Highly Tunable Ground and Excited State Excitonic Dipoles in Multilayer 2H-MoSe$_2$

Abstract

The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe$_2$ crystals exhibit electric-field-driven coupling with the ground ($1s$) and excited states ($2s$) of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to $0.73 \pm 0.01$ enm), high energy tunability (up to $\sim$ 200 meV), and full control of the spin and valley characteristics such that the exciton g-factor can be manipulated over a large range (from -4 to +14). Further, we observe the bi- and tri-layer excited state ($2s$) interlayer excitons and their coupling with the intralayer excitons states ($1s$ and $2s$). Our results, in good agreement with a coupled oscillator model with spin (layer)-selectivity and beyond standard density functional theory calculations, promote multilayer 2H-MoSe$_2$ as a highly tunable platform to explore exciton-exciton interactions with strong light-matter interactions.