arXiv subjects

Molly P. Andersen

Publications and source records attributed to Molly P. Andersen.

7 recordsLinked to original sources

arXiv2026

Quantized Transport through a Supermoir\'e Chern Mosaic

Magic-angle helical trilayer graphene---three graphene layers sequentially twisted in the same direction by $\sim1.8^\circ$---relaxes into a mosaic of domains that, at zero field, carry opposite valley-resolved Chern numbers, with boundaries hosting a network of gapless conducting modes. Charge transport through this network depends sensitively on how the modes connect and scatter, making well-quantized transport unlikely. Contrary to this expectation, we observe a field-induced Chern gap with Chern number $C=-6$ emanating from charge neutrality; in this gap, the Hall resistance is quantized to within $2\%$ of the expected value, $-h/6e^2$, at 4.6 K. We explain this behavior using both Hofstadter and orbital Zeeman calculations, which show that a moderate magnetic field drives a valley-selective topological transition. Above the transition, the total Chern number of the occupied states in each spin-valley flavor becomes identical across neighboring domains, and the domain-wall modes can become gapped. Though the central valence-band Chern numbers still differ between the two domain types, the observed quantized transport attests to a global gap.

cond-mat.mes-hall↗

arXiv2025

Helios: A 98-qubit trapped-ion quantum computer

We report on Quantinuum Helios, a 98-qubit trapped-ion quantum processor based on the quantum charge-coupled device (QCCD) architecture. Helios features $^{137}$Ba$^{+}$ hyperfine qubits, all-to-all connectivity enabled by a rotatable ion storage ring connecting two quantum operation regions by a junction, speed improvements from parallelized operations, and a new software stack with real-time compilation of dynamic programs. Averaged over all operational zones in the system, we achieve average infidelities of $2.5(1)\times10^{-5}$ for single-qubit gates, $7.9(2)\times10^{-4}$ for two-qubit gates, and $4.8(6)\times10^{-4}$ for state preparation and measurement, none of which are fundamentally limited and likely able to be improved. These component infidelities are predictive of system-level performance in both random Clifford circuits and random circuit sampling, the latter demonstrating that Helios operates well beyond the reach of classical simulation and establishes a new frontier of fidelity and complexity for quantum computers.

quant-ph↗

arXiv2025

A unified realization of electrical quantities from the quantum International System of Units

In the revised International System of Units (SI), the ohm and the volt are realized from the von Klitzing constant and the Josephson constant, and a practical realization of the ampere is possible by applying Ohm's law directly to the quantum Hall and Josephson effects. As a result, it is possible to create an instrument capable of realizing all three primary electrical units, but the development of such a system remains challenging. Here we report a unified realization of the volt, ohm, and ampere by integrating a quantum anomalous Hall resistor (QAHR) and a programmable Josephson voltage standard (PJVS) in a single cryostat. Our system has a quantum voltage output that ranges from 0.24 mV to 6.5 mV with combined relative uncertainties down to 3 $μ$V/V. The QAHR provides a realization of the ohm at zero magnetic field with uncertainties near 1 $μΩ$/$Ω$. We use the QAHR to convert a longitudinal current to a quantized Hall voltage and then directly compare that against the PJVS to realize the ampere. We determine currents in the range of 9.33 nA to 252 nA, and our lowest uncertainty is 4.3 $μ$A/A at 83.9 nA. For other current values, a systematic error that ranges from -10 $μ$A/A to -30 $μ$A/A is present due to the imperfect isolation of the PJVS microwave bias.

cond-mat.mes-hall↗

arXiv2024

Fractional AC Josephson effect in a topological insulator proximitized by a self-formed superconductor

A lateral Josephson junction in which the surface of a 3D topological insulator serves as the weak link should support topologically protected excitations related to Majorana fermions. The resulting $4π$-periodic current-phase relationship could be detected under high-frequency excitation by the suppression of odd Shapiro steps. Here, we demonstrate such devices through the self-formation of a Pd-Te superconducting layer from a telluride topological insulator, and observe suppressed first and third Shapiro steps. Other devices, including those where the Pd-Te layer is bolstered by an additional Al layer, show no suppression of Shapiro steps, a difference supported by simulations. Though we rule out the known trivial causes of suppressed Shapiro steps in our devices, we nevertheless argue that corroborating measurements and disorder-aware theoretical descriptions of these systems are needed before confidently claiming the observation of Majorana states.

cond-mat.mes-hall↗

arXiv2023

Universal conductance fluctuations in a MnBi$_2$Te$_4$ thin film

Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors, including weak localization and the Aharonov-Bohm effect. Although magnetic order can also strongly affect transport, the combination of coherence and magnetic order has been largely unexplored. Here, we examine quantum coherence-driven universal conductance fluctuations in the antiferromagnetic, canted antiferromagnetic, and ferromagnetic phases of a thin film of the topological material MnBi$_2$Te$_4$. In each magnetic phase we extract a charge carrier phase coherence length of about 100 nm. The conductance magnetofingerprint is repeatable when sweeping applied magnetic field within one magnetic phase, but changes when the applied magnetic field crosses the antiferromagnetic/canted antiferromagnetic magnetic phase boundary. Surprisingly, in the antiferromagnetic and canted antiferromagnetic phase, but not in the ferromagnetic phase, the magnetofingerprint depends on the direction of the field sweep. To explain these observations, we suggest that conductance fluctuation measurements are sensitive to the motion and nucleation of magnetic domain walls in MnBi$_2$Te$_4$.

cond-mat.mes-hall↗

arXiv2023

Low-damage electron beam lithography for nanostructures on Bi$_2$Te$_3$-class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi$_2$Se$_3$ family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage -- common for nanopatterning in academic facilities -- damages both nonmagnetic TIs and their magnetically-doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

cond-mat.mes-hall↗

arXiv2022

Measured potential profile in a quantum anomalous Hall system suggests bulk-dominated current flow

Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well-described by solution of Laplace's equation, assuming spatially-uniform conductivity, suggesting non-equilibrium current flows through the two-dimensional bulk. Extrapolation suggests that at even lower temperatures current may still flow primarily through the bulk rather than, as had been assumed, through edge modes. An argument for bulk current flow previously applied to quantum Hall systems supports this picture.

cond-mat.mes-hall↗