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arXiv · 1711.08523

Gapped Electronic Structure of Epitaxial Stanene on InSb(111)

Cai-Zhi Xu·Yang-Hao Chan·Peng Chen·Xiaoxiong Wang·David Flötotto·Joseph Andrew Hlevyack·Guang Bian·Sung-Kwan Mo·Mei-Yin Chou·Tai-Chang Chiang
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Abstract

Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

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Cai-Zhi Xu, Yang-Hao Chan, Peng Chen, Xiaoxiong Wang, David Flötotto, Joseph Andrew Hlevyack, Guang Bian, Sung-Kwan Mo, Mei-Yin Chou, Tai-Chang Chiang. 2017-11-22. Gapped Electronic Structure of Epitaxial Stanene on InSb(111). https://doi.org/10.1103/physrevb.97.035122

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