arXiv subjects

Michel Pioro-Ladrière

Publications and source records attributed to Michel Pioro-Ladrière.

At least 19 recordsLinked to original sources

arXiv2026

Triple-Tone Microwave Control for Sensitivity Optimization in Compact Ensemble Nitrogen-Vacancy Magnetometers

Ensembles of nitrogen-vacancy (NV) centers in diamond are a well-established platform for quantum magnetometry under ambient conditions. One challenge arises from the hyperfine structure of the NV, which, for the common $^{14}$N isotope, results in a threefold reduction of contrast and thus sensitivity. By addressing each of the NV hyperfine transitions individually, triple-tone microwave (MW) control can mitigate this sensitivity loss. Here, we experimentally and theoretically investigate the regimes in which triple-tone excitation offers an advantage over standard single-tone MW control for two DC magnetometry protocols: pulsed optically detected magnetic resonance (ODMR) and Ramsey interferometry. We validate a master equation model of the NV dynamics against ensemble NV measurements, and use the model to explore triple-tone vs single-tone sensitivity for different MW powers and NV dephasing rates. For pulsed ODMR, triple-tone driving improves sensitivity by up to a factor of three in the low-dephasing regime, with diminishing gains when dephasing rates approach the hyperfine splitting. In contrast, for Ramsey interferometry, triple-tone excitation only improves sensitivity if MW power is limited. Our results delineate the operating regimes where triple-tone control provides a practical strategy for enhancing NV ensemble magnetometry in portable and power-limited sensors.

quant-ph↗

arXiv2025

Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance

Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance (EDSR) is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a new method of electric spin qubit control which generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance (EQSR). In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies.

cond-mat.mes-hall↗

arXiv2025

Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements

Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the identification of the desired charge states are long to acquire. Moreover, the voltage space to search for the desired charge state increases quickly with the number of qubits. Therefore, faster stability diagram acquisitions are needed to scale up a spin qubit quantum processor. Currently, most methods focus on more efficient data sampling. Our approach shows a significant speedup by combining measurement speedup and a reduction in the number of measurements needed to tune a quantum dot device. Using an autotuning algorithm based on a neural network and faster measurements by harnessing the FPGA embedded in Keysight's Quantum Engineering Toolkit (QET), the measurement time of stability diagrams has been reduced by a factor of 9.8. This led to an acceleration factor of 2.2 for the total initialization time of a SiGe quantum dot into the single-electron regime, which is limited by the Python code execution.

cond-mat.mes-hall↗

arXiv2024

The Design and Implementation of a Quantum Information Science Undergraduate Program

Quantum information science is a burgeoning research field attracting vast public and private investment in the last decade. This quick rise has led to a talent gap, where there are more open positions than new graduates who can fill these roles. To meet this critical need, higher education has been challenged to react accordingly by assuring a flow of highly skilled individuals who must be trained quickly. We thus present how Université de Sherbrooke, in Quebec, Canada, responded by creating and launching an innovative undergraduate degree in quantum information science, aiming to address this gap by training quantum software developers in three and a half years. At the end of this program, they will be ready to join the quantum workforce. We detail the creative process leading to a coherent curriculum, as well as why the local ecosystem led to these choices. The guiding principles and lessons learned during the development of this interdepartmental and interfaculty degree are shared to inspire other quantum education institutions.

physics.ed-ph↗

arXiv2024

Towards scalable cryogenic quantum dot biasing using memristor-based DC sources

Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is validated by performing several 250mV-DC sweeps with a resolution of 10mV at room temperature and at 1.2K. Additionally, the DC source prototype exhibits a limited output drift of $\approx1\mathrm{μVs^{-1}}$ at 1.2K. This showcases the potential of memristor-based DC sources for quantum dot biasing. Limitations in power consumption and voltage resolution using discrete components highlight the need for a fully integrated and scalable complementary metal-oxide-semiconductor-based (CMOS-based) approach. To address this, we propose to monolithically co-integrate emerging non-volatile memories (eNVMs) and 65nm CMOS circuitry. Simulations reveal a reduction in power consumption, down to $\mathrm{10μW}$ per DC source and in footprint. This allows for the integration of up to one million eNVM-based DC sources at the 4.2K stage of a dilution fridge, paving the way for near term large-scale quantum computing applications.

cs.ET↗

arXiv2023

Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO$_\textrm{2-x}$-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate a so-called cryogenic reforming (CR) technique performed at 4.2 K to overcome the well-known metal-insulator transition (MIT) which limits the analog behavior of memristors at low temperatures. This cryogenic reforming process was found to be reproducible and led to a durable suppression of the MIT. This process allowed to reduce by approximately 20% the voltages required to perform DC resistive switching at 4.2 K. Additionally, conduction mechanism studies of memristors before and after cryogenic reforming from 4.2 K to 300 K revealed different behaviors above 100 K, indicating a potential change in the conductive filament stoichiometry. The reformed devices exhibit a conductance level that is 50 times higher than ambient-formed memristor, and the conduction drop between 300 K and 4.2 K is 100 times smaller, indicating the effectiveness of the reforming process. More importantly, CR enables analog programming at 4.2 K with typical read voltages. Suppressing the MIT improved the analog switching dynamics of the memristor leading to approximately 250% larger on/off ratios during long-term depression (LTD)/long-term potentiation (LTP) resistance tuning. This enhancement opens up the possibility of using TiO$_{\textrm{2-x}}$-based memristors to be used as synapses in neuromorphic computing at cryogenic temperatures.

physics.app-ph↗

arXiv2022

Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control

Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryostat (i.e. in-situ). This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the quantum dots. In this study, we first demonstrate multilevel resistance programming of a TiO2-based memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based DC source. We then report hardwarebased simulations of the electrical performance of the proposed DC source. A cryogenic TiO2-based memristor model fitted on our experimental data at 4.2 K was used to show a 1 V voltage range and 100 uV in-situ memristor-based DC source. Finally, we simulate the biasing of double quantum dots enabling sub-2 minutes in-situ charge stability diagrams. This demonstration is a first step towards more advanced cryogenic applications for resistive memories such as cryogenic control electronics for quantum computers.

cs.AR↗

arXiv2021

Miniaturizing neural networks for charge state autotuning in quantum dots

A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided that an appropriate training set is available - and have been successfully used for autotuning in the past. In this paper, we develop extremely small feed-forward neural networks that can be used to detect charge-state transitions in quantum dot stability diagrams. We demonstrate that these neural networks can be trained on synthetic data produced by computer simulations, and robustly transferred to the task of tuning an experimental device into a desired charge state. The neural networks required for this task are sufficiently small as to enable an implementation in existing memristor crossbar arrays in the near future. This opens up the possibility of miniaturizing powerful control elements on low-power hardware, a significant step towards on-chip autotuning in future quantum dot computers.

cond-mat.mes-hall↗

arXiv2021

Optimized micromagnet geometries for Majorana zero modes in low g-factor materials

Solid-state experimental realizations of Majorana bound states are based on materials with strong intrinsic spin-orbit interactions. In this paper, we explore an alternative approach where spin-orbit coupling is induced artificially through a nonuniform magnetic field that originates from an array of micromagnets. Using a recently developed optimization algorithm, we find suitable magnet geometries for the emergence of topological superconductivity in wires without intrinsic spin-orbit coupling. We confirm the robustness of Majorana bound states against disorder and periodic potentials whose amplitudes do not exceed the Zeeman energy. Furthermore, we identify low g-factor materials commonly used in mesoscopic physics experiments as viable candidates for Majorana devices.

cond-mat.mes-hall↗

arXiv2020

Bell-state tomography in a silicon many-electron artificial molecule

An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quantum dot has a robust shell structure and, when operated at an occupancy of 5 or 13 electrons, has single spin-$\frac{1}{2}$ valence electron in its $p$- or $d$-orbital, respectively. These higher electron occupancies screen atomic-level disorder. The larger multielectron wavefunctions also enable significant overlap between neighbouring qubit electrons, while making space for an interstitial exchange-gate electrode. We implement a universal gate set using the magnetic field gradient of a micromagnet for electrically-driven single qubit gates, and a gate-voltage-controlled inter-dot barrier to perform two-qubit gates by pulsed exchange coupling. We use this gate set to demonstrate a Bell state preparation between multielectron qubits with fidelity 90.3%, confirmed by two-qubit state tomography using spin parity measurements.

cond-mat.mes-hall↗

arXiv2019

Algorithm for automated tuning of a quantum dot into the single-electron regime

We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is identified and reached. For each measurement, the signal processing module removes the physical background of the charge sensor to generate a binary image of charge transitions. Then, the image analysis module identifies the position and number of lines using two line detection schemes that are robust to noise and missing data.

quant-ph↗

arXiv2019

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.

cond-mat.mes-hall↗

arXiv2018

Probing a spin transfer controlled magnetic nanowire with a single nitrogen-vacancy spin in bulk diamond

The point-like nature and exquisite magnetic field sensitivity of the nitrogen vacancy (NV) center in diamond can provide information about the inner workings of magnetic nanocircuits in complement with traditional transport techniques. Here we use a single NV in bulk diamond to probe the stray field of a ferromagnetic nanowire controlled by spin transfer (ST) torques. We first report an unambiguous measurement of ST tuned, parametrically driven, large-amplitude magnetic oscillations. At the same time, we demonstrate that such magnetic oscillations alone can directly drive NV spin transitions, providing a potential new means of control. Finally, we use the NV as a local noise thermometer, observing strong ST damping of the stray field noise, consistent with magnetic cooling from room temperature to $\sim$150 K.

cond-mat.mes-hall↗

arXiv2018

All-electrical universal control of a double quantum dot qubit in silicon MOS

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

cond-mat.mes-hall↗

arXiv2018

High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.

cond-mat.mes-hall↗

arXiv2017

Coherent coupling between a quantum dot and a donor in silicon

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.

cond-mat.mes-hall↗

arXiv2016

Coupling a single electron spin to a microwave resonator: Controlling transverse and longitudinal couplings

Microwave-frequency superconducting resonators are ideally suited to perform dispersive qubit readout, to mediate two-qubit gates, and to shuttle states between distant quantum systems. A prerequisite for these applications is a strong qubit-resonator coupling. Strong coupling between an electron-spin qubit and a microwave resonator can be achieved by correlating spin- and orbital degrees of freedom. This correlation can be achieved through the Zeeman coupling of a single electron in a double quantum dot to a spatially inhomogeneous magnetic field generated by a nearby nanomagnet. In this paper, we consider such a device and estimate spin-resonator couplings of order ~ 1 MHz with realistic parameters. Further, through realistic simulations, we show that precise placement of the double dot relative to the nanomagnet allows to select between a purely longitudinal coupling (commuting with the bare spin Hamiltonian) and a purely transverse (spin non-conserving) coupling. Additionally, we suggest methods to mitigate dephasing and relaxation channels that are introduced in this coupling scheme. This analysis gives a clear route toward the realization of coherent state transfer between a microwave resonator and a single electron spin in a GaAs double quantum dot with a fidelity above 90%. Improved dynamical decoupling sequences, low-noise environments, and longer-lived microwave cavity modes may lead to substantially higher fidelities in the near future.

cond-mat.mes-hall↗

arXiv2015

Magnetometry of micro-magnets with electrostatically defined Hall bars

Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large current density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10^3. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.

cond-mat.mes-hall↗