arXiv subjects

Meiyong Liao

Publications and source records attributed to Meiyong Liao.

5 recordsLinked to original sources

arXiv2026

Roadmap on UV-C photodetectors: materials, applications and industry perspectives

UV-C photodetectors are poised to play an increasingly important role in future photonic technologies, driven by the rapid emergence of UV-C light sources and new wide bandgap semiconductors. These advances are enabling new levels of spectral selectivity, radiation hardness, sensitivity, and device integration, while opening opportunities across a broad range of applications. This roadmap provides a comprehensive overview of the current landscape of UV-C photodetection, spanning established and emerging material platforms (Ga2O3, AlGaN, BN, diamond, MgZnO, 2-dimensional materials, metal halide perovskites, micro-electromechanical systems), and their applications in metrology, astronomy, communications, environmental monitoring, fire detection, missile warning, gas sensing, and medical diagnostics. By identifying opportunities, bottlenecks, and future directions, this roadmap aims to support both newcomers and established researchers, with the aim of accelerating the translation of UV-C photodetectors into impactful technologies.

physics.app-ph↗

arXiv2021

Exceptional Point and Cross-Relaxation Effect in a Hybrid Quantum System

Exceptional points (EPs) are exotic degeneracies of non-Hermitian systems, where the eigenvalues and the corresponding eigenvectors simultaneously coalesce in parameter space, and these degeneracies are sensitive to tiny perturbations on the system. Here we report an experimental observation of the EP in a hybrid quantum system consisting of dense nitrogen (P1) centers in diamond coupled to a coplanar-waveguide resonator. These P1 centers can be divided into three subensembles of spins, and cross relaxation occurs among them. As a new method to demonstrate this EP, we pump a given spin subensemble with a drive field to tune the magnon-photon coupling in a wide range. We observe the EP in the middle spin subensemble coupled to the resonator mode, irrespective of which spin subensemble is actually driven. This robustness of the EP against pumping reveals the key role of the cross relaxation in P1 centers. It offers a novel way to convincingly prove the existence of the cross-relaxation effect via the EP.

quant-ph↗

arXiv2020

Effect of deep-defect excitation on mechanical energy dissipation of single-crystal diamond

The ultra-wide bandgap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are inactive at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures. A two-level model with deep energies is proposed to well explain the energy dissipation at elevated temperatures. It is evident that the removal of boron impurities can substantially increase the quality factor of room-temperature diamond mechanical resonators. The deep-energy nature of nitrogen bestows single-crystal diamond with outstanding low-intrinsic energy dissipation in mechanical resonators at room temperature or above.

physics.app-ph↗

arXiv2018

On-chip self-sensing enhancing actuation for MEMS/NEMS with large efficiency

The implementation of on-chip MEMS/NEMS transducers for arbitrary resonators is difficult due to a number of difficulties such as material choice, large dissipation, restriction in high frequency, low sensitivity, poor reliability, and poor integrability. We show a universal on-chip transduction scheme, which can be adapted to any MEMS/NEMS resonator. We achieve all electrical, on-chip MEMS/NEMS for any resonator.

physics.app-ph↗

arXiv2017

Interfacial energy barrier height of Al$_2$O$_3$/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

The interfacial band configuration of the high-k dielectric Al$_2$O$_3$ deposited at 120°C by atomic layer deposition (ALD) on boron- and phosphorus-doped hydrogen-terminated (111) diamond was investigated. Performing X-ray photoelectron spectroscopy measurements of core level binding energies and valence band maxima values, the valence band offsets of both heterojunctions are concluded to be ΔE$_V$ = 1.8 eV and ΔE$_V$ = 2.7 eV for the Al$_2$O$_3$/H(111)p and the Al$_2$O$_3$/H(111)n respectively. The ALD Al$_2$O$_3$ bandgap energy was measured from the O 1s photoelectron energy loss spectra to be $E_G^{ Al_2O_3}$ = 7.1 eV. The interfacial band diagram configuration is concluded to be of type II for both Al$_2$O$_3$/H(111)p and Al$_2$O$_3$/H(111)n heterostructures having conduction band offsets of ΔE$_C$ = 0.2 eV and ΔE$_C$ = 1.1 eV respectively. The use of doped (111) hydrogen-terminated diamond for developing future diamond MOSFET is discussed.

cond-mat.mtrl-sci↗