arXiv subjects

Mina Yoon

Publications and source records attributed to Mina Yoon.

43 records · Page 3Linked to original sources

arXiv2017

Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic properties are highly dependent on the number of layers. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate the tunability of the quasiparticle energy gap of few layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy (MBE). Our results show that the band gap is about 3.50 +/-0.05 eV for single-tetralayer (1TL), 3.00 +/-0.05 eV for bi-tetralayer (2TL) and 2.30 +/-0.05 eV for tri-tetralayer (3TL). This band gap evolution of GaSe, in particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced doping.

cond-mat.mtrl-sci↗

arXiv2015

Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering

Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated substrate states at the same energy range, hindering their practical applications. Here, by density functional theory calculation, we show that Au one monolayer film deposition on a layered semiconductor surface beta-InSe(0001) can possess "ideal" Rashba states with large spin splitting, which are completely situated inside the large band gap of the substrate. The position of the Rashba bands can be tuned over a wide range with respect to the substrate band edges by experimentally accessible strain. Furthermore, our nonequilibrium Green's function transport calculation shows that this system may give rise to the long-sought strong current modulation when made into a device of Datta-Das transistor. Similar systems may be identified with other metal ultrathin films and layered semiconductor substrates to realize ideal Rashba states.

cond-mat.mtrl-sci↗

arXiv2015

Selective control of oxygen sublattice stability by epitaxial strain in Ruddlesden-Popper films

Oxygen-defect control has long been considered an influential tuning knob for producing various property responses in complex oxide films. In addition to physical property changes, modification to the lattice structure, specifically lattice expansion, with increasing oxygen vacancy concentrations has been reported often and has become the convention for oxide materials. However, the current understanding of the lattice behavior in oxygen-deficient films becomes disputable when considering compounds containing different bonding environments or atomic layering. Moreover, tensile strain has recently been discovered to stabilize oxygen vacancies in epitaxial films, which further complicates the interpretation of lattice behavior resulting from their appearance. Here, we report on the selective strain control of oxygen vacancy formation and resulting lattice responses in the layered, Ruddlesden-Popper phases, La1.85Sr0.15CuO4. We found that a drastically reduced Gibbs free energy for oxygen vacancy formation near the typical growth temperature for tensile-strained epitaxial LSCO accounts for the large oxygen non-stoichiometry. Additionally, oxygen vacancies form preferentially in the equatorial position of the CuO2 plane, leading to a lattice contraction, rather than the expected expansion, observed with apical oxygen vacancies. Since oxygen stoichiometry plays a key role in determining the physical properties of many complex oxides, the strong strain coupling of oxygen nonstoichiometry and the unusual structural response reported here can provide new perspectives and understanding to the structure and property relationships of many other functional oxide materials.

cond-mat.mtrl-sci↗

arXiv2015

Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external electric field

Bilayer graphene (BLG) with a tunable bandgap appears interesting as an alternative to graphene for practical applications, thus its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLGs in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLGs for a given field. We further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce overall transport gap.

cond-mat.mtrl-sci↗

arXiv2012

Benchmarking van der Waals Density Functionals with Experimental Data: Potential Energy Curves for H2 Molecules on Cu(111), (100), and (110) Surfaces

Detailed physisorption data from experiment for the H_2 molecule on low-index Cu surfaces challenge theory. Recently, density-functional theory (DFT) has been developed to account for nonlocal correlation effects, including van der Waals (dispersion) forces. We show that the functional vdW-DF2 gives a potential-energy curve, potential-well energy levels, and difference in lateral corrugation promisingly close to the results obtained by resonant elastic backscattering-diffraction experiments. The backscattering barrier is found selective for choice of exchange-functional approximation. Further, the DFT-D3 and TS-vdW corrections to traditional DFT formulations are also benchmarked, and deviations are analyzed.

cond-mat.mtrl-sci↗

arXiv2000

Boundary Effects on Dynamic Behavior of Josephson-Junction Arrays

The boundary effects on the current-voltage characteristics in two-dimensional arrays of resistively shunted Josephson junctions are examined. In particular, we consider both the conventional boundary conditions (CBC) and the fluctuating twist boundary conditions (FTBC), and make comparison of the obtained results. It is observed that the CBC, which have been widely adopted in existing simulations, may give a problem in scaling, arising from rather large boundary effects; the FTBC in general turn out to be effective in reducing the finite-size effects, yielding results with good scaling behavior. To resolve the discrepancy between the two boundary conditions, we propose that the proper scaling in the CBC should be performed with the boundary data discarded: This is shown to give results which indeed scale well and are the same as those from the FTBC.

cond-mat.supr-con↗

arXiv1999

Lattice effects on the current-voltage characteristics of superconducting arrays

The lattice effects on the current-voltage characteristics of two-dimensional arrays of resistively shunted Josephson junctions are investigated. The lattice potential energies due to the discrete lattice structure are calculated for several geometries and directions of current injection. We compare the energy barrier for vortex-pair unbinding with the lattice pinning potential, which shows that lattice effects are negligible in the low-current limit as well as in the high-current limit. At intermediate currents, on the other hand, the lattice potential becomes comparable to the barrier height and the lattice effects may be observed in the current-voltage characteristics.

cond-mat.supr-con↗