arXiv subjects

Mingzhao Liu

Publications and source records attributed to Mingzhao Liu.

16 recordsLinked to original sources

arXiv2026

Surface Platinum Alloying for Passivation of Oxide Interfaces on Superconducting Niobium Films

Dielectric loss arising from two-level systems (TLS) at surfaces and interfaces remains a primary limitation to coherence in superconducting transmon qubits. Niobium (Nb), a widely used material in superconducting quantum circuits, readily forms native oxides under ambient conditions, leading to lossy dielectric interfaces that degrade device performance. Here, a robust and scalable fabrication strategy is demonstrated for chemically stabilizing Nb surfaces and mitigating further oxidation, including protection of both surface and sidewall regions. High-purity Nb films were fabricated with bulk-like superconducting transition temperatures ($T_c = 9.30\pm0.10$) K. We demonstrate that a thin Pt encapsulation layer, deposited after native oxide formation, can be transformed via thermal annealing into a Nb-Pt alloy at the surface. Spectroscopic and microscopic analyses confirm the formation of a chemically stable metallic alloy layer and its ability to suppress further oxide growth. Ab initio simulations elucidate the atomic-scale rearrangement and electronic structure evolution associated with Pt incorporation on native niobium oxide, providing insight into the stabilization mechanism of the alloyed surface. This approach offers a materials pathway for engineering chemically robust Nb interfaces, including sidewalls, toward higher-coherence superconducting qubit architectures."

cond-mat.supr-con↗

arXiv2026

Phase Formation and Thermal Stability of Superconducting Platinum Silicide Thin Films on Silicon

Platinum silicide (PtSi) thin films are promising for silicon-based superconducting quantum devices due to their compatibility with CMOS fabrication, air stability, and superconducting transition temperature near 1 K. We report a systematic study of PtSi phase formation, microstructure, and interface quality as a function of annealing temperature and duration, characterizing films using grazing-incidence X-ray diffraction, X-ray reflectivity, and electrical transport measurements. Phase-pure PtSi forms within minutes by rapid thermal processing at 600 °C and is stable under extended annealing, while 30 s anneals across 300-600 °C yield equivalent film quality with consistent microstructure and superconducting properties. X-ray reflectivity reveals that interfacial roughening is an intrinsic consequence of the Pt2Si-to-PtSi conversion step rather than a result of elevated temperature or prolonged annealing. These results establish a robust processing window for PtSi formation in silicon-based superconducting device fabrication flows.

cond-mat.supr-con↗

arXiv2026

Tantalum Damascene Coplanar Waveguide Resonators Fabricated Using 300 mm Scale Processes

Surface oxides contribute to losses in superconducting transmon devices resulting in degraded performance. We explore the use of the damascene process to replace the sidewall native oxide of a device with a metal/substrate interface. We simulate sidewall oxidation by burying an oxide layer during fabrication. We observe a modest improvement between the two types of devices, which is suggestive of a reduction in the surface participation ratio.

quant-ph↗

arXiv2026

Temperature-Dependent Dielectric Function of Tantalum Nitride Formed by Atomic Layer Deposition for Tunnel Barriers in Josephson Junctions

We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJ) for superconducting quantum circuits. The temperature-dependent ellipsometric angles were measured using ALD TaN films with nominal thicknesses of 13 nm and 25 nm at an incidence angle of 70 degrees, across photon energy ranges of 0.03 eV to 0.7 eV (80-300 K) and 0.5 eV to 6.5 eV (80-600 K). This data was used to develop a dispersion model for insulating ALD TaN films that incorporates a Tauc-Lorentz oscillator with a band gap of 1.5-1.8 eV to model the interband optical transitions. The extracted dielectric function of ALD TaN films shows an insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, demonstrating its insulating nature, which is required for the tunnel barrier of the JJ in quantum applications. The results of transmission electron microscopy, including selected area electron diffraction, and X-ray diffraction are also discussed. Sputter depth-profile X-ray photoelectron spectroscopy (XPS) shows an N/Ta ratio of ~1.2 throughout the film. The lower band gap, low roughness, and thermal stability of ALD TaN compared to AlOx suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, better control of thickness and composition, reduced topography, and resistance to aging.

cond-mat.supr-con↗

arXiv2026

Effects of Integrated Heatsinking on Superconductivity in Tantalum Nitride Nanowires at the 300 Millimeter Scale

We report the superconducting properties of tantalum nitride (TaN) nanowires and TaN/copper (TaN/Cu) bilayer nanowires fabricated on 300 mm silicon wafers using CMOS-compatible processes. We evaluate how an integrated Cu heatsink modifies the superconducting response of TaN nanowires by improving thermal dissipation without significantly compromising key superconducting parameters. Through analysis of hysteresis in current-voltage curves, we demonstrate that Cu integration improves heat dissipation, supporting expectations of faster reset times in superconducting nanowire single-photon detectors (SNSPDs), consistent with enhanced heat transfer away from the hot spot. Using the Skocpol-Beasley-Tinkham (SBT) hotspot model, we quantify the Cu-enabled improvement in heat transfer as an approximately 100x increase in the SBT slope parameter beta and effective interfacial heat-transfer efficiency compared to TaN nanowires. The near-unity ratio of critical to retrapping current in TaN/Cu bilayer nanowires provides another evidence of efficient heat removal enabled by the integrated Cu layer. Our results show a zero-temperature Ginzburg-Landau coherence length of 7 nm and a critical temperature of 4.1 K for 39 nm thick TaN nanowires. The nanowires show <5% variation in critical dimensions, room-temperature resistance, residual resistance ratio, critical temperature, and critical current across the 300 mm wafer for all measured linewidths, demonstrating excellent process uniformity and scalability. These results indicate the trade-offs between superconducting performance and heat-sinking efficiency in TaN/Cu bilayer nanowires. They also underscore the viability of wafer-scale fabrication for fast, large-area SNSPD arrays for applications in photonic quantum computing, cosmology, and neuromorphic computing devices.

cond-mat.supr-con↗

arXiv2024

Revealing the Origin and Nature of the Buried Metal-Substrate Interface Layer in Ta/Sapphire Superconducting Films

Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.

cond-mat.mtrl-sci↗

arXiv2024

Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation

The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems (TLSs) in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. We find that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, suggesting total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide TLS loss in superconducting qubits.

cond-mat.supr-con↗

arXiv2024

Performance Analysis of Superconductor-constriction-Superconductor Transmon Qubits

This work presents a computational analysis of a superconducting transmon qubit design, in which the superconductor-insulator-superconductor (SIS) Josephson junction is replaced by a co-planar, superconductor-constriction-superconductor (ScS) nanobridge junction. Within the scope of Ginzburg-Landau theory, we find that the nanobridge ScS transmon has an improved charge dispersion compared to the SIS transmon, with a tradeoff of smaller anharmonicity. These calculations provide a framework for estimating the superconductor material properties and junction dimensions compatible with gigahertz frequency ScS transmon operation.

cond-mat.supr-con↗

arXiv2023

Cascade: A Platform for Delay-Sensitive Edge Intelligence

Interactive intelligent computing applications are increasingly prevalent, creating a need for AI/ML platforms optimized to reduce per-event latency while maintaining high throughput and efficient resource management. Yet many intelligent applications run on AI/ML platforms that optimize for high throughput even at the cost of high tail-latency. Cascade is a new AI/ML hosting platform intended to untangle this puzzle. Innovations include a legacy-friendly storage layer that moves data with minimal copying and a "fast path" that collocates data and computation to maximize responsiveness. Our evaluation shows that Cascade reduces latency by orders of magnitude with no loss of throughput.

cs.OS↗

arXiv2023

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.

cond-mat.mtrl-sci↗

arXiv2023

Surpassing millisecond coherence times in on-chip superconducting quantum memories by optimizing materials, processes, and circuit design

The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode approach to characterizing energy losses in superconducting quantum circuits, with the goals of predicting device performance and improving coherence through materials, process, and circuit design optimization. Using this approach, we measure significant reductions in surface and bulk dielectric losses by employing a tantalum-based materials platform and annealed sapphire substrates. With this knowledge we predict and experimentally verify the relaxation times of aluminum- and tantalum-based transmon qubits. We additionally optimize device geometry to maximize coherence within a coaxial tunnel architecture, and realize on-chip quantum memories with single-photon Ramsey times of 2.0$-$2.7 ms, limited by their energy relaxation times of 1.0$-$1.4 ms. To our knowledge this is the highest coherence achieved in an on-chip quantum memory, and demonstrates an advancement towards a more modular and compact coaxial circuit architecture for bosonic qubits with reproducibly high coherence.

quant-ph↗

arXiv2023

Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.

physics.app-ph↗

arXiv2023

Chemical profiles of the oxides on tantalum in state of the art superconducting circuits

Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.

cond-mat.mtrl-sci↗

arXiv2023

Disentangling Losses in Tantalum Superconducting Circuits

Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss. Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss that limit state-of-the-art tantalum devices. By studying the dependence of loss on temperature, microwave photon number, and device geometry, we quantify materials-related losses and observe that the losses are dominated by several types of saturable two level systems (TLSs), with evidence that both surface and bulk related TLSs contribute to loss. Moreover, we show that surface TLSs can be altered with chemical processing. With four different surface conditions, we quantitatively extract the linear absorption associated with different surface TLS sources. Finally, we quantify the impact of the chemical processing at single photon powers, the relevant conditions for qubit device performance. In this regime we measure resonators with internal quality factors ranging from 5 to 15 x 10^6, comparable to the best qubits reported. In these devices the surface and bulk TLS contributions to loss are comparable, showing that systematic improvements in materials on both fronts will be necessary to improve qubit coherence further.

quant-ph↗

arXiv2014

Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks

A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ~20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ~1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of $26\pm7$ nm and a distribution of NV-NV separations of $16\pm5$ nm.

cond-mat.mtrl-sci↗

arXiv2006

Ultrafast resonant optical scattering from single gold nanorods: Large nonlinearities and plasmon saturation

We measure nonlinear optical scattering from individual Au nanorods excited by ultrafast laser pulses on resonance with their longitudinal plasmon mode. Isolating single rods removes inhomogeneous broadening and allows the measurement of a large nonlinearity, much greater than that of nanorod ensembles. Surprisingly, the ultrafast nonlinearity can be attributed entirely to heating of conduction electrons and does not exhibit any response associated with coherent plasmon oscillation. This indicates a previously unobserved damping of strongly driven plasmons.

cond-mat.mtrl-sci↗