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Muqing Yu

Publications and source records attributed to Muqing Yu.

14 recordsLinked to original sources

Nonplanar qubit with tunable gauge symmetry

Circuit quantum electrodynamics embeds Josephson junction qubits within superconducting cavities, and has emerged as a leading approach to quantum computing and quantum simulation. Despite the many permutations of circuit geometry that have been explored, Josephson connectivities have so far been planar, making them effectively low-dimensional. Here we show that a non-planar qubit -- a $3\times3$ crossbar Josephson array -- gives rise to flux-tunable $\mathbb{Z}_3$ combinatorial gauge symmetry (CGS), potentially enabling spin-liquid behavior when networked into a lattice. The observed excitation spectrum shows excellent agreement with predictions from a neural network trained to generate variational quantum states, demonstrating that we have predictive power over our high-dimensional quantum system. Fine-structure splittings near the CGS point are compatible with weak tunneling or symmetry breaking due to experimental imperfections. We additionally use the superconducting cavity to externally induce symmetry breaking, observing a restoration of symmetry at the CGS point where ground states differ only by a $\mathbb{Z}_3$ phase. This work initiates a general program exploring lattice gauge theories using the toolbox of circuit quantum electrodynamics. More broadly, introducing non-planar Josephson connectivities opens a vast space for experimental and theoretical exploration of structures in almost any imaginable dimensionality and geometry.

quant-ph

Local probing of superconductivity at oxide interfaces with atomic force microscopy

Superconductivity in strontium titanate has remained enigmatic for more than 50 years. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerface enables systematic dimensional confinement, from a two-dimensional electron gas to quasi-one-dimensional nanostructures, providing access to this quantum state. Transport measurements in patterned devices reveal puzzling phenomena, including width-independent critical currents and anomalous pairing suggestive of one-dimensional behavior, but direct local probes of the patterned interface and its superconducting response have been lacking. Here we use ultralow-temperature non-contact atomic force microscopy, dissipation spectroscopy, and Kelvin probe force microscopy to locally probe signatures of superconductivity in patterned LAO/STO devices. Spatially resolved energy-dissipation measurements reveal superconducting signatures, with features confined in some devices to edge channels approximately 200 nm wide. Dissipation spectra exhibit a characteristic nonlinear bias dependence that provides a local diagnostic of superconductivity, consistent with the intermediate carrier-density regime near the superconducting dome, and persisting up to the critical field. These results establish atomic force microscopy as a local probe of superconductivity in patterned LAO/STO structures and provide a route to addressing longstanding questions about quantum confinement and transport anomalies in correlated oxide nanostructures.

cond-mat.supr-con

Enhanced Superconductivity at Quantum-Critical KTaO3 Interfaces

Superconductivity at oxide interfaces has intrigued researchers for decades, yet the underlying pairing mechanism remains elusive. Here we demonstrate that proximity to a ferroelectric quantum critical point dramatically enhances interfacial superconductivity in KTaO3. By precisely tuning KTaO3 to its quantum critical composition through 0.8% niobium doping, we achieve a near-doubling of the superconducting transition temperature, reaching 2.9 K. Remarkably, a dome-shaped carrier density dependence emerges exclusively at the quantum critical point, contrasting sharply with the linear scaling observed in undoped interfaces. Our findings establish ferroelectric quantum criticality as a powerful mechanism for enhancing superconductivity and provide compelling evidence for soft-phonon-mediated pairing in these systems.

cond-mat.supr-con

KTaO3-Based Supercurrent Diode

The supercurrent diode effect (SDE), characterized by nonreciprocal critical currents, represents a promising building block for future dissipationless electronics and quantum circuits. Realizing SDE requires breaking both time-reversal and inversion symmetry in the device. Here we use conductive atomic force microscopy (c-AFM) lithography to pattern reconfigurable superconducting weak links (WLs) at the LaAlO3/KTaO3 (LAO/KTO) interface. By deliberately engineering the WL geometry at the nanoscale, we realize SDE in these devices in the presence of modest out-of-plane magnetic fields. The SDE polarity can be reversed by simply changing the WL position, and the rectification efficiency reaches up to 13% under optimal magnetic field conditions. Time-dependent Ginzburg-Landau simulations reveal that the observed SDE originates from asymmetric vortex motion in the inversion-symmetry-breaking device geometry. This demonstration of SDE in the LAO/KTO system establishes a versatile platform for investigating and engineering vortex dynamics, forming the basis for engineered quantum circuit elements.

cond-mat.supr-con

Engineered Chirality of One-Dimensional Nanowires

The origin and function of chirality in DNA, proteins, and other building blocks of life represent a central question in biology. Observations of spin polarization and magnetization associated with electron transport through chiral molecules, known collectively as the chiral induced spin selectivity (CISS) effect, suggest that chirality improves electron transfer by inhibiting backscattering. Meanwhile, the role of coherence in the electron transport within chiral nanowires is believed to be important but is challenging to investigate experimentally. Using reconfigurable nanoscale control over conductivity at the LaAlO$_3$/SrTiO$_3$ interface, we create chiral electron potentials that explicitly lack mirror symmetry. Quantum transport measurements on these chiral regions that constitute effective nanowires for the electrons reveal oscillatory transmission resonances as a function of both magnetic field and chemical potential. We interpret these resonances as arising from an engineered axial spin-orbit interaction within the chiral region. The ability to create 1D effective electron waveguides with this specificity and complexity creates new opportunities to test, via analog quantum simulation, theories about the relationship between chirality and spin-polarized electron transport in one-dimensional geometries.

cond-mat.mes-hall

Electric and Magnetic Field-dependent Tunneling between Coupled Nanowires

Coupled quasi-one-dimensional (quasi-1D) electron systems host rich emergent physics that cannot be accounted for by understanding isolated 1D electron systems alone. Open questions remain about how transport in these arrays can be manipulated by the application of external electric and magnetic fields. In this theoretical study, we consider a pair of coupled nanowires with non-interacting electrons. We find that a metal-insulator transition is induced by an out-of-plane magnetic field and a transverse potential bias on an array of such coupled wires. We demonstrate the existence of distinct conductance features and highlight the crucial role played by the field dependence of the interwire potential barrier on transport properties. These predictions agree well with transport experiments performed on coupled nanowires sketched on an LaAlO3/SrTiO3 interface. Since our model makes minimal assumptions, we expect our predictions to hold for a wide class of coupled 1D systems.

cond-mat.mes-hall

Magnetically Tuned Metal-Insulator Transition in LaAlO$_3$/SrTiO$_3$ Nanowire Arrays

A wide family of two dimensional (2D) systems, including stripe-phase superconductors, sliding Luttinger liquids, and anisotropic 2D materials, can be modeled by an array of coupled one-dimensional (1D) electron channels or nanowire arrays. Here we report experiments in arrays of conducting nanowires with gate and field tunable interwire coupling, that are programmed at the LaAlO$_3$/SrTiO$_3$ interface. We find a magnetically-tuned metal-to-insulator transition in which the transverse resistance of the nanowire array increases by up to four orders of magnitude. To explain this behavior, we develop a minimal model of a coupled two-wire system which agrees well with observed phenomena. These nanowire arrays can serve as a model systems to understand the origin of exotic behavior in correlated materials via analog quantum simulation.

cond-mat.mes-hall

Nanoscale ferroelectric programming of van der Waals heterostructures

The ability to create superlattices in van der Waals (vdW) heterostructures via moir\'e interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide range of periodic structures. Here, we describe a top-down approach to engineering nanoscale potentials in vdW layers using a buried programmable ferroelectric layer. Ultra-low-voltage electron beam lithography (ULV-EBL) is used to program ferroelectric domains in a ferroelectric Al_{1-x}B_{x}N thin film through a graphene/hexagonal boron nitride (hBN) heterostructure that is transferred on top. We demonstrate ferroelectric field effects by creating a lateral p-n junction, and demonstrate spatial resolution down to 35 nm, limited by the resolution of our scanned probe characterization methods. This innovative, resist-free patterning method is predicted to achieve 10 nm resolution and enable arbitrary programming of vdW layers, opening a pathway to create new phases that are inaccessible by moir\'e techniques. The ability to "paint" different phases of matter on a single vdW "canvas" provides a wealth of new electronic and photonic functionalities.

cond-mat.mtrl-sci

Long-Range Nanoelectromechanical Coupling at the LaAlO$_3$/SrTiO$_3$ Interface

The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron waveguides at the LaAlO$_3$/SrTiO$_3$ interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non-Coulombic gating at the interface is attributed to the existence of a long-range nanoelectromechanical coupling between the gate and electron waveguide, mediated by the ferroelastic domains in SrTiO$_3$. The long-range interactions at the LaAlO$_3$/SrTiO$_3$ interface add unexpected richness and complexity to this correlated electron system.

cond-mat.str-el

Sketched Nanoscale KTaO3-Based Superconducting Quantum Interference Device

The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithography which can reversibly control the conductivity at the LAO/KTO(110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current, Ic(B), with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit-coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information.

cond-mat.supr-con

Electronic-grade epitaxial (111) KTaO3 heterostructures

KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.

cond-mat.mtrl-sci

Surface acoustic wave generation and detection in quantum paraelectric regime of SrTiO$_3$-based heterostructure

Strontium titanate (STO), apart from being a ubiquitous substrate for complex-oxide heterostructures, possesses a multitude of strongly-coupled electronic and mechanical properties. Surface acoustic wave (SAW) generation and detection offers insight into electromechanical couplings that are sensitive to quantum paraelectricity and other structural phase transitions. Propagating SAWs can interact with STO-based electronic nanostructures, in particular LaAlO$_3$/SrTiO$_3$ (LAO/STO). Here we report generation and detection of SAW within LAO/STO heterointerfaces at cryogenic temperatures ($T\ge$~2 K) using superconducting interdigitated transducers (IDTs). The temperature dependence shows an increase in the SAWs quality factor that saturates at $T\approx 8 $ K. The effect of backgate tuning on the SAW resonance frequency shows the possible acoustic coupling with the ferroelastic domain wall evolution. This method of generating SAWs provides a pathway towards dynamic tuning of ferroelastic domain structures, which are expected to influence electronic properties of complex-oxide nanostructures. Devices which incorporate SAWs may in turn help to elucidate the role of ferroelastic domain structures in mediating electronic behavior.

cond-mat.str-el

Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces

Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.

cond-mat.mes-hall

Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography

We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.

cond-mat.mes-hall