arXiv subjects

Mihai Gabureac

Publications and source records attributed to Mihai Gabureac.

15 recordsLinked to original sources

arXiv2025

Nanocryotron-driven Charge Configuration Memristor

Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a novel non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We investigate the time-dynamics and current-voltage characteristics of such a device fabricated using a NbTiN nanowire and a 1T-TaS2 CCM. The observed dynamical response of the device is faithfully reproduced by modelling of the superconducting order parameter showing versatility of application. The inherent ultrahigh energy efficiency and speed of the device, which is compatible with single flux quantum logic, leads to a promising new memory concept for use in cryo-computing and quantum computing peripheral devices.

physics.comp-ph↗

arXiv2023

Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy

We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material.

cond-mat.mtrl-sci↗

arXiv2020

Microwave Quantum Link between Superconducting Circuits Housed in Spatially Separated Cryogenic Systems

Superconducting circuits are a strong contender for realizing quantum computing systems, and are also successfully used to study quantum optics and hybrid quantum systems. However, their cryogenic operation temperatures and the current lack of coherence-preserving microwave-to-optical conversion solutions have hindered the realization of superconducting quantum networks either spanning different cryogenics systems or larger distances. Here, we report the successful operation of a cryogenic waveguide coherently linking transmon qubits located in two dilution refrigerators separated by a physical distance of five meters. We transfer qubit states and generate entanglement on-demand with average transfer and target state fidelities of 85.8 % and 79.5 %, respectively, between the two nodes of this elementary network. Cryogenic microwave links do provide an opportunity to scale up systems for quantum computing and create local area quantum communication networks over length scales of at least tens of meters.

quant-ph↗

arXiv2020

Realizing a Deterministic Source of Multipartite-Entangled Photonic Qubits

Sources of entangled electromagnetic radiation are a cornerstone in quantum information processing and offer unique opportunities for the study of quantum many-body physics in a controlled experimental setting. While multi-mode entangled states of radiation have been generated in various platforms, all previous experiments are either probabilistic or restricted to generate specific types of states with a moderate entanglement length. Here, we demonstrate the fully deterministic generation of purely photonic entangled states such as the cluster, GHZ, and W state by sequentially emitting microwave photons from a controlled auxiliary system into a waveguide. We tomographically reconstruct the entire quantum many-body state for up to $N=4$ photonic modes and infer the quantum state for even larger $N$ from process tomography. We estimate that localizable entanglement persists over a distance of approximately ten photonic qubits, outperforming any previous deterministic scheme.

quant-ph↗

arXiv2020

Improving the Performance of Deep Quantum Optimization Algorithms with Continuous Gate Sets

Variational quantum algorithms are believed to be promising for solving computationally hard problems and are often comprised of repeated layers of quantum gates. An example thereof is the quantum approximate optimization algorithm (QAOA), an approach to solve combinatorial optimization problems on noisy intermediate-scale quantum (NISQ) systems. Gaining computational power from QAOA critically relies on the mitigation of errors during the execution of the algorithm, which for coherence-limited operations is achievable by reducing the gate count. Here, we demonstrate an improvement of up to a factor of 3 in algorithmic performance as measured by the success probability, by implementing a continuous hardware-efficient gate set using superconducting quantum circuits. This gate set allows us to perform the phase separation step in QAOA with a single physical gate for each pair of qubits instead of decomposing it into two C$Z$-gates and single-qubit gates. With this reduced number of physical gates, which scales with the number of layers employed in the algorithm, we experimentally investigate the circuit-depth-dependent performance of QAOA applied to exact-cover problem instances mapped onto three and seven qubits, using up to a total of 399 operations and up to 9 layers. Our results demonstrate that the use of continuous gate sets may be a key component in extending the impact of near-term quantum computers.

quant-ph↗

arXiv2019

Repeated Quantum Error Detection in a Surface Code

The realization of quantum error correction is an essential ingredient for reaching the full potential of fault-tolerant universal quantum computation. Using a range of different schemes, logical qubits can be redundantly encoded in a set of physical qubits. One such scalable approach is based on the surface code. Here we experimentally implement its smallest viable instance, capable of repeatedly detecting any single error using seven superconducting qubits, four data qubits and three ancilla qubits. Using high-fidelity ancilla-based stabilizer measurements we initialize the cardinal states of the encoded logical qubit with an average logical fidelity of 96.1%. We then repeatedly check for errors using the stabilizer readout and observe that the logical quantum state is preserved with a lifetime and coherence time longer than those of any of the constituent qubits when no errors are detected. Our demonstration of error detection with its resulting enhancement of the conditioned logical qubit coherence times in a 7-qubit surface code is an important step indicating a promising route towards the realization of quantum error correction in the surface code.

quant-ph↗

arXiv2019

Entanglement Stabilization using Parity Detection and Real-Time Feedback in Superconducting Circuits

Fault tolerant quantum computing relies on the ability to detect and correct errors, which in quantum error correction codes is typically achieved by projectively measuring multi-qubit parity operators and by conditioning operations on the observed error syndromes. Here, we experimentally demonstrate the use of an ancillary qubit to repeatedly measure the $ZZ$ and $XX$ parity operators of two data qubits and to thereby project their joint state into the respective parity subspaces. By applying feedback operations conditioned on the outcomes of individual parity measurements, we demonstrate the real-time stabilization of a Bell state with a fidelity of $F\approx 74\%$ in up to 12 cycles of the feedback loop. We also perform the protocol using Pauli frame updating and, in contrast to the case of real-time stabilization, observe a steady decrease in fidelity from cycle to cycle. The ability to stabilize parity over multiple feedback rounds with no reduction in fidelity provides strong evidence for the feasibility of executing stabilizer codes on timescales much longer than the intrinsic coherence times of the constituent qubits.

quant-ph↗

arXiv2017

Magneto-Optical Detection of the Spin Hall Effect in Pt and W Thin Films

Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales linearly with current density. By comparing the experimental results with ab-initio calculations of the spin Hall and magneto-optical Kerr effects, we quantitatively determine the current-induced spin accumulation at the Pt interface as $5*10^{-12} μ_B$A$^{-1}$cm$^2$ per atom. From thickness-dependent measurements, we determine the spin diffusion length in a single Pt film to be $11 \pm 3$ nm, which is significantly larger compared to that of Pt adjacent to a magnetic layer.

cond-mat.mtrl-sci↗

arXiv2017

Time- and spatially-resolved magnetization dynamics driven by spin-orbit torques

Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So far, however, the timescale and evolution of the magnetization during the switching process have remained undetected. Here, we report the direct observation of SOT-driven magnetization dynamics in Pt/Co/AlO$_x$ dots during current pulse injection. Time-resolved x-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a sub-ns current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current, and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of both damping-like and field-like SOT and show that reproducible switching events can be obtained for over $10^{12}$ reversal cycles.

cond-mat.mtrl-sci↗

arXiv2017

Interface enhanced spin-orbit torques and current-induced magnetization switching of Pd/Co/AlO$_x$ layers

Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of the current-induced spin orbit torques and magnetization switching in perpendicularly magnetized Pd/Co/AlO$_x$ layers as a function of Pd thickness. We find sizeable damping-like (DL) and field-like (FL) torques, of the order of 1~mT per $10^7$~A/cm$^2$, which have different thickness and magnetization angle dependence. The analysis of the DL torque efficiency per unit current density and electric field using drift-diffusion theory leads to an effective spin Hall angle and spin diffusion length of Pd larger than 0.03 and 7~nm, respectively. The FL SOT includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and is further strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd/Co/AlO$_x$ layers with similar current density as used for Pt/Co layers with comparable perpendicular magnetic anisotropy.

cond-mat.mtrl-sci↗

arXiv2015

Magnetoresistance of heavy and light metal/ferromagnet bilayers

We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR) of YIG/Pt, but has a much larger anisotropy, of the order of 0.5%, which increases with the atomic number of the NM. This SMR-like behavior is absent in light NM/Co bilayers (NM = Ti, Cu), which present the standard AMR expected of polycrystalline FM layers. In the Ta, W, Pt/Co bilayers we find an additional magnetoresistance, directly proportional to the current and to the transverse component of the magnetization. This so-called unidirectional SMR, of the order of 0.005%, is largest in W and correlates with the amplitude of the antidamping spin-orbit torque. The unidirectional SMR is below the accuracy of our measurements in YIG/Pt.

cond-mat.mes-hall↗

arXiv2015

Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers

Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin-dependent scattering couple the current-induced spin accumulation to the electrical conductivity. We show that the longitudinal resistance of Ta|Co and Pt|Co bilayers changes when reversing the polarity of the current or the sign of the magnetization. This unidirectional magnetoresistance scales linearly with current density and has opposite sign in Ta and Pt, which we associate with the modification of the interface scattering potential induced by the spin Hall effect in these materials. Our results suggest a route to control the resistance and detect magnetization switching in spintronic devices using a two-terminal geometry, which applies also to heterostructures including topological insulators.

cond-mat.mes-hall↗

arXiv2014

Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers

We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a vertical thermal gradient whose sign and magnitude are determined by the resistivity difference and stacking order of the magnetic and nonmagnetic layers. We then study ferromagnet/heavy metal bilayers with strong spin-orbit coupling, showing that second harmonic thermoelectric contributions to the transverse voltage may lead to a significant overestimation of the antidamping SOT. We find that thermoelectric effects are very strong in Ta(6nm)/Co(2.5nm) and negligible in Pt(6nm)/Co(2.5nm) bilayers. After including these effects in the analysis of the transverse voltage, we find that the antidamping SOTs in these bilayers, after normalization to the magnetization volume, are comparable to those found in thinner Co layers with perpendicular magnetization, whereas the field-like SOTs are about an order of magnitude smaller.

cond-mat.mes-hall↗

arXiv2010

Variation of the metallic content of Focused Electron Beam Induced Deposition of Cobalt

Cobalt-containing deposits from Cobalt carbonyl are experimentally produced and their composition is measured. The Cobalt concentration is found to be readily tunable between 20 and 70 at.% by variation of the dwell time. The variations in metallic concentration are explained by co-deposition of hydrocarbons present in the chamber background pressure.

cond-mat.mtrl-sci↗

arXiv2009

Nano-Hall sensors with granular Co-C

We analyzed the performance of Hall sensors with different Co-C ratios, deposited directly in nano-structured form, using $Co_2(CO)_8$ gas molecules, by focused electron or ion beam induced deposition. Due to the enhanced inter-grain scattering in these granular wires, the Extraordinary Hall Effect can be increased by two orders of magnitude with respect to pure Co, up to a current sensitivity of $1 Ω/T$. We show that the best magnetic field resolution at room temperature is obtained for Co ratios between 60% and 70% and is better than $1 μT/Hz^{1/2}$. For an active area of the sensor of $200 \times 200 nm^2$, the room temperature magnetic flux resolution is $ϕ_{min} = 2\times10^{-5}ϕ_0$, in the thermal noise frequency range, i.e. above 100 kHz.

cond-mat.mtrl-sci↗