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arXiv · 1412.6600

Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks

Igal Bayn·Edward H. Chen·Matthew E. Trusheim·Luozhou Li·Tim Schröder·Ophir Gaathon·Ming Lu·Aaron Stein·Mingzhao Liu·Kim Kisslinger·Hannah Clevenson·Dirk Englund
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Abstract

A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ~20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ~1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of $26\pm7$ nm and a distribution of NV-NV separations of $16\pm5$ nm.

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Igal Bayn, Edward H. Chen, Matthew E. Trusheim, Luozhou Li, Tim Schröder, Ophir Gaathon, Ming Lu, Aaron Stein, Mingzhao Liu, Kim Kisslinger, Hannah Clevenson, Dirk Englund. 2014-12-20. Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks. https://doi.org/10.1021/nl504441m

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