arXiv subjects

Mingda Li

Publications and source records attributed to Mingda Li.

124 records · Page 7Linked to original sources

arXiv2016

Oscillatory deviations from Matthiessen's rule due to interacting dislocations

We theoretically examine the validity of Matthiessen's rule caused by strong dislocation-dislocation interaction using a fully quantized dislocation field, where its degree of deviation is quantified at arbitrary electron energy, dislocation-electron and dislocation-dislocation distances and interaction strengths. Contrary to intuition, we show that the electron relaxation rate deviates from the Matthiessen's rule in an oscillatory way as a function of inter-dislocation distance, instead of monotonically. This study could serve as a computational tool to investigate the electronic behavior of a highly-dislocated system at a full quantum field theoretical level.

cond-mat.mtrl-sci↗

arXiv2016

Topological Semimetal-Insulator Quantum Phase Transition in Zintl Compounds Ba2X (X=Si, Ge)

By first-principles calculations, we find that Ba2X(X=Si, Ge) hosts a topological semimetal phase with one nodal ring in the kx=0 plane, which is protected by the glide mirror symmetry when spin-orbit coupling (SOC) is ignored. The corresponding drumheadlike surface flat band appears on the (100) surface in surface Green function calculation. Furthermore, a topological-semimetal-to-insulator transition (TSMIT) is found. The nodal line semimetal would evolve into topological insulator as SOC is turned on. The topologically protected metallic surface states emerge around the Gamma=0 point, which could be tuned into topologically-trivial insulator state by more than 3% hydrostatic strain. These results reveal a new category of materials showing quantum phase transition between topological semimetal and insulator, and tunability through elastic strain engineering.

cond-mat.mes-hall↗

arXiv2016

Three-dimensional non-Bosonic non-Fermionic quasiparticle through a quantized topological defect of crystal dislocation

It is a fundamental postulate that quasiparticles in 3D space obey either Bosonic or Fermionic statistics, satisfying either canonical commutation or anti-commutation relation. However, under certain constraints, such as the 2D dimensional constraint, canonical quantization algebra is allowed to break down, and quasiparticles can obey other statistics, such as anyonic statistics. In this study, we show that dislons- the quasiparticles in 3D due to quantized displacement field of a dislocation- can also obey neither Bosonic nor Fermionic statistics due to the topological constraint of the dislocation. With this theory, an effective electron field theory based on the electron-dislon interaction is obtained, which consists of two types of interactions. One classical-type of interaction is reducible to the well-known deformation potential scattering, and the other quantum-type of interaction indicates an effective attraction between electrons. The role of dislocations in superconductivity is clarified as the competition between the classical and quantum interactions, showing excellent agreement with experiments.

cond-mat.mes-hall↗

arXiv2016

Canonical Quantization of Crystal Dislocation and Electron-Dislocation Scattering in an Isotropic Medium

Crystal dislocations govern the plastic mechanical properties of materials but also affect the electrical and optical properties. However, a fundamental and quantitative quantum-mechanical theory of dislocation remains undiscovered for decades. Here we present an exactly solvable quantum field theory of dislocation, for both edge and screw dislocations in an isotropic medium by introducing a new quasiparticle "dislon". With this approach, the electron-dislocation relaxation time is studied from electron self-energy which can be reduced to classical results. Moreover, a fundamentally new type of electron energy Friedel oscillation near dislocation core is predicted, which can occur even with single electron at present. For the first time, the effect of dislocations on materials' non-mechanical properties can be studied at a full quantum field theoretical level.

cond-mat.mtrl-sci↗

arXiv2016

The Non-Perturbative Quantum Nature of the Dislocation-Phonon Interaction

Despite the long history of dislocation-phonon interaction studies, there are many problems that have not been fully resolved during this development. These include an incompatibility between a perturbative approach and the long-range nature of a dislocation, the relation between static and dynamic scattering, and the nature of dislocation-phonon resonance. Here by introducing a fully quantized dislocation field, the "dislon"[1], a phonon is renormalized as a quasi-phonon, with shifted quasi-phonon energy, and accompanied by a finite quasi-phonon lifetime that is reducible to classical results. A series of outstanding legacy issues including those above can be directly explained within this unified phonon renormalization approach. In particular, a renormalized phonon naturally resolves the decades-long debate between dynamic and static dislocation-phonon scattering approaches.

cond-mat.mtrl-sci↗

arXiv2016

Phonon Localization in Heat Conduction

Departures in phonon heat conduction from diffusion have been extensively observed in nanostructures through their thermal conductivity reduction and largely explained with classical size effects neglecting phonon's wave nature. Here, we report localization-behavior in phonon heat conduction due to multiple scattering and interference of phonon waves, observed through measurements of the thermal conductivities of GaAs/AlAs superlattices with ErAs nanodots randomly distributed at the interfaces. Near room temperature, the measured thermal conductivities increased with increasing number of SL periods and eventually saturated, indicating a transition from ballistic-to-diffusive transport. At low temperatures, the thermal conductivities of the samples with ErAs dots first increased and then decreased with an increasing number of periods, signaling phonon wave localization. This Anderson localization behavior is also validated via atomistic Green's function simulations. The observation of phonon localization in heat conduction is surprising due to the broadband nature of thermal transport. This discovery suggests a new path forward for engineering phonon thermal transport.

cond-mat.mes-hall↗

arXiv2015

Quantum Anomalous Hall Effect in Time-Reversal-Symmetry Breaking Topological Insulators

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity e2/h without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this Topical Review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

cond-mat.mes-hall↗

arXiv2015

Low-Dimensional Conduction Mechanisms in Highly Conductive and Transparent Conjugated Polymers

Electronic conduction in conjugated polymers is of emerging technological interest for high-performance optoelectronic and thermoelectric devices. A completely new aspect and understanding of the conduction mechanism on conducting polymers is introduced, allowing the applicability of materials to be optimized. The charge-transport mechanism is explained by direct experimental evidence with a very well supported theoretical model.

cond-mat.mtrl-sci↗

arXiv2015

Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb$_{2-x}$V$_x$Te$_3$ hybrid heterostructure, where V doping is used to drive the TI (Sb$_{2}$Te$_3$) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping provides insights into controllable engineering of magnetic order using a hybrid heterostructure.

cond-mat.mes-hall↗

arXiv2015

Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions, and widen the potential applications base of 2D layered materials.

cond-mat.mtrl-sci↗

arXiv2014

Experimental Verification of Van Vleck Nature of Long-Range Ferromagnetic Order in Vanadium-Doped Three-Dimensional Topological Insulator Sb$_{2}$Te$_{3}$

We demonstrate by high resolution low temperature electron energy loss spectroscopy (EELS) measurements that the long range ferromagnetic (FM) order in vanadium (V)-doped topological insulator Sb$_2$Te$_3$ has the nature of van Vleck-type ferromagnetism. The positions and the relative amplitudes of two core-level peaks (L$_3$ and L$_2$) of the V EELS spectrum show unambiguous change when the sample is cooled from room temperature to T=10K. Magnetotransport and comparison of the measured and simulated EELS spectra confirm that these changes originate from onset of FM order. Crystal field analysis indicates that in V-doped Sb$_2$Te$_3$, partially filled core states contribute to the FM order. Since van Vleck magnetism is a result of summing over all states, this magnetization of core level verifies the van Vleck-type ferromagnetism in a direct manner.

cond-mat.mes-hall↗

arXiv2014

Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/Topological Insulator/Ferromagnetic Trilayer

Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly challenging. We theoretically investigate the interlayer exchange coupling of two FMIs separated by a TI thin film, and show that the particular electronic states of the TI contributing to the proximity effect can be directly identified through the coupling behavior between two FMIs, together with a tunability of coupling constant. Such FMI/TI/FMI structure not only serves as a platform to clarify the magnetic structure of FMI/TI interface, but also provides insights into designing the magnetic storage devices with ultrafast response.

cond-mat.mes-hall↗

arXiv2014

Tunable THz Surface Plasmon Polariton based on Topological Insulator-Layered Superconductor Hybrid Structure

We theoretically investigate the surface plasmon polariton (SPP) at the interface between 3D strong topological insulator (TI) and layered superconductor-magnetic insulator structure. The tunability of SPP through electronic doping can be enhanced when the magnetic permeability of the layered structure becomes higher. When the interface is gapped by superconductivity or perpendicular magnetism, SPP dispersion is further distorted, accompanied by a shift of group velocity and penetration depth. Such a shift of SPP reaches maximum when the magnitude of Fermi level approaches the gap value, and may lead to observable effects. The tunable SPP at the interface between layered superconductor and magnetism materials in proximity to TI surface may provide new insight in the detection of Majorana Fermions.

cond-mat.mes-hall↗

arXiv2013

Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current, but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch.

cond-mat.mes-hall↗

arXiv2013

Topological Effect of Surface Plasmon Excitation in Gapped Isotropic Topological Insulator Nanowires

We present a theoretical investigation of the surface plasmon (SP) at the interface between topologically non-trivial cylindrical core and topological-trivial surrounding material, from the axion electrodynamics and modified constitutive relations. We find that the topological effect always leads to a red-shift of SP energy, while the energy red-shift decreases monotonically as core diameter decreases. A qualitative picture based on classical perturbation theory is given to explain these phenomena, from which we also infer that in order to enhance the shift, the difference between the inverse of dielectric constants of two materials shall be increased. We also find that the surrounding magnetic environment suppresses the topological effect. All these features can be well described by a simple ansatz surface wave, which is in good agreement with full electromagnetic eigenmodes. In addition, bulk plasmon energy at ω_{P}=17.5\pm0.2eV for semiconducting Bi2Se3 nanoparticle is observed from high-resolution Electron Energy Loss Spectrum Image measurements.

cond-mat.mes-hall↗

arXiv2013

Near-Field Optical Effect of a Core-Shell Nanostructure In Proximity to a Flat Surface

We provide an analytical solution to study the near field optical effect of a core-shell nanostructure in proximity to a flat surface, within quasi-static approximation. The distribution of electrostatic potential and field enhancement in this complex geometry are obtained by solving a set of linear equations. This analytical result can be applied to a wide range of systems associated with near field optics and surface plasmon polaritons. As an illustration of the power of this technique, we study the field attenuation effect of oxidized shell in a silver tip in near field scanning microscope. The thickness of oxidized layer can be monitored by measuring the light intensity. In addition, we propose a novel method to detect local temperature with spatial resolution down to nm scale, based on a Ag-Au core-shell structure.

cond-mat.mes-hall↗