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Michael N. Leuenberger

Publications and source records attributed to Michael N. Leuenberger.

At least 37 records · Page 2Linked to original sources

Room-temperature superparamagnetism due to giant magnetic anisotropy in Mo$_{S}$ defected single-layer MoS$_{2}$

Room-temperature superparamagnetism due to a large magnetic anisotropy energy (MAE) of a single atom magnet has always been a prerequisite for nanoscale magnetic devices. Realization of two dimensional (2D) materials such as single-layer (SL) MoS$_{2}$, has provided new platforms for exploring magnetic effects, which is important for both fundamental research and for industrial applications. Here, we use density functional theory (DFT) to show that the antisite defect (Mo$_{S}$) in SL MoS$_{2}$ is magnetic in nature with a magnetic moment of $μ$ of $\sim$ 2$μ_{B}$ and, remarkably, exhibits an exceptionally large atomic scale MAE$=\varepsilon_{\parallel}-\varepsilon_{\perp}$ of $\sim$500 meV. Our calculations reveal that this giant anisotropy is the joint effect of strong crystal field and significant spin-orbit coupling (SOC). In addition, the magnetic moment $μ$ can be tuned between 1$μ_{B}$ and 3$μ_{B}$ by varying the Fermi energy $\varepsilon_{F}$, which can be achieved either by changing the gate voltage or by chemical doping. We also show that MAE can be raised to $\sim$1 eV with n-type doping of the MoS$_{2}$:Mo$_{S}$ sample. Our systematic investigations deepen our understanding of spin-related phenomena in SL MoS$_{2}$ and could provide a route to nanoscale spintronic devices.

cond-mat.mes-hall↗

Electronic and Optical Properties of Vacancy Defects in Transition Metal Dichalcogenides

A detailed first-principle study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (MX${}_2$; M= transition metal such as Mo, W and X= S, Se, Te), in the presence of vacancy defects (VDs). Defects usually play an important role in tailoring electronic, optical, and magnetic properties of semiconductors. We consider three types of VDs in SL TMDCs i) $X$-vacancy, $X_{2}$-vacancy, and iii) $M$-vacancy. We show that VDs lead to localized defect states (LDS) in the band structure, which in turn give rise to sharp transitions in in-plane and out-of-plane optical susceptibilities, $χ_{\parallel}$ and $χ_{\perp}$. The effects of spin orbit coupling (SOC) are also considered. We find that SOC splitting in LDS is directly related to the atomic number of the transition metal atoms. Apart from electronic and optical properties we also find magnetic signatures (local magnetic moment of $\simμ_{B}$) in MoSe$_{2}$ in the presence of Mo vacancy, which breaks the time reversal symmetry and therefore lifts the Kramers degeneracy. We show that a simple qualitative tight binding model (TBM), involving only the hopping between atoms surrounding the vacancy with an on-site SOC term, is sufficient to capture the essential features of LDS. In addition, the existence of the LDS can be understood from the solution of the 2D Dirac Hamiltonian by employing infinite mass boundary conditions. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both $χ_{\parallel}$ and $χ_{\perp}$.

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Dirac electrons in the presence of matrix potential barrier: application to graphene and topological insulators

Scattering of a 2D Dirac electrons on a rectangular matrix potential barrier is considered using the formalism of spinor transfer matrices. It is shown, in particular, that in the absence of the mass term, the Klein tunneling is not necessarily suppressed but occurs at oblique incidence. The formalism is applied to studying waveguiding modes of the barrier, which are supported by the edge and bulk states. The condition of existence of the uni-directionality property is found. We show that the band of edge states is always finite with massless excitations, while the spectrum of the bulk states, depending on parameters of the barrier, may consist of the infinite or finite band with both, massive and massless, low-energy excitations. The effect of the Zeeman term is considered and the condition of appearance of two distinct energy dependent directions corresponding to the Klein tunneling is found.

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Optical signatures of states bound to vacancy defects in monolayer MoS$_2$

We show that pristine MoS$_2$ single layer (SL) exhibits two bandgaps $E_{g\parallel}=1.9$ eV and $E_{g\perp}=3.2$ eV for the optical in-plane and out-of-plane susceptibilities $χ_\parallel$ and $χ_\perp$, respectively. In particular, we show that odd states bound to vacancy defects (VDs) lead to resonances in $χ_\perp$ inside $E_{g\perp}$ in MoS$_2$ SL with VDs. We use density functional theory, the tight-binding model, and the Dirac equation to study MoS$_2$ SL with three types of VDs: (i) Mo-vacancy, (ii) S$_2$-vacancy, and (iii) 3$\times$MoS$_2$ quantum antidot. The resulting optical spectra identify and characterize the VDs.

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Photoluminescence Quenching in Single-layer MoS2 via Oxygen Plasma Treatment

By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct to indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.

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Magnetic quantum coherence effect in Ni4 molecular transistors

We consider the electron transport in single molecule magnet transistors in the presence of Zeeman spin splitting and magnetic quantum coherence (MQC). The Zeeman interaction is extended along the leads, thereby producing gaps in the energy spectrum which allow electron transport with spin polarized along a certain direction. The MQC induces an effective coupling between localized spin states and continuum spin states in the single molecule magnet and leads, respectively. We investigate the conductance at zero temperature as a function of the applied bias and magnetic field, and show that the MQC is responsible for the appearence of resonances. Accordingly, we name them MQC resonances.

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Two-dimensional Fermionic Hong-Ou-Mandel Interference with Weyl Fermions

We propose a two-dimensional Hong-Ou-Mandel (HOM) type interference experiment for Weyl fermions in graphene and 3D topological insulators. Since Weyl fermions exhibit linear dispersion, similar to photons in vacuum, they can be used to obtain the HOM interference intensity pattern as a function of the delay time between two Weyl fermions. We show that while the Coulomb interaction leads to a significant change in the angle dependence of the tunneling of two identical Weyl fermions incident from opposite sides of a potential barrier, it does not affect the HOM interference pattern, in contrast to previous expectations. We apply our formalism to develop a Weyl fermion beam-splitter (BS) for controlling the transmission and reflection coefficients. We calculate the resulting time-resolved correlation function for two identical Weyl fermions scattering off the BS.

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Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two dimensional nanodevices on MoS2 and other transition metal dichalcogenides.

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Time-dependent density-functional theory of exciton-exciton correlations in the nonlinear optical response

We analyze possible nonlinear exciton-exciton correlation effects in the optical response of semiconductors by using a time-dependent density-functional theory (TDDFT) approach. For this purpose, we derive the nonlinear (third-order) TDDFT equation for the excitonic polarization. In this equation, the nonlinear time-dependent effects are described by the time-dependent (non-adiabatic) part of the effective exciton-exciton interaction, which depends on the exchange-correlation (XC) kernel. We apply the approach to study the nonlinear optical response of a GaAs quantum well. In particular, we calculate the 2D Fourier spectra of the system and compare it with experimental data. We find that it is necessary to use a non-adiabatic XC kernel to describe excitonic bound states - biexcitons, which are formed due to the retarded TDDFT exciton-exciton interaction.

cond-mat.mtrl-sci↗

Giant Faraday effect due to Pauli exclusion principle in 3D topological insulators

Experiments using ARPES, which is based on the photoelectric effect, show that the surface states in 3D topological insulators (TI) are helical. Here we consider Weyl interface fermions due to band inversion in narrow-bandgap semiconductors, such as Pb$_{1-x}$Sn$_{x}$Te. The positive and negative energy solutions can be identified by means of opposite helicity in terms of the spin helicity operator in 3D TI as $\hat{h}_{\textrm{TI}}=\left(1/\left|p_{\bot}\right|\right)β\left(\boldsymbolσ_{\perp}\times\boldsymbol{p}_{\perp}\right)\cdot\boldsymbol{\hat{z}}$, where $β$ is a Dirac matrix and $\boldsymbol{\hat{z}}$ points perpendicular to the interface. Using the 3D Dirac equation and bandstructure calculations we show that the transitions between positive and negative energy solutions, giving rise to electron-hole pairs, obey strict optical selection rules. In order to demonstrate the consequences of these selection rules, we consider the Faraday effect due to Pauli exclusion principle in a pump-probe setup using a 3D TI double interface of a PbTe/Pb$_{0.31}$Sn$_{0.69}$Te/PbTe heterostructure. For that we calculate the optical conductivity tensor of this heterostructure, which we use to solve Maxwell's equations. The Faraday rotation angle exhibits oscillations as a function of probe wavelength and thickness of the heterostructure. The maxima in the Faraday rotation angle are of the order of millirads.

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Decoherence and Quantum Interference assisted electron trapping in a quantum dot

We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature.

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A 3D topological insulator quantum dot for optically controlled quantum memory and quantum computing

We present the model of a quantum dot (QD) consisting of a spherical core-bulk heterostructure made of 3D topological insulator (TI) materials, such as PbTe/Pb$_{0.31}$Sn$_{0.69}$Te, with bound massless and helical Weyl states existing at the interface and being confined in all three dimensions. The number of bound states can be controlled by tuning the size of the QD and the magnitude of the core and bulk energy gaps, which determine the confining potential. We demonstrate that such bound Weyl states can be realized for QD sizes of few nanometers. We identify the spin locking and the Kramers pairs, both hallmarks of 3D TIs. In contrast to topologically trivial semiconductor QDs, the confined massless Weyl states in 3D TI QDs are localized at the interface of the QD and exhibit a mirror symmetry in the energy spectrum. We find strict optical selection rules satisfied by both interband and intraband transitions that depend on the polarization of electron-hole pairs and therefore give rise to the Faraday effect due to Pauli exclusion principle. We show that the semi-classical Faraday effect can be used to read out spin quantum memory. When a 3D TI QD is embedded inside a cavity, the single-photon Faraday rotation provides the possibility to implement optically mediated quantum teleportation and quantum information processing with 3D TI QDs, where the qubit is defined by either an electron-hole pair, a single electron spin, or a single hole spin in a 3D TI QD. Remarkably, the combination of inter- and intraband transition gives rise to a large dipole moment of up to 450 Debye. Therefore, the strong-coupling regime can be reached for a cavity quality factor of $Q\approx10^{4}$ in the infrared wavelength regime of around $10\:μ$m.

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Effect of Monolayer Thickness Fluctuations on Coherent Exciton Coupling in Single Quantum Wells

Monolayer fluctuations in the thickness of a semiconductor quantum well (QW) lead to three types of excitons, located in the narrower, average and thicker regions of the QW, which are clearly resolved in optical spectra. Whether or not these excitons are coherently coupled via Coulomb interactions is a long-standing debate. We demonstrate that different types of disorder in QWs distinctly affects the coherent coupling and that the coupling strength can be quantitatively measured using optical two-dimensional Fourier transform spectroscopy. We prove experimentally and theoretically that in narrow quantum wells the coherent coupling occurs predominantly between excitons residing in the disorder-free areas of the QWs and those residing in the plateau-type disorder. In contrast, excitons localized in the fault-type disorder potentials do not coherently couple to other excitons.

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Deterministic generation of N00N states using quantum dots in a cavity

Compared to classical light sources, quantum sources based on N00N states consisting of $N$ photons achieve an $N$-times higher phase sensitivity, giving rise to super-resolution. N00N-state creation schemes based on linear optics and projective measurements only have a success probability $p$ that decreases exponentially with $N$, e.g. $p=4.4\times 10^{-14}$ for N=20. Feed-forward improves the scaling but $N$ fluctuates nondeterministically in each attempt. Schemes based on parametric down-conversion suffer from low production efficiency and low fidelity. A recent scheme based on atoms in a cavity combines deterministic time evolution, local unitary operations, and projective measurements. Here we propose a novel scheme based on the off-resonant interaction of $N$ photons with four semiconductor quantum dots (QDs) in a cavity to create N00N states deterministically with $p=1$ and fidelity above 90% for $N\lesssim 60$, without the need of any projective measurement or local unitary operation. Using our measure we obtain maximum $N$-photon entanglement $E_N=1$ for arbitrary $N$. Our method paves the way to the miniaturization of N00N-state sources to the nanoscale regime, with the possibility to integrate them on a computer chip based on semiconductor materials.

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Entanglement dynamics of second quantized quantum fields

We study the entanglement dynamics in the system of coupled quantum fields. We prove that if the coupling is linear, that is if the total Hamiltonian is a quadratic form of field operators, entanglement can only be transferred between the fields. We show that entanglement is produced in the model of the two-mode self-interacting boson field with the characteristic Gaussian decay of coherence in the limit of high number of particles. The interesting feature of this system is that the particles in different modes become entangled even if there is no direct interaction between the modes. We apply these results for analysis of the entanglement dynamics in the two-mode Jaynes-Cummings model in the limit of large number of photons. While the photon-atom interaction is assumed to conserve helicity the photons with different polarizations still get entangled due to an effective interaction mediated by the atom with the characteristic entanglement time linearly increasing with the number of photons.

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Low Bias Negative Differential Resistance in Graphene Nanoribbon Superlattices

We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene Dirac Hamiltonian with the Landauer-Büttiker formalism to calculate the current I_SD through the system. We find three distinct transport regimes in which NDR occurs: (i) a "classical" regime for wide layers, through which the transport across band gaps is strongly suppressed, leading to alternating regions of nearly unity and zero transmission probabilities as a function of V_SD due to crossing of band gaps from different layers; (ii) a quantum regime dominated by superlattice miniband conduction, with current suppression arising from the misalignment of miniband states with increasing V_SD; and (iii) a Wannier-Stark ladder regime with current peaks occurring at the crossings of Wannier-Stark rungs from distinct ladders. We observe NDR at voltage biases as low as 10 mV with a high current density, making the aGNR superlattices attractive for device applications.

cond-mat.mes-hall↗

Correlated breakdown of carbon nanotubes in an ultra-high density aligned array

We demonstrate that in a densely packed aligned array of single walled carbon nanotubes, the breakdown of one nanotube leads to a highly correlated breakdown of neighboring nanotubes, thereby producing a nano-fissure. We show that the origin of the correlation is the electrostatic field of the broken nanotubes that produces locally inhomogeneous current and Joule heating distributions in the neighboring intact nanotubes triggering their breakdowns in the vicinity of the broken nanotubes. Our results suggest that the densely aligned array behaves like a correlated solid.

cond-mat.mes-hall↗

Single Photon Near Field Emission and Revival in Quantum Dots

Models of the spontaneous emission of photons coupled to the electronic states of quantum dots are important for understanding quantum interactions in dielectric media as applied to proposed solid-state quantum computers, single photon emitters, and single photon detectors. The characteristic lifetime of photon emission is traditionally modeled in the Weisskopf-Wigner approximation. Here we model the fully quantized spontaneous emission, including near field effects, of a photon from the excited state of a quantum dot beyond theWeisskopf-Wigner approximation. We propose the use of discretized central-difference approximations to describe single photon states via single photon operators in 3+1 dimensions. We further show herein that one can shift from the traditional description of electrodynamics and quantum electrodynamics, in terms of electric and magnetic fields to one in terms of a photonic wave function and its operators using the Dirac equation for the propagation of single photons.

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