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Mehran Kianinia

Publications and source records attributed to Mehran Kianinia.

At least 37 records · Page 2Linked to original sources

Fast characterization of optically detected magnetic resonance spectra via data clustering

Optically detected magnetic resonance (ODMR) has become a well-established and powerful technique for measuring the spin state of solid-state quantum emitters, at room temperature. Relying on spin-dependent recombination processes involving the emitters ground, excited and metastable states, ODMR is enabling spin-based quantum sensing of nanoscale electric and magnetic fields, temperature, strain and pressure, as well as imaging of individual electron and nuclear spins. Central to many of these sensing applications is the ability to reliably analyze ODMR data, as the resonance frequencies in these spectra map directly onto target physical quantities acting on the spin sensor. However, this can be onerous, as relatively long integration times -- from milliseconds up to tens of seconds -- are often needed to reach a signal-to-noise level suitable to determine said resonances using traditional fitting methods. Here, we present an algorithm based on data clustering that overcome this limitation and allows determining the resonance frequencies of ODMR spectra with better accuracy (~1.3x factor), higher resolution (~4.7x factor) and/or overall fewer data points (~5x factor) than standard approaches based on statistical inference. The proposed clustering algorithm (CA) is thus a powerful tool for many ODMR-based quantum sensing applications, especially when dealing with noisy and scarce data sets.

quant-ph↗

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters, both as singles and in ensembles, with three discrete polarization axes indicative of a C2v symmetry defect. Our results constitute an important milestone towards the implementation of hBN quantum emitters in integrated quantum photonics.

quant-ph↗

Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ($\approx 5\times 10^{18}$~cm$^{-2}$) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting $V_{\rm B}^-$ spin properties.

cond-mat.mes-hall↗

Optically addressable spin defects coupled to bound states in the continuum metasurfaces

Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances leveraging quasi-bound states in the continuum (qBICs). Coupling between spin defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth facilitated by Q factors exceeding $10^2$. Our findings demonstrate a new class of spin based metasurfaces and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission.

physics.optics↗

Fibre-integrated van der Waals quantum sensor with an optimal cavity interface

Integrating quantum materials with fibre optics adds advanced functionalities to a variety of applications, and introduces fibre-based quantum devices such as remote sensors capable of probing multiple physical parameters. However, achieving optimal integration between quantum materials and fibres is challenging, particularly due to difficulties in fabrication of quantum elements with suitable dimensions and an efficient photonic interface to a commercial optical fibre. Here we demonstrate a new modality for a fibre-integrated van der Waals quantum sensor. We design and fabricate a hole-based circular Bragg grating cavity from hexagonal boron nitride (hBN), engineer optically active spin defects within the cavity, and integrate the cavity with an optical fibre using a deterministic pattern transfer technique. The fibre-integrated hBN cavity enables efficient excitation and collection of optical signals from spin defects in hBN, thereby enabling all-fibre integrated quantum sensors. Moreover, we demonstrate remote sensing of a ferromagnetic material and of arbitrary magnetic fields. All in all, the hybrid fibre-based quantum sensing platform may pave the way to a new generation of robust, remote, multi-functional quantum sensors.

quant-ph↗

Framework for engineering of spin defects in hexagonal boron nitride by focused ion beams

Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiation. However, VB- fabrication methods often lack robustness and reproducibility when applied to thin flakes (less than 10 nm) of hBN. Here we identify mechanisms that both promote and inhibit VB- generation and optimize ion beam parameters for site-specific fabrication of optically active VB- centers. We emphasize conditions accessible by high resolution focused ion beam (FIB) systems, and present a framework for VB- fabrication in hBN flakes of arbitrary thickness for applications in quantum sensing and quantum information processing.

cond-mat.mtrl-sci↗

Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride

Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate charge state switching of $\small{V_B}$ defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states ($\small{V_B^- \rightleftharpoons V_B^0 + e^-}$), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the $\small{V_B}$ charge state, and to stabilize the -1 state which is a prerequisite for optical spin manipulation and readout of the defect.

physics.optics↗

Monolithic Platform for Integrated Quantum Photonics with Hexagonal Boron Nitride

Integrated quantum photonics (IQP) provides a path to practical, scalable quantum computation, communications and information processing. Realization of an IQP platform requires integration of quantum emitters with high quality photonic circuits. However, the range of materials for monolithic platforms is limited by the simultaneous need for a high-quality single photon source, high optical performance and availability of scalable nanofabrication techniques. Here we demonstrate the fabrication of IQP components from the recently emerged quantum material hexagonal boron nitride (hBN), including tapered waveguides, microdisks, and 1D and 2D photonic crystal cavities. Resonators with quality factors greater than 4000 are achieved, and we engineer proof-of-principle complex, free-standing IQP circuitry fabricated from single crystal hBN. Our results show the potential of hBN for scalable integrated quantum technologies.

physics.optics↗

Detection of paramagnetic spins with an ultrathin van der Waals quantum sensor

Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits the sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material which can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (V$_{\rm B}^-$) defects in a powder of ultrathin hBN nanoflakes ($<10$~atomic monolayers thick on average) and measure the longitudinal spin relaxation time ($T_1$) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd$^{3+}$ ions and observe a clear $T_1$ quenching, under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements including $T_1$ relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications, and pave the way towards the realisation of a truly 2D, ultrasensitive quantum sensor.

cond-mat.mes-hall↗

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects are limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Hare, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave field at 3.8 GHz. The spin transitions in the ground state of VB- are coupled to the frequency of the microwave cavity which results in enhanced optically detected magnetic resonance (ODMR) contrast. In addition, the linewidth of the ODMR signal further reduces, achieving a magnetic field sensitivity as low as 42.4 microtesla per square root of hertz. Our robust and scalable device engineering is promising for future employment of spin defects in hBN for quantum sensing.

physics.app-ph↗

Photophysics of blue quantum emitters in hexagonal Boron Nitride

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.

physics.optics↗

Stark effect of quantum blue emitters in hBN

Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN.

physics.app-ph↗

Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation

Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic temperatures. Over two dozen sites, we observe an ultra-narrow distribution of the zero phonon line at ~436 nm, together with strong linearly polarized emission. We employ resonant excitation to characterize the emission lineshape and find spectral diffusion and phonon broadening contribute to linewidths in the range 1-2 GHz. Rabi oscillations are observed at a range of resonant excitation powers, and under 1 $μ$W excitation a coherent superposition is maintained up to 0.90 ns. Our results are promising for future employment of quantum emitters in hBN for scalable quantum technologies.

quant-ph↗

Coupling Spin Defects in Hexagonal Boron Nitride to Titanium Oxide Ring Resonators

Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled boron vacancy showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.

physics.optics↗

Monolithic Silicon Carbide Metalenses

Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic applications. We support the lens fabrication by optical transmission measurement and characterize the focal points of the lenses. Our results will accelerate the development of SiC nanophotonic devices and aid in an on chip integration of quantum emitters with meta-optical components.

physics.optics↗

Electrical Control of Quantum Emitters in a Van der Waals Heterostructure

Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large band gap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in n hBN graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly coherent source with linewidths of 160 MHz. Our results enhance the potential of hBN for tuneable solid state quantum emitters for the growing field of quantum information science.

physics.optics↗

Purcell enhancement of a cavity-coupled emitter in hexagonal boron nitride

Integration of solid state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride have emerged over the last years as viable candidate. While the fundamental physical properties have been intensively studied over the last years, only few works have focused on the emitter integration into photonic resonators. Yet, for a potential quantum photonic material platform, the integration with nanophotonic cavities is an important cornerstone, as it enables the deliberate tuning of the spontaneous emission and the improved readout of distinct transitions for that quantum emitter. In this work, we demonstrate the resonant tuning of an integrated monolithic hBN quantum emitter in a photonic crystal cavity through gas condensation at cryogenic temperature. We resonantly coupled the zero phonon line of the emitter to a cavity mode and demonstrate emission enhancement and lifetime reduction, with an estimation for the Purcell factor of ~ 15.

physics.optics↗

Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities

Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, we extracted two orders of magnitude in photoluminescence enhancement associated with a corresponding 2 fold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and realisation of nanophotonic devices with spin defects in hexagonal boron nitride.

physics.optics↗