arXiv subjects

Miaofang Chi

Publications and source records attributed to Miaofang Chi.

27 records · Page 2Linked to original sources

arXiv2023

Colossal optical anisotropy from atomic-scale modulations

In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses.

physics.optics↗

arXiv2021

Interferometric 4D-STEM for Lattice Distortion and Interlayer Spacing Measurements in Bilayer and Trilayer Two-dimensional Materials

Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or the stacking sequence of trilayer materials. To fully understand and control the unique properties of these few-layer materials, a technique that can provide information about their local in-plane structural deformations, twist direction, and out-of-plane structure is needed. In principle, interference in overlap regions of Bragg disks originating from separate layers of a material encodes three-dimensional information about the relative positions of atoms in the corresponding layers. Here, we describe an interferometric four-dimensional scanning transmission electron microscopy technique that utilizes this phenomenon to extract precise structural information from few-layer materials with nm-scale resolution. We demonstrate how this technique enables measurement of local pm-scale in-plane lattice distortions as well as twist direction and average interlayer spacings in bilayer and trilayer graphene, and therefore provides a means to better understand the interplay between electronic properties and precise structural arrangements of few-layer 2D materials.

cond-mat.mtrl-sci↗

arXiv2021

Site Mixing for Engineering Magnetic Topological Insulators

The van der Waals compound, MnBi$_2$Te$_4$, is the first intrinsic magnetic topological insulator, providing a materials platform for exploring exotic quantum phenomena such as the axion insulator state and the quantum anomalous Hall effect. However, intrinsic structural imperfections lead to bulk conductivity, and the roles of magnetic defects are still unknown. With higher concentrations of same types of magnetic defects, the isostructural compound MnSb$_2$Te$_4$ is a better model system for a systematic investigation of the connections among magnetic, topology and lattice defects. In this work, the impact of antisite defects on the magnetism and electronic structure is studied in MnSb$_2$Te$_4$. Mn-Sb site mixing leads to complex magnetic structures and tunes the interlayer magnetic coupling between antiferromagnetic and ferromagnetic. The detailed nonstoichiometry and site-mixing of MnSb$_2$Te$_4$ crystals depend on the growth parameters, which can lead to $\approx$40\% of Mn sites occupied by Sb and $\approx$15\% of Sb sites by Mn in as-grown crystals. Single crystal neutron diffraction and electron microscopy studies show nearly random distribution of the antisite defects. Band structure calculations suggest that the Mn-Sb site-mixing favors a FM interlayer coupling, consistent with experimental observation, but is detrimental to the band inversion required for a nontrivial topology. Our results suggest a long range magnetic order of Mn ions sitting on Bi sites in MnBi$_2$Te$_4$. The effects of site mixing should be considered in all layered heterostructures that consist of alternating magnetic and topological layers, including the entire family of MnTe(Bi$_2$Te$_3$)$_n$, its Sb analogs and their solid solution.

cond-mat.mtrl-sci↗

arXiv2019

Nanoscale Interlayer Defects in Iron Arsenides

Using a local real-space microscopy probe, we discover evidence of nanoscale interlayer defects along the c-crystallographic direction in BaFe2As2 (122) based iron-arsenide superconductors. We find ordered 122 atomic arrangements within the ab-plane, and within regions of ~10 to 20 nm size perpendicular to this plane. While the FeAs substructure is very rigid, Ba ions are relatively weakly bound and can be displaced from the 122, forming stacking faults resulting in the physical separation of the 122 between adjacent ordered domains. The evidence for interlayer defects between the FeAs superconducting planes gives perspective on the minimal connection between interlayer chemical disorder and high-temperature superconductivity. In particular, the Cooper pairs may be finding a way around such localized interlayer defects through a percolative path of the ordered layered 122 lattice that may not affect Tc.

cond-mat.supr-con↗

arXiv2018

Antisite pairs suppress the thermal conductivity of BAs

BAs was predicted to have an unusually high thermal conductivity at room temperature of 2000$\,$Wm$^{-1}$$\,$K$^{-1}$, comparable to that of diamond. However, the experimentally measured thermal conductivity of BAs single crystals is an order of magnitude lower. To identify the origin of this large inconsistency, we investigated the lattice structure and potential defects in BAs single crystals at atomic scale using aberration-corrected scanning transmission electron microscopy (STEM). Rather than finding a large concentration As vacancies ($V_\mathrm{As}$), as widely thought to dominate the thermal resistance in BAs crystals, our STEM results showed enhanced intensity of some B columns and reduced intensity of some As columns, suggesting the presence of antisite defects with As$_\mathrm{B}$ (As-atom on B site) and B$_\mathrm{As}$ (B-atom on As site) with significant concentrations. Further calculations show that the antisite pair with As$_\mathrm{B}$ next to B$_\mathrm{As}$ is preferred energetically among the different types of point defects investigated, and confirm that such defects lower the thermal conductivity for BAs. Using a concentration of 6.6$\pm$3$\times$10$^{20}$$\,$cm$^{-3}$ for the antisite pairs estimated from STEM images, thermal conductivity is estimated to be 65-100$\,$Wm$^{-1}$$\,$K$^{-1}$, in reasonable agreement with our measured value. Our study suggests that As$_\mathrm{B}$-B$_\mathrm{As}$ antisite pairs are the primary lattice defects suppressing thermal conductivity of BAs. Possible approaches are proposed for growth of high quality crystals or films with high thermal conductivity.

cond-mat.mtrl-sci↗

arXiv2015

Metallicity of Ca2Cu6P5 with Single and Double Copper-Pnictide Layers

We report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca2Cu6P5 and compare with CaCu(2-x)P2. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP4, similar to Fe-As and Fe-Se layers (with FeAs4, FeSe4) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both Ca2Cu6P5 and CaCu(2-x)P2 have temperature-independent magnetic susceptibility and show metallic behavior with no evidence of either magnetic ordering or superconductivity down to 1.8 K. CaCu(2-x)P2 is slightly off-stoichiometric, with delta = 0.14. Theoretical calculations suggest that unlike Fe 3d-based magnetic materials with a large density of states (DOS) at the Fermi surface, Cu have comparatively low DOS, with the majority of the 3d spectral weight located well below Fermi level. The room-temperature resistivity value of Ca2Cu6P5 is only 9 micro ohm-cm, due to a substantial plasma frequency and an inferred electron-phonon coupling lambda of 0.073 (significantly smaller than that of metallic Cu). Also, microscopy result shows that Cu-Cu distance along the c-axis within the double layers can be very short (2.5 A), even shorter than metallic elemental copper bond (2.56 A). The value of dp over dT for CaCu(2-x)P2 at 300 K is approximately three times larger than in Ca2Cu6P5, which suggests the likelihood of stronger electron-phonon coupling. This study shows that the details of Cu-P layers and bonding are important for their transport characteristics. In addition, it emphasizes the remarkable character of the DOS of '122' iron-based materials, despite much structural similarities.

cond-mat.supr-con↗

arXiv2013

Room-temperature multiferroic hexagonal LuFeO$_3$ films

The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO$_3$ films are room-temperature multiferroics.

cond-mat.mtrl-sci↗

arXiv2012

Growth diagram and magnetic properties of hexagonal LuFe$_2$O$_4$ thin films

A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments. The LuFe$_2$O$_4$ phase can only be grown in a small range of temperature and O$_2$ pressure conditions. An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface. Superparamagnetism is observed in LuFe$_2$O$_4$ film and is explained in terms of the effect of the impurity h-LuFeO$_3$ phase and structural defects .

cond-mat.mtrl-sci↗

arXiv2008

Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface

Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO$_{3}$ film on a SrTiO$_{3}$ substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel.

cond-mat.mtrl-sci↗