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Mengke Ha

Publications and source records attributed to Mengke Ha.

5 recordsLinked to original sources

High-quality Nano-patterning of Oxide Interfaces Using Transferred Gold Mask

Complex oxide interfaces, such as $\mathrm{SrTiO_3}$ and $\mathrm{KTaO_3}$ based heterostructures, host rich correlated phenomena with strong potential for advanced device applications. However, these interfaces are extremely susceptible to contamination and defect formation during nanofabrication, which often compromises device performance. Here, we present a solvent-free method for patterning oxide interfaces by employing high-resolution transferable thin metal masks in conjunction with oxygen-enriched $\mathrm{Ar^+}$ ion milling, which enables a clean and well-controlled nanofabrication process. Transport measurements demonstrate that the fabricated devices preserve their intrinsic properties, including high carrier mobilities, with negligible degradation compared to the pristine interfaces. This technique offers a convenient and robust route for engineering high-performance oxide electronic devices with precisely tailored transport characteristics.

cond-mat.mtrl-sci

Reconfigurable Oxide Nanoelectronics by Tip-induced Electron Delocalization

Reconfigurable oxide nanoelectronics, enabled by conductive atomic force microscope (cAFM) lithography, have established complex oxide interfaces as a promising platform for quantum engineering that harnesses emergent phenomena for advanced functionalities. However, this cAFM nanofabrication process can only occur in the air, with simultaneous device decay described under the "water-cycle" writing mechanism. These restrictions pose ongoing challenges for device optimization in the quantum regime at mK temperatures. Here, we demonstrate a "waterless" cAFM lithography approach that is compatible with vacuum and cryogenic environments. Through oxygen vacancy engineering at the LaAlO$_3$/SrTiO$_3$ interface, we have achieved nonvolatile and reconfigurable cAFM control of nanoscale interfacial polaron-electron liquid transition at mK temperatures with an ultrafine line resolution of 0.85 nm. Supported by first-principles calculations and drift-diffusion modeling, we show that tip-controlled oxygen vacancy electromigration plays a key role. This advancement bridges reconfigurable device fabrication and concurrent characterization in situ at mK temperatures, and establishes a versatile Hubbard toolbox for engineering programmable quantum phases in correlated oxides.

cond-mat.mes-hall

Time-Reversal Symmetry Protected Transport at Correlated Oxide Interfaces

Time-reversal symmetry (TRS) protection is core to topological physics, yet its role in correlated oxides-typically non-topological-remains underexplored. This limit hampers the potential in engineering exotic quantum states by fusing TRS protection and the rich emergent phenomena in the oxide platform. Here, we report evidence of a TRS-protected subband at oxygen vacancy-free LaAlO3/SrTiO3 interfaces. This subband causes a low-field quantum oscillation with anomalous characters: exceptionally light electron mass, aperiodicity, and susceptibility to magnetic fields. All findings align with a Rashba model in which TRS-protected transport occurs along quasi-1D ferroelastic domain walls, which possess a Dirac band topology and a giant Rashba spin-orbit coupling, two orders stronger than the 2D interface. Our results deepen the understanding of SrTiO3-based electron systems, unveiling an appealing new platform for quantum engineering.

cond-mat.mes-hall

A Milli-Kelvin Atomic Force Microscope Made of Glass

Milli-Kelvin atomic force microscopy (mK-AFM) presents an ongoing experimental challenge due to the intense vibrations in a cryogen-free dilution refrigerator and the low cooling power available at mK temperatures. A viable approach is to make the system exceptionally rigid and thermally insulating to decouple external vibrations and isolate heat dissipation from the piezo elements. Here, we present a low-cost and large scan-range mK-AFM that operates below 100 mK. All the essential parts of our mK-AFM, including the scanners, tip assembly, and microscope body, are custom-made of fused silica glass by taking advantage of its high specific modulus, extremely low thermal expansion coefficient, and excellent thermal insulation properties. We carefully balance the scan range (25 ${\mu}$m $\times$ 25 ${\mu}$m), heat dissipation, and stiffness of the system to reach optimal performance at mK temperatures.

physics.ins-det

Domain wall nature of sketched LaAlO3/SrTiO3 nanowires

The rich electron correlations and highly coherent transport in reconfigurable devices sketched by a conductive atomic force microscope tip at the LaAlO3/SrTiO3 interface have enabled the oxide platform an ideal playground for studying correlated electrons and quantum technological applications. Why these one-dimensional devices possess enhanced properties over the two-dimensional interface, however, has remained elusive. Here we provide evidence that one-dimensional LaAlO3/SrTiO3 nanowires are intrinsically ferroelastic domain walls by nature through thermodynamic study. We have observed spreading resistance anomalies under thermo-stimulus and temperature cycles, with characteristic temperatures matching domain wall polarity. This information is crucial in understanding the novel phenomena including superconductivity and high mobility quantum transport.

cond-mat.mes-hall