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Michael N. Leuenberger

Publications and source records attributed to Michael N. Leuenberger.

At least 19 recordsLinked to original sources

Mirror-Constrained Optical Hall Rectification in Asymmetric Gold Gratings:\\ Edelstein Conversion and a Phase-Seeded Kerr Four-Wave Mixing Instability

Transverse optical rectification has been reported in a one-dimensional asymmetric Au grating even though an ideal profile $h(x)$ retains the $xz$ mirror $\Me:y\to-y$. Because $J_y$ is odd under $\Me$, whereas the $p$-polarized bilinears $|E_x|^2$, $|E_z|^2$, and $\mathrm{Re}(E_xE_z^*)$ are even, the transverse dc current requires a distinct mirror-odd factor $\Lamy$. We formulate a symmetry-complete effective model combining the origin-independent cell invariant $\Astr=\mathrm{Im}(h_1^2h_2^*)$, Drude--Edelstein spin polarization, and spin--orbit conversion. We then propose a dynamical realization of $\Lamy$ for a finite-width device. A driven pump-like plasmonic mode at $k_y\simeq0$ generates a mirror pair of transverse surface-plasmon-polariton quasinormal modes $(K_x,\pm q_y)$ through the same third-order susceptibility that produces self- and cross-Kerr shifts. Four-wave mixing creates the pair and locks its phase sum but, by itself, cannot change the pair-population difference. Weak coherent backscattering makes the relative drive phase observable; a small phase difference from incident $k_y$, spot displacement, edges, or disorder then unfolds a Kerr directional instability and deterministically selects its sign. The resulting population imbalance supplies the dynamical mirror-odd factor $\Ldyn=λ_ηη$ in the structure-dependent $\Astr\Lamy\langle j_xs_y\rangle_t$ side-jump-like channel, which vanishes for the centered symmetric grating because $\Astr=0$. We give the complete three-mode equations, the pump-only and saturated-state Bogoliubov problems, the imperfect-pitchfork reduction, and a validated normalized numerical realization. The normalized equations exhibit a robust supercritical pitchfork with an approximately one-half critical exponent and phase-reversed branch selection.

cond-mat.mes-hall↗

Universal tuning of Förster resonance energy transfer in gate-programmable conductor-dielectric-conductor heterostructures

We develop a quantum-electrodynamical theory for universal tuning of spontaneous emission and Förster resonance energy transfer (FRET) in a material-agnostic conductor-dielectric-conductor heterostructure. The platform consists of a dielectric spacer of thickness $W$ bounded by two gate-tunable two-dimensional conductors. The only microscopic input from the surrounding materials is the transverse-magnetic and transverse-electric reflection amplitudes $r_{\TM/\TE}(q_ρ,ω)$ of the two sheets. Starting from the QED photon propagator, we derive the retarded Maxwell dyadic, the vacuum/Hadamard field propagator, and the time-ordered Feynman propagator in the same geometry. The spontaneous-emission rate is controlled by the local vacuum spectral density, while FRET is controlled by the nonlocal retarded/advanced product $\obG_{\text R}(\bx_D,\bx_A;ω_D)\Im\,\balpha_A(ω_D)\obG_{\text A}(\bx_A,\bx_D;ω_D)$. In the transparent limit $r_{\TM}\to 0$, the near-field FRET rate recovers the bulk $x_ρ^{-6}$ law. In the Dirichlet/PEC branch $r_{\TM}\to -1$, the gapless transverse mode is removed and the donor-acceptor coupling acquires a Bessel-$K$ envelope, giving an exponentially screened FRET rate $Γ_{D\to A}\propto\exp(-2πx_ρ/W)$ at large lateral separation. In the opposite Neumann/PMC-like branch $r_{\TM}\to 1^{-}$, a nearly gapless transverse mode survives and produces a wide quasi-two-dimensional logarithmic propagator, enhancing the nonlocal electromagnetic coupling over a gate-programmable range $x_{ρ,*}\sim W/(1-r_{\TM})$. For graphene-Er implementations, the same retarded Green tensor also separates dissipative on-shell Er-to-graphene decay, governed by its absorptive part, from dispersive virtual-plasmon-mediated Er-Er coupling, governed by its reactive part; a plasmonic band gap can suppress the former while retaining the latter.

cond-mat.mes-hall↗

Green's Function Methods for Computing Supercurrents in Josephson Junctions

Interest in Josephson junctions (JJs) has increased rapidly in recent years not only because of their use in qubits and other quantum devices but also due to the unique physics supported by the JJs. The advent of various novel quantum materials for both the barrier region and the superconducting leads has led to the possibility of adding new functionalities to the JJs. Thus, there is a growing need for accurate modeling of the JJs and related systems to enable their predictive control and atomistic level understanding. This review presents an in-depth discussion of a Green's function-based formalism for computing supercurrents in JJs. The formulation is tailored for large-scale atomistic simulations and encompasses both dc and ac supercurrents. We hope that this review will provide a timely and comprehensive reference for researchers as well as beginning practitioners interested in Green's-function-based methods to model supercurrents in JJs.

cond-mat.supr-con↗

Universal tuning of quantum electrodynamic interactions from power laws to exponential screening and logarithmic antiscreening

We introduce a material-agnostic platform for \emph{universal tuning of quantum electrodynamic interactions from power laws to exponential screening and logarithmic antiscreening}, realized in a dielectric spacer bounded by two gate-tunable two-dimensional conductors. The structured electromagnetic environment is completely specified by the transverse-magnetic and transverse-electric reflection amplitudes \(r_{\mathrm{TM/TE}}(q_\perp,ω)\) of the sheets. Starting from the QED action and a Green-function formulation, we resum the multiple-reflection series and show that the interactions are governed by a discrete set of transverse cavity harmonics. In the transparent limit \(r_{\rm TM}\to 0\), the interactions reduce to bulk power laws \(U(ρ)\propto ρ^{-α}\). In the reflective limit \(|r_{\rm TM}|\to 1\), the \emph{phase/parity} of \(r_{\rm TM}\) selects two qualitatively distinct branches: a Dirichlet/PEC (screening) branch \(r_{\rm TM}\to -1\) that removes the gapless transverse mode and yields an evanescent Bessel-\(K\) function \(U(ρ)\propto e^{-πρ/d}/\sqrt{ρ/d}\) at \(ρ\gg d\), and an opposite Neumann/PMC-like (antiscreening) branch \(r_{\rm TM}\to +1\) that retains a gapless mode and can strongly enhance the long-range tail. Thus, the same heterostructure provides in situ electrical control over both the \emph{range} and the \emph{strength} of mediated interactions.

cond-mat.mes-hall↗

Tunable giant Purcell enhancement of quantum light emitters by means of acoustic graphene plasmons

Inspired by the remarkable ability of plasmons to boost radiative emission rates, we propose leveraging acoustic graphene plasmons (AGPs) to realize tunable, giant Purcell enhancements for single-photon, entangled-photon, and multipolar quantum emitters. These AGPs are localized inside a cavity defined by a graphene sheet and a metallic nanocube and filled with a dielectric of thickness of a few nanometers and consisting of stacked layers of 2D materials, containing impurities or defects that act as quantum light emitters. Through finite-difference time domain (FDTD) calculations, we show that this geometry can achieve giant Purcell enhancement factors over a large portion of the infrared (IR) spectrum, up to 6 orders of magnitude in the mid-IR and up to 4 orders of magnitude at telecommunications wavelengths, reaching quantum efficiencies of 95\% and 89\%, respectively, with high-mobility graphene. We obtain Purcell enhancement factors for single-photon electric dipole (E1), electric quadrupole (E2), and electric octupole (E3) transitions and two-photon spontaneous emission (2PSE) transitions, of the orders of $10^{4}$, $10^{7}$, $10^{9}$, and $10^9$, respectively, and a quantum efficiency of 79\% for entangled-photon emission with high-mobility graphene at a wavelength of $λ=1.55$ $μ$m. Importantly, AGP mode frequencies depend on the graphene Fermi energy, which can be tuned via electrostatic gating to modulate fluorescence enhancement in real time. As an example, we consider the Purcell enhancement of spontaneous single- and two-photon emissions from an erbium atom inside single-layer (SL) WS$_2$. Our results could be useful for electrically tunable quantum emitter devices with applications in quantum communication and quantum information processing.

cond-mat.mes-hall↗

On-chip high-order parametric downconversion in the excitonic Mott insulator Nb$_3$Cl$_8$ for programmable multiphoton entangled states

Spontaneous parametric downconversion (SPDC) and four-wave mixing in $χ^{(2)}$ and $χ^{(3)}$ media underpin most entangled-photon sources, but direct generation of higher-order entangled multiphoton states by $n$-th order parametric downconversion remains extremely challenging because conventional materials exhibit tiny high-order nonlinearities. Here we show that single-layer Nb$_3$Cl$_8$, an excitonic Mott insulator on a breathing Kagome lattice, supports exceptionally large nonlinear susceptibilities up to seventh order. Many-body GW--Bethe--Salpeter and time-dependent BSE / Kadanoff--Baym simulations yield resonant $χ^{(2)}$--$χ^{(7)}$ for monolayer Nb$_3$Cl$_8$, with $|χ^{(4)}|$ and $|χ^{(5)}|$ surpassing values in prototypical transition metal dichalcogenides by 5--9 orders of magnitude. We trace this enhancement to flat bands and strongly bound Frenkel excitons with ferroelectrically aligned out-of-plane dipoles. Building on experimentally demonstrated 1$\times N$ integrated beam splitters with arbitrary power ratios, we propose an on-chip architecture where each output arm hosts an Nb$_3$Cl$_8$ patch, optionally gated by graphene to tune the complex $n$-photon amplitudes. Using the ab-initio $χ^{(3)}$ and $χ^{(4)}$ values, we predict that three-photon GHZ$_3$ and four-photon cluster-state sources in this platform can achieve $n$-photon generation rates up to $\sim 10^8$ and $\sim 10^6$ times larger, respectively, than silica-fiber- and MoS$_2$-based implementations with comparable geometry. We derive the quantum Hamiltonian and explicit $n$-photon generation rates for this platform, and show how suitable interferometric networks enable electrically and spectrally tunable GHZ, $W$, and cluster states based on genuine high-order nonlinear processes in a 2D excitonic Mott insulator.

cond-mat.mtrl-sci↗

Emergent Superfluidity of Hard-Core Excitons in Single-Layer Breathing-Kagome Nb$_3$Te$_x$Cl$_{8-x}$

We develop a microscopic theory of superfluidity for hard-core dark excitons on the triangular lattice by mapping the large-$U$ Bose--Hubbard model to an effective XXZ spin-$\frac{1}{2}$ Hamiltonian including virtual hopping processes. Within this framework, we identify the superfluid phase that emerges between the two Mott-insulating endpoints at fillings 0 and 1, and derive its mean-field structure via a canted-spin solution. We then construct the corresponding continuum Landau-Ginzburg (LG) functional and analyze phase fluctuations and vortex dynamics. In two dimensions, the superfluid--normal transition is shown to be governed by a Berezinskii--Kosterlitz--Thouless (BKT) mechanism with a stiffness determined by microscopic parameters. Our results provide a unified description connecting lattice-scale exciton dynamics to continuum critical behavior in triangular geometries.

cond-mat.mtrl-sci↗

Multiferroic Dark Excitonic Mott Insulator in the Breathing-Kagome Lattice Material Nb$_3$Cl$_8$

Flat electronic bands strongly enhance Coulomb interactions and can stabilize unconventional insulating states. Motivated by the recent discovery of flat bands in breathing Kagome lattices, we use first-principles GW--Bethe--Salpeter theory to investigate the excitonic spectrum of single-layer Nb$_3$Cl$_8$. We find a dark spin-triplet Frenkel exciton whose spectral peak lies at negative energy ($-0.14$~eV) relative to the quasiparticle gap, directly signaling a preformed bound state and an excitonic Mott insulating phase potentially stable at room temperature. Bright excitons appear at $0.94$~eV and $1.21$~eV, with ultra-large binding energies of $2.05$~eV and $1.77$~eV. By mapping the low-energy dynamics onto a spin-1 Hubbard model on a triangular lattice, we show that frustrated antiferromagnetic and ferroelectric tendencies naturally emerge. These results identify Nb$_3$Cl$_8$ as a candidate multiferroic dark excitonic insulator, opening a pathway to correlated quantum phases in two dimensions.

cond-mat.mtrl-sci↗

Er$_\mathrm{Al}$:Al$_2$O$_3$ for Telecom-Band Photonics: Electronic Structure and Optical Properties

Er-doped Al$_2$O$_3$ is a promising host for telecom-band integrated photonics. Here we combine ab initio calculations with a symmetry-resolved analysis to elucidate substitutional Er on the Al site (Er$_\mathrm{Al}$) in $α$-Al$_2$O$_3$. First-principles relaxations confirm the structural stability of Er$_\mathrm{Al}$. We then use the local trigonal crystal-field symmetry to classify the Er-derived impurity levels by irreducible representations and to derive polarization-resolved electric-dipole selection rules, explicitly identifying the symmetry-allowed $f$\textendash$d$ hybridization channels. Kubo--Greenwood absorption spectra computed from Kohn--Sham states quantitatively corroborate these symmetry predictions. Furthermore, we connect the calculated intra-$4f$ line strengths to Judd--Ofelt theory, clarifying the role of $4f$\textendash$5d$ admixture in enabling optical activity. Notably, we predict a characteristic absorption near $1.47~μ\mathrm{m}$ (telecom band), relevant for on-chip amplification and emission. To our knowledge, a symmetry-resolved first-principles treatment of Er:Al$_2$O$_3$ with an explicit Judd--Ofelt interpretation has not been reported, providing a transferable framework for tailoring rare-earth dopants in wide-band-gap oxides for integrated photonics. Our results for the optical spectra are in good agreement with experimental data.

cond-mat.mtrl-sci↗

Linear and nonlinear optical response based on many-body GW-Bethe-Salpeter and Kadanoff-Baym approaches for two-dimensional layered semiconductors

The family of 2D layered semiconductors, including transition metal chalcogenides (TMCs) of the form MX (M=Ga, In; X=S, Se, Te) exhibit exceptional nonlinear optical properties. The energetically most favorable crystal ordering for nonlinear response is the AB layer stacking, which breaks central inversion symmetry for an arbitrary number of layers, resulting in non-zero off-diagonal elements of the $χ^{(2n')}$ tensor, $n'$ being a positive integer, for arbitrary thickness of the materials. We perform first-principles many-body calculations of bandstructures and linear and nonlinear optical responses of monolayer (ML) and bulk TMC crystals based on $GW$-Bethe-Salpeter and Kadanoff-Baym approaches in and out of equilibrium, respectively, while taking many-body band gap renormalization and excitonic effects into account. We develop a detailed analysis of the linear and nonlinear optical selection rules by means of group and representation theory. We observe the general trend that the lowest-energy excitons are dark in 2D ML TMCs whereas they are bright or mixed bright-dark in 3D bulk TMCs, which we attribute to the difference between spatially dependent screening in 2D and constant screening in 3D. In particular, we derive general formulas for the nonlinear optical response based on exciton states in semiconductor materials. We find anti-bound excitons in ML GaS, which we attribute to dominant exciton exchange interaction. We show that by choosing elements with larger mass and by reducing the detuning energy it is possible to increase the nonlinear response not only for $χ^{(2)}$ and $χ^{(3)}$, responsible for SHG and third harmonic generation (THG), but also in general for $χ^{(n)}$ nonlinear response with $n>3$, giving rise to high harmonic generation (HHG) in 2D semiconductor materials.

cond-mat.mtrl-sci↗

Tuning the Electronic and Optical Properties of Impurity-Engineered Two-Dimensional Graphullerene Half-Semiconductors

A novel material consisting of a monolayer of C$_{60}$ buckyballs with hexagonal symmetry has recently been observed experimentally, named graphullerene. In this study, we present a comprehensive \textit{ab-initio} theoretical analysis of the electronic and optical properties of both pristine and impurity-engineered monolayer graphullerene using spin-dependent density functional theory (spin-DFT). Our findings reveal that graphullerene is a direct band gap semiconductor with a band gap of approximately 1.5 eV at the $Γ$ point, agreeing well with experimental data. Notably, we demonstrate that by adding impurities, in particular substitutional nitrogen, substitutional boron, or adsorbent hydrogen, to graphullerene results in the formation of spin-dependent deep donor and deep acceptor levels, thereby giving rise to a variety of half-semiconductors. All the impurities exhibit a magnetic moment of approximately $μ_B$ per impurity. This impurity engineering enables the tuning of spin-polarized exciton properties in graphullerene, with spin-dependent band gap energies ranging from 0.43 eV ($λ\sim$ 2.9 $μ$m) to 1.5 eV ($λ\sim$ 820 nm), covering the near-infrared (NIR) and short-wavelength infrared (SWIR) regimes. Our results suggest that both pristine and impurity-engineered graphullerene have significant potential for the development of carbon-based 2D semiconductor spintronic and opto-spintronic devices.

cond-mat.mtrl-sci↗

Spectrally Selective Thermal Emission from Graphene Decorated with Metallic Nanoparticles

We showed in past work that nanopatterned monolayer graphene (NPG) enables spectrally selective thermal emission in the mid-infrared (mid-IR) from 3 to 12 $μ$m. In that case the spectral selection is realized by means of the localized surface plasmon (LSP) resonances inside graphene. Here we show that graphene decorated with metallic nanoparticles, such as Ag nanocubes or nanospheres, also realize spectrally selective thermal emission, but in this case by means of acoustic graphene plasmons (AGPs) localized between graphene and the Ag nanoparticle inside a dielectric material. Our finite-difference time domain (FDTD) calculations show that the spectrally selective thermal radiation emission can be tuned by means of a gate voltage into two different wavelength regimes, namely the atmospherically opaque regime between $λ=5$ $μ$m and $λ=8$ $μ$m or the atmospherically transparent regime between $λ=8$ $μ$m and $λ=12$ $μ$m. This allows for electric switching between radiative heat trapping mode for the fomer regime and radiative cooling mode for the latter regime. Our theoretical results can be used to develop graphene-based thermal management systems for smart fabrics.

cond-mat.mes-hall↗

First-principles study of the electronic and optical properties of Ho$_{\rm W}$ impurities in tungsten disulfide

The electronic and optical properties of single-layer (SL) tungsten disulfide (WS$_2$) in the presence of substitutional Holmium impurities (Ho$_{\rm W}$) are studied. Although Ho is much larger than W, density functional theory (DFT) including spin-orbit coupling is used to show that Ho:SL WS$_2$ is stable. The magnetic moment of the Ho impurity is found to be 4.75$μ_B$ using spin-dependent DFT. The optical selection rules identified in the optical spectrum match exactly the optical selection rules derived by means of group theory. The presence of neutral Ho$_W$ impurities gives rise to localized impurity states (LIS) with f-orbital character in the band structure. Using the Kubo-Greenwood formula and Kohn-Sham orbitals we obtain atom-like sharp transitions in the in-plane and out-of-plane components of the susceptibility tensor, Im$χ_{\parallel}$ and Im$χ_{\perp}$. The optical resonances are in good agreement with experimental data.

cond-mat.mes-hall↗

Plasmonically enhanced tunable spectrally selective NIR and SWIR photodetector based on intercalation doped nanopatterned multilayer graphene

We present a proof of concept for a spectrally selective near-infrared (NIR) and short-wavelength infrared (SWIR) photodetector based on nanopatterned multilayer graphene intercalated with FeCl$_3$ (NPMLG-FeCl$_3$), enabling large modulation p-doping of graphene. The localized surface plasmons (LSPs) on the graphene sheets in NPMLG-FeCl$_3$ allow for electrostatic tuning of the photodetection in the NIR and SWIR regimes from $λ=1.3$ $μ$m to 3 $μ$m, which is out of range for nanopatterned monolayer graphene (NPG). Most importantly, the LSPs along with an optical cavity increase the absorbance from about $N\times 2.6$\% for $N$-layer graphene-FeCl$_3$ (without patterning) to nearly 100\% for NPMLG-FeCl$_3$, where the strong absorbance occurs locally inside the graphene sheets only. Our NIR and SWIR detection scheme relies on the photo-thermoelectric effect induced by asymmetric patterning of the multi-layer graphene (MLG) sheets. The LSPs on the nanopatterned side create hot carriers that give rise to Seebeck photodetection at room temperature achieving a responsivity of $R=6.15\times 10^3$ V/W, a detectivity of $D^*=2.3\times 10^{9}$ Jones, and an ultrafast response time of the order of 100 ns. Our theoretical results pave the way to graphene-based photodetection, optical IR communication, IR color displays, and IR spectroscopy in the NIR, SWIR, mid-wavelength infrared (MWIR), and long-wavelength infrared (LWIR) regimes.

cond-mat.mes-hall↗

Ab-initio calculations for electronic and optical properties of Er$_{\rm W}$ defects in tungsten disulfide

Ab-initio calculations for the electronic and optical properties of single-layer (SL) tungsten disulfide (WS$_2$) in the presence of substitutional Erbium defects (Er$_{\rm W}$) are presented, where the W atom is replaced by an Er atom. Defects usually play an important role in tailoring electronic and optical properties of semiconductors. We show that neutral Er defects lead to localized defect states (LDS) in the band structure due to the f-orbital states of Er, which in turn give rise to sharp transitions in in-plane and out-of-plane optical absorption spectra, $α_{\parallel}$ and $α_{\perp}$. We identify the optical transitions at 3 $μ$m, 1.5 $μ$m, 1.2 $μ$m, 920 nm, 780 nm, 660 nm, and 550 nm to originate from Er$_{\rm W}$ defect states. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both $α_{\parallel}$ and $α_{\perp}$.

cond-mat.mes-hall↗

Plasmonically enhanced spectrally selective narrowband MWIR and LWIR light detection based on hybrid nanopatterned graphene and phase changing vanadium oxide heterostructure operating close to room temperature

We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene (NPG) and vanadium dioxide (VO$_2$) which exhibits a large responsivity of $R\sim 10^4$ V/W, a detectivity exceeding $D^*\sim 10^{10}$ J, and a sensitivity in terms of noise-equivalent power $\mathrm{NEP}\sim 100$ fW/$\sqrt{\rm Hz}$ close to room temperature by taking advantage of the phase change of a thin VO$_2$ film. Our proposed photodetector can reach an absorption of nearly 100\% in monolayer graphene due to localized surface plasmons (LSPs) around the patterned circular holes. The geometry of the nanopattern and an electrostatic gate potential can be used to tune the absorption peak in the mid-IR regime between 3 and 12 $μ$m. After the photon absorption by the NPG sheet and the resulting phase change of VO$_2$ from insulating to metallic phase the applied bias voltage $V_b$ triggers a current through the VO$_2$ sheet, which can be detected electronically in about 1 ms, shorter than the detection times of current VO$_2$ bolometers. Our envisioned mid-IR photodetector reaches detectivities of cryogenically cooled HgCdTe photodetectors and sensitivities larger than VO$_2$ microbolometers while operating close to room temperature.

cond-mat.mes-hall↗

Plasmonically enhanced mid-IR light source based on tunable spectrally and directionally selective thermal emission from nanopatterned graphene

We present a proof of concept for a spectrally selective thermal mid-IR source based on nanopatterned graphene (NPG) with a typical mobility of CVD-grown graphene (up to $3000$ cm$^2$V$^{-1}$s$^{-1}$), ensuring scalability to large areas. For that, we solve the electrostatic problem of a conducting hyperboloid with an elliptical wormhole in the presence of an in-plane electric field. The localized surface plasmons (LSPs) on the NPG sheet allow for the control and tuning of the thermal emission spectrum in the wavelength regime from 3 $μ$m to 12 $μ$m. The LSPs along with an optical cavity increase the emittance of graphene from about 2.3% for pristine graphene to 80% for NPG, thereby outperforming state-of-the-art pristine graphene light sources operating in the near-infrared (NIR) by a factor of 100. A maximum emission power per area of 11x10^3 W/m$^2$ at $T=2000$ K for a bias voltage of $V=23$ V is achieved by Joule heating. By generalizing Planck's theory and considering the nonlocal fluctuation-dissipation theorem with nonlocal response of surface plasmons in graphene in RPA, we show that the coherence length of the graphene plasmons and the thermally emitted photons can be as large as 13 $μ$m and 150 $μ$m, respectively, providing the opportunity to create phased arrays. The spatial phase variation of the coherence allows for beamsteering of the thermal emission in the range between $12^\circ$ and $80^\circ$ by tuning the Fermi energy. Our analysis of the nonlocal hydrodynamic response leads to the conjecture that the diffusion length and viscosity in graphene are frequency-dependent. Using finite-difference time domain (FDTD) calculations, coupled mode theory, and RPA, we develop the model of a mid-IR light source based on NPG, which will pave the way to graphene-based optical mid-IR communication, mid-IR color displays, mid-IR spectroscopy, and virus detection.

cond-mat.mes-hall↗

Wide Angle Dynamically Tunable Enhanced Infrared Absorption on Large Area Nanopatterned Graphene

Enhancing light-matter interaction by exciting Dirac plasmons on nanopatterned monolayer graphene is an efficient route to achieve high infrared absorption. Here, we designed and fabricated the hexagonal planar arrays of nanohole and nanodisk with and without optical cavity to excite Dirac plasmons on the patterned graphene and investigated the role of plasmon lifetime, extinction cross-section, incident light polarization, the angle of incident of light and pattern dimensions on the light absorption spectra.

cond-mat.mes-hall↗