arXiv subjects

Mikhail M. Glazov

Publications and source records attributed to Mikhail M. Glazov.

36 records · Page 2Linked to original sources

arXiv2021

Interlayer exciton mediated second harmonic generation in bilayer MoS2

Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations.

cond-mat.mtrl-sci↗

arXiv2021

Accurate Determination of Semiconductor Diffusion Coefficient Using Optical Microscopy

Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices. D is often determined by fitting a time-resolved expanding carrier profile after optical excitation using a Mean Squared Displacement (MSD) Model. Although this approach has gained widespread adoption, its utilization can significantly overestimate D due to the non-linear recombination processes that artificially broaden the carrier distribution profile. Here, we simulate diffusive processes in both excitonic and free carrier semiconductors and present revised MSD Models that take into account second-order (i.e. bimolecular) and third-order (i.e. Auger) processes to accurately recover D for various types of materials. For perovskite thin films, utilization of these models can reduce fitting error by orders of magnitude, especially for commonly deployed excitation conditions where carrier densities are > 5x10$^1$$^6$ cm$^-$$^3$. In addition, we show that commonly-deployed MSD Models are not well-suited for the study of films with microstructure, especially when boundary behavior is unknown and feature sizes are comparable to the diffusion length. Finally, we find that photon recycling only impacts energy carrier profiles on ultrashort time scales or for materials with fast radiative decay times. We present clear strategies to investigate energy transport in disordered materials for more effective design and optimization of electronic and optoelectronic devices.

physics.app-ph↗

arXiv2020

Optical spin control and coherence properties of acceptor bound holes in strained GaAs

Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pumping and coherent population trapping for acceptor-bound holes in a strained GaAs epitaxial layer. We find $μ$s-scale longitudinal spin relaxation time T$_1$ and an inhomogeneous dephasing time T$_2^*$ of $\sim$7~ns. We attribute the spin relaxation mechanism to a combination effect of a hole-phonon interaction through the deformation potentials and a heavy-hole light-hole mixing in an in-plane magnetic field. We attribute the short T$_2^*$ to g-factor broadening due to strain inhomogeneity. T$_1$ and T$_2^*$ are quantitatively calculated based on these mechanisms and compared with the experimental results. While the hyperfine-mediated decoherence is mitigated, our results highlight the important contribution of strain to relaxation and dephasing of acceptor-bound hole spins.

quant-ph↗

arXiv2020

Kinetic approach to the nuclear-spin polaron formation

Under optical cooling of nuclei, a strongly correlated nuclear-spin polaron state can form in semiconductor nanostructures with localized charge carriers due to the strong hyperfine interaction of the localized electron spin with the surrounding nuclear spins. Here we develop a kinetic-equation formalism describing the nuclear-spin polaron formation. We present a derivation of the kinetic equations for an electron-nuclear spin system coupled to reservoirs of different electron and nuclear spin temperatures which generate the exact thermodynamic steady state for equal temperatures independent of the system size. We illustrate our approach using the analytical solution of the central spin model in the limit of an Ising form of the hyperfine coupling. For homogeneous hyperfine coupling constants, i.e., the box model, the model is reduced to an analytically solvable form. Based on the analysis of the nuclear-spin distribution function and the electron-nuclear spin correlators, we derive a relation between the electron and nuclear spin temperatures, where the correlated nuclear-spin polaron state is formed. In the limit of large nuclear baths, this temperature line coincides with the critical temperature of the mean-field theory for polaron formation. The criteria of the polaron formation in a finite-size system are discussed. We demonstrate that the system's behavior at the transition temperature does not depend on details of the hyperfine-coupling distribution function but only on the effective number of coupled bath spins. In addition, the kinetic equations enable the analysis of the temporal formation of the nuclear-polaron state, where we find the build-up process predominated by the nuclear spin-flip dynamics.

cond-mat.mes-hall↗

arXiv2020

Autoionization and dressing of excited excitons by free carriers in monolayer WSe2

We experimentally demonstrate dressing of the excited exciton states by a continuously tunable Fermi sea of free charge carriers in a monolayer semiconductor. It represents an unusual scenario of two-particle excitations of charged excitons previously inaccessible in conventional material systems. We identify excited state trions, accurately determine their binding energies in the zero-density limit for both electron- and hole-doped regimes, and observe emerging many-body phenomena at elevated doping. Combining experiment and theory we gain access to the intra-exciton coupling facilitated by the interaction with free charge carriers. We provide evidence for a process of autoionization for quasiparticles, a unique scattering pathway available for excited states in atomic systems. Finally, we demonstrate a complete transfer of the optical transition strength from the excited excitons to dressed excitons, Fermi polarons, as well as the associated light emission from their non-equilibrium populations.

cond-mat.mes-hall↗

arXiv2020

Efficient phonon cascades in hot photoluminescence of WSe$_2$ monolayers

Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs) in optoelectronics. We measure light scattering and emission in 1L-WSe$_2$ close to the laser excitation energy (down to~$\sim$0.6meV). We detect a series of periodic maxima in the hot photoluminescence intensity, stemming from energy states higher than the A-exciton state, in addition to sharp, non-periodic Raman lines related to the phonon modes. We find a period $\sim$15meV for peaks both below (Stokes) and above (anti-Stokes) the laser excitation energy. We detect 7 maxima from 78K to room temperature in the Stokes signal and 5 in the anti-Stokes, of increasing intensity with temperature. We assign these to phonon cascades, whereby carriers undergo phonon-induced transitions between real states in the free-carrier gap with a probability of radiative recombination at each step. We infer that intermediate states in the conduction band at the $Λ$-valley of the Brillouin zone participate in the cascade process of 1L-WSe$_2$. The observations explain the primary stages of carrier relaxation, not accessible so far in time-resolved experiments. This is important for optoelectronic applications, such as photodetectors and lasers, because these determine the recovery rate and, as a consequence, the devices' speed and efficiency.

cond-mat.mes-hall↗

arXiv2020

Exciton diffusion in monolayer semiconductors with suppressed disorder

Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly suppress environmental disorder. Diffusion of excitons is then directly monitored using time- and spatially-resolved emission microscopy at ambient conditions. We consistently find very efficient propagation with linear diffusion coefficients up to 10\,cm$^2$/s, corresponding to room temperature effective mobilities as high as 400\,cm$^2$/Vs as well as a correlation between rapid diffusion and short population lifetime. At elevated densities we detect distinct signatures of many-particle interactions and consequences of strongly suppressed Auger-like exciton-exciton annihilation. A combination of analytical and numerical theoretical approaches is employed to provide pathways towards comprehensive understanding of the observed linear and non-linear propagation phenomena. We emphasize the role of dark exciton states and present a mechanism for diffusion facilitated by free electron hole plasma from entropy-ionized excitons.

cond-mat.mes-hall↗

arXiv2019

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

cond-mat.mes-hall↗

arXiv2019

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor

Spin-orbit coupling is a fundamental mechanism that connects the spin of a charge carrier with its momentum. Likewise, in the optical domain, a synthetic spin-orbit coupling is accessible, for instance, by engineering optical anisotropies in photonic materials. Both, akin, yield the possibility to create devices directly harnessing spin- and polarization as information carriers. Atomically thin layers of transition metal dichalcogenides provide a new material platform which promises intrinsic spin-valley Hall features both for free carriers, two-particle excitations (excitons), as well as for photons. In such materials, the spin of an exciton is closely linked to the high-symmetry point in reciprocal space it emerges from. Here, we demonstrate, that spin, and hence valley selective propagation is accessible in an atomically thin layer of MoSe2, which is strongly coupled to a microcavity photon mode. We engineer a wire-like device, where we can clearly trace the flow, and the helicity of exciton-polaritons expanding along a channel. By exciting a coherent superposition of K and K- tagged polaritons, we observe valley selective expansion of the polariton cloud without neither any applied external magnetic fields nor coherent Rayleigh scattering. Unlike the valley Hall effect for TMDC excitons, the observed optical valley Hall effect (OVHE) strikingly occurs on a macroscopic scale, and clearly reveals the potential for applications in spin-valley locked photonic devices.

cond-mat.mes-hall↗

arXiv2018

Coherent spin dynamics of electrons and holes in CsPbBr$_3$ perovskite crystals

The lead halide perovskites demonstrate huge potential for optoelectronic applications, high energy radiation detectors, light emitting devices and solar energy harvesting. Those materials exhibit strong spin-orbit coupling enabling efficient optical orientation of carrier spins in perovskite-based devices with performance controlled by a magnetic field. Perovskites are promising for spintronics due to substantial bulk and structure inversion asymmetry, however, their spin properties are not studied in detail. Here we show that elaborated time-resolved spectroscopy involving strong magnetic fields can be successfully used for perovskites. We perform a comprehensive study of high-quality CsPbBr$_3$ crystals by measuring the exciton and charge carrier $g$-factors, spin relaxation times and hyperfine interaction of carrier and nuclear spins by means of coherent spin dynamics. Owing to their "inverted" band structure, perovskites represent appealing model systems for semiconductor spintronics exploiting the valence band hole spins, while in conventional semiconductors the conduction band electrons are considered for spin functionality.

cond-mat.mtrl-sci↗

arXiv2018

Breakdown of the static approximation for free carrier screening of excitons in monolayer semiconductors

We address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. We show that the low-frequency models lead to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.

cond-mat.mes-hall↗

arXiv2018

Electron Spin Noise under the Conditions of Nuclei Induced Frequency Focusing

We study theoretically the electron spin noise in quantum dots under non-equilibrium conditions caused by the pumping by a train of circularly polarized optical pulses. In such a situation, the nuclear spins are known to adjust in such a way, that the electron spin precession frequencies become multiples of the pump pulse repetition frequency. This so called phase synchronization effect was uncovered in [Science {\bf 317}, 1896 (2007)] and termed nuclei-induced frequency focusing of electron spin coherence. Using the classical approach to the central spin model we evaluate the nuclear spin distribution function and the electron spin noise spectrum. We show that the electron spin noise spectrum consists of sharp peaks corresponding to the phase synchronization conditions and directly reveal the distribution of the nuclear spins. We discuss the effects of nuclear spin relaxation after the pumping is over and analyze the corresponding evolution of nuclear spin distributions and electron spin noise spectra.

cond-mat.mes-hall↗

arXiv2018

Exciton diffusion and halo effects in monolayer semiconductors

We directly monitor exciton propagation in freestanding and SiO2-supported WS2 monolayers through spatially- and time-resolved micro-photoluminescence under ambient conditions. We find highly nonlinear behavior with characteristic, qualitative changes in the spatial profiles of the exciton emission and an effective diffusion coefficient increasing from 0.3 to more than 30 cm2/s, depending on the injected exciton density. Solving the diffusion equation while accounting for Auger recombination allows us to identify and quantitatively understand the main origin of the increase in the observed diffusion coefficient. At elevated excitation densities, the initial Gaussian distribution of the excitons evolves into long-lived halo shapes with micrometer-scale diameter, indicating additional memory effects in the exciton dynamics.

cond-mat.mes-hall↗

arXiv2018

Two-dimensional semiconductors in the regime of strong light-matter coupling

The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron-hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced optical transitions, which can be brought into resonance with electromagnetic fields in microcavities and plasmonic nanostructures. Due to the atomic thinness and robustness of the monolayers, their integration in van der Waals heterostructures provides unique opportunities for engineering strong light-matter coupling. We review first results in this emerging field and outline future opportunities and challenges.

cond-mat.mes-hall↗

arXiv2018

Zeeman Splitting and Inverted Polarization of Biexciton Emission in Monolayer WS2

We investigate the magnetic-field-induced splitting of biexcitons in monolayer WS$_2$ using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed $g$ factor of the biexciton amounts to $-3.89$, closely matching the $g$ factor of the neutral exciton. The biexciton emission shows an inverted circular field-induced polarization upon linearly polarized excitation, i.e. it exhibits preferential emission from the high-energy peak in a magnetic field. This phenomenon is explained by taking into account the configuration of the biexciton constituents in momentum space and their respective energetic behavior in magnetic fields. Our findings reveal the critical role of dark excitons in the composition of this many-body state.

cond-mat.mes-hall↗

arXiv2017

Excitons in atomically thin transition metal dichalcogenides

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here we review recent progress in our understanding of the excitonic properties in monolayer TMDs and lay out future challenges. We focus on the consequences of the strong direct and exchange Coulomb interaction, discuss exciton-light interaction and effects of other carriers and excitons on electron-hole pairs in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.

cond-mat.mtrl-sci↗

arXiv2017

Identifying optical signatures of momentum-dark excitons in transition metal dichalcogenide monolayers

Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin configurations of such momentum-direct excitons as well as their charged counterparts provide a powerful platform for spin-valley and microcavity physics in two-dimensional materials. The corresponding spectral signatures, however, are insufficient to explain the main characteristic peaks observed in the photoluminescence spectra of ML TMDs on the basis of momentum-\textit{direct} excitons alone. Here, we show that the notion of momentum-\textit{indirect} excitons is important for the understanding of the versatile photoluminescence features. Taking into account phonon-assisted radiative recombination pathways for electrons and holes from dissimilar valleys, we interpret unidentified peaks in the emission spectra as acoustic and optical phonon sidebands of momentum-dark excitons. Our approach will facilitate the interpretation of optical, valley and spin phenomena in TMDs arising from bright and dark exciton manifolds.

cond-mat.mes-hall↗

arXiv2014

Spin noise in a quantum dot ensemble: from a quantum mechanical to a semi-classical description

Spin noise spectroscopy is a promising technique for revealing the microscopic nature of spin dephasing processes in quantum dots. We compare the spin-noise in an ensemble of singly charged quantum dots calculated by two complementary approaches. The Chebyshev polynomial expansion technique (CET) accounts for the full quantum mechanical fluctuation of the nuclear spin bath and a semi-classical approach (SCA) is based on the averaging the electron spin dynamics over all different static Overhauser field configurations. We observe a remarkable agreement between both methods in the high-frequency part of the spectra, while the low-frequency part is determined by the long time fluctuations of the Overhauser field. We find small differences in the spectra depending on the distribution of hyperfine couplings. The spin-noise spectra in strong enough magnetic fields where the nuclear dynamics is quenched calculated by two complimentary approaches are in perfect agreement.

cond-mat.mes-hall↗