SearcharxivSearch

arXiv subjects

Mei-Yin Chou

Publications and source records attributed to Mei-Yin Chou.

At least 19 recordsLinked to original sources

Dynamically training machine-learning-based force fields for strongly anharmonic materials

Machine learning (ML) force fields have emerged as a powerful tool for computing materials properties at finite temperatures, particularly in regimes where traditional phonon-based perturbation theories fail or cannot be extended beyond the harmonic approximation. These approaches offer accuracy comparable to ab initio molecular dynamics (MD), but at a fraction of the computational cost. However, their reliability critically depends on the quality and representativeness of the training data. In particular, static training datasets often lead to failure when the force field encounters previously unseen atomic configurations during MD simulations. In this work, we present a framework for dynamically training ML force fields and demonstrate its effectiveness across materials with varying degrees of anharmonicity, including cubic boron arsenide (c-BAs), silicon (Si), and tin selenide (SnSe). Our method builds on the conventional lattice dynamics expansion of total energy and incorporates Bayesian error estimation to guide adaptive data acquisition during simulation. Specifically, we show that trajectory-averaged Bayesian errors enable efficient and targeted exploration of the configuration space, significantly enhancing the robustness and transferability of the resulting force fields. We further demonstrate how Bayesian error estimation can be applied to determine the convergence of the dynamic training without requiring additional ab initio data. This proposed framework offers a practical and easily implementable scheme to improve the training process, which is the most critical step in developing reliable ML force fields.

cond-mat.mtrl-sci

Origin of magic angles in twisted bilayer graphene: The magic ring

The unexpected discovery of superconductivity and strong electron correlation in twisted bilayer graphene (TBG), a system containing only sp electrons, is considered as one of the most intriguing developments in two-dimensional materials in recent years. The key feature is the emergent flat energy bands near the Fermi level, a favorable condition for novel many-body phases, at the so-called "magic angles". The physical origin of these interesting flat bands has been elusive to date, hindering the construction of an effective theory for the unconventional electron correlation. In this work, we have identified the importance of charge accumulation in the AA region of the moire supercell and the most critical role of the Fermi ring in AA-stacked bilayer graphene. We show that the magic angles can be predicted by the moire periodicity determined by the size of this Fermi ring. The resonant criterion in momentum space makes it possible to coherently combine states on the Fermi ring through scattering by the moire potential, leading to flat bands near the Fermi level. We thus establish the physical origin of the magic angles in TBG and identify the characteristics of one-particle states associated with the flat bands for further many-body investigations.

cond-mat.mes-hall

Competing interlayer interactions in twisted monolayer-bilayer graphene: From spontaneous electric polarization to quasi-magic angle

The family of moiré materials provides a powerful platform for tuning interlayer couplings via the twist angle in systems with large spatial periodicity. In trilayer graphene systems, interlayer couplings at the two interfaces can possibly be tuned separately, and the competition between these interactions can therefore influence the electronic structure in a significant way. In this study, we investigate the electronic properties of twisted monolayer-bilayer graphene (aAB) beyond the continuum model, using first-principles calculations combined with an accurate tight-binding model. We find that at large twist angles, the electronic features of aAB are well described by the interaction between the parabolic bands of the Bernal AB-bilayer and the Dirac bands of the twisted monolayer, resulting in a spontaneous electric polarization in the former that splits the parabolic bands. As the twist angle decreases, the coupling between adjacent layers at the twisted interface becomes dominant, which makes aAB look like twisted bilayer graphene (TBG) interacting with the outer Bernal layer. A moiré potential emerges in the TBG-like layers, leading to charge localization, while the outer Bernal layer exhibits charge delocalization with substantial sublattice polarization at the atomic scale. Furthermore, we identify narrow bands with a minimum width at a quasi-magic angle of 1.16 degrees, closely matching the magic angle of TBG. The enhanced electron correlation expected in these narrow bands suggests that aAB is a promising platform for exploring correlated electronic phenomena.

cond-mat.mes-hall

BN-embedded monolayer graphene with tunable electronic and topological properties

Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN doping serves as an ideal platform for band-gap engineering and valleytronic applications. We report a systematic first-principles study of the atomic configurations and band gap opening for energetically favorable BN patches embedded in graphene. Based on first-principles calculations, we construct a tight-binding model to simulate general doping configurations in large supercells. Unexpectedly, the calculations find a linear dependence of the band gap on the effective BN concentration at low doping, arising from an induced effective on-site energy difference at the two C sublattices as they are substituted by B and N dopants alternately. The significant and tunable band gap of a few hundred meVs, with preserved topological properties of graphene and feasible sample preparation in the laboratory, presents great opportunities to realize valley physics applications in graphene systems at room temperature.

cond-mat.mes-hall

Time-Variable Jet Ejections from RW Aur A, RY Tau and DG Tau

We present Gemini-NIFS, VLT-SINFONI and Keck-OSIRIS observations of near-infrared [Fe II] emission associated with the well-studied jets from three active T Tauri stars; RW Aur A, RY Tau and DG Tau taken from 2012-2021. We primarily covered the redshifted jet from RW Aur A, and the blueshifted jets from RY Tau and DG Tau, to investigate long-term time variabilities potentially related to the activities of mass accretion and/or the stellar magnetic fields. All of these jets consist of several moving knots with tangential velocities of 70-240 km s-1, ejected from the star with different velocities and at irregular time intervals. Via comparison with literature, we identify significant differences in tangential velocities for the DG Tau jet between 1985-2008 and 2008-2021. The sizes of the individual knots appear to increase with time, and in turn, their peak brightnesses in the 1.644-micron emission decreased up to a factor of ~30 during the epochs of our observations. A variety of the decay timescales measured in the [Fe II] 1.644 micron emission can be attributed to different pre-shock conditions if the moving knots are unresolved shocks. However, our data do not exclude the possibility that these knots are due to non-uniform density/temperature distributions with another heating mechanism, or in some cases due to stationary shocks without proper motions. Spatially resolved observations of these knots with significantly higher angular resolutions are necessary to better understand their physical nature.

astro-ph.SR

All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics

Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical gate control, ii) electrically switchable valley polarity, iii) robustness against configuration fluctuation, and iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics.

cond-mat.mes-hall

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of monolayer TMDs to create a heterojunction. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe2 by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties, providing avenues for future device design.

cond-mat.mtrl-sci

Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2

Tailoring interlayer coupling has emerged as a powerful tool to tune the electronic structure of van der Waals (vdW) bilayers. One example is the usage of the moire pattern to create controllable two-dimensional electronic superlattices through the configurational dependence of interlayer electronic couplings. This approach has led to some remarkable discoveries in twisted graphene bilayers, and transition metal dichalcogenide (TMD) homo- and hetero-bilayers. However, a largely unexplored factor is the interlayer distance, d, which can impact the interlayer coupling strength exponentially. In this letter, we quantitatively determine the coupling strengths as a function of interlayer spacing at various critical points of the Brillouin zone in bilayer MoS2. The exponential dependence of the coupling parameter on the gap distance is demonstrated. Most significantly, we achieved a 280% enhancement of K-valley coupling strength with an 8% reduction of the vdW gap, pointing to a new strategy in designing a novel electronic system in vdW bilayers.

cond-mat.mtrl-sci

Critical role of parallel momentum in quantum well state couplings in multi-stacked nanofilms: an angle resolved photoemission study

We use angle resolved photoemission spectroscopy (ARPES) to investigate the coupling of electron quantum well states (QWS) in epitaxial thin Pb and Ag films. More specifically, we investigate the Ag/Si, Pb/Si, and Pb/Ag/Si systems. We found that the parallel momentum plays a very profound role determining how two adjacent quantum wells are coupled electronically across the interface. We revealed that in the Pb/Ag bimetallic system, there exist two distinctly different regimes in the energy versus momentum (E vs. k) space. In one regime the electronic states in Ag and Pb are strongly coupled resulting in a new set of quantum well states for the bi-metallic system. In the other regime the electronic states in individual metallic layers are retained in their respective regions, as if they are totally decoupled. This result is corroborated by calculations using density functional theory. We further unravel the underlying mechanism associated with the electron refraction and total internal reflection across the interface.

cond-mat.mes-hall

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.

cond-mat.mes-hall

Possible Time Correlation Between Jet Ejection and Mass Accretion for RW Aur A

For the active T-Taur star RW Aur A we have performed long-term (~10 yr) monitoring observations of (1) jet imaging in the [Fe II] 1.644-micron emission line using Gemini-NIFS and VLT-SINFONI; (2) optical high-resolution spectroscopy using CFHT-ESPaDOnS; and (3) V-band photometry using the CrAO 1.25-m telescope and AAVSO. The latter two observations confirm the correlation of time variabilities between (A) the Ca II 8542 A and O I 7772 A line profiles associated with magnetospheric accretion, and (B) optical continuum fluxes. The jet images and their proper motions show that four knot ejections occurred at the star over the past ~15 years with an irregular interval of 2-6 years. The time scale and irregularity of these intervals are similar to those of the dimming events seen in the optical photometry data. Our observations show a possible link between remarkable (Delta_V < -1 mag.) photometric rises and jet knot ejections. Observations over another few years may confirm or reject this trend. If confirmed, this would imply that the location of the jet launching region is very close to the star (r <<0.1 au) as predicted by some jet launching models. Such a conclusion would be crucial for understanding disk evolution within a few au of the star, and therefore possible ongoing planet formation at these radii.

astro-ph.SR

Topological Properties of Gapped Graphene Nanoribbons with Spatial Symmetries

To date, almost all of the discussions on topological insulators (TIs) have focused on two- and three-dimensional systems. One-dimensional (1D) TIs manifested in real materials, in which localized spin states may exist at the end or near the junctions, have largely been unexplored. Previous studies have considered the system of gapped graphene nanoribbons (GNRs) possessing spatial symmetries (e.g. inversion) with only termination patterns commensurate with inversion- or mirror-symmetric unit cells. In this work, we prove that a symmetry-protected $\mathbb{Z}_{2}$ topological classification exists for any type of termination. In these cases the Berry phase summed up over all occupied bands turns out to be $π$-quantized in the presence of the chiral symmetry. However, it does not always provide the correct corresponding $\mathbb{Z}_{2}$ as one would have expected. We show that only the origin-independent part of the Berry phase gives the correct bulk-boundary correspondence by its $π$-quantized values. The resulting $\mathbb{Z}_{2}$ invariant depends on the choice of the 1D unit cell (defined by the nanoribbon termination) and is shown to be connected to the symmetry eigenvalues of the wave functions at the center and boundary of the Brillouin zone. Using the cove-edged GNRs as examples, we demonstrate the existence of localized states at the end of some GNR segments and at the junction between two GNRs based on a topological analysis. The current results are expected to shed light on the design of electronic devices based on GNRs as well as the understanding of the topological features in 1D systems.

cond-mat.mes-hall

In-situ strain tuning of the Dirac surface states in Bi2Se3 films

Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in-situ x-ray diffraction and in-situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting reversible changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.

cond-mat.mtrl-sci

Electrical valley filtering in transition metal dichalcogenides

This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and perform the study with both a k.p based analytic method and a recursive Green's function based numerical method. The study yields the transmission coefficient as a function of incident energy and transverse wave vector, for holes going through lateral quantum barriers oriented in either armchair or zigzag directions, in both homogeneous and heterogeneous systems. The main findings are the following: 1) the tunneling current valley polarization increases with increasing barrier width or height, 2) both the valley-orbit interaction and band structure warping contribute to valley-dependent tunneling, with the former contribution being manifest in structures with asymmetric potential barriers, and the latter being orientation-dependent and reaching maximum for transmission in the armchair direction, and 3) for transmission ~ 0.1, a tunneling current valley polarization of the order of 10% can be achieved.

cond-mat.mes-hall

Gapped Electronic Structure of Epitaxial Stanene on InSb(111)

Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

cond-mat.mtrl-sci

Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement

Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multi-junctions is critical to achieve carrier confinement. Analogously, we report successful synthesis of monolayer WS2/WS2(1-x)Se2x/WS2 multi-junction lateral heterostructure via direct growth by chemical vapor deposition. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine its lateral compositional profile. More importantly, using microwave impedance microscopy, we demonstrate that the local photoconductivity in the alloy region can be tailored and enhanced by 2 orders of magnitude over pure WS2. Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. Our work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.

cond-mat.mtrl-sci

Elemental topological Dirac semimetal: α-Sn on InSb(111)

Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in epitaxially-grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator (TI) phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

cond-mat.mtrl-sci

Spin Texture in Type-II Weyl Semimetal WTe2

We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its extremely large and nonsaturating magnetoresistance.

cond-mat.mtrl-sci