arXiv subjects

Md Shafayat Hossain

Publications and source records attributed to Md Shafayat Hossain.

At least 37 records · Page 2Linked to original sources

arXiv2024

A topological Hund nodal line antiferromagnet

The interplay of topology, magnetism, and correlations gives rise to intriguing phases of matter. In this study, through state-of-the-art angle-resolved photoemission spectroscopy, density functional theory and dynamical mean-field theory calculations, we visualize a fourfold degenerate Dirac nodal line at the boundary of the bulk Brillouin zone in the antiferromagnet YMn2Ge2. We further demonstrate that this gapless, antiferromagnetic Dirac nodal line is enforced by the combination of magnetism, space-time inversion symmetry and nonsymmorphic lattice symmetry. The corresponding drumhead surface states traverse the whole surface Brillouin zone. YMn2Ge2 thus serves as a platform to exhibit the interplay of multiple degenerate nodal physics and antiferromagnetism. Interestingly, the magnetic nodal line displays a d-orbital dependent renormalization along its trajectory in momentum space, thereby manifesting Hund coupling. Our findings offer insights into the effect of electronic correlations on magnetic Dirac nodal lines, leading to an antiferromagnetic Hund nodal line.

cond-mat.str-el↗

arXiv2024

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving penta-layer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable Ferro-valleytricity of penta-layer rhombohedral graphene to develop non-volatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less non-volatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, non-destructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed non-volatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

cond-mat.mes-hall↗

arXiv2024

Van-Hove annihilation and nematic instability on a Kagome lattice

Novel states of matter arise in quantum materials due to strong interactions among electrons. A nematic phase breaks the point group symmetry of the crystal lattice and is known to emerge in correlated materials. Here we report the observation of an intra-unit-cell nematic order and signatures of Pomeranchuk instability in the Kagome metal ScV6Sn6. Using scanning tunneling microscopy and spectroscopy, we reveal a stripe-like nematic order breaking the crystal rotational symmetry within the Kagome lattice itself. Moreover, we identify a set of van Hove singularities adhering to the Kagome layer electrons, which appear along one direction of the Brillouin zone while being annihilated along other high-symmetry directions, revealing a rotational symmetry breaking. Via detailed spectroscopic maps, we further observe an elliptical deformation of Fermi surface, which provides direct evidence for an electronically mediated nematic order. Our work not only bridges the gap between electronic nematicity and Kagome physics, but also sheds light on the potential mechanism for realizing symmetry-broken phases in correlated electron systems.

cond-mat.str-el↗

arXiv2024

Transport response of topological hinge modes in $α$-Bi$_4$Br$_4$

Electronic topological phases are renowned for their unique properties, where conducting surface states exist on the boundary of an insulating three-dimensional bulk. While the transport response of the surface states has been extensively studied, the response of the topological hinge modes remains elusive. Here, we investigate a layered topological insulator $α$-Bi$_4$Br$_4$, and provide the first evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps. Our magnetoresistance measurements reveal pronounced h/e periodic (where h denotes Planck's constant and e represents the electron charge) Aharonov-Bohm oscillation. The observed periodicity, which directly reflects the enclosed area of phase-coherent electron propagation, matches the area enclosed by the sample hinges, providing compelling evidence for the quantum interference of electrons circumnavigating around the hinges. Notably, the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry, and in agreement with the locations of the hinge modes according to our scanning tunneling microscopy images. Remarkably, this demonstration of quantum transport in a topological insulator can be achieved using a flake geometry and we show that it remains robust even at elevated temperatures. Our findings collectively reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can be directly applied to the development of efficient quantum electronic devices.

cond-mat.mes-hall↗

arXiv2024

Untangle charge-order dependent bulk states from surface effects in a topological kagome metal ScV$_6$Sn$_6$

Kagome metals with charge density wave (CDW) order exhibit a broad spectrum of intriguing quantum phenomena. The recent discovery of the novel kagome CDW compound ScV$_6$Sn$_6$ has spurred significant interest. However, understanding the interplay between CDW and the bulk electronic structure has been obscured by a profusion of surface states and terminations in this quantum material. Here, we employ photoemission spectroscopy and potassium dosing to elucidate the complete bulk band structure of ScV$_6$Sn$_6$, revealing multiple van Hove singularities near the Fermi level. We surprisingly discover a robust spin-polarized topological Dirac surface resonance state at the M point within the two-fold van Hove singularities. Assisted by the first-principle calculations, the temperature dependence of the $k_z$- resolved ARPES spectrum provides unequivocal evidence for the proposed $\sqrt{3}$$\times$$\sqrt{3}$$\times3$ charge order over other candidates. Our work not only enhances the understanding of the CDW-dependent bulk and surface states in ScV$_6$Sn$_6$ but also establishes an essential foundation for potential manipulation of the CDW order in kagome materials.

cond-mat.str-el↗

arXiv2024

Discovery of a Topological Charge Density Wave

Charge density waves (CDWs) appear in numerous condensed matter platforms, ranging from high-Tc superconductors to quantum Hall systems. Despite such ubiquity, there has been a lack of direct experimental study on boundary states that can uniquely stem from the charge order. Here, using scanning tunneling microscopy, we directly visualize the bulk and boundary phenomenology of CDW in a topological material, Ta2Se8I. Below the transition temperature (TCDW = 260 K), tunneling spectra on an atomically resolved lattice reveal a large insulating gap in the bulk and on the surface, exceeding 500 meV, surpassing predictions from standard weakly-coupled mean-field theory. Spectroscopic imaging confirms the presence of CDW, with LDOS maxima at the conduction band corresponding to the LDOS minima at the valence band, thus revealing a π phase difference in the respective CDW order. Concomitantly, at a monolayer step edge, we detect an in-gap boundary mode with modulations along the edge that match the CDW wavevector along the edge. Intriguingly, the phase of the edge state modulation shifts by π within the charge order gap, connecting the fully gapped bulk (and surface) conduction and valence bands via a smooth energy-phase relation. This bears similarity to the topological spectral flow of edge modes, where the boundary modes bridge the gapped bulk modes in energy and momentum magnitude but in Ta2Se8I, the connectivity distinctly occurs in energy and momentum phase. Notably, our temperature-dependent measurements indicate a vanishing of the insulating gap and the in-gap edge state above TCDW, suggesting their direct relation to CDW. The theoretical analysis also indicates that the observed boundary mode is topological and linked to CDW.

cond-mat.str-el↗

arXiv2024

Discovery of a hybrid topological quantum state in an elemental solid

Topology and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three significant research directions: competition between distinct interactions, as in the multiple intertwined phases, interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and the coalescence of multiple topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, while the last example remains mostly untouched, mainly because of the lack of a material platform for experimental studies. Here, using tunneling microscopy, photoemission spectroscopy, and theoretical analysis, we unveil a "hybrid" and yet novel topological phase of matter in the simple elemental solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology, stabilizing a hybrid topological phase. While momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topology-induced step edge conduction channels revealed on various forms of natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step edge states in arsenic relies on the simultaneous presence of both a nontrivial strong Z2 invariant and a nontrivial higher-order topological invariant, providing experimental evidence for hybrid topology and its realization in a single crystal. Our discovery highlights pathways to explore the interplay of different kinds of band topology and harness the associated topological conduction channels in future engineered quantum or nano-devices.

cond-mat.mes-hall↗

arXiv2023

Topological, or Non-topological? A Deep Learning Based Prediction

Prediction and discovery of new materials with desired properties are at the forefront of quantum science and technology research. A major bottleneck in this field is the computational resources and time complexity related to finding new materials from ab initio calculations. In this work, an effective and robust deep learning-based model is proposed by incorporating persistent homology and graph neural network which offers an accuracy of 91.4% and an F1 score of 88.5% in classifying topological vs. non-topological materials, outperforming the other state-of-the-art classifier models. The incorporation of the graph neural network encodes the underlying relation between the atoms into the model based on their own crystalline structures and thus proved to be an effective method to represent and process non-euclidean data like molecules with a relatively shallow network. The persistent homology pipeline in the suggested neural network is capable of integrating the atom-specific topological information into the deep learning model, increasing robustness, and gain in performance. It is believed that the presented work will be an efficacious tool for predicting the topological class and therefore enable the high-throughput search for novel materials in this field.

cond-mat.mtrl-sci↗

arXiv2023

A Deep Dive into the Design Space of a Dynamically Reconfigurable Cryogenic Spiking Neuron

Spiking neural network offers the most bio-realistic approach to mimic the parallelism and compactness of the human brain. A spiking neuron is the central component of an SNN which generates information-encoded spikes. We present a comprehensive design space analysis of the superconducting memristor (SM)-based electrically reconfigurable cryogenic neuron. A superconducting nanowire (SNW) connected in parallel with an SM function as a dual-frequency oscillator and two of these oscillators can be coupled to design a dynamically tunable spiking neuron. The same neuron topology was previously proposed where a fixed resistance was used in parallel with the SNW. Replacing the fixed resistance with the SM provides an additional tuning knob with four distinct combinations of SM resistances, which improves the reconfigurability by up to ~70%. Utilizing an external bias current (Ibias), the spike frequency can be modulated up to ~3.5 times. Two distinct spike amplitudes (~1V and ~1.8 V) are also achieved. Here, we perform a systematic sensitivity analysis and show that the reconfigurability can be further tuned by choosing a higher input current strength. By performing a 500-point Monte Carlo variation analysis, we find that the spike amplitude is more variation robust than spike frequency and the variation robustness can be further improved by choosing a higher Ibias. Our study provides valuable insights for further exploration of materials and circuit level modification of the neuron that will be useful for system-level incorporation of the neuron circuit

cs.NE↗

arXiv2023

Intertwining of magnetism and charge ordering in kagome FeGe

Recent experiments report a charge density wave (CDW) in the antiferromagnet FeGe, but the nature of the charge ordering and the associated structural distortion remains elusive. We discuss the structural and electronic properties of FeGe. Our proposed ground state phase accurately captures atomic topographies acquired by scanning tunneling microscopy. We show that the 2$\times$2$\times$1 CDW likely results from the Fermi surface nesting of hexagonal-prism-shaped kagome states. FeGe is found to exhibit distortions in the positions of the Ge atoms instead of the Fe atoms in the kagome layers. Using in-depth first-principles calculations and analytical modeling, we demonstrate that this unconventional distortion is driven by the intertwining of magnetic exchange coupling and CDW interactions in this kagome material. Movement of Ge atoms from their pristine positions also enhances the magnetic moment of the Fe kagome layers. Our study indicates that magnetic kagome lattices provide a material candidate for exploring the effects of strong electronic correlations on the ground state and their implications for transport, magnetic, and optical responses in materials.

cond-mat.mtrl-sci↗

arXiv2023

Emergent Edge Modes in Shifted Quasi-One-Dimensional Charge Density Waves

We propose and study a two-dimensional (2D) phase of shifted charge density waves (CDW), which is constructed from an array of weakly coupled 1D CDW wires whose phases shift from one wire to the next. We show that the fully gapped bulk CDW has topological properties, characterized by a nonzero Chern number, that imply edge modes within the bulk gap. Remarkably, these edge modes exhibit spectral pseudo-flow as a function of \emph{position} along the edge, and are thus dual to the chiral edge modes of Chern insulators with their spectral flow in \emph{momentum} space. Furthermore, we show that the CDW edge modes are stable against inter-wire coupling. Our predictions can be tested experimentally in quasi-1D CDW compounds such as Ta$_2$Se$_8$I.

cond-mat.mtrl-sci↗

arXiv2023

Observation of Kondo lattice and Kondo-enhanced anomalous Hall effect in an itinerant ferromagnet

The interplay between Kondo screening and magnetic interactions is central to comprehending the intricate phases in heavy-fermion compounds. However, the role of the itinerant magnetic order, which is driven by the conducting (c) electrons, has been largely uncharted in the context of heavy-fermion systems due to the scarcity of material candidates. Here we demonstrate the coexistence of the coherent Kondo screening and d-orbital ferromagnetism in material system La$_{1-x}$Ce$_x$Co$_2$As$_2$, through comprehensive thermodynamic and electrical transport measurements. Additionally, using angle-resolved photoemission spectroscopy (ARPES), we further observe the f-orbit-dominated bands near the Fermi level ($E_f$) and signatures of the f-c hybridization below the magnetic transition temperature, providing strong evidence of Kondo lattice state in the presence of ferromagnetic order. Remarkably, by changing the ratio of Ce/La, we observe a substantial enhancement of the anomalous Hall effect (AHE) in the Kondo lattice regime. The value of the Hall conductivity quantitatively matches with the first-principle calculation that optimized with our ARPES results and can be attributed to the large Berry curvature (BC) density engendered by the topological nodal rings composed of the Ce-4f and Co-3d orbitals at $E_f$. Our findings point to the realization of a new platform for exploring correlation-driven topological responses in a novel Kondo lattice environment.

cond-mat.str-el↗

arXiv2023

Anomalously high supercurrent density in a two-dimensional topological material

Ongoing advances in superconductors continue to revolutionize technology thanks to the increasingly versatile and robust availability of lossless supercurrent. In particular high supercurrent density can lead to more efficient and compact power transmission lines, high-field magnets, as well as high-performance nanoscale radiation detectors and superconducting spintronics. Here, we report the discovery of an unprecedentedly high superconducting critical current density (17 MA/cm2 at 0 T and 7 MA/cm2 at 8 T) in 1T'-WS2, exceeding those of all reported two-dimensional superconductors to date. 1T'-WS2 features a strongly anisotropic (both in- and out-of-plane) superconducting state that violates the Pauli paramagnetic limit signaling the presence of unconventional superconductivity. Spectroscopic imaging of the vortices further substantiates the anisotropic nature of the superconducting state. More intriguingly, the normal state of 1T'-WS2 carries topological properties. The band structure obtained via angle-resolved photoemission spectroscopy and first-principles calculations points to a Z2 topological invariant. The concomitance of topology and superconductivity in 1T'-WS2 establishes it as a topological superconductor candidate, which is promising for the development of quantum computing technology.

cond-mat.supr-con↗

arXiv2022

Voltage-controlled Cryogenic Boolean Logic Family Based on Ferroelectric SQUID

The recent progress in quantum computing and space exploration led to a surge in interest in cryogenic electronics. Superconducting devices such as Josephson junction, Josephson field effect transistor, cryotron, and superconducting quantum interference device (SQUID) are traditionally used to build cryogenic logic gates. However, due to the superconducting nature, gate-voltage-based control of these devices is extremely difficult. Even more challenging is to cascade the logic gates because most of these devices require current bias for their operation. Therefore, these devices are not as convenient as the semiconducting transistors to design logic gates. Here, to overcome these challenges, we propose a ferroelectric SQUID (FeSQUID) based voltage-controlled logic gates. FeSQUID exhibits two different critical current levels for two different voltage-switchable polarization states of the ferroelectric. We utilize the polarization-dependent (hence, voltage-controllable) superconducting to resistive switching of FeSQUID to design Boolean logic gates such as Copy, NOT, AND, and OR gates. The operations of these gates are verified using a Verilog-A-based compact model of FeSQUID. Finally, to demonstrate the fanning out capability of FeSQUID-based logic family, we simulate a 2-input XOR gate using FeSQUID-based NOT, AND, and OR gates. Together with the ongoing progress on FeSQUID-based non-volatile memory, our designed FeSQUID-based logic family will enable all-FeSQUID based cryogenic computer, ensure minimum mismatch between logic and memory blocks in terms of speed, power consumption, and fabrication process.

physics.app-ph↗

arXiv2022

Compact Model of a Topological Transistor

The precession of a ferromagnet leads to the injection of spin current and heat into an adjacent non-magnetic material. Besides, spin-orbit entanglement causes an additional charge current injection. Such a device has been recently proposed where a quantum-spin hall insulator (QSHI) in proximity to a ferromagnetic insulator (FI) and superconductor (SC) leads to the pumping of charge, spin, and heat. Here we build a circuit-compatible Verilog-A-based compact model for the QSHI-FI-SC device capable of generating two topologically robust modes enabling the device operation. Our model also captures the dependence on the ferromagnetic precision, drain voltage, and temperature with an excellent (> 99%) accuracy.

cond-mat.mes-hall↗

arXiv2022

Room-temperature quantum spin Hall edge state in a higher-order topological insulator Bi$_4$Br$_4$

Room-temperature realization of macroscopic quantum phenomena is one of the major pursuits in fundamental physics. The quantum spin Hall state, a topological quantum phenomenon that features a two-dimensional insulating bulk and a helical edge state, has not yet been realized at room temperature. Here, we use scanning tunneling microscopy to visualize a quantum spin Hall edge state on the surface of the higher-order topological insulator Bi4Br4. We find that the atomically resolved lattice exhibits a large insulating gap of over 200meV, and an atomically sharp monolayer step edge hosts a striking in-gap gapless state, suggesting the topological bulk-boundary correspondence. An external magnetic field can gap the edge state, consistent with the time-reversal symmetry protection inherent to the underlying topology. We further identify the geometrical hybridization of such edge states, which not only attests to the Z2 topology of the quantum spin Hall state but also visualizes the building blocks of the higher-order topological insulator phase. Remarkably, both the insulating gap and topological edge state are observed to persist up to 300K. Our results point to the realization of the room-temperature quantum spin Hall edge state in a higher-order topological insulator.

cond-mat.mes-hall↗

arXiv2022

Cryogenic Neuromorphic Hardware

The revolution in artificial intelligence (AI) brings up an enormous storage and data processing requirement. Large power consumption and hardware overhead have become the main challenges for building next-generation AI hardware. To mitigate this, Neuromorphic computing has drawn immense attention due to its excellent capability for data processing with very low power consumption. While relentless research has been underway for years to minimize the power consumption in neuromorphic hardware, we are still a long way off from reaching the energy efficiency of the human brain. Furthermore, design complexity and process variation hinder the large-scale implementation of current neuromorphic platforms. Recently, the concept of implementing neuromorphic computing systems in cryogenic temperature has garnered intense interest thanks to their excellent speed and power metric. Several cryogenic devices can be engineered to work as neuromorphic primitives with ultra-low demand for power. Here we comprehensively review the cryogenic neuromorphic hardware. We classify the existing cryogenic neuromorphic hardware into several hierarchical categories and sketch a comparative analysis based on key performance metrics. Our analysis concisely describes the operation of the associated circuit topology and outlines the advantages and challenges encountered by the state-of-the-art technology platforms. Finally, we provide insights to circumvent these challenges for the future progression of research.

cs.ET↗

arXiv2022

Evidence for electronic signature of magnetic transition in topological magnet HoSbTe

Topological insulators with intrinsic magnetic order are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. To study these systems and their physics, people have proposed a variety of magnetic topological insulator systems, including HoSbTe, an antiferromagnetic weak topological insulator candidate. In this work, we use scanning tunneling microscopy to probe the electronic structure of HoSbTe with antiferromagnetic and ferromagnetic orders that are tuned by applying an external magnetic field. Although around the Fermi energy, we find minor differences between the quasi-particle interferences under the ferromagnetic and antiferromagnetic orders, deep inside the valance region, a new quasi-particle interference signal emerges with ferromagnetism. This observation is consistent with our first-principles calculations indicating the magnetism-driven transition of the electronic states in this spin-orbit coupled topological magnet.

cond-mat.str-el↗