arXiv subjects

Miljenko Suljic

Publications and source records attributed to Miljenko Suljic.

4 recordsLinked to original sources

arXiv2026

Development and demonstration of the Korea ALICE Telescope using electron beams at KEK PF-AR

The development of ultra-low-mass, high-precision vertex detectors is a key requirement for future collider experiments and motivates extensive research and development of novel silicon tracking technologies. In this work, we present the development and beam-test demonstration of the Korea ALICE Telescope (KATS), a silicon-tracking telescope designed to support R&D on next-generation cylindrical vertex detectors, such as the proposed ALICE ITS3 upgrade. The telescope consists of six ALPIDE Monolithic Active Pixel Sensors (MAPS) used as reference tracking planes, a bent ALPIDE sensor serving as the device under test, and a scintillating-fiber-based trigger system, all housed in a light-tight modular enclosure. This setup enables precise track reconstruction and detailed performance studies of both planar and curved silicon sensors. Beam tests were carried out using high-energy electron beams at the KEK Photon Factory Advanced Ring (PF-AR). The telescope system operated stably under realistic beam conditions, and its tracking performance was successfully validated. The bent ALPIDE sensor was operated at a bending radius of approximately 18 mm, consistent with ITS3's design goals, without any observable degradation in detection performance. The measured results confirm that the KATS provides a versatile and reliable platform for studies of curved MAPS technologies, alignment precision, and tracking performance. These results provide important experimental validation of key technologies for future low-mass cylindrical silicon vertex detectors and establish KATS as a valuable facility for ongoing and future detector R&D.

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arXiv2025

Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE ITS3 R&D program in synergy with the CERN R&D, we evaluated the performance of the Analog Pixel Test Structures (APTS) fabricated in the TPSCo 65 nm CMOS imaging process. The prototypes employ 10 um pitch pixels with a fast operational amplifier-based buffering stage at the output, enabling direct characterization of intrinsic sensor response. Beam tests with minimum ionizing particles assessed the timing and charge collection of DC- and AC-coupled designs, including devices exposed to 10^14 NIEL and 10^15 NIEL non ioninsing energy loss. DC-coupled sensors demonstrated stable performance, maintaining time resolution lower than 70 ps and >99% detection efficiency up to 10^15 NIEL. AC-coupled sensors demonstrated a wide operational margin, with efficiencies above 99% for clusterization thresholds below 150 electrons. Even though the AC coupling allows higher reverse bias than DC-coupled sensors, the reduced signal amplitude lowers the signal-to-noise ratio, increasing the jitter contribution. At high reverse bias, the AC-coupled sensors achieve time resolutions comparable to the DC-coupled version, demonstrating the viability of both approaches. These results also suggest that combining the low capacitance of DC-coupled designs with the high-bias capability of AC coupling could further enhance time resolution. These results confirm the suitability of 65 nm MAPS for future collider detectors requiring high radiation tolerance, efficiency, and timing precision.

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arXiv2024

Characterisation of analogue MAPS produced in the 65 nm TPSCo process

Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations including collection layer process (standard, blanket, modified with gap), pixel pitch (15, 18, \SI{22.5}{\micro\meter}), and pixel geometry (square vs hexagonal/staggered). In this work the characterisation of the CE-65v2 chip, based on $^{55}$Fe lab measurements and test beams at CERN SPS, is presented. Matrix gain uniformity up to the $\mathcal{O}$(5\%) level was demonstrated for all considered chip configurations. The CE-65v2 chip achieves a spatial resolution of under \SI{2}{\micro\meter} during beam tests. Process modifications allowing for faster charge collection and less charge sharing result in decreased spatial resolution, but a considerably wider range of operation, with both the \SI{15}{\micro\meter} and \SI{22.5}{\micro\meter} chips achieving over 99\% efficiency up to a $\sim$180 e$^{-}$ seed threshold. The results serve to validate the 65 nm TPSCo CMOS process, as well as to motivate design choices in future particle detection experiments.

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arXiv2024

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a (120 GeV/$c$) positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 $\mu$m, highlighting the potential of TPSCo 65nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.

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