuous evolution from a few trapped IXs to an ensemble of IXs with both triplet and singlet spin configurations in a gate-tunable $2H$-MoSe$_2$/WSe$_2$ heterobilayer. We observe signatures of dipolar interactions in the IX ensemble regime which, when combined with magneto-optical spectroscopy, reveal that the narrow quantum-dot-like and broad ensemble emission originate from IXs trapped in moiré potentials with the same atomic registry. Finally, electron doping leads to the formation of three different species of localised negative trions with contrasting spin-valley configurations, among which we observe both intervalley and intravalley IX trions with spin-triplet optical transitions. Our results identify the origin of IX emission in MoSe$_2$/WSe$_2$ heterobilayers and highlight the important role of exciton-exciton interactions and Fermi-level control in these highly tunable quantum materials.

cond-mat.mes-hall

Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions

Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. The moiré superlattice can generate flat bands that result in new correlated insulating, superconducting, and topological states. Strong electron correlations, tunable by the fractional filling, have been observed in both graphene and transition metal dichalcogenide (TMD) based systems. In addition, in TMD based systems, the moiré potential landscape can trap interlayer excitons (IX) at specific atomic registries. Here we report that spatially isolated trapped IX in a molybdenum diselenide/tungsten diselenide heterobilayer device provide a sensitive optical probe of carrier filling in their immediate environment. By mapping the spatial positions of individual trapped IX, we are able to spectrally track the emitters as the moiré lattice is filled with excess carriers. Upon initial doping of the heterobilayer, neutral trapped IX form charged IX (IX trions) uniformly with a binding energy of ~7 meV. Upon further doping, the empty superlattice sites sequentially fill, creating a Coulomb staircase: stepwise changes in the IX trion emission energy due to Coulomb interactions with carriers at nearest neighbour moiré sites. This non-invasive, highly local technique can complement transport and non-local optical sensing techniques to characterise Coulomb interaction energies, visualise charge correlated states, or probe local disorder in a moiré superlattice.

cond-mat.mes-hall

Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe$_2$-WSe$_2$ Heterointerface

Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation effects. In order to acquire a detailed understanding of the possible many-body effects, the fundamental interactions between individual IXs have to be studied. Here, we trap a tunable number of dipolar within a nanoscale confinement potential induced by placing a MoSe$_2$-WSe$_2$ hetero-bilayer (HBL) onto an array of SiO$_2$ nanopillars. We control the mean occupation of the IX trap via the optical excitation level and observe discrete sharp-line emission from different configurations of interacting IXs. We identify these features as different multiparticle states with $N_{IX}\sim1-5$ via their power dependencies and directly measure the hierarchy of dipolar and exchange interactions as $N_{IX}$ increases. The interlayer biexciton ($N_{IX}=2$) is found to be an emission doublet that is blue-shifted from the single exciton by $ΔE=(8.4\pm0.6)$ meV and split by $2J=(1.2\pm0.5)$ meV. The blueshift is even more pronounced for triexcitons ($(12.4\pm0.4)$ meV), quadexcitons ($(15.5\pm0.6)$ meV) and quintexcitons ($(18.2\pm0.8)$ meV). These values are shown to be mutually consistent with numerical modelling of dipolar excitons confined to a harmonic trapping potential having a confinement lengthscale in the range $\ell\approx 3$ nm. Our results contribute to the understanding of interactions between IXs in TMD HBLs at the discrete limit of only a few excitations and represent a key step towards exploring quantum correlations between them.

cond-mat.mes-hall

Spin-layer locking of interlayer excitons trapped in moiré potentials

Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted TMD heterobilayers can form moiré patterns that modulate the electronic band structure according to atomic registry, leading to spatial confinement of interlayer exciton (IXs). Here we report the observation of spin-layer locking of IXs trapped in moiré potentials formed in a heterostructure of bilayer 2H-MoSe$_2$ and monolayer WSe$_2$. The phenomenon of locked electron spin and layer index leads to two quantum-confined IX species with distinct spin-layer-valley configurations. Furthermore, we observe that the atomic registries of the moiré trapping sites in the three layers are intrinsically locked together due to the 2H-type stacking characteristic of bilayer TMDs. These results identify the layer index as a useful degree of freedom to engineer tunable few-level quantum systems in two-dimensional heterostructures.

cond-mat.mes-hall