arXiv subjects

Moritz Langer

Publications and source records attributed to Moritz Langer.

5 recordsLinked to original sources

arXiv2026

Deterministic positioning of circular Bragg gratings using atomic force lithography for high-performance quantum dot light sources

Semiconductor quantum dots (QDs) grown by molecular beam epitaxy are excellent quantum emitters, but their random spatial distribution hinders deterministic coupling to optical microcavities. We demonstrate a room-temperature atomic force microscopy (AFM)-assisted nano-oxidation lithography technique enabling QD positioning with a radial displacement of $51(28)$ nm. Free-standing asymmetric circular Bragg gratings incorporating AFM-positioned GaAs QDs exhibit a $245$-fold photoluminescence enhancement and fine-structure splitting (FSS) comparable to bulk QDs. Polarization-resolved spectroscopy and finite-difference time-domain simulations show robust emission for displacements up to $50$ nm (Stokes parameter $\lvert S \rvert < 0.05$ ). The devices display stable FSS and polarization imbalance below $5 \, \%$ , confirming precise, reproducible alignment and potential for high fidelity devices. This scalable approach enables deterministic integration of high-performance QDs with photonic cavities, advancing practical quantum light sources for quantum information technologies.

cond-mat.mtrl-sci↗

arXiv2026

Free-standing circular Bragg gratings enabling efficient GaAs quantum dot entangled photon pair sources

Deterministic and bright quantum light sources based on scalable semiconductor technologies are a crucial building block for future quantum communication networks. While circular Bragg gratings (CBGs) are highly effective for extracting light from solid-state quantum emitters, conventional architectures rely on complex multi-layer processing or flip-chip bonding, which introduce detrimental strain and limit scalability. Here, we present a fabrication-minimal approach to realize monolithic, free-standing CBG cavities with deterministically positioned single GaAs quantum dots (QDs). By utilizing aspect-ratio-dependent etching (ARDE) in a single-step top-down process, we achieve the necessary vertical structural asymmetry for directional emission without requiring bottom reflectors. Finite-difference time-domain (FDTD) simulations validate this geometry, predicting free-space extraction efficiencies up to $68 \, \%$ and coupling efficiencies of $40 \, \%$ into a lensed single-mode fiber ($\text{NA} = 0.6$). Experimentally, the deterministically coupled QD-CBG devices yield a photoluminescence intensity enhancement of up to $\times 700$ compared to unprocessed planar QDs, reaching integrated count rates of $45 \, MHz$. Furthermore, the suspended membrane architecture effectively relaxes residual strain, significantly reducing the average exciton fine-structure splitting from $7.3 \, \mu eV$ in planar QDs to $1.3 \, \mu eV$ in the CBGs. Interferometric measurements confirm that the fabrication process preserves the optical quality of the emitters, with average coherence times of $70 \, ps$. By bridging optimized FDTD design with precise nanofabrication and robust optical performance, these results establish free-standing GaAs CBGs as a highly scalable platform for bright and coherent entangled photon pair sources.

physics.optics↗

arXiv2026

Compact system development of efficient quantum-entangled photon sources towards deployable and industrial devices

Entangled photon pair sources are a key enabling technology for quantum communication and networking, yet their deployment beyond laboratory environments is hindered by system-level complexity, limited operational stability, and insufficient industry compatibility. Here, we demonstrate a rack-based, mobile quantum light source architecture based on a semiconductor quantum dot emitter that directly addresses these challenges through modular system integration and automated operation. The source generates polarization-entangled photon pairs with an entanglement negativity 2n of up to $0.98(1)$, confirming near-maximal entanglement quality. In continuous, hands-off operation over a six-hour time window, the system achieves an average single-photon emission rate of $697(8)$ kHz and a maximum rate of $740(7)$ kHz, while maintaining 2n-value of more than $95$ $\%$. These results are enabled by the integration of optical excitation, collection, cryogenic operation, and control electronics within a standardized rack footprint, together with automated monitoring. By demonstrating simultaneously high entanglement quality, sustained brightness, and long-term operational stability in an industry-aligned system architecture, this work advances semiconductor quantum dot sources toward deployable entangled photon sources for applied quantum photonics.

quant-ph↗

arXiv2025

Temperature-dependent refractive index of AlGaAs for quantum-photonic devices near the bandgap

We present an experimental method to determine the refractive index of $Al_{x}Ga_{1-x}As$ (x = 0.0 - 0.5) from 300 K to 4 K across the 500 - 1100 nm wavelength range. The values are extracted from spectroscopically observed microcavity resonances in thin $Al_{x}Ga_{1-x}As$ membranes embedded between fully and partially reflective gold mirrors. Refined Varshni and Paessler models are used to describe temperature-dependent bandgap shifts and material composition. By tracking resonance shifts and benchmarking against finite-difference time-domain simulations, we derive the dispersive optical response with high precision. This yields a quantitatively improved analytical expression for the refractive index of $Al_{x}Ga_{1-x}As$ matching the experimental results with a coefficient of determination as high as $R^2=0.993$, enabling accurate modeling near the band edge at cryogenic temperatures. The method is straightforward and broadly applicable to other semiconductor systems, offering a valuable tool for the design of micro photonic devices such as quantum light sources.

physics.optics↗

arXiv2025

Bright quantum dot light sources using monolithic microlenses on gold back-reflectors

We present the fabrication process of bright $GaAs$ quantum dot (QD) photon sources by non-deterministic embedding into broadband monolithic $Al_{0.15}Ga_{0.85}As$ microlens arrays on gold-coated substrates. Arrays of cylindrical photoresist templates, with diameters ranging from $2$ $\mu m$ to $5$ $\mu m$, are thermally reflowed and subsequently transferred into the $Al_{0.15}Ga_{0.85}As$ thin-film semiconductor heterostructure with embedded quantum dots through an optimized anisotropic and three-dimensional shape-preserving reactive ion etching process. This methodology facilitated the fabrication of large-scale ($2$ $mm$ $\times$ $4$ $mm$) and densely packed arrays of uniformly shaped microlenses ($\sim$ $40 \times 10^3$ $mm^{-1}$), with the brightest emissions from QDs embedded in microlenses exhibiting lateral diameters and heights of $2.7$ $\mu m$ and $1.35$ $\mu m$, respectively. Finite-difference time-domain simulations of both idealized and fabricated lens shapes provide a comprehensive three-dimensional analysis of the device performance and optimization potentials such as anti-reflection coatings. It is found that free-space extraction (fiber-coupled) efficiencies of up to $62$ $\%$ ($37$ $\%$) are achievable for hemispherical QD-microlenses on gold-coated substrates. A statistical model for the fabrication yield of QD-microlenses is developed and experimentally corroborated by photoluminescence spectroscopy of fabricated microlens arrays. This analysis exhibited a free-space intensity enhancement by factors of up to $\times 200$ in approximately $1$ out of $200$ microlenses, showing good agreement to the theoretical expectations. This scalable fabrication strategy underscores the potential of these compact, high-efficiency sources offering new prospects for applications of these devices in future large-scale quantum networks.

cond-mat.mes-hall↗